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Erbium doped yttrium oxide thin films grown by chemical vapour deposition for quantum technologies

T0 review · 2 major / 5 minor · reviewed 2026-08-12 · deepseek-v4-flash

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Pith's one-line read Chemical vapour deposition can grow erbium-doped yttria films whose telecom emission is comparable across very different substrates, including an epitaxial film on YSZ and a highly textured film on silicon.

desk verdict Solid CVD materials report with a genuinely useful hybrid MBE-template route, undercut by unmeasured Er content but not fatally. read the letter →

arxiv 2411.10196 v1 pith:B4J5M7B3 submitted 2024-11-15 cond-mat.mtrl-sci physics.app-ph

Anna Blin , Alexander Kolar , Andrew Kamen , Qian Lin , Xiaogang Liu , Aziz Benamrouche , Romain Bachelet , Philippe Goldner
show 3 more authors
Tian Zhong Diana Serrano Alexandre Tallaire
This is my paper · ORCID
classification cond-mat.mtrl-sciphysics.app-ph
keywords erbium-dopedyttriumoxidechemicalvapourdepositionthinfilmsquantumtechnologiestelecomwavelengthinhomogeneouslinewidthsiliconintegrationrare-earthions
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper tries to establish that chemical vapour deposition (CVD) — a scalable and flexible growth method — can produce erbium-doped yttrium oxide thin films good enough for quantum technologies, even on silicon substrates where oxide epitaxy is usually blocked by an amorphous interfacial layer. The authors grow films on silicon, sapphire, quartz, and yttria-stabilized zirconia, and on a silicon wafer carrying a molecular-beam-epitaxy yttria template. They find comparable erbium emission across all substrates, with an epitaxial film on YSZ and a 99% (111)-textured film on the silicon template. The telecom transition shows inhomogeneous linewidths of 9 to 14 GHz for the C2 site, close to MBE-grown films and far from the best ceramics. If the claim holds, CVD becomes a practical route for making the rare-earth-doped oxide layers that quantum memories and repeaters need, with a clear path to silicon integration.

What carries the argument

The central object is the $\mathrm{Er}^{3+}$ ion sitting on the two yttrium crystallographic sites (C2 and C3i) of cubic $\mathrm{Y}_2\mathrm{O}_3$, used as a local probe of crystalline quality. The $^4I_{13/2} \rightarrow ^4I_{15/2}$ transition near 1536 nm is the telecom-relevant transition, and its inhomogeneous linewidth measured by photoluminescence excitation at 2.9 K quantifies static disorder around the ions. The growth machinery is direct liquid injection CVD, with a set of substrates chosen to test whether the amorphous $\mathrm{SiO}_2$ interlayer on silicon can be circumvented by an MBE-grown $\mathrm{Y}_2\mathrm{O}_3$ template.

What would settle it

Measure the actual erbium concentration in each film, for example by Rutherford backscattering spectrometry or secondary-ion mass spectrometry, and correlate it with the measured lifetimes; if the concentrations differ substantially across substrates, the claim that the emission properties are substrate-independent would need to be revised.

Watch

Extended reading notes

Core claim

The paper reports that direct liquid injection chemical vapour deposition can grow well-crystallized erbium-doped yttrium oxide ($\mathrm{Er}{:}\mathrm{Y}_2\mathrm{O}_3$) films on silicon, sapphire, quartz, and yttria-stabilized zirconia (YSZ), and that the erbium emission is comparable on all of them despite very different film morphologies. On YSZ the film grows epitaxially with a cube-on-cube relationship, and on a molecular-beam-epitaxy-grown $\mathrm{Y}_2\mathrm{O}_3$ buffer on silicon it becomes 99% (111)-textured. Photoluminescence lifetimes of about 160 $\mu$s (visible, 564 nm) and 8 ms (infrared, 1536 nm) are close to bulk ceramics, and the inhomogeneous linewidth of the telecom transition for erbium in the C2 site is 9–14 GHz. The authors interpret this as evidence that the local crystalline environment of $\mathrm{Er}^{3+}$ is of high quality regardless of substrate, and they propose the CVD-on-template route as a path toward scalable silicon-integrated quantum devices.

Load-bearing premise

The paper assumes the erbium concentration is 670 ppm in every film, equal to the nominal precursor value, because no composition measurement is reported; if doping varies from film to film, the claimed substrate-independence of the optical properties could be an artifact of that variation.

Editorial extensions

If this is right

  • CVD can serve as a scalable deposition route for rare-earth-doped oxide films with telecom-relevant emission, without requiring MBE for the optically active layer.
  • The YSZ-grown film's cube-on-cube epitaxy makes it a candidate platform for coupling to optical cavities and microwave resonators, provided the surface roughness is addressed.
  • The 99% (111)-textured film on the MBE template shows that silicon integration is feasible by inserting an epitaxial oxide buffer, despite the native amorphous oxide issue.
  • The comparable linewidths across polycrystalline, textured, and epitaxial films imply that crystal orientation is not the limiting factor for inhomogeneous broadening in these films.
  • Annealing at 1000 °C broadens the lines, especially on silicon, so post-growth thermal processing should be avoided or re-optimized for this system.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • A direct composition measurement of the erbium concentration in each film would test whether the substrate-independent lifetimes are real or an artifact of doping variation, which the paper leaves open.
  • If the emission properties really are independent of substrate, the same CVD approach could be tested with other rare-earth dopants, such as europium or ytterbium, for different quantum-relevant transitions.
  • The rough columnar morphology on YSZ may limit waveguide fabrication; growing at lower temperature or with different precursors might promote smoother layer-by-layer growth, but this is an extrapolation beyond the paper's data.
  • The measured linewidths are still tens of times broader than the best yttria ceramics, so the next step would be to identify whether strain or doping dominates the broadening by measuring films with varied erbium concentrations.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

2 major / 5 minor

Summary. The paper reports the growth of Er:Y2O3 thin films by direct liquid injection CVD on a range of substrates: Si(100), Si(111), Si(111) with an MBE-grown Y2O3 template, quartz, sapphire, and YSZ(001). Structural characterization using SEM, AFM, and XRD shows substrate-dependent morphologies and textures, with fully (100)-oriented growth on YSZ, claimed to be epitaxial with a cube-on-cube relationship, and 99% (111) texture on the MBE template. Optical characterization at cryogenic temperatures shows visible and infrared Er3+ emission features that are qualitatively similar across all samples, with lifetimes of about 160 µs (4S3/2) and 8 ms (4I13/2), and inhomogeneous linewidths of 9-19 GHz for the telecom transition in the three samples examined at high resolution. The paper concludes that the emission properties are comparable across substrates, indicating a high-quality local crystal environment regardless of the substrate.

Significance. The paper demonstrates that a scalable and low-cost deposition technique (CVD) can produce rare-earth-doped oxide films with narrow inhomogeneous linewidths (9-14 GHz for the C2 site) on multiple substrates, including silicon via a hybrid MBE template. If the central comparability claim holds, this opens a practical route toward wafer-scale integration of Er-based quantum memories and telecom photon sources. The paper is clearly written, presents well-documented structural and optical data with reported fit uncertainties, and includes honest discussion of the remaining limitations. The main strength is the systematic side-by-side comparison of film quality across substrates, benchmarked against ceramic and MBE references.

major comments (2)
  1. [Section 4, Fig. 6, Table 1] The central claim that Er3+ emission properties are comparable across substrates implicitly assumes a constant Er3+ concentration in all films. The nominal concentration (670 ppm) is listed in Table 1, but no composition measurement (e.g., RBS, SIMS, XRF) is reported to verify the actual incorporated Er content. The authors themselves state in the Fig. 6 discussion that 'small differences in the effective Er3+ doping level between samples could also partly explain the lifetime differences observed [18].' Since lifetimes and inhomogeneous linewidths are known to depend on rare-earth concentration, the observed comparability could partly be a consequence of undetermined concentration variations rather than the local crystalline environment. I recommend measuring the Er content in each film or, if this is not feasible, explicitly reframing the conclusion as conditional on the as-assumed doping level and discussing the expected sensitivity of the observables to concentration.
  2. [Section 3, Fig. 4] The 'epitaxial' descriptor used for the Y2O3 film on YSZ is supported by θ-2θ scans, a rocking curve with FWHM of 0.7°, and off-axis phi scans over a 0-180° azimuthal range. However, a full 360° phi scan and/or a cross-sectional TEM measurement would considerably strengthen this claim by excluding the presence of 90°-rotated domains or an amorphous interfacial layer. Without such data, the statement in the abstract and conclusions that the film is 'epitaxial' is somewhat stronger than the presented evidence strictly warrants.
minor comments (5)
  1. [Fig. 6 and Section 4] The lifetimes are reported as approximate values ('about 160 µs and 8 ms') without per-sample uncertainties or the number of repeated measurements. Since the comparability of lifetimes is part of the main conclusion, reporting uncertainties and measurement statistics would make the comparison more transparent.
  2. [Eqs. (1) and (2), Section 3] The texture metric defined by Eqs. (1) and (2) is empirical and not a standard quantitative texture coefficient. It would be helpful to state explicitly what physical quantity this percentage corresponds to (e.g., deviation from random orientation) and to note its limitations.
  3. [Table 1] The note that 'sample thickness was estimated from ellipsometric measurement performed on a film grown on a silicon substrate simultaneously' is ambiguous. It is unclear whether a Si witness piece was co-loaded in each deposition run or whether a single calibration was used for all substrates. Clarifying this would help assess the reliability of the reported thicknesses.
  4. [Section 4, Fig. 8] The interpretation of the annealing results, namely 'diffusion of species between the film and the substrate' or 'stress release', is speculative and not directly supported by the presented data. Adding evidence such as SIMS depth profiles or XRD stress measurements, or presenting the interpretation as tentative, would strengthen this section.
  5. [General] There is a typo in the acknowledgements: 'Ackowledgements' should be 'Acknowledgements'. Also, references [2] and [7] are cited as arXiv preprints; if they have been published in peer-reviewed venues, updating the citations would be beneficial.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the paper's claims are direct measurements benchmarked against external references.

full rationale

This manuscript reports experimental results rather than deriving predictions from fitted inputs. The structural texture percentages are computed from Eqs. 1 and 2, which are explicit definitions relating measured XRD intensities to a ceramic reference; they are descriptive metrics, not independent predictions. The optical lifetimes and inhomogeneous linewidths are extracted by fitting measured decay curves and spectra, and the central comparison is made against an external ceramic reference and previously reported MBE-grown films. References to prior work by the same groups describe the reactor design, the MBE template growth, and benchmark values, but none of these citations carries an unverified claim that the present results reduce to. The unmeasured Er concentration is a possible confound for the cross-substrate comparability conclusion, but the authors acknowledge it and it is a correctness/robustness limitation, not a circular step. No self-definitional, fitted-input-called-prediction, or imported-uniqueness pattern is present.

Assumptions & free parameters 0 free parameters · 3 assumptions · 0 invented entities

No free parameters beyond the direct Lorentzian fits to measured spectra, no invented entities, and three domain assumptions that are standard for this materials system, with the doping-concentration assumption being the least verified.

assumptions (3)
  • domain assumption The Er3+ ions occupy the C2 and C3i crystallographic sites of cubic Y2O3 as assigned in prior literature (refs 18-20).
    Used to interpret the high-resolution excitation spectra in Section 4; if the site assignment were wrong, the reported site-specific linewidths would be mislabeled.
  • standard math Lorentzian line shapes are appropriate for extracting inhomogeneous linewidths from the PLE spectra.
    Used throughout Section 4 for the fits shown in Fig. 7 and Table 2; the choice of line shape affects the reported widths.
  • domain assumption The nominal Er doping of 670 ppm is assumed to be the actual concentration in every film, since no composition measurement is reported.
    The optical comparisons across substrates rest on the doping being comparable; the authors acknowledge possible variations (Section 4).

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Cite this review

Pith. "Pith review of Erbium doped yttrium oxide thin films grown by chemical vapour deposition for quantum technologies." pith.science (2026). https://pith.science/paper/B4J5M7B3

@misc{pith2026241110196,
  author       = {Pith},
  title        = {Pith review of: Erbium doped yttrium oxide thin films grown by chemical vapour deposition for quantum technologies},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/B4J5M7B3}},
  note         = {Machine review of arXiv:2411.10196}
}
read the original abstract

The obtention of quantum-grade rare-earth doped oxide thin films that can be integrated with optical cavities and microwave resonators is of great interest for the development of scalable quantum devices. Among the different growth methods, Chemical Vapour Deposition (CVD) offers high flexibility and has demonstrated the ability to produce oxide films hosting rare-earth ions with narrow linewidths. However, growing epitaxial films directly on silicon is challenging by CVD due to a native amorphous oxide layer formation at the interface. In this manuscript, we investigate the CVD growth of erbium-doped yttrium oxide (Er:Y2O3) thin films on different substrates, including silicon, sapphire, quartz or yttria stabilized zirconia (YSZ). Alternatively, growth was also attempted on an epitaxial Y2O3 template layer on Si (111) prepared by molecular beam epitaxy (MBE) in order to circumvent the issue of the amorphous interlayer. We found that the substrate impacts the film morphology and the crystalline orientations, with different textures observed for the CVD film on the MBE-oxide/Si template (111) and epitaxial growth on YSZ (001). In terms of optical properties, Er3+ ions exhibit visible and IR emission features that are comparable for all samples, indicating a high-quality local crystalline environment regardless of the substrate. Our approach opens interesting prospects to integrate such films into scalable devices for optical quantum technologies.

Figures

Figures reproduced from arXiv: 2411.10196 by the authors.

Figure 1
Figure 1. Fig.1. SEM images obtained for Er:Y2 [PITH_FULL_IMAGE:figures/full_fig_p005_1.png] view at source ↗
Figure 2
Figure 2. (a) AFM image of a Y2O3 film grown on YSZ and (b) measured line profiles as indicated on the image. 1 2 (a) (b) [PITH_FULL_IMAGE:figures/full_fig_p005_2.png] view at source ↗
Figure 3
Figure 3. (a) -2 XRD scans of the Y2O3 films grown on different substrates. The position of the (400) and (222) peaks is indicated by dashed lines. The intensity of the (400) diffraction peak has been multiplied by a factor as indicated on the graph for better clarity. (b) Bar diagram showing the calculated texture of the films [PITH_FULL_IMAGE:figures/full_fig_p007_3.png] view at source ↗
Figures from the paper (5 more)
Figure 4
Figure 4. Figure 4: (a) High resolution -2 XRD scans of a Y2O3 film grown on YSZ. (b) Corresponding omega scan around the (400) peak indicating a 0.7° linewidth. (c) and (d) Phi scans along the (311) and (611) directions of the YSZ substrate and the Y2O3 film respectively. 4. Spectrosco…
Figure 5
Figure 5. Figure 5: Optical properties of the films grown on different substrates. (a) Schematics of the different energy levels of Er3+ ions showing the excitation and emission channels (b) Photoluminescence spectra acquired in the visible range at 10 K. To get more insight into the clos…
Figure 6
Figure 6. Figure 6: PL decay curves of Er3+ ions in C2 site acquired (a) in the visible range (564 nm) and (b) in the IR range (1536 nm) at low temperature (10 K) for the Er:Y2O3 thin films grown on different substrates under 519.7 nm excitation. The calculated lifetimes are presented in …
Figure 7
Figure 7. Figure 7: Photoluminescence excitation spectra of the films grown on YSZ, Si (100) and Si (111)/Y2O3-MBE template, showing IR emission for erbium in the C2 (a) and C3i (b) sites as a function of laser excitation wavelength at 2.9 K. The Lorentzian fit associated with the data is…
Figure 8
Figure 8. Figure 8: Photoluminescence excitation spectra of the films grown on YSZ and Si (100), annealed 2 h at 1000 °C, showing IR emission for Er in the C2 (a) and C3i (b) sites as a function of laser excitation wavelength at 2.9 K. The Lorentzian fit associated with the data is plotte…

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