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Induced superconducting pairing in integer quantum Hall edge states

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arxiv 2108.08899 v3 pith:GBDPBLVN submitted 2021-08-19 cond-mat.mes-hall cond-mat.supr-con

Mehdi Hatefipour , Joseph J. Cuozzo , Jesse Kanter , William Strickland , Christopher R. Allemang , Tzu-Ming Lu , Enrico Rossi , Javad Shabani This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.supr-con
keywords quantumandreevhallinasstatesallowconversionedge
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Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. We analyze the experimental data using the Landauer-B\"{u}ttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.

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  1. Quantum Hall Andreev Conversion in Graphene Nanostructures

    cond-mat.mes-hall 2025-07 conditional novelty 6.0 of 10

    Chiral Andreev conversion at partially transparent graphene-superconductor interfaces is robust, not valley-degenerate, and can show interference oscillations from intervalley scattering at corners.

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