REVIEW 5 major objections 6 minor 70 references
Multi-functional Wafer-Scale Van der Waals Heterostructures and Polymorphs
T0 review · 5 major / 6 minor · reviewed 2026-08-10 · deepseek-v4-flash
Pith's one-line read This paper reports that replacing one atomic monolayer of WSe2 in a wafer-scale Bi2Se3/WSe2/Co stack changes the stack's THz nonlinear, spin, and magnetic response, with the 1T′ polymorph producing a two-fold emission symmetry and a…
desk verdict A solid wafer-scale vdW heterostructure paper with a genuinely new THz nonlinearity probe, but the central 1T' polymorphism claim in the 2-ML sample needs stronger independent structural confirmation before it fully lands. read the letter →
The pith
A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.
The reading
What carries the argument
The load-bearing mechanism is phase-resolved coherent THz emission spectroscopy combined with magnetic-field reversal. Recording the THz pulse at +B and −B and taking the sum $S^+(\mathrm{NL}) = [S(+B)+S(-B)]/2$ and difference $S^-(\mathrm{M}) = [S(+B)-S(-B)]/2$ separates the nonlinear current, which does not flip with the field, from the spintronic current, which does. On top of this, the paper uses polymorph-dependent second-order susceptibility formulas: $\chi_i^{(2)} = d_{26}\cos 3\phi$ for the 2H/3R phases and $\chi_i^{(2)} = d_{11}\cos^3\phi + (d_{12}+2d_{26})\cos\phi\sin^2\phi$ for 1T′ WSe2, with the total nonlinearity written $\chi_{\mathrm{total}}^{(2)} = \chi_i^{(2)} \pm \chi_c^{(2)}$, where $\chi_c^{(2)}$ is a magnetic, field-reversing component arising from proximity with Co. These symmetry formulas are what convert a measured azimuthal THz pattern into an identification of the WSe2 polymorph and of the magnetic proximity effect.
What would settle it
Grow the same WSe2(2 ML) film on Bi2Se3 but stop before depositing Co, and measure its polarization-resolved second-harmonic generation: if the bare film does not show a dominant two-fold nonlinear pattern matching the 1T′ formula, or if a film that lacks the faint RHEED (x2) reconstruction still shows the two-fold THz pattern in the full stack, the polymorph assignment and the subtraction that reveals it are wrong.
Extended reading notes
Core claim
The core discovery is that the simple exchange of one atomic monolayer of WSe2 inside a Bi2Se3/WSe2/Co stack changes the stack's optical, electrical, and magnetic response, and that the change can be read directly from phase-resolved terahertz emission. Decomposing the emitted THz field into a magnetic component (from spin-to-charge conversion) and a nonlinear component (from $\chi^{(2)}$ optical rectification) shows that 1, 3, and 4 monolayers of WSe2 give the six-fold azimuthal symmetry expected for 2H/3R stacking, while the 2-monolayer sample shows a clear two-fold pattern. The authors attribute this two-fold pattern to the 1T′ polymorph, whose even-layer form breaks inversion symmetry and is described by $\chi_i^{(2)} = d_{11}\cos^3\phi + (d_{12}+2d_{26})\cos\phi\sin^2\phi$. The magnetic component is isotropic for the pure TI and for 3–4 monolayer barriers, but for 1 and 2 monolayers it acquires a two-fold anisotropy with the opposite phase of the intrinsic nonlinearity; since WSe2 is not itself magnetic, the authors conclude this is a c-type magnetic nonlinearity induced by proximity to Co. This is presented as the first demonstration of these combined effects in large-area epitaxial heterostructures rather than in exfoliated stacks.
Load-bearing premise
The central attribution rests on two premises: that the Bi2Se3 nonlinear contribution in the two-monolayer stack is identical to its standalone six-fold form and simply subtracts, and that the faint RHEED (x2) lines plus the two-fold THz pattern uniquely identify the 1T′ polymorph rather than some other symmetry-breaking mechanism.
Editorial extensions
If this is right
- Wafer-scale epitaxial van der Waals stacks can support several functionalities simultaneously, so multifunctional devices do not have to rely on exfoliation and manual stacking.
- THz emission spectroscopy can act as a non-contact probe of monolayer parity and polymorph over macroscopic areas, distinguishing the two-fold 1T′ response from the six-fold 2H/3R response.
- Adding or removing a single WSe2 monolayer changes the symmetry of the emitted THz waveform, allowing layer thickness to program the nonlinear response of the stack.
- The two-fold magnetic nonlinearity of the 1T′/Co interface introduces a field-dependent THz contribution that is absent in higher-symmetry stacks, offering a magnetic handle on nonlinear emission.
- Because WSe2 acts as a spin barrier, increasing its thickness trades away spin-to-charge conversion amplitude while increasing the nonlinear contribution, a design constraint for future stacks.
Reading between the lines
- Inference: if the two-fold magnetic nonlinearity is genuinely proximity-induced, the same c-type signal should appear in other 1T′-TMD/ferromagnet pairs, and its phase should track the magnetization direction relative to the crystal axis; this can be checked in remanent magnetic states.
- Inference: the monolayer-level symmetry switch should also show up in transport-based spin-orbit torque or spin-pumping measurements on the same stacks, where 1T′ WSe2 would yield a low-symmetry angular dependence distinct from the isotropic TI response.
- Inference: the data imply a growth strategy for maximizing both nonlinear and spintronic output: multiple periods of Bi2Se3/WSe2/Co, or inversion of the stacking order to put the TMD above the ferromagnet, could combine large nonlinear volume with efficient spin injection.
Signed reviews
Editorial analysis
A structured set of objections, weighed in public.
Referee Report
Summary. The paper reports molecular beam epitaxy growth of wafer-scale Bi2Se3/WSe2/Co heterostructures with WSe2 thicknesses of 1-4 monolayers and uses phase-resolved terahertz emission spectroscopy to separate the emitted signal into nonlinear S+(NL) and magnetic S^{-}(M) components. The authors claim that the WSe2 polymorph—specifically a 1T' phase in the 2 ML sample—controls the symmetry of the nonlinear THz emission (six-fold for 2H/3R, two-fold for 1T'), that the WSe2 layer acts as a spin-transport barrier reducing spin-to-charge conversion, and that a proximity-induced magnetic nonlinearity appears in the 1 and 2 ML samples. Structural characterization includes RHEED, STEM, EDX, and Raman measurements.
Significance. If the polymorph-control claim is established, this is a valuable step toward scalable van der Waals heterostructures combining TI surface-state nonlinearities, TMD second-order nonlinearities, spin-to-charge conversion, and magnetic proximity effects in one wafer-scale stack. The strengths of the paper include the multi-technique structural characterization, the layer-thickness series from 0 to 4 ML, the phase-resolved S+/S^{-} decomposition, and the use of coherent THz emission to access the sign of nonlinear currents. However, the central claim that one monolayer of 1T' WSe2 determines the functional response currently rests on a single 2 ML sample whose 1T' assignment is not fully independent, and the magnetic-proximity interpretation lacks a non-magnetic control. These issues are load-bearing for the abstract's strongest claim.
major comments (5)
- [Section I and Section II (Figs. 2, 6, 7)] The polymorph attribution for the 2 ML sample is not independently established. In Section I, the only structural evidence for 1T' is described as "faint lines" in RHEED resembling a (2x1) reconstruction (Fig. 2(e,f)), while the two-fold S+(NL) pattern in Figs. 6(c) and 7 is then used to confirm the 1T' interpretation. Because the RHEED signature is weak and because no atomic-resolution STEM of the 2 ML stacking or quantitative domain-fraction analysis is provided, the two-fold pattern could equally arise from a WSe2-induced symmetry change of the Bi2Se3 surface-state response (strain, charge transfer, hybridization) rather than from an even-layer 1T' WSe2 polymorph. This is load-bearing for the paper's central claim; independent identification (quantitative RHEED line profiles, STEM of the 2 ML film, or phase-sensitive SHG/Raman on the WSe2 film before Co capping) is required.
- [Section II, Fig. 7] The extraction of the "WSe2-only" two-fold nonlinearity subtracts from the raw 2 ML data a cos(3φ) term attributed to Bi2Se3 (grey dashed curve in Fig. 7(a)). This assumes both that the Bi2Se3 contribution is unchanged when WSe2 is inserted and that the two nonlinearities add linearly. If the Bi2Se3/WSe2 interface modifies the TI surface states (for example via strain or charge transfer), the residual two-fold component is an artifact of that subtraction. The manuscript should provide a control experiment (for example, a sample in which WSe2 is replaced by a non-nonlinear spacer, or a 2 ML WSe2 film on a non-TI template) or a full angular fit with adjustable Bi2Se3 and WSe2 tensors and reported residuals.
- [Section II, Fig. 8] The anisotropic magnetic component obtained after subtracting the isotropic mean from S^{-}(M) for the 1 ML and 2 ML samples is attributed to a proximity-induced magnetic nonlinearity χc(2) of WSe2. No non-magnetic control is shown, and no demonstration is provided that this anisotropic component scales with the Co magnetization, reverses with applied field, or disappears when the ferromagnet is replaced by a non-magnetic metal. Without such a control, the same interface-modified TI contribution that could explain the nonlinear two-fold pattern could also leak into the S^{-}(M) channel through imperfect field reversal or magneto-optical effects, undermining the magnetic-proximity claim.
- [Section II, Figs. 3(c), 5-8] The quantitative trends that support the central claims (increase of S+(NL) with WSe2 thickness, decrease of S^{-}(M), and the two-fold symmetry of the 2 ML sample) are presented without error bars, repeated measurements, or statistical fits. In particular, the two-fold "fit" in Fig. 7 is not quantitatively compared with alternative angular dependencies (e.g., cos(2φ), cos(3φ), or a sum with an isotropic term), so its statistical significance is unclear. Adding measurement repeats and fit residuals with confidence intervals is necessary to support the monolayer-level control claim.
- [Abstract and Conclusions] The abstract's statement that the simple change of one atomic monolayer "entirely chang[es] its optical, electrical and magnetic properties" overstates the demonstrated scope. The reported experiments probe THz emission from optical nonlinearities and spin-to-charge conversion; they do not include direct electrical transport or magnetization measurements. The wording should be narrowed to the properties actually measured (THz nonlinear emission symmetry, spin-to-charge conversion efficiency, and inferred magnetic nonlinearity) or supported by additional transport and magnetometry data.
minor comments (6)
- [Introduction and Section I] There are several typos: "epitaxal" should be "epitaxial", "struture" should be "structure", "the the" appears in the Section II text, and "cos2(ϕ)" should be typeset as cos²φ.
- [Table I] The table's nonlinear and magnetic azimuthal curves are not defined in enough detail; the red/blue sign convention appears only in the Supp. Info. and should be stated in the caption.
- [Figure 8] Panels (b) and (c) are described as a comparison of 1 and 2 ML, but the panel labels are not visible in the caption; please label each panel with the corresponding WSe2 thickness.
- [Section I] The statement that the miscut axis was found at φ ≈ 150° by x-ray diffraction is not supported by any data or citation; provide the XRD measurement or a reference.
- [Section II, Fig. 7] The phrase "1T′ WSe2 likely grows in three domains, oriented every 120°" is an important assumption for the domain-orientation argument but is presented without a citation or quantitative evidence; it should be supported.
- [Eq. (2)] The tensor coefficients d11, d12, and d26 are not defined; please specify the coordinate frame and the components of d_ij they refer to, and check the index convention against the point group C_s.
Circularity Check
No circularity: the polymorph identification is anchored in independent RHEED evidence and external literature; THz symmetry is used as a consistency check, not as the phase identification.
full rationale
The derivation chain is not circular. The key polymorph assignment for the 2-ML WSe2 sample is anchored to RHEED patterns ('faint lines in-between the first order diffraction lines resembling a (x2) surface reconstruction', Fig. 2e,f), with the 1T' signature attributed via external references [50,53,54]. The two-fold THz pattern is then interpreted as a consequence of that independently assigned 1T' phase and as a probe of domain dominance, not as the evidence that the phase is 1T'. The S+(NL)/S-(M) decomposition in Eq. (6) is an algebraic sum/difference identity, not a fitted prediction. The Fig. 7 extraction of the WSe2-only contribution is an explicit modeling assumption that the Bi2Se3 cos(3φ) component is unchanged and adds linearly; this is a transparency/control limitation, not a circular step. The magnetic-component analysis subtracts a constant and compares the residual symmetry to the nonlinear one, which is an inference rather than a definitional reduction. Self-citations (e.g., Ref. [19] for the sum/difference method) are methodological and not load-bearing for the central claim. The main scientific risk, that an interface-modified Bi2Se3 surface could produce a two-fold residual, is an alternative-interpretation or control issue, not circularity, and does not meet the standard of exhibiting a specific reduction of a prediction to its inputs.
Assumptions & free parameters
free parameters (2)
- Bi2Se3 cos(3φ) amplitude in Fig. 7 subtraction =
not specified
- Isotropic mean subtracted from S-(M) in Fig. 8 =
not specified
assumptions (4)
- domain assumption Odd/even layer inversion symmetry rules for χ2 in 2H and 1T' TMDs.
- domain assumption Equation 6 decomposition: reversing the magnetic field flips only the sign of magnetic-origin THz contributions; nonlinear contributions are field-even.
- domain assumption The WSe2 spacer preserves the Bi2Se3 surface states and its nonlinear contribution and does not alter the TI response.
- ad hoc to paper 1T' WSe2 grows in a single dominant domain orientation due to the sapphire miscut.
Cite this review
Pith. "Pith review of Multi-functional Wafer-Scale Van der Waals Heterostructures and Polymorphs." pith.science (2026). https://pith.science/paper/LOZG7A66
@misc{pith2026250103955,
author = {Pith},
title = {Pith review of: Multi-functional Wafer-Scale Van der Waals Heterostructures and Polymorphs},
year = {2026},
howpublished = {\url{https://pith.science/paper/LOZG7A66}},
note = {Machine review of arXiv:2501.03955}
}
read the original abstract
Van der Waals heterostructures have promised the realisation of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconversion in spintronics and topological carrier protection, in a single layered device through an infinitely diverse set of quantum materials. However, most efforts have only focused on exfoliated material that inherently limits both the dimensions of the materials and the scalability for applications. Here, we show the epitaxial growth of large area heterostructures of topological insulators (Bi2Se3), transition metal dichalcogenides (TMDs, WSe2) and ferromagnets (Co), resulting in the combination of functionalities including tuneable optical nonlinearities, spin-to-charge conversion and magnetic proximity effects. This is demonstrated through coherent phase resolved terahertz currents, bringing novel functionalities beyond those achievable in simple homostructures. In particular, we show the role of different TMD polymorphs, with the simple change of one atomic monolayer of the artificial material stack entirely changing its optical, electrical and magnetic properties. This epitaxial integration of diverse two-dimensional materials offers foundational steps towards diverse perspectives in quantum material engineering, where the material polymorph can be controlled at technological relevant scales for coupling applications in, for example, van der Waals nonlinear optics, optoelectronics, spintronics, multiferroics and coherent current control.
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Figures from the paper (5 more)
Reference graph
Works this paper leans on
-
[1]
A. K. Geim and I. V. Grigorieva, Van der Waals heterostructures, Nature499, 419 (2013)
work page 2013
-
[2]
K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. C. Neto, 2D materials and van der Waals heterostructures, Science353, aac9439 (2016)
work page 2016
-
[3]
A. Castellanos-Gomez, X. Duan, Z. Fei, H. R. Gutierrez, Y. Huang, X. Huang, J. Quereda, Q. Qian, E. Sutter, and P. Sutter, Van der Waals heterostructures, Nature Reviews Methods Primers 2, 58 (2022)
work page 2022
-
[4]
H.-L. Hou, C. Anichini, P. Samorì, A. Criado, and M. Prato, 2D Van der Waals Heterostruc- tures for Chemical Sensing, Advanced Functional Materials32, 2207065 (2022)
work page 2022
-
[5]
P. Wang, C. Jia, Y. Huang, and X. Duan, Van der Waals Heterostructures by Design: From 1D and 2D to 3D, Matter4, 552 (2021)
work page 2021
-
[6]
Z. C. Wenzhuo Zhuang and X. Wang, Large-area fabrication of 2D layered topological semimetal films and emerging applications, Advances in Physics: X7, 2034529 (2022)
work page 2022
-
[7]
J. Li, X. Yang, Z. Zhang, W. Yang, X. Duan, and X. Duan, Towards the scalable synthesis of two-dimensional heterostructures and superlattices beyond exfoliation and restacking, Nature Materials 23, 1326 (2024)
work page 2024
-
[8]
G. Xue, B. Qin, C. Ma, P. Yin, C. Liu, and K. Liu, Large-Area Epitaxial Growth of Transition Metal Dichalcogenides, Chemical Reviews124, 9785 (2024), pMID: 39132950
work page 2024
Show all 70 references
-
[9]
J. E. Moore, The birth of topological insulators, Nature464, 194 (2010)
2010
-
[10]
Manzeli, D
S. Manzeli, D. Ovchinnikov, D. Pasquier, O. V. Yazyev, and A. Kis, 2D transition metal dichalcogenides, Nature Reviews Materials2, 17033 (2017)
2017
-
[11]
Bihlmayer, P
G. Bihlmayer, P. Noël, D. V. Vyalikh, E. V. Chulkov, and A. Manchon, Rashba-like physics in condensed matter, Nature Reviews Physics4, 642 (2022). 21
2022
-
[12]
M. Z. Hasan and C. L. Kane, Colloquium: Topological insulators, Rev. Mod. Phys.82, 3045 (2010)
2010
-
[13]
Zhang, Z
Q. Zhang, Z. Zhang, Z. Zhu, U. Schwingenschlögl, and Y. Cui, Exotic Topological Insulator States and Topological Phase Transitions in Sb2Se3–Bi2Se3 Heterostructures, ACS Nano6, 2345 (2012), pMID: 22339126
2012
-
[14]
Seifert, S
T. Seifert, S. Jaiswal, U. Martens, J. Hannegan, L. Braun, P. Maldonado, F. Freimuth, A. Kronenberg, J. Henrizi, I. Radu, E. Beaurepaire, Y. Mokrousov, P. M. Oppeneer, M. Jour- dan, G. Jakob, D. Turchinovich, L. M. Hayden, M. Wolf, M. Münzenberg, M. Kläui, and T. Kampfrath, Ef...
2016
-
[15]
T. G. Park, J. H. Jeon, S.-H. Chun, S. Lee, and F. Rotermund, Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2, Communications Physics5, 182 (2022)
2022
-
[16]
X. Wang, L. Cheng, D. Zhu, Y. Wu, M. Chen, Y. Wang, D. Zhao, C. B. Boothroyd, Y. M. Lam, J.-X. Zhu, M. Battiato, J. C. W. Song, H. Yang, and E. E. M. Chia, Ultrafast Spin- to-Charge Conversion at the Surface of Topological Insulator Thin Films, Advanced Materials 30, 1802356 (2018)
2018
-
[17]
M. Tong, Y. Hu, Z. Wang, T. Zhou, X. Xie, X. Cheng, and T. Jiang, Enhanced Terahertz Radiation by Efficient Spin-to-Charge Conversion in Rashba-Mediated Dirac Surface States, Nano Letters , acs.nanolett.0c03079 (2020)
2020
-
[18]
Rongione, L
E. Rongione, L. Baringthon, D. She, G. Patriarche, R. Lebrun, A. Lemaître, M. Morassi, N. Reyren, M. Mičica, J. Mangeney, J. Tignon, F. Bertran, S. Dhillon, P. Le Févre, H. Jaffrès, andJ.-M.George,Spin-MomentumLockingandUltrafastSpin-ChargeConversioninUltrathin Epitaxial Bi1−x...
2023
-
[19]
Mičica, J
E.Rongione, S.Fragkos, L.Baringthon, J.Hawecker, E.Xenogiannopoulou, P.Tsipas, C.Song, M. Mičica, J. Mangeney, J. Tignon, T. Boulier, N. Reyren, R. Lebrun, J. George, P. Le Fèvre, S. Dhillon, A. Dimoulas, and H. Jaffrès, Ultrafast Spin-Charge Conversion at SnBi2Te4/Co Topologi...
2022
-
[20]
Abdukayumov, M
K. Abdukayumov, M. Mičica, F. Ibrahim, L. Vojáček, C. Vergnaud, A. Marty, J.-Y. Veuillen, P. Mallet, I. G. de Moraes, D. Dosenovic, S. Gambarelli, V. Maurel, A. Wright, J. Tignon, 22 J. Mangeney, A. Ouerghi, V. Renard, F. Mesple, J. Li, F. Bonell, H. Okuno, M. Chshiev, J.-M. G...
2024
-
[21]
Huang, M
B. Huang, M. A. McGuire, A. F. May, D. Xiao, P. Jarillo-Herrero, and X. Xu, Emergent phenomena and proximity effects in two-dimensional magnets and heterostructures, Nature Materials 19, 1276 (2020)
2020
-
[22]
C. Lee, F. Katmis, P. Jarillo-Herrero, J. S. Moodera, and N. Gedik, Direct measurement of proximity-induced magnetism at the interface between a topological insulator and a ferromag- net, Nature Communications7, 12014 (2016)
2016
-
[23]
Ribeiro-Soares, C
J. Ribeiro-Soares, C. Janisch, Z. Liu, A. L. Elías, M. S. Dresselhaus, M. Terrones, L. G. Cançado, and A. Jorio, Second Harmonic Generation in WSe2, 2D Materials2, 045015 (2015)
2015
-
[24]
G. Wang, X. Marie, I. Gerber, T. Amand, D. Lagarde, L. Bouet, M. Vidal, A. Balocchi, and B. Urbaszek, Giant Enhancement of the Optical Second-Harmonic Emission of WSe2 Monolayers by Laser Excitation at Exciton Resonances, Phys. Rev. Lett.114, 097403 (2015)
2015
-
[25]
J. K. Day, M.-H. Chung, Y.-H. Lee, and V. M. Menon, Microcavity enhanced second harmonic generation in 2D MoS2, Opt. Mater. Express6, 2360 (2016)
2016
-
[26]
H. Chen, V. Corboliou, A. S. Solntsev, D.-Y. Choi, M. A. Vincenti, D. de Ceglia, C. de Angelis, Y. Lu, and D. N. Neshev, Enhanced second-harmonic generation from two-dimensional MoSe2 on a silicon waveguide, Light: Science & Applications6, e17060 (2017)
2017
-
[27]
M. C. Lucking, K. Beach, and H. Terrones, Large second harmonic generation in alloyed TMDs and boron nitride nanostructures, Scientific Reports8, 10118 (2018)
2018
-
[28]
Shi, Y.-Q
J. Shi, Y.-Q. Bie, A. Zong, S. Fang, W. Chen, J. Han, Z. Cao, Y. Zhang, T. Taniguchi, K. Watanabe, X. Fu, V. Bulović, E. Kaxiras, E. Baldini, P. Jarillo-Herrero, and K. A. Nelson, Intrinsic 1T′ phase induced in atomically thin 2H-MoTe2 by a single terahertz pulse, Nature Commu...
2023
-
[29]
Küçüköz, B
B. Küçüköz, B. Munkhbat, and T. O. Shegai, Boosting Second-Harmonic Generation in Mono- layer Rhenium Disulfide by Reversible Laser Patterning, ACS Photonics9, 518 (2022)
2022
-
[30]
B. Qin, C. Ma, Q. Guo, X. Li, W. Wei, C. Ma, Q. Wang, F. Liu, M. Zhao, G. Xue, J. Qi, M. Wu, H. Hong, L. Du, Q. Zhao, P. Gao, X. Wang, E. Wang, G. Zhang, C. Liu, and K. Liu, Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals, 23 Scie...
2024
-
[31]
Hemmat, S
M. Hemmat, S. Ayari, M. Mičica, H. Vergnet, S. Guo, M. Arfaoui, X. Yu, D. Vala, A. Wright, K. Postava, J. Mangeney, F. Carosella, S. Jaziri, Q. J. Wang, Z. Liu, J. Tignon, R. Fer- reira, E. Baudin, and S. Dhillon, Layer-controlled nonlinear terahertz valleytronics in two- dime...
2023
-
[32]
Huang, L
Y. Huang, L. Zhu, Q. Zhao, Y. Guo, Z. Ren, J. Bai, and X. Xu, Surface Optical Rectifica- tion from Layered MoS2 Crystal by THz Time-Domain Surface Emission Spectroscopy, ACS Applied Materials & Interfaces9, 4956 (2017), publisher: American Chemical Society
2017
-
[33]
Pettine, P
J. Pettine, P. Padmanabhan, N. Sirica, R. P. Prasankumar, A. J. Taylor, and H.-T. Chen, Ultrafast terahertz emission from emerging symmetry-broken materials, Light: Science & Ap- plications 12, 133 (2023)
2023
-
[34]
J. Yang, S. Jiang, J. Xie, H. Jiang, S. Xu, K. Zhang, Y. Shi, Y. Zhang, Z. Zeng, G. Fang, T. Wang, and F. Su, Identifying the Intermediate Free-Carrier Dynamics Across the Charge Separation in Monolayer MoS2/ReSe2 Heterostructures, ACS Nano15, 16760 (2021), pMID: 34549939
2021
-
[35]
C. J. Docherty, P. Parkinson, H. J. Joyce, M.-H. Chiu, C.-H. Chen, M.-Y. Lee, L.-J. Li, L. M. Herz, and M. B. Johnston, Ultrafast Transient Terahertz Conductivity of Monolayer MoS2 and WSe2 Grown by Chemical Vapor Deposition, ACS Nano8, 11147 (2014), pMID: 25347405
2014
-
[36]
X. Yu, P. Yu, D. Wu, B. Singh, Q. Zeng, H. Lin, W. Zhou, J. Lin, K. Suenaga, Z. Liu, and Q. J. Wang, Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor, Nature Communications9, 1545 (2018)
2018
-
[37]
S. Zhu, R. Duan, W. Chen, F. Wang, J. Han, X. Xu, L. Wu, M. Ye, F. Sun, S. Han, X. Zhao, C. S. Tan, H. Liang, Z. Liu, and Q. J. Wang, Ultrastrong Optical Harmonic Generations in Layered Platinum Disulfide in the Mid-Infrared, ACS Nano17, 2148 (2023), publisher: American Chemic...
2023
-
[38]
Yoshikawa, K
N. Yoshikawa, K. Nagai, K. Uchida, Y. Takaguchi, S. Sasaki, Y. Miyata, and K. Tanaka, Interband resonant high-harmonic generation by valley polarized electron–hole pairs, Nature Communications 10, 3709 (2019)
2019
-
[39]
Galceran, F
R. Galceran, F. Bonell, L. Camosi, G. Sauthier, Z. M. Gebeyehu, M. J. Esplandiu, A. Arrighi, I. Fernández Aguirre, A. I. Figueroa, J. F. Sierra, and S. O. Valenzuela, Passivation of Bi2Te3 Topological Insulator by Transferred CVD-Graphene: Toward Intermixing-Free Interfaces, A...
2022
-
[40]
R. Sun, S. Yang, X. Yang, E. Vetter, D. Sun, N. Li, L. Su, Y. Li, Y. Li, Z.-z. Gong, Z.-k. Xie, K.-y. Hou, Q. Gul, W. He, X.-q. Zhang, and Z.-h. Cheng, Large Tunable Spin-to-Charge Conversion Induced by Hybrid Rashba and Dirac Surface States in Topological Insulator Het- erost...
2019
-
[41]
Hawecker, T.-H
J. Hawecker, T.-H. Dang, E. Rongione, J. Boust, S. Collin, J.-M. George, H.-J. Drouhin, Y. Laplace, R. Grasset, J. Dong, J. Mangeney, J. Tignon, H. Jaffrès, L. Perfetti, and S. Dhillon, Spin Injection Efficiency at Metallic Interfaces Probed by THz Emission Spectroscopy, Ad- v...
2021
-
[42]
J. H. Kim, H. Sung, and G.-H. Lee, Phase Engineering of Two-Dimensional Transition Metal Dichalcogenides, Small Science4, 2300093 (2024)
2024
-
[43]
Z. Zeng, X. Sun, D. Zhang, W. Zheng, X. Fan, M. He, T. Xu, L. Sun, X. Wang, and A. Pan, Controlled Vapor Growth and Nonlinear Optical Applications of Large-Area 3R Phase WS2 and WSe2 Atomic Layers, Advanced Functional Materials29, 1806874 (2019), publisher: John Wiley & Sons, Ltd
2019
-
[44]
Beams, L
R. Beams, L. G. Cançado, S. Krylyuk, I. Kalish, B. Kalanyan, A. K. Singh, K. Choudhary, A. Bruma, P. M. Vora, F. Tavazza, A. V. Davydov, and S. J. Stranick, Characterization of Few-Layer 1T′ MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering, ACS Na...
2016
-
[45]
D. Hou, Z. Jiang, R. Xiao, C. Liu, X. Chang, Y. Liu, Z. Wang, B. Li, X. Liu, X. Hu, W. Ding, J. Hu, X. Luo, Y. Sun, and Z. Sheng, Extraordinary Magnetic Second Harmonic Generation in Monolayer CrPS4, Advanced Optical Materials , 2400943 (2024)
2024
-
[46]
S.Toyoda, M.Fiebig, T.hisaArima, Y.Tokura,andN.Ogawa,Nonreciprocalsecondharmonic generation in a magnetoelectric material, Science Advances7, eabe2793 (2021)
2021
-
[47]
P.-C. Yeh, W. Jin, N. Zaki, D. Zhang, J. T. Liou, J. T. Sadowski, A. Al-Mahboob, J. I. Dadap, I. P. Herman, P. Sutter, and R. M. Osgood, Layer-dependent electronic structure of an atomically heavy two-dimensional dichalcogenide, Physical Review B91, 041407 (2015)
2015
-
[48]
Ramasubramaniam, Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides, Phys
A. Ramasubramaniam, Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides, Phys. Rev. B86, 115409 (2012)
2012
-
[49]
J. He, K. Hummer, and C. Franchini, Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides MoS2, MoSe2, WS2, and WSe2, Phys. Rev. B89, 25 075409 (2014)
2014
-
[50]
P. Chen, W. W. Pai, Y.-H. Chan, W.-L. Sun, C.-Z. Xu, D.-S. Lin, M. Y. Chou, A.-V. Fedorov, and T.-C. Chiang, Large quantum-spin-Hall gap in single-layer 1T′ WSe2, Nature Communi- cations 9, 2003 (2018)
2018
-
[51]
M. M. Ugeda, A. Pulkin, S. Tang, H. Ryu, Q. Wu, Y. Zhang, D. Wong, Z. Pedramrazi, A. Martín-Recio, Y. Chen, F. Wang, Z.-X. Shen, S.-K. Mo, O. V. Yazyev, and M. F. Crommie, Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2, Natur...
2018
-
[52]
Wan, J.-H
Y. Wan, J.-H. Fu, C.-P. Chuu, V. Tung, Y. Shi, and L.-J. Li, Wafer-scale single-orientation 2d layers by atomic edge-guided epitaxial growth, Chem. Soc. Rev.51, 803 (2022)
2022
-
[53]
S.Tang, C.Zhang, D.Wong, Z.Pedramrazi, H.-Z.Tsai, C.Jia, B.Moritz, M.Claassen, H.Ryu, S. Kahn, J. Jiang, H. Yan, M. Hashimoto, D. Lu, R. G. Moore, C.-C. Hwang, C. Hwang, Z. Hussain, Y. Chen, M. M. Ugeda, Z. Liu, X. Xie, T. P. Devereaux, M. F. Crommie, S.-K. Mo, and Z.-X. Shen,...
2017
-
[54]
W. Chen, X. Xie, J. Zong, T. Chen, D. Lin, F. Yu, S. Jin, L. Zhou, J. Zou, J. Sun, X. Xi, and Y. Zhang, Growth and Thermo-driven Crystalline Phase Transition of Metastable Monolayer 1T′-WSe2 Thin Film, Scientific Reports9, 2685 (2019)
2019
-
[55]
W. Zhao, Z. Ghorannevis, K. K. Amara, J. R. Pang, M. Toh, X. Zhang, C. Kloc, P. H. Tan, and G. Eda, Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2, Nanoscale5, 9677 (2013)
2013
-
[56]
T. H. Dang, J. Hawecker, E. Rongione, G. Baez Flores, D. Q. To, J. C. Rojas-Sanchez, H. Nong, J. Mangeney, J. Tignon, F. Godel, S. Collin, P. Seneor, M. Bibes, A. Fert, M. Anane, J.-M. George, L. Vila, M. Cosset-Cheneau, D. Dolfi, R. Lebrun, P. Bortolotti, K. Belashchenko, S. ...
2020
-
[57]
C. Zhou, Y. P. Liu, Z. Wang, S. J. Ma, M. W. Jia, R. Q. Wu, L. Zhou, W. Zhang, M. K. Liu, Y. Z. Wu, and J. Qi, Broadband Terahertz Generation via the Interface Inverse Rashba- Edelstein Effect, Phys. Rev. Lett.121, 086801 (2018)
2018
-
[58]
Wu, Efficient Generation and Arbitrary Manipulation of Chiral Terahertz Waves Emitted 26 from Bi2Te3-Fe Heterostructures, Advanced Photonics Research2, 2000099 (2021)
X.Chen, H.Wang, C.Wang, C.Ouyang, G.Wei, T.Nie, W.Zhao, J.Miao, Y.Li, L.Wang,and X. Wu, Efficient Generation and Arbitrary Manipulation of Chiral Terahertz Waves Emitted 26 from Bi2Te3-Fe Heterostructures, Advanced Photonics Research2, 2000099 (2021)
2021
-
[59]
Cheng, X
L. Cheng, X. Wang, W. Yang, J. Chai, M. Yang, M. Chen, Y. Wu, X. Chen, D. Chi, K. E. J. Goh, J.-X. Zhu, H. Sun, S. Wang, J. C. W. Song, M. Battiato, H. Yang, and E. E. M. Chia, Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2, Natu...
2019
-
[60]
Hsieh, J
D. Hsieh, J. W. McIver, D. H. Torchinsky, D. R. Gardner, Y. S. Lee, and N. Gedik, Nonlinear optical probe of tunable surface electrons on a topological insulator, Phys. Rev. Lett.106, 057401 (2011)
2011
-
[61]
H. G. Rosa, Y. W. Ho, I. Verzhbitskiy, M. J. F. L. Rodrigues, T. Taniguchi, K. Watan- abe, G. Eda, V. M. Pereira, and J. C. V. Gomes, Characterization of the second- and third- harmonic optical susceptibilities of atomically thin tungsten diselenide, Scientific Reports8, 10035 (2018)
2018
-
[62]
Y. Song, S. Hu, M.-L. Lin, X. Gan, P.-H. Tan, and J. Zhao, Extraordinary Second Harmonic Generation in ReS2 Atomic Crystals, ACS Photonics 5, 3485 (2018), publisher: American Chemical Society
2018
-
[63]
Zhang, P
W. Zhang, P. Maldonado, Z. Jin, T. S. Seifert, J. Arabski, G. Schmerber, E. Beaurepaire, M. Bonn, T. Kampfrath, P. M. Oppeneer, and D. Turchinovich, Ultrafast terahertz magne- tometry, Nature Communications11, 4247 (2020)
2020
-
[64]
C. S. Tang, X. Yin, and A. T. S. Wee, 1D chain structure in 1T′-phase 2D transition metal dichalcogenides and their anisotropic electronic structures, Applied Physics Reviews8, 011313 (2021)
2021
-
[65]
P. Li, W. Wu, Y. Wen, C. Zhang, J. Zhang, S. Zhang, Z. Yu, S. A. Yang, A. Manchon, and X.-x. Zhang, Spin-momentum locking and spin-orbit torques in magnetic nano-heterojunctions composed of Weyl semimetal WTe2, Nature Communications9, 3990 (2018)
2018
-
[66]
MacNeill, G
D. MacNeill, G. M. Stiehl, M. H. D. Guimaraes, R. A. Buhrman, J. Park, and D. C. Ralph, Control of spin–orbit torques through crystal symmetry in WTe2/ferromagnet bilayers, Nature Physics 13, 300 (2017)
2017
-
[67]
B. Zhao, D. Khokhriakov, Y. Zhang, H. Fu, B. Karpiak, A. M. Hoque, X. Xu, Y. Jiang, B. Yan, and S. P. Dash, Observation of charge to spin conversion in Weyl semimetal WTe2 at room temperature, Phys. Rev. Res.2, 013286 (2020). 27
2020
-
[68]
C. K. Safeer, N. Ontoso, J. Ingla-Aynés, F. Herling, V. T. Pham, A. Kurzmann, K. En- sslin, A. Chuvilin, I. Robredo, M. G. Vergniory, F. de Juan, L. E. Hueso, M. R. Calvo, and F. Casanova, Large Multidirectional Spin-to-Charge Conversion in Low-Symmetry Semimetal MoTe2 at Room...
2019
-
[69]
X. Chen, X. Zhang, and G. Xiang, Recent advances in two-dimensional intrinsic ferromagnetic materials Fe3X(X=Ge and Ga)Te2 and their heterostructures for spintronics, Nanoscale16, 527 (2024), publisher: The Royal Society of Chemistry
2024
-
[70]
Guillet, L
Q. Guillet, L. Vojáček, D. Dosenovic, F. Ibrahim, H. Boukari, J. Li, F. Choueikani, P. Ohresser, A. Ouerghi, F. Mesple, V. Renard, J.-F. m. c. Jacquot, D. Jalabert, H. Okuno, M. Chshiev, C. Vergnaud, F. Bonell, A. Marty, and M. Jamet, Epitaxial van der Waals heterostructures o...
2023
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