Anomalous 140 K electronic transition in Bi₂Se₃: Possible charge order in a defect-engineered system

We report an anomalous electronic transition at 140~K in high-quality Bi$_2$Se$_3$, where charge order emerges in a defect-tuned system. Native defects (Se vacancies and Bi intercalation)-intrinsic to our reproducible growth method-modulate electronic states without compromising sample integrity, mirroring doping-induced phases in correlated topological materials. The hexagonally deformed Fermi surfaces and strong nesting in Bi$_2$Se$_3$ and related compounds (such as, Bi$_2$Te$_3$ ) have long suggested the possibility of density wave ordering, with recent work on superconducting Cu- and Nb-doped Bi$_2$Se$_3$ further highlighting charge order's role in unconventional superconductivity. Here, we identify a periodic lattice distortion near room temperature via electron diffraction, consistent with diffuse charge order. This is accompanied by a 140~K electronic transition, manifested in resistivity measurements as a pronounced anomaly, exhibiting a semiconductor-like upturn, signaling the opening of an energy gap. Nuclear magnetic resonance (NMR) studies of the $^{209}$Bi spin-lattice relaxation rate (1/$T_1$ ) reveal a concurrent transition, confirming the emergence of an 8~meV energy gap. Our results are consistent with defect-stabilized charge order in Bi$_2$Se$_3$ , linking native defects to its electronic properties and offering broader insights into the interplay between charge order and superconductivity in topological materials.