Pith. sign in

REVIEW 1 cited by

Mechanism of N\'eel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging

Not yet reviewed by Pith; the record is open.

Re-run · record.json Download PDF Read on arXiv ↗

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 1810.11326 v2 pith:4GYWVKF7 submitted 2018-10-26 cond-mat.mtrl-sci

Lorenzo Baldrati , Olena Gomonay , Andrew Ross , Mariia Filianina , Romain Lebrun , Rafael Ramos , Cyril Leveille , Felix Fuhrmann
show 7 more authors
Thomas Forrest Francesco Maccherozzi Sergio Valencia Florian Kronast Eiji Saitoh Jairo Sinova Mathias Kläui
This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords switchingmagneticantiferromagneticdirectimagingspinactionanisotropy
verification ladder T0 review T1 audit T2 compute T3 formal

Signed reviews

No signed human review yet.

0 comments
read the original abstract

We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

Discussion (0). Continue with ORCID to comment.

Forward citations

Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Gating effects in antiferromagnetic CuMnAs

    cond-mat.mtrl-sci 2019-08 accept novelty 6.0 of 10

    Ionic liquid gating reversibly modulates the resistivity of antiferromagnetic CuMnAs films, and the measured carrier mobility agrees with Hall data.

Pith tools