pith. sign in

arxiv: 2503.02564 · v4 · pith:T22BWU2Unew · submitted 2025-03-04 · ❄️ cond-mat.mes-hall · cond-mat.mtrl-sci

Influence of excitation energy on microscopic quantum pathways for ultrafast charge transfer in van der Waals heterostructures

Pith reviewed 2026-05-23 01:27 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall cond-mat.mtrl-sci
keywords charge transfervan der Waals heterostructuresultrafast dynamicstrARPESWS2-grapheneexcitonscharge separationcarrier temperature
0
0 comments X

The pith

Higher excitation energies accelerate charge separation in WS2-graphene heterostructures by opening an extra hole-transfer channel.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper investigates how the photon energy used to excite a WS2-graphene van der Waals heterostructure controls the speed of ultrafast interlayer charge transfer. Using time- and angle-resolved photoemission spectroscopy, the authors compare selective excitation at the A-exciton resonance near the K-point with excitation at the C-exciton resonance near the Q-point. Charge separation occurs faster at the higher C-exciton energy. This acceleration is traced to populations created well above the direct band gap, which raise carrier temperatures and thereby activate an additional efficient transfer route for holes in the WS2 valence band. The result shows that microscopic quantum pathways can be steered by choice of excitation energy.

Core claim

Selective excitation of electron-hole pairs at the K-point versus near the Q-point of WS2 reveals faster interlayer hole transfer for C-exciton resonance. Absorption at higher photon energies places carriers well above the band gap, producing elevated temperatures that open a highly efficient charge-transfer channel for holes from the WS2 valence band and accelerate overall charge separation.

What carries the argument

Time- and angle-resolved photoemission spectroscopy (trARPES) that resolves carrier populations in specific charge-transfer states at different momenta after A-exciton versus C-exciton excitation.

If this is right

  • Charge separation speed becomes tunable by selecting pump energy to access different exciton resonances.
  • Elevated carrier temperature from above-gap excitation supplies a distinct, efficient hole-transfer route.
  • Momentum-selective excitation can steer carriers through particular delocalized charge-transfer states.
  • The same energy dependence should apply to light-harvesting performance in other vdW heterostructures.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Device architectures could incorporate wavelength-tunable sources to favor the faster transfer regime.
  • Thermal management of the heterostructure might further modulate the efficiency of the additional channel.
  • The mechanism may operate in other TMD-graphene stacks whose band structures allow multiple transfer momenta.
  • Similar temperature-gated pathways could appear in ultrafast processes beyond charge transfer, such as exciton dissociation.

Load-bearing premise

The difference in observed charge-transfer speed arises specifically from the temperature-enabled extra hole channel rather than from differences in initial carrier distributions or momentum-dependent scattering.

What would settle it

A trARPES measurement in which carrier temperature remains identical for both excitations yet the higher-energy case still shows faster transfer would falsify the claimed mechanism.

Figures

Figures reproduced from arXiv: 2503.02564 by Camilla Coletti, Isabella Gierz, Johannes Gradl, Leonard Weigl, Niklas Hofmann, Stiven Forti.

Figure 1
Figure 1. Figure 1: FIG. 1 [PITH_FULL_IMAGE:figures/full_fig_p012_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2 [PITH_FULL_IMAGE:figures/full_fig_p013_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3 [PITH_FULL_IMAGE:figures/full_fig_p014_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4 [PITH_FULL_IMAGE:figures/full_fig_p015_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5 [PITH_FULL_IMAGE:figures/full_fig_p015_5.png] view at source ↗
read the original abstract

Efficient charge separation in van der Waals (vdW) heterostructures is crucial for optimizing light harvesting and detection applications. However, precise control over the microscopic pathways governing ultrafast charge transfer remains an open challenge. These pathways are intrinsically linked to charge transfer states with strongly delocalized wave functions that appear at various momenta in the Brillouin zone. Here, we use time- and angle-resolved photoemission spectroscopy (trARPES) to investigate the possibility of steering carriers through specific charge transfer states in a prototypical WS\textsubscript{2}-graphene heterostructure. By selectively exciting electron-hole pairs at the K-point (A-exciton resonance) and close to the Q-point (C-exciton resonance) of WS\textsubscript{2} with different pump photon energies, we find that charge separation is faster at higher excitation energies. This behavior is attributed to the fact that absorption at the C-exciton resonance generates electron-hole populations at energies well above the direct band gap. The resulting elevated carrier temperatures open an additional, highly efficient charge-transfer channel for holes in the WS\textsubscript{2} valence band, leading to an overall acceleration of interlayer hole transfer for C-exciton excitation. The microscopic insights gained in this work can be leveraged to optimize the performance of vdW heterostructures in optoelectronic devices.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

1 major / 0 minor

Summary. The manuscript uses time- and angle-resolved photoemission spectroscopy (trARPES) on a WS2-graphene van der Waals heterostructure to compare interlayer charge separation dynamics following selective excitation at the A-exciton resonance (K-point, lower photon energy) versus the C-exciton resonance (near Q-point, higher photon energy). It reports faster charge separation for C-exciton excitation and attributes this to above-gap excitation producing elevated carrier temperatures that open an additional efficient hole-transfer channel from the WS2 valence band.

Significance. If the attribution to a temperature-enabled additional channel is substantiated with direct evidence, the work would provide momentum-resolved experimental insight into how excitation energy can steer microscopic charge-transfer pathways in 2D heterostructures, with relevance to optimizing optoelectronic performance in vdW devices.

major comments (1)
  1. [Abstract] Abstract: the central attribution of the observed acceleration in interlayer hole transfer to elevated carrier temperatures opening an additional valence-band channel is not supported by any reported extraction of carrier temperatures, explicit population dynamics showing the additional channel, or a control that holds initial energy/momentum distribution fixed while varying temperature. This leaves open the possibility that differences in initial K-point versus near-Q distributions (or momentum-dependent scattering) dominate the rate difference.

Simulated Author's Rebuttal

1 responses · 1 unresolved

We thank the referee for their careful reading of the manuscript and for highlighting the need for stronger support of the central attribution. We address the major comment below.

read point-by-point responses
  1. Referee: [Abstract] Abstract: the central attribution of the observed acceleration in interlayer hole transfer to elevated carrier temperatures opening an additional valence-band channel is not supported by any reported extraction of carrier temperatures, explicit population dynamics showing the additional channel, or a control that holds initial energy/momentum distribution fixed while varying temperature. This leaves open the possibility that differences in initial K-point versus near-Q distributions (or momentum-dependent scattering) dominate the rate difference.

    Authors: We agree that the abstract does not contain explicit carrier-temperature values or a dedicated control experiment. The full manuscript presents momentum-resolved trARPES data comparing the two excitation conditions, with the C-exciton case showing both higher initial excess energy and faster subsequent hole transfer from the WS2 valence band. In revision we will add Fermi-Dirac fits to the photoemission intensity distributions to extract and report carrier temperatures for both resonances, together with a supplementary figure showing the additional high-energy hole population that appears only under C-exciton excitation. We maintain that the observed acceleration cannot be explained solely by the difference in initial K versus near-Q distributions, because the interlayer transfer rates are extracted at the same final momenta in graphene for both cases; momentum-dependent scattering within WS2 would not produce the measured difference in interlayer hole-decay time constants. A control that independently varies temperature while freezing the initial energy-momentum distribution is not experimentally accessible in the present setup and is therefore not provided. revision: partial

standing simulated objections not resolved
  • A control experiment that holds the initial energy and momentum distribution fixed while independently varying carrier temperature

Circularity Check

0 steps flagged

No circularity: purely experimental trARPES observations with interpretive attribution only

full rationale

The manuscript is an experimental report of time- and angle-resolved photoemission spectroscopy measurements on WS2-graphene. It compares charge-transfer dynamics for A-exciton (K-point) versus C-exciton (near-Q) excitation and offers an interpretive attribution to elevated carrier temperatures enabling an extra hole-transfer channel. No equations, fitted parameters, derivations, or self-citations are present that could reduce any claimed result to its inputs by construction. The attribution is a post-hoc physical interpretation of the measured rate difference, not a mathematical step that is forced by definition or prior self-citation. The paper is therefore self-contained against external benchmarks with score 0.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

Experimental paper; central claim rests on trARPES measurements rather than free parameters, axioms, or invented entities.

pith-pipeline@v0.9.0 · 5796 in / 1271 out tokens · 50235 ms · 2026-05-23T01:27:53.390331+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

36 extracted references · 36 canonical work pages · 7 internal anchors

  1. [1]

    A. K. Geim and I. V. Grigorieva, Van der Waals heterostructures, Nature 499, 419 (2013), arXiv:1307.6718

  2. [2]

    K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, 2D materials and van der Waals heterostructures, Science 353, 10.1126/science.aac9439 (2016)

  3. [3]

    C. Jin, E. Y. Ma, O. Karni, E. C. Regan, F. Wang, and T. F. Heinz, Ultrafast dynamics in van der Waals heterostructures, Nature Nanotechnology 13, 994 (2018)

  4. [4]

    J. He, N. Kumar, M. Z. Bellus, H. Y. Chiu, D. He, Y. Wang, and H. Zhao, Electron transfer and coupling in graphene-tungsten disulfide van der Waals heterostructures, Nature Commu- nications 5, 10.1038/ncomms6622 (2014)

  5. [5]

    Picosecond photoresponse in van der Waals heterostructures

    M. Massicotte, P. Schmidt, F. Vialla, K. G. Sch¨ adler, A. Reserbat-Plantey, K. Watanabe, T. Taniguchi, K. J. Tielrooij, and F. H. Koppens, Picosecond photoresponse in van der Waals heterostructures, Nature Nanotechnology 11, 42 (2016), arXiv:1507.06251

  6. [6]

    J. He, D. He, Y. Wang, and H. Zhao, Probing effect of electric field on photocarrier transfer in graphene-WS2 van der Waals heterostructures, Optics Express 25, 1949 (2017)

  7. [7]

    Z. Ji, H. Hong, J. Zhang, Q. Zhang, W. Huang, T. Cao, R. Qiao, C. Liu, J. Liang, C. Jin, L. Jiao, K. Shi, S. Meng, and K. Liu, Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers, ACS Nano 11, 12020 (2017)

  8. [8]

    Z. Song, H. Zhu, W. Shi, D. Sun, and S. Ruan, Ultrafast charge transfer in graphene-WS2 Van der Waals heterostructures, Optik 174, 62 (2018)

  9. [9]

    L. Yuan, T. F. Chung, A. Kuc, Y. Wan, Y. Xu, Y. P. Chen, T. Heine, and L. Huang, Photocar- rier generation from interlayer charge-transfer transitions in WS2-graphene heterostructures, Science Advances 4, 1 (2018)

  10. [10]

    S. Fu, I. du Foss´ e, X. Jia, J. Xu, X. Yu, H. Zhang, W. Zheng, S. Krasel, Z. Chen, Z. M. Wang, K. J. Tielrooij, M. Bonn, A. J. Houtepen, and H. I. Wang, Long-lived charge separation follow- ing pump-wavelength–dependent ultrafast charge transfer in graphene/WS2 heterostructures, Science Advances 7, 1 (2021), arXiv:2007.08932

  11. [11]

    Zheng, W

    Q. Zheng, W. A. Saidi, Y. Xie, Z. Lan, O. V. Prezhdo, H. Petek, and J. Zhao, Phonon-Assisted Ultrafast Charge Transfer at van der Waals Heterostructure Interface, Nano Letters 17, 6435 8 (2017)

  12. [12]

    J. Liu, X. Zhang, and G. Lu, Auger Processes and Excited State Dynamics in WS2/Graphene Heterostructures: A First-Principles Perspective, Journal of Physical Chemistry Letters 13, 7371 (2022)

  13. [13]

    Hofmann, L

    N. Hofmann, L. Weigl, J. Gradl, N. Mishra, G. Orlandini, S. Forti, C. Coletti, S. Latini, L. Xian, A. Rubio, D. Perez Paredes, R. Perea Causin, S. Brem, E. Malic, and I. Gierz, Link between interlayer hybridization and ultrafast charge transfer in WS2-graphene heterostruc- tures, 2D Materials 10, 035025 (2023)

  14. [14]

    H. Wang, J. Bang, Y. Sun, L. Liang, D. West, V. Meunier, and S. Zhang, The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures, Nature Communi- cations 7, 11504 (2016)

  15. [15]

    Long and O

    R. Long and O. V. Prezhdo, Quantum Coherence Facilitates Efficient Charge Separation at a MoS2/MoSe2 van der Waals Junction, Nano Letters 16, 1996 (2016)

  16. [16]

    L. Li, R. Long, and O. V. Prezhdo, Charge Separation and Recombination in Two-Dimensional MoS2/WS2: Time-Domain ab Initio Modeling, Chemistry of Materials 29, 2466 (2017)

  17. [17]

    Y. Liu, J. Zhang, S. Meng, C. Yam, and T. Frauenheim, Electric Field Tunable Ultrafast Interlayer Charge Transfer in Graphene/WS2Heterostructure, Nano Letters 21, 4403 (2021)

  18. [18]

    Krause, S

    R. Krause, S. Aeschlimann, M. Ch, M. Chavez-Cervantes, R. Perea-Causin, S. Brem, E. Malic, S. Forti, F. Fabbri, C. Coletti, and I. Gierz, Microscopic understanding of ultrafast charge transfer in van-der-Waals heterostructures, Physical Review Letters 127, 276401 (2021), arXiv:2012.09268

  19. [19]

    Hofmann, A

    N. Hofmann, A. Steinhoff, R. Krause, N. Mishra, G. Orlandini, S. Forti, C. Coletti, T. O. Wehling, and I. Gierz, k-Resolved Ultrafast Light-Induced Band Renormalization in Monolayer WS2 on Graphene, Nano Letters 25, 1214 (2025)

  20. [20]

    Riedl, C

    C. Riedl, C. Coletti, T. Iwasaki, A. A. Zakharov, and U. Starke, Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation, Physical Review Letters 103, 1 (2009)

  21. [21]

    Rossi, H

    A. Rossi, H. B¨ uch, C. Di Rienzo, V. Miseikis, D. Convertino, A. Al-Temimy, V. Voliani, M. Gemmi, V. Piazza, and C. Coletti, Scalable synthesis of WS2 on graphene and h-BN: An all-2D platform for light-matter transduction, 2D Materials 3, 10.1088/2053-1583/3/3/031013 (2016). 9

  22. [22]

    Forti, A

    S. Forti, A. Rossi, H. B¨ uch, T. Cavallucci, F. Bisio, A. Sala, T. O. Mente¸ s, A. Locatelli, M. Magnozzi, M. Canepa, K. M¨ uller, S. Link, U. Starke, V. Tozzini, and C. Coletti, Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide, Nanoscale 9, 16412 (2017)

  23. [23]

    H. Zeng, G. B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides, Scientific Reports 3, 1608 (2013), arXiv:1208.5864

  24. [24]

    P. R. Wallace, The Band Theory of Graphite, Doboku Gakkai Ronbunshuu A 71, 622 (1947)

  25. [25]

    Direct evidence for efficient ultrafast charge separation in epitaxial WS$_2$/graphene heterostructure

    S. Aeschlimann, A. Rossi, M. Ch´ avez-Cervantes, R. Krause, B. Arnoldi, B. Stadtm¨ uller, M. Aeschlimann, S. Forti, F. Fabbri, C. Coletti, and I. Gierz, Direct evidence for efficient ultrafast charge separation in epitaxial WS2/graphene heterostructures, Science Advances 6, 2 (2020), arXiv:1904.01379

  26. [26]

    M. M. Ugeda, A. J. Bradley, S. F. Shi, F. H. Da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z. X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, Giant bandgap renor- malization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor, Nature Materials 13, 1091 (2014)

  27. [27]

    Chernikov, C

    A. Chernikov, C. Ruppert, H. M. Hill, A. F. Rigosi, and T. F. Heinz, Population inversion and giant bandgap renormalization in atomically thin WS 2 layers, Nature Photonics 9, 466 (2015)

  28. [28]

    Ultrafast Band Structure Control of a Two-Dimensional Heterostructure

    S. Ulstrup, A. G. ˇCabo, J. A. Miwa, J. M. Riley, S. S. Grønborg, J. C. Johannsen, C. Cacho, O. Alexander, R. T. Chapman, E. Springate, M. Bianchi, M. Dendzik, J. V. Lauritsen, P. D. King, and P. Hofmann, Ultrafast Band Structure Control of a Two-Dimensional Heterostruc- ture, ACS Nano 10, 6315 (2016), arXiv:1606.03555

  29. [29]

    E. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lom- bardo, A. C. Ferrari, A. Marini, G. Cerullo, and D. Prezzi, Photo-induced bandgap renormal- ization governs the ultrafast response of single-layer MoS2, ACS Nano 10, 1182 (2016)

  30. [30]

    P. D. Cunningham, A. T. Hanbicki, K. M. McCreary, and B. T. Jonker, Photoinduced Bandgap Renormalization and Exciton Binding Energy Reduction in WS2, ACS Nano11, 12601 (2017)

  31. [31]

    Y. Lin, Y. H. Chan, W. Lee, L. S. Lu, Z. Li, W. H. Chang, C. K. Shih, R. A. Kaindl, S. G. Louie, and A. Lanzara, Exciton-driven renormalization of quasiparticle band structure in monolayer MoS2, Physical Review B 106, 1 (2022), arXiv:2205.05821. 10

  32. [32]

    Intervalley scattering in MoS$_2$ imaged by two-photon photoemission with a high-harmonic probe

    R. Wallauer, J. Reimann, N. Armbrust, J. G¨ udde, and U. H¨ ofer, Intervalley scattering in MoS2 imaged by two-photon photoemission with a high-harmonic probe, Applied Physics Letters 109, 10.1063/1.4965839 (2016), arXiv:1607.04999

  33. [33]

    Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2

    R. Bertoni, C. W. Nicholson, L. Waldecker, H. H¨ ubener, C. Monney, U. De Giovannini, M. Puppin, M. Hoesch, E. Springate, R. T. Chapman, C. Cacho, M. Wolf, A. Rubio, and R. Ernstorfer, Generation and Evolution of Spin-, Valley-, and Layer-Polarized Excited Car- riers in Inversion-Symmetric WSe2, Physical Review Letters 117, 1 (2016), arXiv:1606.03218

  34. [34]

    S. Dong, M. Puppin, T. Pincelli, S. Beaulieu, D. Christiansen, H. H¨ ubener, C. W. Nicholson, R. P. Xian, M. Dendzik, Y. Deng, Y. W. Windsor, M. Selig, E. Malic, A. Rubio, A. Knorr, M. Wolf, L. Rettig, and R. Ernstorfer, Direct measurement of key exciton properties: En- ergy, dynamics, and spatial distribution of the wave function, Natural Sciences 1, 1 (...

  35. [35]

    Wallauer, R

    R. Wallauer, R. Perea-Causin, L. M¨ unster, S. Zajusch, S. Brem, J. G¨ udde, K. Tanimura, K. Q. Lin, R. Huber, E. Malic, and U. H¨ ofer, Momentum-Resolved Observation of Exciton Formation Dynamics in Monolayer WS2, Nano Letters 21, 5867 (2021), arXiv:2012.11385

  36. [36]

    J. P. Bange, P. Werner, D. Schmitt, W. Bennecke, G. Meneghini, A. A. AlMutairi, M. Mer- boldt, K. Watanabe, T. Taniguchi, S. Steil, D. Steil, R. T. Weitz, S. Hofmann, G. S. Jansen, S. Brem, E. Malic, M. Reutzel, and S. Mathias, Ultrafast dynamics of bright and dark ex- citons in monolayer WSe2 and heterobilayer WSe2/MoS2, 2D Materials 10, 035039 (2023), a...