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Tunable spin and orbital Edelstein effect at (111) LaAlO$_3$/SrTiO$_3$ interface
Materials Science · Submitted 15 Jul 2022
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim Beyond a gate-tunable spin Edelstein effect, we predict an orbital Edelstein effect an order of magnitude larger then the spin one at the (111) LaAlO$_3$/SrTiO$_3$ interface.
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Converting charge current into spin current is one of the main mechanisms exploited in spintronics. One prominent example is the Edelstein effect, namely the generation of a magnetization in response to an external electric field, which can be realized in systems with lack of inversion symmetry. If a system has electrons with an orbital angular momentum character, an orbital magnetization can be generated by the applied electric field giving rise to the so-called orbital Edelstein effect. Oxide heterostructures are the ideal platform for these effects due to the strong spin-orbit coupling and the lack of inversion symmetries. Beyond a gate-tunable spin Edelstein effect, we predict an orbital Edelstein effect an order of magnitude larger then the spin one at the (111) LaAlO$_3$/SrTiO$_3$ interface. We model the material as a bilayer of $t_{2g}$ orbitals using a tight-binding approach, while transport properties are obtained in the Boltzmann approach. We give an effective model at low filling which explains the non-trivial behaviour of the Edelstein response, showing that the hybridization between the electronic bands crucially impacts the Edelstein susceptibility.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | Converting charge current into spin current is one of the main mechanisms exploited in spintronics. | background 1.00 | 0.03 | 0.02 | asserted 1.00 |
| s1 | One prominent example is the Edelstein effect, namely the generation of a magnetization in response to an external electric field, which can be realized in systems with lack of inversion symmetry. | background 1.00 | 0.04 | 0.03 | asserted 0.97 |
| s2 | If a system has electrons with an orbital angular momentum character, an orbital magnetization can be generated by the applied electric field giving rise to the so-called orbital Edelstein effect. | background 1.00 | 0.06 | 0.03 | asserted 0.92 |
| s3 | Oxide heterostructures are the ideal platform for these effects due to the strong spin-orbit coupling and the lack of inversion symmetries. | background 1.00 | 0.05 | 0.02 | asserted 1.00 |
| s4 | Beyond a gate-tunable spin Edelstein effect, we predict an orbital Edelstein effect an order of magnitude larger then the spin one at the (111) LaAlO$_3$/SrTiO$_3$ interface. | result 0.84 | 0.88 | 0.89 | speculative 0.44 |
| s5 | We model the material as a bilayer of $t_{2g}$ orbitals using a tight-binding approach, while transport properties are obtained in the Boltzmann approach. | method 1.00 | 0.92 | 0.02 | asserted 0.99 |
| s6 | We give an effective model at low filling which explains the non-trivial behaviour of the Edelstein response, showing that the hybridization between the electronic bands crucially impacts the Edelstein susceptibility. | interpretation 0.45 | 0.94 | 0.08 | asserted 1.00 |
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Original abstract
Converting charge current into spin current is one of the main mechanisms exploited in spintronics. One prominent example is the Edelstein effect, namely the generation of a magnetization in response to an external electric field, which can be realized in systems with lack of inversion symmetry. If a system has electrons with an orbital angular momentum character, an orbital magnetization can be generated by the applied electric field giving rise to the so-called orbital Edelstein effect. Oxide heterostructures are the ideal platform for these effects due to the strong spin-orbit coupling and the lack of inversion symmetries. Beyond a gate-tunable spin Edelstein effect, we predict an orbital Edelstein effect an order of magnitude larger then the spin one at the (111) LaAlO$_3$/SrTiO$_3$ interface. We model the material as a bilayer of $t_{2g}$ orbitals using a tight-binding approach, while transport properties are obtained in the Boltzmann approach. We give an effective model at low filling which explains the non-trivial behaviour of the Edelstein response, showing that the hybridization between the electronic bands crucially impacts the Edelstein susceptibility.
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In order to take into account the electronic confinement, we use an accurate TB model, described in Ref. [ref] , of two layers of Ti atoms projected in the (111) direction, resulting in a honeycomb lattice as shown in Fig. [ref].
Gate tunable anomalous Hall effect: a Berry curvature probe at oxides interfaces · Introduction · 0.93
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