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Quantum Oscillations and the Quasiparticle Properties of Thin Film Sr$_2$RuO$_4$

Superconductivity · Submitted 1 Mar 2021

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim We show that the electronic structure is nearly identical to that of single-crystal Sr$_2$RuO$_4$, and that the quasiparticle lifetime is consistent with the Tc of comparably clean, single-crystal Sr$_2$RuO$_4$.

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arXiv ID2103.00723 (version 2)
Pith ID2FTWVCL2, Pith's permanent record of this paper and its review
CitationBerit Goodge, B. J. Ramshaw, Darrell G. Schlom, Hari P. Nair, Jacob P. Ruf, Kyle M. Shen, Lena F. Kourkoutis, Ludi Miao, Nathaniel J. Schreiber, Yawen Fang. "Quantum Oscillations and the Quasiparticle Properties of Thin Film Sr$_2$RuO$_4$." arXiv:2103.00723 (2021). https://pith.science/paper/2FTWVCL2
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The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13.0 via TypeSafe API, question bank abstract-p1-20260923, 2026-09-23: 1 request, 5,933 input tokens.

What the abstract itself states, as probabilities: claims first 0.03 · states limitation 0.37 · human participants 0.02 · controlled comparison 0.74 · randomized assignment 0.01 · states quantitative result 0.99 · compares with prior results 0.97 · mentions code or data availability 0.01.

The abstract, sentence by sentence

arXiv listing abstract v2. Results and the main claim are underlined; .

We measure the Shubnikov-de Haas effect in thin-film Sr$_2$RuO$_4$ grown on an (LaAlO$_3$)$_{0.29}$-(SrAl$_{1/2}$Ta$_{1/2}$O$_3$)$_{0.71}$ (LSAT) substrate. We detect all three known Fermi surfaces and extract the Fermi surface volumes, cyclotron effective masses, and quantum lifetimes. We show that the electronic structure is nearly identical to that of single-crystal Sr$_2$RuO$_4$, and that the quasiparticle lifetime is consistent with the Tc of comparably clean, single-crystal Sr$_2$RuO$_4$. Unlike single-crystal Sr$_2$RuO$_4$, where the quantum and transport lifetimes are roughly equal, we find that the transport lifetime is $1.3\pm0.1$ times longer than the quantum lifetime. This suggests that extended (rather than point) defects may be the dominant source of quasiparticle scattering in these films. To test this idea, we perform cross-sectional STEM and find that out-of-phase boundaries extending the entire thickness of the film occur with a density that is consistent with the quantum mean free path. The long quasiparticle lifetimes make these films ideal for studying the unconventional superconducting state in Sr$_2$RuO$_4$ through the fabrication of devices -- such as planar tunnel junctions and SQUIDs.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 We measure the Shubnikov-de Haas effect in thin-film Sr$_2$RuO$_4$ grown on an (LaAlO$_3$)$_{0.29}$-(SrAl$_{1/2}$Ta$_{1/2}$O$_3$)$_{0.71}$ (LSAT) substrate. method 0.69 0.97 0.03 asserted 1.00
s1 We detect all three known Fermi surfaces and extract the Fermi surface volumes, cyclotron effective masses, and quantum lifetimes. result 0.86 0.98 0.08 asserted 1.00
s2 We show that the electronic structure is nearly identical to that of single-crystal Sr$_2$RuO$_4$, and that the quasiparticle lifetime is consistent with the Tc of comparably clean, single-crystal Sr$_2$RuO$_4$. result 1.00 0.94 0.26 asserted 0.95
s3 Unlike single-crystal Sr$_2$RuO$_4$, where the quantum and transport lifetimes are roughly equal, we find that the transport lifetime is $1.3\pm0.1$ times longer than the quantum lifetime. result 1.00 0.95 0.26 asserted 1.00
s4 This suggests that extended (rather than point) defects may be the dominant source of quasiparticle scattering in these films. interpretation 1.00 0.55 0.31 hedged possibility 1.00
s5 To test this idea, we perform cross-sectional STEM and find that out-of-phase boundaries extending the entire thickness of the film occur with a density that is consistent with the quantum mean free path. result 0.57 0.98 0.13 asserted 0.88
s6 The long quasiparticle lifetimes make these films ideal for studying the unconventional superconducting state in Sr$_2$RuO$_4$ through the fabrication of devices -- such as planar tunnel junctions and SQUIDs. future work 0.62 0.29 0.23 asserted 0.90

What kind of paper the classifier reports this is: empirical study 1.00 · evidence from observation or experiment 1.00.

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Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

We measure the Shubnikov-de Haas effect in thin-film Sr$_2$RuO$_4$ grown on an (LaAlO$_3$)$_{0.29}$-(SrAl$_{1/2}$Ta$_{1/2}$O$_3$)$_{0.71}$ (LSAT) substrate. We detect all three known Fermi surfaces and extract the Fermi surface volumes, cyclotron effective masses, and quantum lifetimes. We show that the electronic structure is nearly identical to that of single-crystal Sr$_2$RuO$_4$, and that the quasiparticle lifetime is consistent with the Tc of comparably clean, single-crystal Sr$_2$RuO$_4$. Unlike single-crystal Sr$_2$RuO$_4$, where the quantum and transport lifetimes are roughly equal, we find that the transport lifetime is $1.3\pm0.1$ times longer than the quantum lifetime. This suggests that extended (rather than point) defects may be the dominant source of quasiparticle scattering in these films. To test this idea, we perform cross-sectional STEM and find that out-of-phase boundaries extending the entire thickness of the film occur with a density that is consistent with the quantum mean free path. The long quasiparticle lifetimes make these films ideal for studying the unconventional superconducting state in Sr$_2$RuO$_4$ through the fabrication of devices -- such as planar tunnel junctions and SQUIDs.

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