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Regulate the direct-indirect electronic band gap transition by electron-phonon interaction in BaSnO3

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arxiv 2111.11180 v3 pith:Z4SC3FP3 submitted 2021-11-14 cond-mat.mtrl-sci quant-ph

classification cond-mat.mtrl-sciquant-ph
keywords ba1-xsrxsno3bandbasno3electron-phononelectronicinteractionlatticeraman
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The neutron powder diffraction, specific heat, thermal conductivity, and Raman scattering measurements were presented to study the interplays of lattice, phonons and electrons of the Sr-doping Ba1-xSrxSnO3 (x was less than or equal to 0.1). Although Ba1-xSrxSnO3 kept the cubic lattice, the Raman spectra suggested a dynamic distortion at low temperature. The density functional theory was applied to analyze the electronic structures and phonon dispersions of Ba1-xSrxSnO3(x = 0, 0.0125), and the behaviors of electron bands around Fermi levels were discussed. According to the experimental and theoretical results, the Sr-doping played a significant role in tuning the indirect band gap of BaSnO3 and influenced the electron-phonon interaction.

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