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Nanoscale Mechanical Structures Fabricated from Silicon-on-Insulator Substrates
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We describe a method with which to fabricate sub-micron mechanical structures from silicon-on-insulator substrates. We believe this is the first reported method for such fabrication, and our technique allows for complex, multilayer electron beam lithography to define metallized layers and structural Si layers on these substrates. The insulating underlayer may be removed by a straightforward wet processing step, leaving suspended single crystal Si mechanical structures. We have fabricated and mechanically tested structures such as beam resonators, tuning-fork resonators, and torsional oscillators, all with smallest dimensions of 0.1-0.2 microns and fundamental resonance frequencies above 10 MHz.
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Origins of microwave losses in superconducting circuits made with silicon-on-insulator substrates
At millikelvin temperatures, trap-rich SOI substrates give the highest superconducting-resonator quality factors; high-resistivity SOI suffers from parasitic sheet conduction at the buried-oxide interface.
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