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Proximity induced spin-orbit splitting in graphene nanoribbons on transition metal dichalcogenides

Mesoscale and Nanoscale Physics · Submitted 19 Nov 2019

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim When the TMD is metallic, such as NbSe2, we find that the spin-splitting induced in the GNRs can be very large and strongly dependent on the stacking configuration.

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arXiv ID1911.08501 (version 2)
Pith IDB7VL73CI, Pith's permanent record of this paper and its review
CitationEnrico Rossi, Eric J. Walter, Yohanes S. Gani. "Proximity induced spin-orbit splitting in graphene nanoribbons on transition metal dichalcogenides." arXiv:1911.08501 (2019). https://pith.science/paper/B7VL73CI
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Compiled by classifier-1.13.0 via TypeSafe API, question bank abstract-p1-20260923, 2026-09-23: 1 request, 5,703 input tokens.

What the abstract itself states, as probabilities: claims first 0.03 · states limitation 0.40 · human participants 0.01 · controlled comparison 0.36 · randomized assignment 0.01 · states quantitative result 0.99 · compares with prior results 0.13 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v2. Results and the main claim are underlined; .

We study the electronic structure of heterostructures formed by a graphene nanoribbon (GNR) and a transition metal dichalcogenides (TMD) monolayer using first-principles. We consider both semiconducting TMDs and metallic TMDs, and different stacking configurations. We find that when the TMD is semiconducting the effects on the band structure of the GNRs are small. In particular the spin-splitting induced by proximity on the GNRs bands is only of the order of few meV irrespective of the stacking configuration. When the TMD is metallic, such as NbSe2, we find that the spin-splitting induced in the GNRs can be very large and strongly dependent on the stacking configuration. For optimal stacking configurations the proximity-induced spin-splitting is of the order of 20 meV for armchair graphene nanoribbons, and as high as 40 meV for zigzag graphene nanoribbons. This results are encouraging for the prospects of using GNR-TMD heterostructures to realize quasi one-dimensional topological superconducting states supporting Majorana modes.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 We study the electronic structure of heterostructures formed by a graphene nanoribbon (GNR) and a transition metal dichalcogenides (TMD) monolayer using first-principles. contribution 0.97 0.93 0.03 asserted 0.83
s1 We consider both semiconducting TMDs and metallic TMDs, and different stacking configurations. contribution 0.52 0.77 0.02 asserted 0.54
s2 We find that when the TMD is semiconducting the effects on the band structure of the GNRs are small. result 1.00 0.94 0.10 asserted 1.00
s3 In particular the spin-splitting induced by proximity on the GNRs bands is only of the order of few meV irrespective of the stacking configuration. result 1.00 0.94 0.12 asserted 1.00
s4 When the TMD is metallic, such as NbSe2, we find that the spin-splitting induced in the GNRs can be very large and strongly dependent on the stacking configuration. result 1.00 0.96 0.22 asserted 1.00
s5 For optimal stacking configurations the proximity-induced spin-splitting is of the order of 20 meV for armchair graphene nanoribbons, and as high as 40 meV for zigzag graphene nanoribbons. result 1.00 0.95 0.34 asserted 1.00
s6 This results are encouraging for the prospects of using GNR-TMD heterostructures to realize quasi one-dimensional topological superconducting states supporting Majorana modes. interpretation 1.00 0.26 0.41 hedged possibility 0.83

What kind of paper the classifier reports this is: simulation study 1.00 · evidence from simulation or computation 1.00.

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Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

We study the electronic structure of heterostructures formed by a graphene nanoribbon (GNR) and a transition metal dichalcogenides (TMD) monolayer using first-principles. We consider both semiconducting TMDs and metallic TMDs, and different stacking configurations. We find that when the TMD is semiconducting the effects on the band structure of the GNRs are small. In particular the spin-splitting induced by proximity on the GNRs bands is only of the order of few meV irrespective of the stacking configuration. When the TMD is metallic, such as NbSe2, we find that the spin-splitting induced in the GNRs can be very large and strongly dependent on the stacking configuration. For optimal stacking configurations the proximity-induced spin-splitting is of the order of 20 meV for armchair graphene nanoribbons, and as high as 40 meV for zigzag graphene nanoribbons. This results are encouraging for the prospects of using GNR-TMD heterostructures to realize quasi one-dimensional topological superconducting states supporting Majorana modes.

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