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A room-temperature moir\'e interlayer exciton laser

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arxiv 2302.01266 v1 pith:6LYC22SH submitted 2023-02-02 physics.optics cond-mat.mes-hall

A room-temperature moir\'e interlayer exciton laser

classification physics.optics cond-mat.mes-hall
keywords moirtopologicalelevatedemissionexcitonsinterlayerlaserlasing
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Moir\'e superlattices in van der Waals heterostructures offer highly tunable quantum systems with emergent electronic and excitonic properties such as superconductivity, topological edge states, and moir\'e-trapped excitons. Theoretical calculations predicted the existence of the moir\'e potential at elevated temperatures; however, its impact on the optical properties of interlayer excitons (IXs) at room temperature is lacking, and the benefits of the moir\'e effects for lasing applications remain unexplored. We report that the moir\'e potential in a molybdenum disulfide/tungsten diselenide (MoS2/WSe2) heterobilayer system can significantly enhance light emission, elongate the IX lifetime, and modulate the IX emission energy at room temperature. By integrating a moir\'e superlattice with a silicon topological nanocavity, we achieve ultra-low-threshold lasing at the technologically important telecommunication O-band thanks to the significant moir\'e modulation. Moreover, the high-quality topological nanocavities facilitate the highest spectral coherence of < 0.1 nm linewidth among all reported two-dimensional material-based laser systems. Our findings not only open a new avenue for studying correlated states at elevated temperatures, but also enable novel architectures for integrated on-chip photonics and optoelectronics.

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