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Datta-Das transistor for atomtronic circuits using artificial gauge fields
Mesoscale and Nanoscale Physics · Submitted 18 Mar 2022
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim Our finding broadens the spectrum of atomtronics devices for implementation of operational spin-sensitive circuits.
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The abstract, sentence by sentence
Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin relaxations. These limitations are lifted considering atoms instead of electrons or holes as spin carriers. In this emerging field of atomtronics, we demonstrate the equivalent of a Datta-Das transistor using a degenerate Fermi gas of strontium atoms as spin carriers in interaction with a tripod laser-beams scheme. We explore the dependence of spin rotation, and we identify two key control parameters which we interpret as equivalent to the gate-source and drain-source voltages of a field effect transistor. Our finding broadens the spectrum of atomtronics devices for implementation of operational spin-sensitive circuits.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin relaxations. | background 0.94 | 0.04 | 0.03 | asserted 1.00 |
| s1 | These limitations are lifted considering atoms instead of electrons or holes as spin carriers. | background 0.72 | 0.08 | 0.07 | asserted 0.95 |
| s2 | In this emerging field of atomtronics, we demonstrate the equivalent of a Datta-Das transistor using a degenerate Fermi gas of strontium atoms as spin carriers in interaction with a tripod laser-beams scheme. | contribution 0.98 | 0.96 | 0.23 | asserted 1.00 |
| s3 | We explore the dependence of spin rotation, and we identify two key control parameters which we interpret as equivalent to the gate-source and drain-source voltages of a field effect transistor. | result 0.68 | 0.96 | 0.20 | asserted 1.00 |
| s4 | Our finding broadens the spectrum of atomtronics devices for implementation of operational spin-sensitive circuits. | interpretation 0.92 | 0.85 | 0.63 | asserted 0.99 |
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Original abstract
Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin relaxations. These limitations are lifted considering atoms instead of electrons or holes as spin carriers. In this emerging field of atomtronics, we demonstrate the equivalent of a Datta-Das transistor using a degenerate Fermi gas of strontium atoms as spin carriers in interaction with a tripod laser-beams scheme. We explore the dependence of spin rotation, and we identify two key control parameters which we interpret as equivalent to the gate-source and drain-source voltages of a field effect transistor. Our finding broadens the spectrum of atomtronics devices for implementation of operational spin-sensitive circuits.
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Forced evaporative cooling is performed on the partially polarized gas for $5.5$s by lowering the powers of the dipole trap beams [ref] .
Wave-packet Dynamics in Synthetic Non-Abelian Gauge Fields · Results · 0.88
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