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Opto-electronic properties of alpha-In2Se3: single-layer to bulk

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arxiv 1911.01784 v2 pith:NHVMHJM4 submitted 2019-11-05 cond-mat.mtrl-sci physics.optics

Opto-electronic properties of alpha-In2Se3: single-layer to bulk

Yujin Cho , Sean M. Anderson , Bernardo S. Mendoza , Shun Okano , Ramon Carriles , N. Arzate , Anatoli I. Shkrebtii , Di Wu
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Keji Lai D. R. T. Zahn M. C. Downer
This is my paper
classification cond-mat.mtrl-sci physics.optics
keywords alpha-in2se3bulkcalculationsbandstructureschemically-growncomparedensityenergy
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In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations.

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