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Reflectance of Silicon Photomultipliers in Linear Alkylbenzene

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arxiv 2002.04218 v1 pith:DGXJKVJO submitted 2020-02-11 physics.ins-det hep-ex

Reflectance of Silicon Photomultipliers in Linear Alkylbenzene

classification physics.ins-det hep-ex
keywords sipmsreflectancealkylbenzenedevicelinearmeasuredphotomultiplierssilicon
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Reflectance of silicon photomultipliers (SiPMs) is an important aspect to understand the large scale SiPM-based detector systems and evaluate the performance of SiPMs. We report the reflactance of two SiPMs, NUV-HD-lowCT and S14160-60-50HS manufactured by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) respectively, in linear alkylbenzene (LAB) and in air at visible wavelengths. Our results show that the reflectance of the FBK SiPM in air varies in the range of 14% to 23% , depending on wavelengths and angle of incidence, which is 2 time larger than that of the HPK device. This indicates that the two manufacturers are using different designs of anti-reflective coating on SiPMs' surfaces. The reflectance is reduced by about 10% when SiPMs are immersed in LAB, compared with that measured in air. The profiles of reflected light beams are also measured by a charge-coupled device (CCD) camera for the two SiPMs.

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Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Calibration Methods of Silicon Photomultiplier for JUNO-TAO Central Detector

    physics.ins-det 2025-12 accept novelty 6.0

    Calibration methods for SiPM parameters in JUNO-TAO achieve quantified biases below 3% and limit impacts on vertex precision and energy resolution to under 3%.