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Impact of strain on the excitonic linewidth in transition metal dichalcogenides

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Zahra Khatibi, Maja Feierabend, Malte Selig, Samuel Brem, Christopher Linderälv, Paul Erhart, Ermin Malic

Mesoscale and Nanoscale Physics · Submitted 19 Jun 2018

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim In particular, we explain recent experiments on the change of excitonic linewidths in strained TMDs and predict their behavior for tensile and compressive strain at low temperatures.

how it is stated · asserted 0.98 read the record →

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arXiv ID1806.07315 (version 1)
Pith IDOHIWVCM5, Pith's permanent record of this paper and its review
CitationChristopher Linder\"alv, Ermin Malic, Maja Feierabend, Malte Selig, Paul Erhart, Samuel Brem, Zahra Khatibi. "Impact of strain on the excitonic linewidth in transition metal dichalcogenides." arXiv:1806.07315 (2018). https://pith.science/paper/OHIWVCM5
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13.0 via TypeSafe API, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,246 input tokens.

What the abstract itself states, as probabilities: claims first 0.05 · states limitation 0.13 · human participants 0.02 · controlled comparison 0.09 · randomized assignment 0.01 · states quantitative result 0.05 · compares with prior results 0.55 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the role of excitonic effects under strain has not been fully understood yet. Utilizing the strain-induced modification of electron and phonon dispersion obtained by first principle calculations, we present in this work microscopic insights into the strain-dependent optical response of various TMD materials. In particular, we explain recent experiments on the change of excitonic linewidths in strained TMDs and predict their behavior for tensile and compressive strain at low temperatures.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. background 1.00 0.04 0.02 asserted 1.00
s1 In particular, strain can be exploited as a tool to control the optical response of TMDs. background 1.00 0.05 0.04 asserted 0.63
s2 However, the role of excitonic effects under strain has not been fully understood yet. gap 1.00 0.05 0.03 asserted 0.95
s3 Utilizing the strain-induced modification of electron and phonon dispersion obtained by first principle calculations, we present in this work microscopic insights into the strain-dependent optical response of various TMD materials. contribution 0.80 0.95 0.11 asserted 1.00
s4 In particular, we explain recent experiments on the change of excitonic linewidths in strained TMDs and predict their behavior for tensile and compressive strain at low temperatures. contribution 0.76 0.86 0.62 asserted 0.98

What kind of paper the classifier reports this is: simulation study 0.95 · evidence from simulation or computation 1.00.

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Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the role of excitonic effects under strain has not been fully understood yet. Utilizing the strain-induced modification of electron and phonon dispersion obtained by first principle calculations, we present in this work microscopic insights into the strain-dependent optical response of various TMD materials. In particular, we explain recent experiments on the change of excitonic linewidths in strained TMDs and predict their behavior for tensile and compressive strain at low temperatures.

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