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Single-molecule junctions map the interplay between electrons and chirality

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arxiv 2408.12258 v1 pith:Q6GSELGP submitted 2024-08-22 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords interactionschiralchiralityelectronspinatomicdifferentelectrons
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The interplay of electrons with a chiral medium has a diverse impact across science and technology, influencing drug separation, chemical reactions, and electronic transport. In particular, such electronchirality interactions can significantly affect charge and spin transport in chiral conductors, ranging from bulk semiconductors down to individual molecules. Consequentially, these interactions are appealing for spintronic manipulations. However, an atomistic mapping of the different electron chirality interactions and their potential for spintronics has yet to be reached. Here, we find that single molecule junctions based on helicene molecules behave as a combined magnetic diode and spin valve device. This dual functionality is used to identify the coexistence of different electron chirality interactions at the atomic scale. Specifically, we find that the magnetic diode behavior arises from an interaction between the angular momentum of electrons in a chiral medium and magnetic fields, whereas the spin valve functionality stems from an interaction between the electron spin and a chiral medium. The coexistence of these two interactions in the same atomic scale system is then used to identify the distinct properties of each interaction. This work uncovers the different electron chirality interactions available at the atomic level. The found concurrent existence of such interactions can broaden the available methods for spintronics by combining their peculiar functionalities.

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Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Machine learning delta-T noise for temperature bias estimation

    cond-mat.mes-hall 2024-11 conditional novelty 6.0 of 10

    A neural network trained on synthetic delta-T noise data estimates the temperature bias across atomic-scale junctions with mean error below 1 K when averaged over many junctions.

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