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Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi$_2$Te$_4$
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abstract
In a magnetic topological insulator, nontrivial band topology conspires with magnetic order to produce exotic states of matter that are best exemplified by quantum anomalous Hall (QAH) insulators and axion insulators. Up till now, such magnetic topological insulators are obtained by doping topological insulators with magnetic atoms. The random magnetic dopants, however, inevitably introduce disorders that hinder further exploration of quantum effects in the material. Here, we resolve this dilemma by probing quantum transport in MnBi$_2$Te$_4$ thin flake - a topological insulator with intrinsic magnetic order. In this layered van der Waals crystal, the ferromagnetic layers couple anti-parallel to each other, so MnBi$_2$Te$_4$ is an antiferromagnet. A magnetic field, however, aligns all the layers and induces an interlayer ferromagnetic order; we show that a quantized anomalous Hall response emerges in atomically thin MnBi$_2$Te$_4$ under a moderate magnetic field. MnBi$_2$Te$_4$ therefore becomes the first intrinsic magnetic topological insulator exhibiting quantized anomalous Hall effect. The result establishes MnBi$_2$Te$_4$ as an ideal arena for further exploring various topological phenomena.
Forward citations
Cited by 4 Pith papers
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Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets
An out-of-plane electric field breaks PT symmetry in even-layer MnBi2Te4 and drives a topological phase transition to a Chern insulator with Chern number 3, enabling an electric-field-controlled anomalous Hall switch.
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Competing magnetic interactions in the antiferromagnetic topological insulator MnBi$_{2}$Te$_{4}$
Spin-wave measurements show that MnBi2Te4 has frustrated intralayer magnetic exchange close to the classical limit for ferromagnetism.
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Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure
DFT calculations predict that CrI3 proximity induces a 40 meV exchange bias in MnBi2Te4 films, enabling zero-field QAH states with Chern numbers 1 and 3.
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Flat Chern Band From Twisted Bilayer MnBi$_2$Te$_4$
A twisted bilayer of MnBi2Te4 is predicted to host an isolated flat Chern band at about one degree twist, offering a time-reversal-broken moire platform for correlated topological states.
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