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A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor

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arxiv 2012.10019 v2 pith:57WTZLPU submitted 2020-12-18 cond-mat.mtrl-sci cond-mat.mes-hallcond-mat.str-elphysics.app-ph

Xiwen Liu , Jeffrey Zheng , Dixiong Wang , Pariasadat Musavigharavi , Eric A. Stach , Roy Olsson III , Deep Jariwala This is my paper · ORCID
classification cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.app-ph
keywords ferroelectricaluminumcmoscompatiblejunctionmemristorscandiumtunnel
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We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.

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