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Magnetic polaron formation in EuZn$_2$P$_2$

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arxiv 2504.05494 v1 pith:P7H3BGTO submitted 2025-04-07 cond-mat.str-el

Matthew S. Cook , Elizabeth A. Peterson , Caitlin S. Kengle , E. R. Kennedy , J. Sheeran , Clément Girod , G.S. Freitas , Samuel M. Greer
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Peter Abbamonte P.G. Pagliuso J. D. Thompson Sean M. Thomas P. F. S. Rosa
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classification cond-mat.str-el
keywords electroneuznmagneticpolaronantiferromagneticdilatometryelectricalformation
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abstract

Colossal magnetoresistance (CMR) has been observed across many Eu$^{2+}$-based materials; however, its origin is not completely understood. Here we investigate the antiferromagnetic insulator EuZn$_2$P$_2$ through single crystal x-ray diffraction, transmission electron microscopy, electrical transport, magnetization, dilatometry, and electron spin resonance measurements complemented by density functional theory calculations. Our electrical resistivity data reveal a large negative magnetoresistance, $MR = [R(H)-R(0)]/R(0)$, that reaches $MR = -99.7\%$ at 9~T near the antiferromagnetic ordering temperature $T_N=23\ \text{K}$. Dilatometry measurements show an accompanying field-induced lattice strain. Additionally, Eu$^{2+}$ electron spin resonance reveals a strong ferromagnetic exchange interaction between Eu$^{2+}$ and conduction electrons. Our experimental results in EuZn$_2$P$_2$ are consistent with a magnetic polaron scenario and suggest magnetic polaron formation as a prevailing explanation of CMR in Eu$^{2+}$-based compounds.

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Cited by 3 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. SPLENDOR: a novel detector platform to search for light dark matter with narrow-gap semiconductors

    physics.ins-det 2025-07 conditional novelty 6.0 of 10

    A dark matter detector platform combining a 60 meV-gap semiconductor (Eu5In2Sb6) with cryogenic HEMT readout and daily modulation analysis is presented, with projected sensitivity to sub-MeV dark matter.

  2. Engineering a Correlated Narrow-Gap Semiconductor: Effects of Ga Substitution in EuZn$_2$P$_2$

    cond-mat.mtrl-sci 2025-12 conditional novelty 5.0 of 10

    Gallium substitution in EuZn2P2 lowers resistivity by roughly two orders of magnitude, reduces the activation gap to about 63 meV, and preserves a ~90% negative magnetoresistance at 45 K.

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