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Spin-layer Locked Gapless States in Gated Bilayer Graphene

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W. Jaskólski, A. Ayuela

Mesoscale and Nanoscale Physics · Submitted 18 Jun 2019

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim We herein demonstrate that these topologically protected currents are spin -polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects.

how it is stated · asserted 1.00 read the record →

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arXiv ID1906.07513 (version 1)
Pith IDXJBOMZS3, Pith's permanent record of this paper and its review
CitationA. Ayuela, W. Jask\'olski. "Spin-layer Locked Gapless States in Gated Bilayer Graphene." arXiv:1906.07513 (2019). https://pith.science/paper/XJBOMZS3
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13.0 via TypeSafe API, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,862 input tokens.

What the abstract itself states, as probabilities: claims first 0.05 · states limitation 0.20 · human participants 0.01 · controlled comparison 0.10 · randomized assignment 0.01 · states quantitative result 0.05 · compares with prior results 0.17 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these topologically protected currents are spin -polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects. The magnetic defects, which we model as {\pi}-vacancies, perturb the topological states but also lift their spin degeneracy. One gapless state survives the perturbation of these defects, and its spin polarization is largely localized in one layer. The spin-polarized current in the topological state flows in a single layer, and this finding suggests the possibility of effectively exploiting these states in spintronic applications.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. background 0.97 0.24 0.08 asserted 1.00
s1 These states allow for one-dimensional currents along the domain walls. background 0.89 0.14 0.04 asserted 0.99
s2 We herein demonstrate that these topologically protected currents are spin -polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects. contribution 0.54 0.93 0.76 asserted 1.00
s3 The magnetic defects, which we model as {\pi}-vacancies, perturb the topological states but also lift their spin degeneracy. result 0.61 0.73 0.07 asserted 1.00
s4 One gapless state survives the perturbation of these defects, and its spin polarization is largely localized in one layer. result 1.00 0.86 0.28 asserted 1.00
s5 The spin-polarized current in the topological state flows in a single layer, and this finding suggests the possibility of effectively exploiting these states in spintronic applications. interpretation 0.99 0.76 0.61 hedged possibility 0.94

What kind of paper the classifier reports this is: theoretical result 0.76 · evidence from simulation or computation 0.91.

What was examined, and what was not

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  • relations to other papers
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  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these topologically protected currents are spin -polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects. The magnetic defects, which we model as {\pi}-vacancies, perturb the topological states but also lift their spin degeneracy. One gapless state survives the perturbation of these defects, and its spin polarization is largely localized in one layer. The spin-polarized current in the topological state flows in a single layer, and this finding suggests the possibility of effectively exploiting these states in spintronic applications.

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