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Large Magnetoresistance in Topological Insulator Candidate TaSe3

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arxiv 2003.00452 v2 pith:423DR4Q4 submitted 2020-03-01 cond-mat.mtrl-sci cond-mat.mes-hall

Yong Zhang , Tongshuai Zhu , Haijun Bu , Zixiu Cai , Chuanying Xi , Bo Chen , Boyuan Wei , Dongjing Lin
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Hangkai Xie Muhammad Naveed Xiaoxiang Xi Fucong Fei Haijun Zhang Fengqi Song
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classification cond-mat.mtrl-scicond-mat.mes-hall
keywords measurementstase3candidateinsulatorlargemagnetoresistancetopologicalaccount
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Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio n_h/n_e closing 0.9 at T< 20 K , which suggests that the carrier compensations account for the XMR in TaSe3.

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