Practical Demonstrations of FR3-Band Thin-Film Lithium Niobate Acoustic Filter Design
Pith reviewed 2026-05-19 12:33 UTC · model grok-4.3
The pith
Thin-film lithium niobate acoustic filters achieve 1.79 dB insertion loss at 20.5 GHz with 8.58 percent bandwidth and over 14.9 dB rejection in the FR3 band.
A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.
Core claim
The implemented three-element ladder filter prototype achieves an insertion loss of only 1.79 dB and a controlled 3-dB FBW of 8.58 percent at 20.5 GHz, with an out-of-band rejection greater than 14.9 dB across the entire FR3 band, while featuring a compact footprint of 0.90 by 0.74 square millimeters. An eight-element filter prototype shows an insertion loss of 3.80 dB, a fractional bandwidth of 6.12 percent at 22.0 GHz, and a high out-of-band rejection of 22.97 dB.
What carries the argument
The technique that uses the thickness-dependent resonant frequency of first-order antisymmetric lateral-field-excited bulk acoustic wave resonators together with the in-plane anisotropic properties of 128-degree Y-cut thin-film lithium niobate to set filter center frequency and fractional bandwidth.
If this is right
- Adding more resonator stages in the ladder network increases out-of-band rejection while keeping the same center frequency and thickness-tuning method, as shown by the eight-element prototype.
- The same thickness and anisotropy controls can be used to build multiple filters on one chip, each tuned to a different FR3 sub-band.
- The compact footprint allows many such filters to be placed side by side without increasing the overall size of a radio front-end.
- The approach extends to higher-order filters without requiring new materials or fabrication steps.
Where Pith is reading between the lines
- Monolithic filter banks built this way could reduce the number of separate chips needed in a 6G handset, lowering both size and power consumption.
- Temperature or power-induced drifts in resonant frequency might require on-chip trimming circuits that were not tested in the prototypes.
- The same resonators could be combined with thin-film lithium niobate electro-optic modulators on the same substrate to create integrated transmit-receive modules.
Load-bearing premise
Small changes in film thickness and crystal cut direction will produce predictable and repeatable shifts in resonator frequency and coupling strength that match the values needed for the target filter response.
What would settle it
Fabricate resonators with a range of film thicknesses around the design value, measure their actual resonant frequencies, and check whether the observed frequency shifts match the predicted thickness dependence within the tolerance required for the stated 8.58 percent bandwidth.
Figures
read the original abstract
This article presents an approach to control the operating frequency and fractional bandwidth (FBW) of miniature acoustic filters in thin-film lithium niobate (TFLN). More specifically, we used first-order antisymmetric (A1) mode lateral-field-excited bulk acoustic wave resonators (XBARs) to achieve efficient operation at 20.5 GHz. Our technique leverages the thickness-dependent resonant frequency of A1 XBARs, combined with the in-plane anisotropic properties of 128$^\circ$ Y-cut TFLN, to customize filter characteristics. The implemented three-element ladder filter prototype achieves an insertion loss (IL) of only 1.79 dB and a controlled 3-dB FBW of 8.58% at 20.5 GHz, with an out-of-band (OoB) rejection greater than 14.9 dB across the entire FR3 band, while featuring a compact footprint of 0.90 $\times$ 0.74 mm2. Moreover, an eight-element filter prototype shows an IL of 3.80 dB, an FBW of 6.12% at 22.0 GHz, and a high OoB rejection of 22.97 dB, demonstrating the potential for expanding to higher-order filters. As frequency allocation requirements become more stringent in future FR3 bands, our technique showcases promising capability in enabling compact and monolithic filter banks toward next-generation acoustic filters for 6G and beyond.
Editorial analysis
A structured set of objections, weighed in public.
Referee Report
Summary. The manuscript presents an approach to control operating frequency and fractional bandwidth (FBW) of miniature acoustic filters in thin-film lithium niobate (TFLN) for the FR3 band. It uses first-order antisymmetric (A1) mode lateral-field-excited bulk acoustic wave resonators (XBARs) in 128° Y-cut material, exploiting thickness-dependent resonance for frequency setting and in-plane anisotropy for FBW control. Fabricated prototypes are demonstrated: a three-element ladder filter achieves 1.79 dB insertion loss and 8.58% 3-dB FBW at 20.5 GHz with >14.9 dB out-of-band rejection in a 0.90 × 0.74 mm² footprint; an eight-element filter achieves 3.80 dB IL, 6.12% FBW at 22.0 GHz, and 22.97 dB rejection. The work positions these as enabling compact monolithic filter banks for 6G.
Significance. If the reported measured performance holds, the work is significant for providing direct experimental evidence of functional A1 XBAR-based filters at 20–22 GHz with competitive insertion loss, controlled bandwidth, and high out-of-band rejection in compact footprints. The physical fabrication and RF measurement results (rather than purely simulated) strengthen the demonstration of the thickness-and-anisotropy customization technique and its relevance to FR3-band requirements in next-generation wireless systems.
major comments (2)
- [Results section (prototypes)] Results section (prototypes): The headline metrics (IL = 1.79 dB, FBW = 8.58% at 20.5 GHz for the three-element filter; IL = 3.80 dB, FBW = 6.12% at 22.0 GHz for the eight-element filter) are reported as single-point values without error bars, measurement uncertainty, simulation-to-measurement overlay, or statistics across multiple devices. This weakens assessment of whether the thickness-dependent A1 resonance and anisotropy tuning are robust enough to support the claimed customization technique beyond these specific prototypes.
- [Design technique description] Design technique description: No sensitivity analysis, tolerance budget, or discussion of fabrication variations (e.g., film thickness spread of ~5–10 nm or orientation misalignment of 1–2°) is provided, even though the abstract and introduction present thickness dependence and 128° Y-cut anisotropy as the means to reliably customize frequency and FBW. Without such quantification, it remains unclear whether the achieved specs reflect general applicability or required exceptional process control.
minor comments (3)
- [Figures] Figure captions should explicitly state whether traces are measured data, simulated, or both, and include scale bars or annotations for the reported footprints.
- [Results] Consider adding a summary table comparing the two prototypes' key parameters (IL, FBW, rejection, center frequency, size) for clarity.
- [Introduction] Ensure all acronyms (XBAR, FBW, OoB, TFLN) are defined at first use in the main text.
Simulated Author's Rebuttal
We thank the referee for the constructive comments on statistical robustness and fabrication sensitivity. We address each major comment point by point below and indicate the planned revisions.
read point-by-point responses
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Referee: Results section (prototypes): The headline metrics (IL = 1.79 dB, FBW = 8.58% at 20.5 GHz for the three-element filter; IL = 3.80 dB, FBW = 6.12% at 22.0 GHz for the eight-element filter) are reported as single-point values without error bars, measurement uncertainty, simulation-to-measurement overlay, or statistics across multiple devices. This weakens assessment of whether the thickness-dependent A1 resonance and anisotropy tuning are robust enough to support the claimed customization technique beyond these specific prototypes.
Authors: We agree that the presentation would benefit from additional context on variability. In the revised manuscript we will include simulation-to-measurement overlay plots for both filters and describe the RF measurement setup. We will also report the observed device-to-device variation from the measured samples in the current fabrication run. Comprehensive multi-device statistics were not collected in this proof-of-concept effort; this limitation will be stated explicitly. revision: partial
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Referee: Design technique description: No sensitivity analysis, tolerance budget, or discussion of fabrication variations (e.g., film thickness spread of ~5–10 nm or orientation misalignment of 1–2°) is provided, even though the abstract and introduction present thickness dependence and 128° Y-cut anisotropy as the means to reliably customize frequency and FBW. Without such quantification, it remains unclear whether the achieved specs reflect general applicability or required exceptional process control.
Authors: We will add a dedicated paragraph in the design section that quantifies the effect of typical fabrication variations. Using wafer-level thickness uniformity data from our process (standard deviation ~5 nm), we will present simulated frequency and FBW shifts and show that the anisotropy-based bandwidth control remains effective within 1–2° orientation misalignment. This will demonstrate that the reported performance is achievable under standard process control. revision: yes
Circularity Check
No circularity: results are experimental measurements from fabricated devices
full rationale
The paper reports measured insertion loss, FBW, and rejection from physical three-element and eight-element ladder filter prototypes fabricated in 128° Y-cut TFLN using A1 XBARs. Performance numbers (1.79 dB IL at 20.5 GHz, 8.58% FBW, etc.) are direct RF measurement outcomes, not outputs of any derivation, equation, or model that reduces to its own inputs by construction. No self-definitional steps, fitted parameters renamed as predictions, or load-bearing self-citations appear in the provided text; the technique description relies on material properties and fabrication rather than circular logic.
Axiom & Free-Parameter Ledger
free parameters (1)
- Piezoelectric film thickness
axioms (2)
- domain assumption A1-mode lateral-field-excited XBARs exhibit resonant frequency that depends on piezoelectric film thickness.
- domain assumption 128° Y-cut TFLN possesses usable in-plane anisotropy that can be leveraged for filter response shaping.
Reference graph
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