Pith. sign in

REVIEW 3 major objections 5 minor 37 references

Superstrate structured Sb$_2$S$_3$ thin-film solar cells by magnetron sputtering of Sb and post-sulfurization

T0 review · 3 major / 5 minor · reviewed 2026-08-07 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗

Pith's one-line read A two-step sputter-and-sulfurize process makes the first superstrate antimony sulfide solar cell, reaching 2.76% efficiency with a semi-transparent 100 nm absorber.

desk verdict A genuine first demonstration of a superstrate sputtered Sb2S3 cell, but the headline 2.76% efficiency is undermined by a JV/EQE mismatch that the authors need to explain. read the letter →

arxiv 2506.01170 v1 pith:T33MGLGW submitted 2025-06-01 cond-mat.mtrl-sci physics.chem-ph

Evgeniia Gilshtein , Harshvardhan Maheshkant Gupta , Andrea Maria Pierri Enevoldsen , Cristina Besleaga , Aurelian Catalin Galca , Stela Canulescu This is my paper
classification cond-mat.mtrl-sciphysics.chem-ph
keywords Sb2S3superstratesolarcellsmagnetronsputteringpost-sulfurizationsemi-transparentphotovoltaicsthin-filmcadmiumsulfidebufferbuilding-integrated
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper reports a thin-film solar cell whose light-absorbing layer is made of antimony sulfide (Sb$_2$S$_3$) produced by a two-step, solvent-free route: sputter a metallic antimony film, then heat it in sulfur vapor. The best device, with a 100 nm absorber and a 50 nm cadmium sulfide buffer, reaches a power conversion efficiency of 2.76%, an open-circuit voltage of 650 mV, and a short-circuit current of 14 mA cm$^{-2}$. The cell stack is semi-transparent, passing roughly 20% of visible light, so the authors position it for indoor light harvesting and building-integrated photovoltaics. If the claim holds, it would establish magnetron sputtering as a viable scalable alternative to solution processing for Sb$_2$S$_3$ superstrate devices.

What carries the argument

The central object is the two-step synthesis: a metallic antimony film deposited by RF magnetron sputtering, then sulfurized in a graphite box inside a tube furnace at 350 °C with 0.1 g of sulfur under nitrogen. This converts the Sb film into crystalline stibnite-phase Sb$_2$S$_3$ (the mineral form of antimony sulfide) while controlling film thickness through sputtering time. The other load-bearing mechanism is thickness selection: a 100 nm absorber keeps photo-generated carriers within the ~180 nm hole diffusion length, and a 50 nm CdS buffer reduces parasitic UV absorption. Together these choices set the series resistance, shunt resistance, and interface recombination that determine the device's efficiency.

What would settle it

Integrate the EQE spectrum of the champion device over the AM1.5G solar spectrum and compare the integrated current density with the J-V measured Jsc of 14 mA cm$^{-2}$; a mismatch beyond typical measurement uncertainty would indicate the efficiency is overestimated.

Watch

Extended reading notes

Core claim

The paper's central claim is that a superstrate-structured Sb$_2$S$_3$ solar cell can be made by RF magnetron sputtering of metallic antimony followed by post-sulfurization, and that this configuration produces a working device with a champion efficiency of 2.76%. This is presented as the first such superstrate device from this sputtering route; earlier sputtered Sb$_2$S$_3$ cells were mostly substrate-configured or, in one superstrate attempt with a similar stack, gave no efficiency. The authors trace the improvement to thickness engineering: reducing the absorber from 300 nm to 100 nm and the CdS buffer from 100 nm to 50 nm lowers series resistance from 52 to 17 $\Omega\,\mathrm{cm}^2$ and improves carrier collection, overcoming the poor hole transport that limits thicker films. Structural analysis confirms stibnite-phase Sb$_2$S$_3$ with Sb-S bonds above 90 at% and a bandgap of about 1.7 eV, and the device transmits about 20% of visible light.

Load-bearing premise

The champion cell's short-circuit current of 14 mA cm$^{-2}$ is assumed to be consistent with its measured external quantum efficiency, which by integration suggests a lower value around 8–10 mA cm$^{-2}$.

Editorial extensions

If this is right

  • A 100 nm absorber can outperform thicker ones despite absorbing less light, because carrier collection and series resistance dominate when hole diffusion is short.
  • Semi-transparent Sb$_2$S$_3$ cells with ~20% visible transparency are suitable for indoor and building-integrated photovoltaics, where lower efficiency is acceptable.
  • Reducing the CdS buffer from 100 nm to 50 nm improves photocurrent by cutting parasitic UV absorption, at the cost of some open-circuit voltage.
  • Defect passivation and interface engineering, not just thickness, are the next levers for higher efficiency.
  • The sputter-plus-sulfurization route gives precise thickness control, making it a practical vacuum-based alternative to solution deposition for this material.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • The champion Jsc of 14 mA cm$^{-2}$ appears higher than what the measured EQE spectrum integrates to (roughly 8–10 mA cm$^{-2}$), so the true efficiency may be lower than 2.76%.
  • The success of a 100 nm absorber suggests that even thinner semi-transparent cells could be tuned for indoor light harvesting, where the wide bandgap and low-intensity light favor thin absorbers.
  • Comparing this sputtered device with an identically thick solution-processed Sb$_2$S$_3$ cell on the same CdS/Spiro-OMeTAD stack would separate the deposition route's effect from the thickness effect.
  • The low shunt resistance (66 $\Omega\,\mathrm{cm}^2$) indicates that interface recombination, not absorption, is the dominant loss, so contact passivation is likely to yield the next efficiency jump.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript reports superstrate-structured Sb2S3 thin-film solar cells fabricated by RF magnetron sputtering of metallic Sb followed by post-sulfurization. The authors study the effect of CdS buffer thickness and Sb2S3 absorber thickness on device performance, and report a champion device with a power conversion efficiency of 2.76%, Jsc of 14 mA/cm2, and Voc of 650 mV for a 100 nm Sb2S3 absorber on a 50 nm CdS buffer. Structural and compositional characterization (XRD, Raman, XPS, SEM) supports the formation of crystalline stibnite-phase Sb2S3 with a direct bandgap around 1.71 eV. The paper claims this is the first superstrate Sb2S3 solar cell made by this sputtering route, and emphasizes the potential for semi-transparent and indoor photovoltaic applications.

Significance. If the reported efficiency is correct, the work provides a useful data point for scalable, vacuum-based fabrication of Sb2S3 solar cells in a superstrate configuration, complementing the more common solution-processed and substrate-type devices. The systematic thickness study, the demonstration of semi-transparency, and the combination of structural characterization methods are valuable. The paper's central quantitative claim, however, depends on the consistency between the JV-derived Jsc and the EQE spectra. Because the manuscript does not demonstrate that consistency, the headline efficiency is not yet fully supported. The qualitative novelty (first sputtered superstrate Sb2S3 device) is plausible and likely survives a revision, but the reported PCE value requires verification or correction.

major comments (3)
  1. [§3, Figure 5b and 5d] The champion Jsc of 14 mA/cm2 is difficult to reconcile with the EQE spectra shown in Figure 5b. For an Sb2S3 absorber with Eg ≈ 1.71 eV, the AM1.5G photon flux from 400–725 nm corresponds to roughly 42 mA/cm2 at unity EQE, so a Jsc of 14 mA/cm2 requires a spectrally averaged zero-bias EQE near 33%. The reported zero-bias EQE peaks at about 15%, and only reaches 'above 35%' when a -0.5 V bias is applied. Integrated zero-bias EQE would yield a Jsc of roughly 3–6 mA/cm2, and even the biased EQE would integrate to only about 8–11 mA/cm2. This inconsistency directly affects the champion efficiency claim of 2.76%; the authors should provide a direct comparison between the integrated EQE and the JV-measured Jsc, including the bias conditions and any spectral mismatch corrections.
  2. [§3, Figures 3c and 5b] There is an internal inconsistency in the reported EQE peak values. In the absorber-thickness series, the text states 'The peak EQE value reached over 20% for solar cells with 100 nm absorbers' (Figure 3c), while for the best-performing series it states 'The peak EQE intensity value significantly improved from 15% to above 35% compared to the previous device series' (Figure 5b). It is unclear whether the 15% refers to the zero-bias condition for the champion series or to a different set of devices; if the champion device's zero-bias EQE is actually lower than that of the earlier 100 nm series, the Jsc increase from 8.4 to 14 mA/cm2 is unexpected and requires explanation. Please clarify which spectra correspond to which devices and report the integrated Jsc for both bias conditions.
  3. [§2.2 and §3, Figure 5b] The EQE measurement description does not specify whether the EQE spectra were measured under white-light bias or with a chopper, nor does it give the integration limits or the reference cell calibration. Since the Jsc/EQE consistency is the main quantitative evidence, the authors should provide these details and a table comparing Jsc from JV and from EQE integration for the champion and average devices. Without this, the reader cannot assess whether the 2.76% efficiency is reliable.
minor comments (5)
  1. [Abstract and §3] The abstract states 'enhanced short-circuit current density up to 14 mA/cm2,' but the text in §3 reports an average Jsc of 11.4 mA/cm2 with a maximum of 14.0 mA/cm2; please make the statistical basis clear in the abstract as well.
  2. [Figure 1 caption] The caption refers to 'Table with reported results' inside a figure; it would be clearer to present this as a proper table in the main text or supplementary material.
  3. [§3, XPS discussion] The text says Sb-S bonds account for 'approximately 79 at%' while the S 2p analysis says sulfur in Sb2S3 has 'dominant contribution above 90 at%.' These two percentages describe different elements (Sb 3d vs S 2p) but the phrasing is confusing; please clarify that they are not directly comparable quantities.
  4. [§3, Rs/Rsh values] The series resistance and shunt resistance values are reported as 52, 35, 25 Ω·cm2 and 114, 110, 102 Ω·cm2, but it is not stated how these were extracted from the JV curves; citing a reference is insufficient if the method (e.g., slope at Voc or at 0 V) is not described.
  5. [Throughout] There are several grammatical issues and typos (e.g., 'we tried the increased the amount of sulfur,' 'the temperature of the whole tube furnace with graphite box containing samples and sulfur powder was increased with 20°C/min ramp rate and kept at 350°C for 15 min with natural cool down by the end of the process'). A careful language edit is recommended.

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity found: this is an experimental parametric study whose claims rest on directly measured device metrics and external literature comparisons.

full rationale

The paper reports an experimental fabrication and optimization study of superstrate Sb2S3 solar cells. The central claims, including the champion PCE of 2.76%, Jsc of 14 mA/cm2, and Voc of 650 mV, are presented as directly measured J-V parameters. The absorber-thickness and CdS-thickness trends are empirical observations supported by measured JV curves, EQE spectra, transmittance data, SEM, XPS, Raman, and XRD. No parameter is fitted to a subset of data and then used to predict a closely related quantity; no derivation is made from the paper's own fitted inputs. The only quantitative cross-check, the bandgap extracted from EQE versus the Tauc-plot value, compares two independent spectroscopic measurements and is not circular. The literature comparisons are against prior external reports, and the claim of being the first superstrate sputtered device is a factual novelty statement, not a derivation. A possible inconsistency between the reported Jsc and the zero-bias EQE spectrum is a measurement-consistency concern that could affect the accuracy of the efficiency claim, but it is not a form of circular reasoning. Therefore the appropriate circularity score is 0.

Assumptions & free parameters 4 free parameters · 5 assumptions · 0 invented entities

The central claim rests on measured device performance and structural characterization. No new physical entities are introduced. The free parameters are process choices made during optimization, not fitted constants in a model, but they are hand-selected to maximize efficiency.

free parameters (4)
  • Sb2S3 absorber thickness (nominal 100 nm) = 140 nm by SEM
    Chosen after a thickness series (300, 200, 100 nm nominal) because it gave the best PCE. The central claim depends on this optimum.
  • CdS buffer thickness (50 nm) = 50 nm
    Selected after comparing 100 nm and 50 nm CdS; 50 nm gave higher Jsc and PCE.
  • Sulfur powder amount (0.1 g) = 0.1 g
    Taken from prior work and confirmed by testing 0.3 g, which gave worse performance.
  • Sulfurization temperature (350 C) = 350 C
    Selected based on previous knowledge and after testing 300 C and 400 C.
assumptions (5)
  • domain assumption Raman peak assignments correspond to stibnite Sb2S3
    Raman lines at 154, 189, 238, 283, 302, 310 cm-1 are attributed to Sb2S3, following literature references.
  • domain assumption XRD pattern indexing to stibnite PDF 00-042-1393
    The XRD pattern is compared with a standard stibnite pattern; the strongest peaks are assigned to Sb2S3.
  • domain assumption XPS binding energy assignments for Sb2S3, Sb, and Sb2O3
    Sb 3d and S 2p peaks are assigned to specific chemical states based on literature (e.g., Zakaznova-Herzog).
  • domain assumption EQE derivative inflection gives the optical bandgap
    The first derivative of EQE is used to extract Eg = 1.71 eV, a standard but model-dependent method.
  • domain assumption Tauc plot of absorption gives the bandgap
    A Tauc plot is used to derive Eg = 1.72 eV, assuming an indirect or direct allowed transition.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Superstrate structured Sb$_2$S$_3$ thin-film solar cells by magnetron sputtering of Sb and post-sulfurization." pith.science (2026). https://pith.science/paper/T33MGLGW

@misc{pith2026250601170,
  author       = {Pith},
  title        = {Pith review of: Superstrate structured Sb$_2$S$_3$ thin-film solar cells by magnetron sputtering of Sb and post-sulfurization},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/T33MGLGW}},
  note         = {Machine review of arXiv:2506.01170}
}
abstract

We report on the fabrication and optimization of semi-transparent antimony sulfide (Sb$_2$S$_3$) thin-film solar cells in a superstrate configuration, using RF magnetron sputtering of metallic antimony followed by post-deposition sulfurization. The influence of absorber and buffer layer thicknesses on device performance was systematically studied in FTO/CdS/Sb$_2$S$_3$/Spiro-OMeTAD/Au architectures. Optimizing the Sb$_2$S$_3$ absorber thickness to 100 nm yielded a champion device with a power conversion efficiency of 2.76\%, short-circuit current density of 14 mA/cm$^2$, and open-circuit voltage of 650 mV. The devices exhibit up to 20\% transmittance in the 380--740 nm wavelength range, indicating their suitability for indoor and building-integrated photovoltaic applications. Structural and compositional analyses confirmed high-purity Sb$_2$S$_3$ (more than 90 at.\%) and improved crystallinity after sulfurization. These results demonstrate the potential of sputtered Sb$_2$S$_3$ as a scalable and tunable absorber for emerging transparent thin-film solar technologies and highlight the critical role of thickness optimization and interface control in device performance.

Figures

Figures reproduced from arXiv: 2506.01170 by the authors.

Figure 4
Figure 4. XPS, Raman, and XRD characterization of 100 nm Sb2S3 absorber: XPS high-resolution spectra of a) Sb 3d and b) S 2p after 400 s Ar+ ion sputtering; c) Raman spectra of the Sb metallic film and Sb2S3 film sulfurized from Sb, vs. Sb2S3 from ceramic target reference measured with 532 nm laser excitation wavelength; d) XRD patterns of fabricated Sb2S3 film and reference reflexes according to annotations of stibnite Sb2S3… view at source ↗

Discussion (0). Sign in to comment.

Reference graph

Works this paper leans on

37 extracted references · 36 canonical work pages

  1. [1]

    & Zhang, Y

    Dong, J., Liu, Y ., Wang, Z. & Zhang, Y . Boosting V OC of antimony chalcogenide solar cells: A review on interfaces and defects. Nano Select 2, 1818–1848 (2021). 15

    work page 2021

  2. [2]

    Wang, S. et al. A Novel Multi-Sulfur Source Collaborative Chemical Bath Deposition Technology Enables 8%-Efficiency Sb2S3 Planar Solar Cells. Advanced Materials 34, (2022)

    work page 2022

  3. [3]

    Li, Z. et al. 9.2%-efficient core-shell structured antimony selenide nanorod array solar cells. Nat Commun 10, (2019)

    work page 2019

  4. [4]

    Wang, X. et al. Manipulating the Electrical Properties of Sb2(S,Se)3 Film for High - Efficiency Solar Cell. Adv Energy Mater 10, (2020)

    work page 2020

  5. [5]

    & Tang, J

    Kondrotas, R., Chen, C. & Tang, J. Sb2S3 Solar Cells. Joule vol. 2 857–878 Preprint at https://doi.org/10.1016/j.joule.2018.04.003 (2018)

    doi:10.1016/j.joule.2018.04.003 2018

  6. [6]

    A., Chen, S., Khalaf, G

    Shah, U. A., Chen, S., Khalaf, G. M. G., Jin, Z. & Song, H. Wide Bandgap Sb2S3 Solar Cells. Advanced Functional Materials vol. 31 Preprint at https://doi.org/10.1002/adfm.202100265 (2021)

    work page doi:10.1002/adfm.202100265 2021

  7. [7]

    & Chen, T

    Li, K., Tang, R., Zhu, C. & Chen, T. Critical Review on Crystal Orientation Engineering of Antimony Chalcogenide Thin Film for Solar Cell Applications. Advanced Science vol. 11 Preprint at https://doi.org/10.1002/advs.202304963 (2024)

    work page doi:10.1002/advs.202304963 2024

  8. [8]

    Assar, A. et al. Gettering in PolySi/SiO xPassivating Contacts Enables Si-Based Tandem Solar Cells with High Thermal and Contamination Resilience. ACS Appl Mater Interfaces 14, 14342–14358 (2022)

    work page 2022

Show all 37 references
  1. [9]

    & Engberg, S

    Tsekou, A., Martinho, F., Miakota, D., Canulescu, S. & Engberg, S. The effect of soft - annealing on sputtered Cu2ZnSnS4 thin-film solar cells. Appl Phys A Mater Sci Process 128, (2022)

    2022

  2. [10]

    Luo, J. et al. Fabrication of Sb2S3 thin films by magnetron sputtering and post - sulfurization/selenization for substrate structured solar cells. J Alloys Compd 826, (2020)

    2020

  3. [11]

    Gao, C. et al. Fabrication of Sb2S3 thin films by sputtering and post-annealing for solar cells. Ceram Int 45, 3044–3051 (2019)

    2019

  4. [12]

    Wang, Z. et al. Self-assembled growth of quasi-vertically oriented Sb2S3 thin films for substrate structured solar cells. Ceram Int 50, 4729–4736 (2024)

    2024

  5. [13]

    Lei, H. et al. Copper doping of Sb2S3: fabrication, properties, and photovoltaic application. Journal of Materials Science: Materials in Electronics 30, 21106–21116 (2019)

    2019

  6. [14]

    Uc-Canché, S. et al. Influence of Sulfurization Time on Sb2S3 Synthesis Using a New Graphite Box Design. Materials 17, (2024)

    2024

  7. [15]

    Martinho, F. et al. Persistent Double-Layer Formation in Kesterite Solar Cells: A Critical Review. ACS Appl Mater Interfaces 12, 39405–39424 (2020). 16

    2020

  8. [16]

    I., Montiel -González, Z., Mathews, N

    Medina-Montes, M. I., Montiel -González, Z., Mathews, N. R. & Mathew, X. The influence of film deposition temperature on the subsequent post -annealing and crystallization of sputtered Sb2S3 thin films. Journal of Physics and Chemistry of Solids 111, 182–189 (2017)

    2017

  9. [17]

    & Chen, G

    Chen, Z. & Chen, G. The effect of absorber thickness on the planar Sb2S3 thin film solar cell: Trade-off between light absorption and charge separation. Solar Energy vol. 201 323–329 Preprint at https://doi.org/10.1016/j.solener.2020.02.074 (2020)

    2020 doi

  10. [18]

    & Hussain, Z

    Dolma, P., Padha, N., Banotra, A., Niranjan, R. & Hussain, Z. Effect of change in substrate temperature, layer thickness on the behaviour of n -CdS thin films and formation of their diodes and photovoltaic cell. Thin Solid Films 802, (2024)

    2024

  11. [19]

    A., Leighton, D

    Christians, J. A., Leighton, D. T. & Kamat, P. V . Rate limiting interfacial hole transfer in Sb2S3 solid-state solar cells. Energy Environ Sci 7, 1148–1158 (2014)

    2014

  12. [20]

    Zhao, J. et al. Unveiling the Influence of Absorber Thickness on Efficient Sb2(S, Se)3 Solar Cells Through Controlled Chemical Bath Deposition. Surfaces and Interfaces 42, (2023)

    2023

  13. [21]

    Younsi, Z. et al. Scrutinizing transport phenomena and recombination mechanisms in thin film Sb2S3 solar cells. Sci Rep 14, (2024)

    2024

  14. [22]

    Diantoro, M. et al. Shockley’s equation fit analyses for solar cell parameters from I -V curves. International Journal of Photoenergy 2018, (2018)

    2018

  15. [23]

    Islam, M. T. & Thakur, A. K. Two stage modelling of solar photovoltaic cells based on Sb2S3 absorber with three distinct buffer combinations. Solar Energy 202, 304 –315 (2020)

    2020

  16. [24]

    Wang, Y . et al. PbSe-Induced Sb2S3 Crystallization and Interface Band Optimization for High-Efficiency Bulk Heterojunction Sb2S3 Solar Cells. Adv Funct Mater (2025) doi:10.1002/adfm.202420361

    2025 doi

  17. [25]

    Zakaznova-Herzog, V . P. et al. High resolution XPS study of the large -band-gap semiconductor stibnite (Sb2S3): Structural contributions and surface reconstruction. Surf Sci 600, 348–356 (2006)

    2006

  18. [26]

    Chowdhury, T. A. Depth Profile Study of Electroless Deposited Sb<sub>2</sub>S<sub>3</sub> Thin Films Using XPS for Photovoltaic Applications. Materials Sciences and Applications 14, 397–406 (2023)

    2023

  19. [27]

    Liu, X. et al. Grain Engineering of Sb2S3 Thin Films to Enable Efficient Planar Solar Cells with High Open-Circuit V oltage. Advanced Materials 36, (2024)

    2024

  20. [28]

    Ramish Esterlich, J. et al. Advances in the one -step synthesis of 2D and 3D sulfide materials grown by pulsed laser deposition assisted by a sulfur thermal cracker. Appl Phys A Mater Sci Process 129, (2023). 17

    2023

  21. [29]

    & Beran, A

    Kharbish, S., Libowitzky, E. & Beran, A. Raman spectra of isolated and interconnected pyramidal XS3 groups (X = Sb,Bi) in stibnite, bismuthinite, kermesite, stephanite and bournonite. European Journal of Mineralogy 21, 325–333 (2009)

    2009

  22. [30]

    & Jovanovski, G

    Makreski, P., Petruševski, G., Ugarković, S. & Jovanovski, G. Laser -induced transformation of stibnite (Sb2S3) and other structurally related salts. Vib Spectrosc 68, 177–182 (2013)

    2013

  23. [31]

    I., Montiel-González, Z., Paraguay-Delgado, F., Mathews, N

    Medina-Montes, M. I., Montiel-González, Z., Paraguay-Delgado, F., Mathews, N. R. & Mathew, X. Structural, morphological and spectroscopic ellipsometry studies on sputter deposited Sb2S3 thin films. Journal of Materials Science: Materials in Electronics 27, 9710–9719 (2016)

    2016

  24. [32]

    Parize, R. et al. In situ analysis of the crystallization process of Sb2S3 thin films by Raman scattering and X-ray diffraction. Mater Des 121, 1–10 (2017)

    2017

  25. [33]

    Mohamed Ismail, M. et al. Antimonene nanosheets with enhanced electrochemical performance for energy storage applications. Dalton Transactions 49, 13717 –13725 (2020)

    2020

  26. [34]

    Rotaru, V . et al. Structural and vibrational properties of Sb2S3: Practical methodologies for accelerated research and application of this low dimensional material. iScience 27, (2024)

    2024

  27. [35]

    & Okamoto, K

    Kyono, A., Kimata, M., Matsuhisa, M., Miyashita, Y . & Okamoto, K. Low-temperature crystal structures of stibnite implying orbital overlap of Sb 5s2 inert pair electrons. Phys Chem Miner 29, 254–260 (2002)

    2002

  28. [36]

    Y ., Tseng, C

    Tamilselvan, M., Byregowda, A., Su, C. Y ., Tseng, C. J. & Bhattacharyya, A. J. Planar heterojunction solar cell employing a single-source precursor solution-processed Sb2S3 thin film as the light absorber. ACS Omega 4, 11380–11387 (2019)

    2019

  29. [37]

    Kumar, P. et al. All-Inorganic Hydrothermally Processed Semitransparent Sb2S3 Solar Cells with CuSCN as the Hole Transport Layer. ACS Appl Energy Mater 7, 1421–1432 (2024). 18 Supplementary Figures Fig. S1. Variation of S powder amount during sulfurization of Sb: SEM images re...

    2024

Pith tools

Reviewed August 7, 2026 · model on record in the stance chip above.