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Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si
Materials Science · Submitted 17 Jul 2024
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim Here, we report a giant resistive switching of about 900 % at room temperature in disordered polycrystalline V2O3-Si thin film stabilized at the IMT phase boundary and associated structural transformation under a small electric field.
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The abstract, sentence by sentence
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive switching by minimal external field at room temperature is of paramount research and technological interest. Mott-IMT is often associated with structural modification, which is very important for optoelectronic and actuator applications. Here, we report a giant resistive switching of about 900 % at room temperature in disordered polycrystalline V2O3-Si thin film stabilized at the IMT phase boundary and associated structural transformation under a small electric field. The increase of electron population in the a1g band under the field is responsible for the Mott gap collapse that drives the structural transition. Furthermore, we also fabricated a room temperature Mott-FET with a channel ON/OFF resistive ratio of about 15. This study provides a fundamental mechanism of the Mott-IMT in V2O3 as well as its device applications.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. | background 1.00 | 0.05 | 0.05 | asserted 0.89 |
| s1 | Achieving this resistive switching by minimal external field at room temperature is of paramount research and technological interest. | background 0.90 | 0.04 | 0.04 | asserted 0.98 |
| s2 | Mott-IMT is often associated with structural modification, which is very important for optoelectronic and actuator applications. | background 0.99 | 0.05 | 0.03 | asserted 0.90 |
| s3 | Here, we report a giant resistive switching of about 900 % at room temperature in disordered polycrystalline V2O3-Si thin film stabilized at the IMT phase boundary and associated structural transformation under a small electric field. | result 0.76 | 0.97 | 0.82 | asserted 1.00 |
| s4 | The increase of electron population in the a1g band under the field is responsible for the Mott gap collapse that drives the structural transition. | interpretation 0.99 | 0.67 | 0.11 | asserted 1.00 |
| s5 | Furthermore, we also fabricated a room temperature Mott-FET with a channel ON/OFF resistive ratio of about 15. | result 0.77 | 0.97 | 0.14 | asserted 1.00 |
| s6 | This study provides a fundamental mechanism of the Mott-IMT in V2O3 as well as its device applications. | contribution 0.58 | 0.54 | 0.35 | asserted 1.00 |
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Original abstract
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive switching by minimal external field at room temperature is of paramount research and technological interest. Mott-IMT is often associated with structural modification, which is very important for optoelectronic and actuator applications. Here, we report a giant resistive switching of about 900 % at room temperature in disordered polycrystalline V2O3-Si thin film stabilized at the IMT phase boundary and associated structural transformation under a small electric field. The increase of electron population in the a1g band under the field is responsible for the Mott gap collapse that drives the structural transition. Furthermore, we also fabricated a room temperature Mott-FET with a channel ON/OFF resistive ratio of about 15. This study provides a fundamental mechanism of the Mott-IMT in V2O3 as well as its device applications.
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