Pith. sign in

REVIEW

Attosecond Control of Electron Beams at Dielectric and Absorbing Membranes

Not yet reviewed by Pith; the record is open.

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 1801.07876 v1 pith:PXDCPKXI submitted 2018-01-24 physics.optics physics.atom-phphysics.chem-ph

Attosecond Control of Electron Beams at Dielectric and Absorbing Membranes

classification physics.optics physics.atom-phphysics.chem-ph
keywords electronattoseconddielectricmembranespulsesabsorbingcontrolelectric
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
0 comments
read the original abstract

Ultrashort electron pulses are crucial for time-resolved electron diffraction and microscopy of fundamental light-matter interaction. In this work, we study experimentally and theoretically the generation and characterization of attosecond electron pulses by optical-field-driven compression and streaking at dielectric or absorbing interaction elements. The achievable acceleration and deflection gradient depends on the laser-electron angle, the laser's electric and magnetic field directions and the foil orientation. Electric and magnetic fields have similar contributions to the final effect and both need to be considered. Experiments and theory agree well and reveal the optimum conditions for highly efficient, velocity-matched electron-field interactions in longitudinal or transverse direction. We find that metallic membranes are optimum for light-electron control at mid-infrared or terahertz wavelengths, but dielectric membranes are excel in the visible/near-infrared regimes and are therefore ideal for the formation of attosecond electron pulses.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.