Pith. sign in

REVIEW 3 major objections 5 minor 64 references

Twist Angle Dependent Ultrafast Transient Dynamics of MoSe$_2$/WSe$_2$ van der Waals Heterostructures beyond the Exciton Mott Transition

T0 review · 3 major / 5 minor · reviewed 2026-08-12 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read Interlayer carriers in MoSe2/WSe2 recombine fastest at twist angles near 21.8° and 38.2°, where moiré Umklapp channels open.

desk verdict Real observation of twist-dependent interlayer recombination above the Mott transition, but the Auger claim is an unsupported attribution of a fit offset. read the letter →

arxiv 2411.17005 v3 pith:TGF32QP3 submitted 2024-11-26 cond-mat.mes-hall cond-mat.mtrl-sci

Vikas Arora , Pramoda K Nayak , Victor S Muthu , A K Sood This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords vanderWaalsheterostructuresMoSe2/WSe2twistangleMotttransitioninterlayerexcitonsUmklapprecombinationpump-probespectroscopyultrafastcarrierdynamics
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper reports ultrafast pump–probe measurements on MoSe2/WSe2 heterostructures at high excitation densities, above the exciton Mott transition, across a range of twist angles. Its central claim is that interlayer-localized electrons and holes recombine fastest when the twist angle is near the commensurate values 21.8° and 38.2°, because at those angles the moiré reciprocal lattice supplies additional radiative Umklapp recombination channels. A second, related claim is that the fitted strength of non-radiative interlayer Auger recombination ($A_3$) is also lowest at these commensurate angles, and that the recombination time is least sensitive to excitation fluence there. If correct, the work shows that large twist angles—not just small 'magic' angles—can be used to engineer carrier lifetimes in type-II van der Waals heterostructures, which matters for photodetectors, light-emitting devices, and photovoltaics.

What carries the argument

The central object is the moiré reciprocal lattice of the twisted heterobilayer. At the commensurate twist angles 21.8° and 38.2°, a reciprocal lattice vector of the moiré pattern compensates the momentum difference between the WSe2 valence-band maximum and the MoSe2 conduction-band minimum, turning a momentum-forbidden interlayer transition into a momentum-allowed radiative one. This 'Umklapp recombination' provides an additional decay path for the interlayer electron-hole plasma, and the paper uses it to explain the observed minima in $\tau_2$ and $A_3$ and the fluence insensitivity of $\tau_2$ at those angles.

What would settle it

Extend the differential reflectivity measurement beyond the 150 ps delay window at the same twist angles and fluences: if the supposedly constant $A_3$ component eventually decays, or if it persists unchanged at nanosecond delays, the Auger-channel assignment is falsified. Alternatively, perform time-resolved photoluminescence at the commensurate angles: if the Umklapp channel is radiative, a fast interlayer emission component with lifetime $\tau_2$ should appear, and its absence would refute the proposed mechanism.

Watch

Extended reading notes

Core claim

Above the exciton Mott transition, where interlayer excitons dissociate into an electron-hole plasma with electrons confined to MoSe2 and holes to WSe2, the paper finds that the recombination time $\tau_2$ of these spatially separated carriers is a non-monotonic function of twist angle with clear minima at roughly 20° and 38°. The minima sit close to the commensurate twist angles 21.8° and 38.2°, at which the MoSe2 conduction-band valleys and WSe2 valence-band valleys become aligned in the second Brillouin zone, so that a reciprocal lattice vector of the moiré superlattice can supply the missing momentum. This opens an additional radiative recombination channel—Umklapp recombination—that speeds up the decay. The paper further reports that the amplitude $A_3$ of the constant component in the differential reflectivity, which it assigns to non-radiative interlayer Auger recombination, shows the same double-minimum structure, and that $\tau_2$ is nearly fluence-independent at the commensurate angles. The interpretation is that the extra radiative channel depletes the carrier population available for Auger processes and makes the recombination time robust against increasing excitation density.

Load-bearing premise

The paper's second main claim—that Auger recombination strength is lowest at the commensurate angles—rests entirely on assigning the constant fit offset $A_3$ to non-radiative interlayer Auger recombination, an assignment made without independent support; if $A_3$ instead reflects trapping, a thermal background, or a long-lived decay that is flat on the 150 ps window, that conclusion does not follow.

Editorial extensions

If this is right

  • At twist angles near 21.8° and 38.2°, interlayer carriers in MoSe2/WSe2 recombine faster under high excitation, so these angles are natural choices for speeding up carrier extraction in devices.
  • The non-radiative interlayer Auger recombination strength is lowest at the commensurate angles, meaning less excitation energy is lost to Auger heating at those twists.
  • The recombination time at the commensurate angles is nearly independent of pump fluence up to 2.8 mJ/cm², indicating a built-in extra relaxation channel that saturates only weakly.
  • Intralayer recombination ($A_1$, $\tau_1$) shows no systematic twist-angle dependence, isolating the twist effect to the interlayer channel.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Editorial extension: the same Umklapp-facilitated recombination argument should hold for other type-II TMD heterobilayers such as MoS2/WSe2 at their commensurate angles, so a twist-sweep of recombination times there would test the mechanism's generality.
  • Editorial extension: because the Auger conclusion rests entirely on the constant offset $A_3$, a direct measurement of Auger recombination—through fluence-dependent time-resolved photoluminescence or two-pulse correlation—would either confirm or refute the assignment.
  • Editorial extension: the Raman mode-shift anomaly near the commensurate angles (maximum M1–M2 splitting) could serve as a rapid diagnostic for the same enhanced interlayer coupling, without needing pump-probe measurements.
  • Editorial extension: if the Umklapp channel is radiative, time-resolved photoluminescence at the commensurate angles should show a fast interlayer emission component with a lifetime matching $\tau_2$; this is a testable prediction the paper does not make.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript reports non-degenerate optical pump-optical probe measurements on MoSe2/WSe2 heterostructures at large twist angles, with excitation densities claimed to exceed the exciton Mott transition. Transient differential reflectivity traces are fit with Eq. (1), containing an error-function rise, a fast intralayer component (A1, τ1), a slow interlayer component (A2, τ2), and a constant offset A3. The central claims are that the interlayer recombination time τ2 is minimum near the commensurate twist angles of 21.8° and 38.2°, that the amplitude A3 assigned to non-radiative interlayer Auger recombination is also minimum at these angles, and that the weak fluence dependence of τ2 near these angles indicates additional relaxation channels. The τ2 minima are attributed to Umklapp recombination channels that become available at commensurate angles, following refs. [27,30].

Significance. If the claims are substantiated, the paper would establish that the moiré reciprocal lattice can control carrier recombination dynamics at high photoexcitation densities, a result with implications for twisted TMD optoelectronic devices. The study has notable strengths: a systematic twist-angle series, a complementary Raman characterization showing a maximum in the M1-M2 mode difference near the commensurate angles, and fluence-dependent measurements at two excitation densities. However, as written, the Auger-specific conclusion rests on an unvalidated identification of the constant fit offset A3, and the statistical support for the τ2 minima is not quantified. The core τ2 result is visually plausible in Fig. 5b, but the paper's central claim as stated includes the A3 Auger minimum, which is currently unsupported by any independent measurement or scaling test.

major comments (3)
  1. [Results and discussions, Eq. (1) and Fig. 4a (lower right panel)] The assignment of the constant offset A3 to non-radiative interlayer Auger recombination is asserted but not demonstrated. A3 is a time-independent offset over the 150 ps delay window, so it cannot distinguish an Auger process with a decay time much longer than the window from a thermal background, trapped-carrier population, long-lived incoherent signal, or any other slow relaxation channel. The sentence 'the A3 component is attributed to non-radiative interlayer Auger recombination' is an assumption, not a result. Because the abstract and conclusions state that the strength of non-radiative interlayer Auger recombination is minimum at the commensurate angles, this identification is load-bearing. The authors should provide independent support, for example pump-fluence scaling appropriate for a third-order Auger process, time-resolved photoluminescence, temperature dependence, or a control measurement that isolates Auger recombination; alternatively, the Auger-specific claim should be removed or explicitly downgraded to a speculative interpretation.
  2. [Results and discussions, Fig. 5b and Fig. 5c] The reported minima in τ2 and A3 near 20° and 38° are not accompanied by quantitative uncertainties or replicate statistics. The statement 'The error bars are smaller than the symbols' is insufficient because the reader cannot judge whether the minima are significant relative to scatter, and the cubic spline used to draw the solid blue lines can create apparent minima between sparse data points. The authors should report the number of independent measurements, the fitted parameter uncertainties (including correlated uncertainties from the multi-exponential fit), and ideally a statistical test or confidence interval demonstrating that the minima at approximately 20° and 38° are significant rather than fluctuations.
  3. [Results and discussions, Fig. 4b and the interpretation of τ2 minima] The Umklapp recombination mechanism is imported from refs. [27,30], which describe radiative recombination of interlayer excitons with specific valley alignment in the second Brillouin zone. The present experiments are performed above the exciton Mott transition, where the authors state that carriers form an electron-hole plasma localized in separate layers rather than bound excitons. The manuscript does not justify how an exciton-based Umklapp recombination picture applies to unbound interlayer electron-hole plasma, nor does it address possible effects of screening and band renormalization at the high densities used here. This is a correctness-risk concern, not a claim of circularity. A concrete test would be to compare the twist-angle dependence of τ2 below and above the Mott transition, or to provide a theoretical argument for Umklapp radiative recombination of free interlayer carriers.
minor comments (5)
  1. [Experimental details, first paragraph] The text says 'Non-generate optical pump-optical probe measurements'; this should read 'Non-degenerate optical pump-optical probe measurements'.
  2. [Experimental details, second paragraph] The sentence 'The sapphire substrate were chosen' has a subject-verb agreement error and should be 'The sapphire substrate was chosen'.
  3. [Abstract and Conclusions] The abstract and conclusions state the recombination time is minimum 'at the commensurate angles', whereas the data show minima near approximately 20° and 38°, which are close to but not exactly 21.8° and 38.2°. The wording should be 'near the commensurate angles' throughout for consistency with the data.
  4. [Results and discussions, Eq. (1)] Eq. (1) is described as a biexponential fit, but it contains two exponentials plus a constant offset; the description 'biexponential plus constant' would be more precise.
  5. [Results and discussions, Fig. 5d] The fluence-dependence panel uses dashed and dotted guide lines but does not state how many fluence values were measured or how the saturation threshold at 2.0 mJ/cm^2 was determined; adding this information would improve reproducibility.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: τ2 and A3 minima are direct fit results, and the Umklapp/Auger interpretations are imported from external references, not from a self-citation chain.

full rationale

The paper's central observations are experimental: Eq. (1) defines a biexponential-plus-offset fit, and Fig. 5b,c plot the fitted parameters τ2 and A3 versus twist angle. The minima near 21.8° and 38.2° are read off those fits; they are not generated by any prior constraint that the minima must occur at the commensurate angles. The Umklapp explanation is taken from external work by Seyler et al. [27] and Yu et al. [30] and is a post-hoc interpretation, not an input to the fitting. The only self-citations, [10] for sample preparation and [58] for phonon renormalization, are methodological and do not carry the central claim. The identification of the constant term A3 with non-radiative interlayer Auger recombination ('Motivated by the suggestion ... the A3 component is attributed to non-radiative interlayer Auger recombination') is an unsupported physical assignment: a time-independent offset over the 150 ps window could also represent trapping, thermal background, or a slow channel. That is a validity/interpretation weakness, not circularity, because the A3 values are direct fit outputs and no independent 'prediction' is derived from them. No equation reduces to its own inputs, and no fitted parameter is renamed as an independent prediction. Hence the derivation chain is self-contained; score 0.

Assumptions & free parameters 6 free parameters · 5 assumptions · 0 invented entities

The paper's quantitative conclusions reduce to parameters of a phenomenological biexponential fit; no independent theoretical model is constructed. The fit parameters τ2 and A3 are the effective free parameters of the central claim. The critical interpretive step, assigning A3 to Auger recombination, is an ad hoc assumption rather than a derived result. No new particles, forces, or conserved quantities are introduced.

free parameters (6)
  • A1 amplitude (intralayer recombination) = not tabulated; plotted vs twist angle in Fig. 5a
    Fitted coefficient of the fast exponential in Eq. (1); assigned to intralayer recombination; no systematic twist-angle dependence.
  • τ1 recombination time (intralayer) = monolayer values: 9.6±0.3 ps (MoSe2), 1.4±0.15 ps and 20.8±0.5 ps (WSe2)
    Fast decay constant in Eq. (1); used as baseline for the heterostructure response.
  • A2 amplitude (interlayer recombination) = plotted in Fig. 5b; reported as twist-angle independent
    Fitted coefficient of the slow exponential; assigned to interlayer electron-hole recombination.
  • τ2 recombination time (interlayer) = minima near 20° and 38°; numeric values not tabulated
    Central observable; fitted slow decay constant; minima near commensurate angles are the main experimental claim.
  • A3 constant offset = minima near 20° and 38°; numeric values not tabulated
    Constant term in Eq. (1); attributed without independent support to non-radiative interlayer Auger recombination. This is the weakest interpretive parameter.
  • τr rise time = 0.7-1.0 ps depending on twist angle
    Rise parameter in Eq. (1); not central to the main claims.
assumptions (5)
  • domain assumption Type-II band alignment of MoSe2/WSe2 with electrons transferring to MoSe2 and holes to WSe2
    Taken from refs [9,10]; used to assign A2 to interlayer recombination and to interpret Raman shifts as charge-transfer effects.
  • domain assumption The photoexcitation density of about 6.1×10^14 cm^-2 at 2 mJ/cm^2 exceeds the exciton Mott transition threshold of about 4×10^12 cm^-2
    Borrowed from ref [45]; the claim of operating 'beyond the Mott transition' depends on this density conversion and threshold value.
  • domain assumption Umklapp recombination becomes allowed near commensurate twist angles 21.8° and 38.2°
    Adopted from refs [27,30]; the central interpretation of the observed τ2 minima relies on this external theory.
  • domain assumption The 800 nm probe and differential reflectivity signal track the electron-hole carrier population in the heterostructure
    Assumed throughout; no detailed spectral assignment or optical cross-section analysis is provided.
  • ad hoc to paper The biexponential plus constant fitting function of Eq. (1) separates intralayer (A1), interlayer (A2), and Auger (A3) dynamics
    The A3 assignment is asserted rather than derived; this is the load-bearing modeling assumption behind the Auger minimum claim.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Twist Angle Dependent Ultrafast Transient Dynamics of MoSe$_2$/WSe$_2$ van der Waals Heterostructures beyond the Exciton Mott Transition." pith.science (2026). https://pith.science/paper/TGF32QP3

@misc{pith2026241117005,
  author       = {Pith},
  title        = {Pith review of: Twist Angle Dependent Ultrafast Transient Dynamics of MoSe$_2$/WSe$_2$ van der Waals Heterostructures beyond the Exciton Mott Transition},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/TGF32QP3}},
  note         = {Machine review of arXiv:2411.17005}
}
abstract

Two-dimensional van der Waals heterostructures (HS) exhibit twist-angle ($\theta$) dependent interlayer charge transfer, driven by moir\'e potential that tunes the electronic band structure with varying $\theta$. Apart from the magic angles of $\sim$3$^\circ$ and $\sim$57.5$^\circ$ that show flat valence bands (twisted WSe$_2$ bilayer), the commensurate angles of 21.8$^\circ$ and 38.2$^\circ$ reveal the Umklapp light coupling of interlayer excitons. We report our results on non-degenerate optical pump-optical probe spectroscopy of MoSe$_2$/WSe$_2$ HS at large twist angles under high photoexcitation densities above the Mott transition threshold, generating interlayer localized charge carriers. We show that the recombination time of electrons and holes is minimum at the commensurate angles. The strength of non-radiative interlayer Auger recombination also shows a minimum at the commensurate angles. The fluence dependence of interlayer carrier recombination time suggests additional relaxation channels near the commensurate angles. This study emphasizes the significance of the large twist angle of HS in developing transition metal dichalcogenides-based optoelectronic devices.

Figures

Figures reproduced from arXiv: 2411.17005 by the authors.

Figure 1
Figure 1. (a) Microscopic image of MoSe2/WSe2 HS depicting WSe2 as a bottom layer (big triangles) with dull contrast and MoSe2 as a top layer (smaller triangles) with brighter contrast, (b) Angle evalu￾ation between two monolayers with the blue(red) triangle as a boundary of WSe2(MoSe2) monolayers. 9 [PITH_FULL_IMAGE:figures/full_fig_p009_1.png] view at source ↗
Figure 2
Figure 2. (a) The Raman spectrum for HS at a θ = 49◦ . M1(M2) represents the A1g mode of MoSe2(WSe2), The respective modes are as follows: M1(238.5 cm−1 ), M2(249 cm−1 ), M3(258.5 cm−1 ), M4(286 cm−1 ), M5(305 cm−1 ), M6(353 cm−1 ), M7(373 cm−1 ), M8(394 cm−1 ). (b) The difference of frequencies of modes M1 and M2 is presented with twist angles. The difference is maximum in the proximity of commensurate angles of 21.8◦ and 38… view at source ↗
Figure 3
Figure 3. (a) Time evolution of ∆R/R for ML MoSe2 (blue circles), ML WSe2 (red circles), HS MoSe2/WSe2 at θ=20◦ (pink circles), θ=35◦ (black circles). (b) The differential reflectivity ∆R/R for HS MoSe2/WSe2 at twist angle of θ=20◦ (blue circles) is fitted using Eq.(1) (red solid line). The inset shows the fit of the experimental data up to 30 ps. 11 [PITH_FULL_IMAGE:figures/full_fig_p011_3.png] view at source ↗
Figures from the paper (2 more)
Figure 4
Figure 4. Figure 4: Type II band structure of HS MoSe2/WSe2, (a) Top panel: Photoexcitation: Electrons are transferred to the conduction band of MoSe2 and WSe2, Charge transfer: electrons (holes) transfer from conduction (valence) band of WSe2 (MoSe2) to MoSe2 (WSe2), Carriers Localizatio…
Figure 5
Figure 5. Figure 5: Twist-angle dependence of (a) amplitude (A [PITH_FULL_IMAGE:figures/full_fig_p013_5.png]

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

64 extracted references · 64 canonical work pages

  1. [1]

    Berkelbach, Heather M

    Alexey Chernikov, Timothy C. Berkelbach, Heather M. Hill, Albert Rigosi, Yilei Li, Burak Aslan, David R. Reichman, Mark S. Hybertsen, and Tony F. Heinz. Exciton binding energy and nonhy- drogenic rydberg series in monolayer WS 2.Phys. Rev. Lett.,113:076802, (2014)

    work page 2014

  2. [2]

    Tightly bound excitons in monolayer WSe 2.Phys

    Keliang He, Nardeep Kumar, Liang Zhao, Zefang Wang, Kin Fai Mak, Hui Zhao, and Jie Shan. Tightly bound excitons in monolayer WSe 2.Phys. Rev. Lett.,113:026803, (2014)

    work page 2014

  3. [3]

    Lane, Zeming Qi, and Hui Zhao

    Yuanyuan Li, Qiannan Cui, Frank Ceballos, Samuel D. Lane, Zeming Qi, and Hui Zhao. Ultrafast interlayer electron transfer in incommensurate transition metal dichalcogenide homobilayers.Nano Letters,17(11):6661–6666, (2017)

    work page 2017

  4. [4]

    Ajayan, Jun Lou, and Hui Zhao

    Nardeep Kumar, Sina Najmaei, Qiannan Cui, Frank Ceballos, Pulickel M. Ajayan, Jun Lou, and Hui Zhao. Second harmonic microscopy of monolayer MoS 2.Phys. Rev. B,87:161403, (2013)

    work page 2013

  5. [5]

    Dean, and Tony F

    Yilei Li, Yi Rao, Kin Fai Mak, Yumeng You, Shuyuan Wang, Cory R. Dean, and Tony F. Heinz. Probing symmetry properties of few-layer MoS 2 and h-BN by optical second-harmonic generation. Nano Letters,13(7):3329–3333, (2013)

    work page 2013

  6. [6]

    Malard, Thonimar V

    Leandro M. Malard, Thonimar V. Alencar, Ana Paula M. Barboza, Kin Fai Mak, and Ana M. de Paula. Observation of intense second harmonic generation from MoS 2 atomic crystals.Phys. Rev. B,87:201401, (2013)

    work page 2013

  7. [7]

    Valley polarization in MoS 2 monolayers by optical pumping.Nature Nanotechnology,7:490–493, (2012)

    Hualing Zeng, Junfeng Dai, Wang Yao, Di Xiao, and Xiaodong Cui. Valley polarization in MoS 2 monolayers by optical pumping.Nature Nanotechnology,7:490–493, (2012)

    work page 2012

  8. [8]

    Kin Fai Mak, Keliang He, Jie Shan, and Tony F. Heinz. Control of valley polarization in monolayer MoS2 by optical helicity.Nature Nanotechnology,7:494–498, (2012)

    work page 2012

Show all 64 references
  1. [9]

    Wallace, and Kyeongjae Cho

    Cheng Gong, Hengji Zhang, Weihua Wang, Luigi Colombo, Robert M. Wallace, and Kyeongjae Cho. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors.Applied Physics Letters,103(5):053513, (2013)

    2013

  2. [10]

    Pramoda K. Nayak, Yevhen Horbatenko, Seongjoon Ahn, Gwangwoo Kim, Jae-Ung Lee, Kyung Yeol Ma, A-Rang Jang, Hyunseob Lim, Dogyeong Kim, Sunmin Ryu, Hyeonsik Cheong, Noejung Park, and Hyeon Suk Shin. Probing evolution of twist-angle-dependent interlayer excitons in MoSe2/WSe2 va...

    2017

  3. [11]

    Purz, Eric W

    Torben L. Purz, Eric W. Martin, Pasqual Rivera, William G. Holtzmann, Xiaodong Xu, and Steven T. Cundiff. Coherent exciton-exciton interactions and exciton dynamics in a MoSe 2/WSe2 heterostructure.Phys. Rev. B,104:L241302, (2021)

    2021

  4. [12]

    Schaibley

    John R. Schaibley. Control of interlayer valley excitons in atomically-thin MoSe2-WSe2 heterostruc- tures. InOPTO, (2017)

    2017

  5. [13]

    Distinguishing ultrafast energy transfer in atomically thin MoS2/WS2 heterostructures.Small,18(44):2204317, (2022)

    Yan Zeng, Wei Dai, Rundong Ma, Zhe Li, Zhenwei Ou, Cheng Wang, Yiling Yu, Tong Zhu, Xi- aoze Liu, Ti Wang, and Hongxing Xu. Distinguishing ultrafast energy transfer in atomically thin MoS2/WS2 heterostructures.Small,18(44):2204317, (2022)

    2022

  6. [14]

    Sanchez, Jiamin Quan, Akshay Singh, Jacob Embley, Andr´ e Zepeda, Marshall Campbell, Travis Autry, Takashi Taniguchi, Kenji Watanabe, Nanshu Lu, Sanjay K

    Kha Tran, Galan Moody, Fengcheng Wu, Xiaobo Lu, Junho Choi, Kyounghwan Kim, Amritesh Rai, Daniel A. Sanchez, Jiamin Quan, Akshay Singh, Jacob Embley, Andr´ e Zepeda, Marshall Campbell, Travis Autry, Takashi Taniguchi, Kenji Watanabe, Nanshu Lu, Sanjay K. Banerjee, Kevin L. Sil...

    2019

  7. [15]

    Regan, Aiming Yan, M

    Chenhao Jin, Emma C. Regan, Aiming Yan, M. Iqbal Bakti Utama, Danqing Wang, Sihan Zhao, Ying Qin, Sijie Yang, Zhiren Zheng, Shenyang Shi, Kenji Watanabe, Takashi Taniguchi, Sefaattin Tongay, Alex Zettl, and Feng Wang. Observation of moir´ e excitons in WSe2/WS2 heterostructure...

    2019

  8. [16]

    McHugh, Vladimir V

    James G. McHugh, Vladimir V. Enaldiev, and Vladimir I. Fal’ko. Moir´ e superstructures in marginally twisted NbSe 2 bilayers.Phys. Rev. B,108:224111, Dec (2023)

    2023

  9. [17]

    Moir´ e-bose-hubbard model for interlayer excitons in twisted transition metal dichalcogenide heterostructures.Phys

    Niclas G¨ otting, Frederik Lohof, and Christopher Gies. Moir´ e-bose-hubbard model for interlayer excitons in twisted transition metal dichalcogenide heterostructures.Phys. Rev. B,105:165419, (2022)

    2022

  10. [18]

    Cordovilla Leon, Zhengyang Lyu, Hongchao Xie, Jize Hou, Yanzhao Lu, Xiaoyu Guo, Austin Kaczmarek, Takashi Taniguchi, Kenji Watanabe, Liuyan Zhao, Li Yang, and Parag B

    Zidong Li, Xiaobo Lu, Darwin F. Cordovilla Leon, Zhengyang Lyu, Hongchao Xie, Jize Hou, Yanzhao Lu, Xiaoyu Guo, Austin Kaczmarek, Takashi Taniguchi, Kenji Watanabe, Liuyan Zhao, Li Yang, and Parag B. Deotare. Interlayer exciton transport in MoSe2/WSe2 heterostructures.ACS Nano...

    2021

  11. [19]

    Baimuratov, Stanislav Yu

    Michael F¨ org, Anvar S. Baimuratov, Stanislav Yu. Kruchinin, Ilia A. Vovk, Johannes Scherzer, Jonathan F¨ orste, Victor Funk, Kenji Watanabe, Takashi Taniguchi, and Alexander H¨ ogele. Moir´ e 15 excitons in MoSe 2-WSe2 heterobilayers and heterotrilayers.Nature Communications...

    2021

  12. [20]

    V. V. Enaldiev, F. Ferreira, J. G. McHugh, and Vladimir I. Fal’ko. Self-organized quantum dots in marginally twisted MoSe 2/WSe2 and MoS 2/WS2 bilayers.npj 2D Materials and Applications, 6(1):74, (2022)

    2022

  13. [21]

    Forrest, and Hui Deng

    Long Zhang, Zhe Zhang, Fengcheng Wu, Danqing Wang, Rahul Gogna, Shaocong Hou, Kenji Watanabe, Takashi Taniguchi, Krishnamurthy Kulkarni, Thomas Kuo, Stephen R. Forrest, and Hui Deng. Twist-angle dependence of moir´ e excitons in WS2/MoSe2 heterobilayers.Nature Com- munications...

    2020

  14. [22]

    Zhiming Zhang, Yimeng Wang, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Emanuel Tutuc, and Brian J. LeRoy. Flat bands in twisted bilayer transition metal dichalcogenides.Nature Physics, 16(11):1093–1096, (2020)

    2020

  15. [23]

    Magic in twisted transition metal dichalcogenide bilayers.Nature Communications,12(1):6730, (2021)

    Trithep Devakul, Valentin Cr´ epel, Yang Zhang, and Liang Fu. Magic in twisted transition metal dichalcogenide bilayers.Nature Communications,12(1):6730, (2021)

    2021

  16. [24]

    Naik and Manish Jain

    Mit H. Naik and Manish Jain. Ultraflatbands and shear solitons in Moir´ e patterns of twisted bilayer transition metal dichalcogenides.Phys. Rev. Lett.,121:266401, (2018)

    2018

  17. [25]

    Anoma- lous redshift in interlayer exciton emission with increasing twist angle in WSe 2/MoSe2 heterostruc- tures.2D Materials,11(2):025034, (2024)

    Chirag Chandrakant Palekar, Joakim Hagel, Barbara Rosa, Samuel Brem, Ching-Wen Shih, Imad Limame, Martin von Helversen, Sefaattin Tongay, Ermin Malic, and Stephan Reitzenstein. Anoma- lous redshift in interlayer exciton emission with increasing twist angle in WSe 2/MoSe2 heter...

    2024

  18. [26]

    Puretzky, Christopher M

    Kai Wang, Bing Huang, Mengkun Tian, Frank Ceballos, Ming-Wei Lin, Masoud Mahjouri-Samani, Abdelaziz Boulesbaa, Alexander A. Puretzky, Christopher M. Rouleau, Mina Yoon, Hui Zhao, Kai Xiao, Gerd Duscher, and David B. Geohegan. Interlayer coupling in twisted WSe 2/WS2 bilayer he...

    2016

  19. [27]

    Seyler, Pasqual Rivera, Hongyi Yu, Nathan P

    Kyle L. Seyler, Pasqual Rivera, Hongyi Yu, Nathan P. Wilson, Essance L. Ray, David G. Man- drus, Jiaqiang Yan, Wang Yao, and Xiaodong Xu. Signatures of moir´ e-trapped valley excitons in MoSe2/WSe2 heterobilayers.Nature,567:66–70, (2019). 16

    2019

  20. [28]

    Identification of twist-angle-dependent excitons in WS 2/WSe2.National Science Review,9, (2021)

    Ke Wu, Hongxia Zhong, Quanbing Guo, Jibo Tang, Jing Zhang, Lihua Qian, Zhifeng Shi, Chendong Zhang, Shengjun Yuan, Shunping Zhang, and Hongxing Xu. Identification of twist-angle-dependent excitons in WS 2/WSe2.National Science Review,9, (2021)

    2021

  21. [29]

    Raman scattering investigation of twisted WS2/MoS2 heterostructures: interlayer mechanical coupling versus charge transfer.Nano Research,14:2215–2223, (2021)

    Lishu Wu, Chunxiao Cong, Jingzhi Shang, Weihuang Yang, Yu Chen, Jiadong Zhou, Wei Ai, Yanlong Wang, Shun Feng, Hongbo Zhang, Zheng Liu, and Ting Yu. Raman scattering investigation of twisted WS2/MoS2 heterostructures: interlayer mechanical coupling versus charge transfer.Nano ...

    2021

  22. [30]

    Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers.Phys

    Hongyi Yu, Yong Wang, Qingjun Tong, Xiaodong Xu, and Wang Yao. Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers.Phys. Rev. Lett., 115:187002, (2015)

    2015

  23. [31]

    Engineering symmetry breaking in twisted Mos2/MoSe2 heterostructures for optimal thermoelectric performance.ACS Applied Materials & Interfaces,16(19):25124–25135, (2024)

    Hanping Xiong, Xianhua Nie, Li Zhao, and Shuai Deng. Engineering symmetry breaking in twisted Mos2/MoSe2 heterostructures for optimal thermoelectric performance.ACS Applied Materials & Interfaces,16(19):25124–25135, (2024). PMID: 38709893

    2024

  24. [32]

    Van der waals twistronics in a MoS2/WS2 heterostructure.Computational Condensed Matter, 35:e00797, (2023)

    Saurav Sachin, Puja Kumari, Neelam Gupta, Shivani Rani, Subhasmita Kar, and Soumya Jyoti Ray. Van der waals twistronics in a MoS2/WS2 heterostructure.Computational Condensed Matter, 35:e00797, (2023)

    2023

  25. [33]

    Johnson, Johnathan D

    Amalya C. Johnson, Johnathan D. Georgaras, Xiaozhe Shen, Helen Yao, Ashley P. Saunders, Helen J. Zeng, Hyungjin Kim, Aditya Sood, Tony F. Heinz, Aaron M. Lindenberg, Duan Luo, Felipe H. da Jornada, and Fang Liu. Hidden phonon highways promote photoinduced interlayer energy tra...

    2024

  26. [34]

    Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures.Nature Nanotechnology,9(9):682–686, (2014)

    Xiaoping Hong, Jonghwan Kim, Su-Fei Shi, Yu Zhang, Chenhao Jin, Yinghui Sun, Sefaattin Ton- gay, Junqiao Wu, Yanfeng Zhang, and Feng Wang. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures.Nature Nanotechnology,9(9):682–686, (2014)

    2014

  27. [35]

    Bellus, Hsin-Ying Chiu, and Hui Zhao

    Frank Ceballos, Matthew Z. Bellus, Hsin-Ying Chiu, and Hui Zhao. Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der waals heterostructure.ACS Nano,8(12):12717– 12724, (2014)

    2014

  28. [36]

    Bellus, Hsin-Ying Chiu, and Hui Zhao

    Frank Ceballos, Matthew Z. Bellus, Hsin-Ying Chiu, and Hui Zhao. Probing charge transfer excitons in a MoSe 2-WS2 van der waals heterostructure.Nanoscale,7:17523–17528, (2015). 17

    2015

  29. [37]

    Ultrafast charge transfer in MoS 2/WSe2 p–n heterojunction.2D Materials, 3(2):025020, (2016)

    Bo Peng, Yu Guannan, Liu Xinfeng, Bo Liu, Xiao Liang, Lei Bi, Longjiang Deng, Tze Chien Sum, and Kian Ping Loh. Ultrafast charge transfer in MoS 2/WSe2 p–n heterojunction.2D Materials, 3(2):025020, (2016)

    2016

  30. [38]

    Peymon Zereshki, Yaqing Wei, Run Long, and Hui Zhao. Layer-coupled states facilitate ultrafast charge transfer in a transition metal dichalcogenide trilayer heterostructure.The Journal of Physical Chemistry Letters,9(20):5970–5978, (2018)

    2018

  31. [39]

    Krause, S

    R. Krause, S. Aeschlimann, M. Ch´ avez-Cervantes, R. Perea-Causin, S. Brem, E. Malic, S. Forti, F. Fabbri, C. Coletti, and I. Gierz. Microscopic understanding of ultrafast charge transfer in van der waals heterostructures.Phys. Rev. Lett.,127:276401, (2021)

    2021

  32. [40]

    Robust stacking-independent ultrafast charge transfer in MoS 2/WS2 bilayers.ACS Nano,11(12):12020–12026, (2017)

    Ziheng Ji, Hao Hong, Jin Zhang, Qi Zhang, Wei Huang, Ting Cao, Ruixi Qiao, Can Liu, Jing Liang, Chuanhong Jin, Liying Jiao, Kebin Shi, Sheng Meng, and Kaihui Liu. Robust stacking-independent ultrafast charge transfer in MoS 2/WS2 bilayers.ACS Nano,11(12):12020–12026, (2017)

    2017

  33. [41]

    Interlayer-state-coupling dependent ultrafast charge transfer in MoS 2/WS2 bilayers

    Jin Zhang, Hao Hong, Chao Lian, Wei Ma, Xiaozhi Xu, Xu Zhou, Huixia Fu, Kaihui Liu, and Sheng Meng. Interlayer-state-coupling dependent ultrafast charge transfer in MoS 2/WS2 bilayers. Advanced Science,4(9):1700086, (2017)

    2017

  34. [42]

    Haiming Zhu, Jue Wang, Zizhou Gong, Young Duck Kim, James Hone, and X.-Y. Zhu. Interfacial charge transfer circumventing momentum mismatch at two-dimensional van der Waals heterojunc- tions.Nano Letters,17(6):3591–3598, (2017)

    2017

  35. [43]

    Hendry, M

    E. Hendry, M. Koeberg, and M. Bonn. Exciton and electron-hole plasma formation dynamics in ZnO.Phys. Rev. B,76:045214, (2007)

    2007

  36. [44]

    Daveau, Javier Miguel-S´ anchez, Peter Lodahl, and Søren Stobbe

    Gabija Kirˇ sansk˙ e, Petru Tighineanu, Rapha¨ el S. Daveau, Javier Miguel-S´ anchez, Peter Lodahl, and Søren Stobbe. Observation of the exciton Mott transition in the photoluminescence of coupled quantum wells.Phys. Rev. B,94:155438, (2016)

    2016

  37. [45]

    Jue Wang, Jenny Ardelean, Yusong Bai, Alexander Steinhoff, Matthias Florian, Frank Jahnke, Xiaodong Xu, Mackillo Kira, James Hone, and X.-Y. Zhu. Optical generation of high carrier densities in 2D semiconductor heterobilayers.Science Advances,5(9):eaax0145, (2019)

    2019

  38. [46]

    Stern, V

    M. Stern, V. Garmider, V. Umansky, and I. Bar-Joseph. Mott transition of excitons in coupled quantum wells.Phys. Rev. Lett.,100:256402, (2008). 18

    2008

  39. [47]

    Rigosi, Heather M

    Albert F. Rigosi, Heather M. Hill, Yilei Li, Alexey Chernikov, and Tony F. Heinz. Probing interlayer interactions in transition metal dichalcogenide heterostructures by optical spectroscopy: MoS2/WS2 and MoSe2/WSe2.Nano Letters,15(8):5033–5038, (2015)

    2015

  40. [48]

    Weiss, Xidong Duan, Hung-Chieh Cheng, Yu Huang, and Xiangfeng Duan

    Yuan Liu, Nathan O. Weiss, Xidong Duan, Hung-Chieh Cheng, Yu Huang, and Xiangfeng Duan. Van der waals heterostructures and devices.Nature Reviews Materials,1(9):16042, (2016)

    2016

  41. [49]

    Direct detection of inhomogeneity in cvd-grown 2d tmd materials via k-means clustering raman analysis.Nanomaterials,12(3), 2022

    Hang Xin, Jingyun Zhang, Cuihong Yang, and Yunyun Chen. Direct detection of inhomogeneity in cvd-grown 2d tmd materials via k-means clustering raman analysis.Nanomaterials,12(3), 2022

    2022

  42. [50]

    Exploring atomic defects in molybdenum disulphide monolayers.Nature materials,12:554–561, (2013)

    A M van der Zande, P Y Huang, D A Chenet, T C Berkelbach, Y You, G H Lee, T F Heinz, D R Reichman, D A Muller, and J C Hone. Exploring atomic defects in molybdenum disulphide monolayers.Nature materials,12:554–561, (2013)

    2013

  43. [51]

    Lauritsen, Jakob Kibsgaard, Stig Helveg, Henrik Topsøe, Bjerne S

    Jeppe V. Lauritsen, Jakob Kibsgaard, Stig Helveg, Henrik Topsøe, Bjerne S. Clausen, Erik Lægs- gaard, and Flemming Besenbacher. Size-dependent structure of MoS 2 nanocrystals.Nature Nan- otechnology,2(1):53–58, (2007)

    2007

  44. [52]

    Strong second-harmonic generation in atomic layered GaSe

    Xu Zhou, Jingxin Cheng, Yubing Zhou, Ting Cao, Hao Hong, Zhimin Liao, Shiwei Wu, Hailin Peng, Kaihui Liu, and Dapeng Yu. Strong second-harmonic generation in atomic layered GaSe. Journal of the American Chemical Society,137(25):7994–7997, (2015)

    2015

  45. [53]

    Louie, and Feng Wang

    Kaihui Liu, Liming Zhang, Ting Cao, Chenhao Jin, Diana Qiu, Qin Zhou, Alex Zettl, Peidong Yang, Steve G. Louie, and Feng Wang. Evolution of interlayer coupling in twisted molybdenum disulfide bilayers.Nature Communications,5:4966, (2014)

    2014

  46. [54]

    Anharmonicity of monolayer MoS2, MoSe2, and WSe2: A Raman study under high pressure and elevated temperature

    Mei Yang, Xuerui Cheng, Yuanyuan Li, Yufen Ren, Miao Liu, and Zeming Qi. Anharmonicity of monolayer MoS2, MoSe2, and WSe2: A Raman study under high pressure and elevated temperature. Applied Physics Letters,110(9):093108, (2017)

    2017

  47. [55]

    Twist-angle-dependent op- toelectronics in a few-layer transition-metal dichalcogenide heterostructure.ACS Applied Materials & Interfaces,11(2):2470–2478, (2019)

    Woosuk Choi, Imtisal Akhtar, Malik Abdul Rehman, Minwook Kim, Dongwoon Kang, Jongwan Jung, Yoon Myung, Jungcheol Kim, Hyeonsik Cheong, and Yongho Seo. Twist-angle-dependent op- toelectronics in a few-layer transition-metal dichalcogenide heterostructure.ACS Applied Materials &...

    2019

  48. [56]

    Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer.Nanotechnology,34:045702, (2023)

    Lama Khalil, Debora Pierucci, Emilio Velez-Fort, Jos´ e Avila, C´ eline Vergnaud, and Pavel Dudin. Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer.Nanotechnology,34:045702, (2023). 19

    2023

  49. [57]

    Phonon and raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multi- layer to bulk material.Chem

    Xin Zhang, Xiao-Fen Qiao, Wei Shi, Jiang-Bin Wu, De-Sheng Jiang, and Ping-Heng Tan. Phonon and raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multi- layer to bulk material.Chem. Soc. Rev.,44:2757–2785, (2015)

    2015

  50. [58]

    Biswanath Chakraborty, Achintya Bera, D. V. S. Muthu, Somnath Bhowmick, U. V. Waghmare, and A. K. Sood. Symmetry-dependent phonon renormalization in monolayer MoS2 transistor.Phys. Rev. B,85:161403, (2012)

    2012

  51. [59]

    Brus, Tony F

    Changgu Lee, Hugen Yan, Louis E. Brus, Tony F. Heinz, James Hone, and Sunmin Ryu. Anomalous lattice vibrations of single and few-layer MoS 2.ACS Nano,4(5):2695–2700, (2010)

    2010

  52. [60]

    Molina-S´ anchez and L

    A. Molina-S´ anchez and L. Wirtz. Phonons in single-layer and few-layer MoS2 and WS2.Phys. Rev. B,84:155413, (2011)

    2011

  53. [61]

    Iqbal Bakti Utama, Junhao Lin, Xue Gong, Jun Zhang, Yanyuan Zhao, Sokrates T

    Xin Lu, M. Iqbal Bakti Utama, Junhao Lin, Xue Gong, Jun Zhang, Yanyuan Zhao, Sokrates T. Pantelides, Jingxian Wang, Zhili Dong, Zheng Liu, Wu Zhou, and Qihua Xiong. Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates.Nano Letters,14(5):2419–2425, (2014)

    2014

  54. [62]

    Large-area synthesis of highly crystalline WSe 2 monolayers and device applications.ACS Nano,8(1):923–930, (2014)

    Jing-Kai Huang, Jiang Pu, Chang-Lung Hsu, Ming-Hui Chiu, Zhen-Yu Juang, Yung-Huang Chang, Wen-Hao Chang, Yoshihiro Iwasa, Taishi Takenobu, and Lain-Jong Li. Large-area synthesis of highly crystalline WSe 2 monolayers and device applications.ACS Nano,8(1):923–930, (2014)

    2014

  55. [63]

    Binder, J

    J. Binder, J. Howarth, F. Withers, M. R. Molas, T. Taniguchi, K. Watanabe, C. Faugeras, A. Wys- molek, M. Danovich, V. I. Fal’ko, A. K. Geim, K. S. Novoselov, M. Potemski, and A. Kozikov. Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Wa...

    2019

  56. [64]

    Ultralow Auger-assisted interlayer exciton annihilation in WS2/WSe2 Moir´ e heterobilayers.Nano Letters,24(9):2773–2781, (2024)

    Cheng-Syuan Cai, Wei-Yan Lai, Po-Hsuan Liu, Tzu-Chieh Chou, Ro-Ya Liu, Chih-Ming Lin, Shangjr Gwo, and Wei-Ting Hsu. Ultralow Auger-assisted interlayer exciton annihilation in WS2/WSe2 Moir´ e heterobilayers.Nano Letters,24(9):2773–2781, (2024). 20

    2024

Pith tools

Reviewed August 12, 2026 · model on record in the stance chip above.