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Billion-Fold Enhancement of Room-Temperature Ionic Conductivity in h-RMnO3/YSZ Heterostructures via Electric-Field-Assisted Oxygen Deficiency Engineering

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arxiv 2411.06220 v1 pith:EJHXTYIB submitted 2024-11-09 cond-mat.mtrl-sci physics.app-ph

Billion-Fold Enhancement of Room-Temperature Ionic Conductivity in h-RMnO3/YSZ Heterostructures via Electric-Field-Assisted Oxygen Deficiency Engineering

classification cond-mat.mtrl-sci physics.app-ph
keywords ionicenhancementh-rmno3heterostructuresoxygenbillion-foldconductivitydeficiency
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Oxide heterostructures provide versatile platforms for manipulating electronic and ionic conductive states. In this study, we demonstrate a remarkable billion-fold enhancement in room-temperature ionic conductivity within h-RMnO3/YSZ heterostructures, achieved through electric-field-assisted oxygen deficiency engineering. This enhancement is closely linked to substantial oxygen depletion in YSZ and is tunable by varying the thickness of the h-RMnO3 film layer and the applied voltage bias. Our findings underscore the critical importance of interfacial design and vacancy control in enhancing ionic transport capabilities, paving the way for advanced applications in low-temperature energy harvesting, storage, and conversion technologies.

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