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Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well

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Zijin Lei, Erik Cheah, Filip Krizek, Rüdiger Schott, Thomas Bähler, Peter Märki, Werner Wegscheider, Mansour Shayegan
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Thomas Ihn, Klaus Ensslin

Mesoscale and Nanoscale Physics · Submitted 22 Aug 2022

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements.

how it is stated · asserted 1.00 read the record →

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arXiv ID2208.10427 (version 1)
Pith IDPESCEKOF, Pith's permanent record of this paper and its review
CitationErik Cheah, Filip Krizek, Klaus Ensslin, Mansour Shayegan, Peter M\"arki, R\"udiger Schott, Thomas B\"ahler, Thomas Ihn, Werner Wegscheider, Zijin Lei. "Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well." arXiv:2208.10427 (2022). https://pith.science/paper/PESCEKOF
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13.0 via TypeSafe API, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,189 input tokens.

What the abstract itself states, as probabilities: claims first 0.03 · states limitation 0.06 · human participants 0.01 · controlled comparison 0.03 · randomized assignment 0.01 · states quantitative result 0.10 · compares with prior results 0.07 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. contribution 0.86 0.95 0.06 asserted 1.00
s1 For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. result 1.00 0.94 0.20 asserted 1.00
s2 The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. result 1.00 0.95 0.16 asserted 1.00
s3 Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. method 0.98 0.95 0.05 asserted 0.94
s4 The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density. result 1.00 0.92 0.17 asserted 1.00

What kind of paper the classifier reports this is: empirical study 1.00 · evidence from observation or experiment 1.00.

What was examined, and what was not

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not examined
  • full text
  • figures and tables
  • references and citing sentences
  • relations to other papers
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  • P abstract
not run
  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density.

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Each citing sentence is taken from the citing paper's LaTeX source and typed by Pith's classifier. A label appears at probability 0.8 or more (0.95 for support), a contest at 0.7 or more; the quoted words are the citing authors'. How each label was checked · JSON

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