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Paper Citation Record · LEDGER

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance

As of 21 August 2026, this Paper Citation Record lists 43 of 43 outbound references and 0 inbound Pith citation observations for arXiv:2506.08556.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2506.08556 v1

Coverage vector

measured 43 of 43 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-07T05:12:52.288339Z

measured 43 of 43 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-20T06:33:59.587034+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

43 of 43 outbound references displayed

  • verified exact14
  • verified fuzzy12
  • unresolved2
  • parse uncertain0
  • malformed identifier1
  • metadata mismatch14

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation aacec638-46c0-45c6-ba4f-8fb39da7abf3 · outbound

This paper cites Mater Sci Semicond Process 134:106002.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Mater Sci Semicond Process 134:106002

Reference 1

Resolution
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raw_fallback, observed 2026-08-07T05:12:53.783832Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.123293Z digest=sha256:431a72112ab4204f5054acb2db8c881cb5db6b4a12a526960d8b5bf468d7827b

Observation c4910976-3dbf-418a-9386-605249572bc3 · outbound

This paper cites J Semicond 41:061401.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance J Semicond 41:061401

Reference 2

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.493016Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.127669Z digest=sha256:e63c4906113741e5106b6e9d84a36e3a6a024a60bde97c954e507dc801aac994

Observation 4774bd8a-f888-4df6-ae3f-4a298fd79a2f · outbound

This paper cites Nanoelectronics : Physics, Materials and Devices.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Nanoelectronics : Physics, Materials and Devices

Reference 3

Resolution
verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.925028Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.131808Z digest=sha256:3d055660de2e07061d3814f68dfcc0b31559d95176e308a19664e47013f0dd5f

Observation dcdade2a-7113-4724-a5b6-810b309dd341 · outbound

This paper cites Int J Appl Eng Res 11:4922- -4929.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Int J Appl Eng Res 11:4922- -4929

Reference 4

Resolution
verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.913395Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.135863Z digest=sha256:406693c297ba3ad0a4435ac910a4a0766fa7fa7e460fed33a565791cf25b3430

Observation 6e4243f2-8dff-4737-b759-55fc1070da19 · outbound

This paper cites Jpn J Appl Phys 31:L455.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Jpn J Appl Phys 31:L455

Reference 5

Resolution
verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.901690Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.139994Z digest=sha256:59884c7a1ddd18dd04e00da708763f8bcc46e7e0567420757b6082d0cb270839

Observation 2a916fa6-f1d8-41e6-8368-a67c40b98083 · outbound

This paper cites Silicon 15:2385–2405.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Silicon 15:2385–2405

Reference 6

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.480427Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.144142Z digest=sha256:ad5bc005afb07a081fc5300a3d5e8aaba42422901189293ad7c07d81e5e62dec

Observation 23353334-13b2-4cda-a3c8-790cd28af14f · outbound

This paper cites 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Reference 7

Resolution
verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.889696Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.148709Z digest=sha256:afc83d9e72a1f3f7085dcae0ea35d3f965a8b55838da35842ae7b56e0a4b3bed

Observation 80507b73-3729-4560-b966-42d2a74eaf7b · outbound

This paper cites IEEE Trans Electron Devices 59:292 –301.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Electron Devices 59:292 –301

Reference 8

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metadata mismatch
raw_fallback, observed 2026-08-07T05:12:53.704093Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.152509Z digest=sha256:c85e56a9f9300de9d5b34f1e02d27f245d20317b3ab58ffb5499b4a4a4f29099

Observation e73eb661-c513-436c-99dd-53a7bd4377e4 · outbound

This paper cites 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC).

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

Reference 9

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verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.878173Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.156228Z digest=sha256:b5a8ac39351d35f208001f595e9cf77c595f2e5bbdb077fdbbc7569afe94be9a

Observation 490b8568-15b0-4828-af56-b17a8cac5dca · outbound

This paper cites Wiley Encyclopedia of Electrical and Electronics Engineering.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Wiley Encyclopedia of Electrical and Electronics Engineering

Reference 10

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verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.866172Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.160330Z digest=sha256:2d9f52bae7236664fe9e3a8f3c05a6b646f33e33f25238c9e8d046ee109d3e09

Observation 2d727411-2081-4d26-8faf-e5f705c936cb · outbound

This paper cites IEEE Electron Device Lett 35:1170–1172.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Electron Device Lett 35:1170–1172

Reference 11

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raw_fallback, observed 2026-08-07T05:12:53.629322Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.164672Z digest=sha256:03e362f56f4a871d4f35616190c63210c72db0b5dc600340bcf0fb3eb8801257

Observation a15a1e88-2fb0-4136-a62a-677e623b4691 · outbound

This paper cites IEEE Trans Electron Devices 54:1725–1733.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Electron Devices 54:1725–1733

Reference 12

Resolution
metadata mismatch
raw_fallback, observed 2026-08-07T05:12:53.548492Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.168652Z digest=sha256:5e6469731a032d265eac1f6a75906b5f98687c98c96bbb9e959653ed7267b349

Observation 114cd04a-b137-463d-b1ef-9ca946f644e9 · outbound

This paper cites J Integr Circuits Syst 19:1–12.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance J Integr Circuits Syst 19:1–12

Reference 13

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.468692Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.172378Z digest=sha256:ae8bf341dc06f2a0459ab69e692911f7c09825cee643298fcf355f37e5d32005

Reference 14

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.457264Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.176227Z digest=sha256:b0c1d30d4041f8d728a95e5aa3c342a38376684d4112d7265242912de20db6ee

Observation a2141945-93cb-440e-b6fd-7d3a85ffe213 · outbound

This paper cites IEEE Trans Electron Devices 58:404–410.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Electron Devices 58:404–410

Reference 15

Resolution
metadata mismatch
raw_fallback, observed 2026-08-07T05:12:53.478568Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.180185Z digest=sha256:c216cae2f39cc198e21c9c81cb5dea223abc4501dcc2a32e10b3eacdb3bf3850

Observation fedb8d5f-db92-4543-856d-44869f3cb2e6 · outbound

This paper cites Silicon 14:10101–10113.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Silicon 14:10101–10113

Reference 16

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.445493Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.183924Z digest=sha256:60e3ef3ab501c18a850e2d98ecdd4180a90c3eb425b2395fbe5fbeded9d2007b

Observation 97c51b7d-fcf4-4f11-b2e1-9aa40b6dac37 · outbound

This paper cites Int J Numer Model Electron Networks, Devices Fields 30:.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Int J Numer Model Electron Networks, Devices Fields 30:

Reference 17

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.433826Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.187599Z digest=sha256:f77346490f72f40b3909e5f404a98e4e1b41611cdcdbeda2c575ef85d87ef149

Observation 3c7884e6-6564-4dbe-bfdb-d99c20be4ba1 · outbound

This paper cites J Comput Electron 15:763–769.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance J Comput Electron 15:763–769

Reference 18

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.420946Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.191216Z digest=sha256:5c7a760b95b920d0cae046285025379a5be495f6145e6921c6092c154d267164

Observation f5e80be7-a854-46f8-952d-934e4b787817 · outbound

This paper cites 2015 IEEE International WIE Co nference on Electrical and Computer Engineering (WIECON -ECE).

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance 2015 IEEE International WIE Co nference on Electrical and Computer Engineering (WIECON -ECE)

Reference 19

Resolution
verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.854763Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.195079Z digest=sha256:8d3a0b739f54a248052bfbebbe46ffc13408518f9e119494ccf006aa6109a5c8

Observation 4c25980a-9814-4ce2-a603-2c6fa648bdc1 · outbound

This paper cites IEEE Trans Electron Devices 61:2515 –.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Electron Devices 61:2515 –

Reference 20

Resolution
verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.842928Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.199012Z digest=sha256:1883148f73cdbd62237df694327ae8073157ffbded9cf9cace7825ebf8612f81

Observation 57020bcb-8fa8-4c56-b790-36a4bb5946f4 · outbound

This paper cites IEEE Trans Electron Devices 60:212 8–2134.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Electron Devices 60:212 8–2134

Reference 21

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metadata mismatch
raw_fallback, observed 2026-08-07T05:12:53.320625Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.206367Z digest=sha256:a57243e89cf0a4f7c8c1bb798282fe3d39af1ef2f261e3c1b57e71e080096423

Observation 9a280991-c0fe-41a6-ac30-aed96f07f7d9 · outbound

This paper cites IEEE Trans Electron Devices 55:1013 –1019.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Electron Devices 55:1013 –1019

Reference 22

Resolution
metadata mismatch
raw_fallback, observed 2026-08-07T05:12:53.252292Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.210209Z digest=sha256:f20e941bef2538bb8d5e9752e45e8f33b6b6199a2518e59696ffae3d710f2944

Observation 1f6907c1-2f3a-4bdf-9dc5-e9db2ba8e7e8 · outbound

This paper cites Curr Appl Phys 12:673 –677.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Curr Appl Phys 12:673 –677

Reference 23

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.409005Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.213977Z digest=sha256:b5d0e1ee2d12c0d351c36df077533ad90cc64cc9cf8b473a053c4648b1ce328c

Observation c3fe7026-dd8b-4627-a6b3-1904727bda82 · outbound

This paper cites IEEE Trans Electron Devices 58:80 –86.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Electron Devices 58:80 –86

Reference 24

Resolution
metadata mismatch
raw_fallback, observed 2026-08-07T05:12:53.185001Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.217767Z digest=sha256:7202b71d2ddafcb90e63ddd7c2d418bb2870cbd204fe4c138461da60d43a983b

Observation 1c514214-1fc1-4ee8-b5a5-ea66989f0992 · outbound

This paper cites IEEE Trans Electron Devices 58:1907 –1913.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Electron Devices 58:1907 –1913

Reference 25

Resolution
unresolved
no resolver link, observed 2026-08-07T05:12:52.221532Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-08-07T05:12:52.221532Z digest=sha256:93249b5dbe65ad4759b6441a2c9dbbecc4cc3a8b342da28d65f6097d5960234b

Observation 07c95ee6-ed23-4b82-a4bd-b9a9adfc324e · outbound

This paper cites IEEE Trans Electron Devices 60:92–96.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Electron Devices 60:92–96

Reference 26

Resolution
metadata mismatch
raw_fallback, observed 2026-08-07T05:12:53.035102Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.225461Z digest=sha256:ec8e14181822bfcf2111f420dfe2246608fed425bd8be01c057db6a94f0a63b2

Observation f1f707e1-dce8-4822-9002-4ee075954281 · outbound

This paper cites IEEE Trans Electron Devices 58:2122 –2126.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Electron Devices 58:2122 –2126

Reference 27

Resolution
metadata mismatch
raw_fallback, observed 2026-08-07T05:12:52.935786Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.229409Z digest=sha256:d073a6436612885c4a71e054323b0f693714e2100ace25cf4d67359a0241b5f7

Observation 76738cf4-958c-4316-9567-81b5c06dd673 · outbound

This paper cites Microelectronics J 129:105587.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Microelectronics J 129:105587

Reference 28

Resolution
unresolved
no resolver link, observed 2026-08-07T05:12:52.233049Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-08-07T05:12:52.233049Z digest=sha256:21f7d55de119731da2c2d3f2ed2711809da7306cb1329b84950589e2f85951ac

Observation 6f46f640-c4d8-4d96-b81e-554180bb43b0 · outbound

This paper cites Silicon 16:1273 –1282.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Silicon 16:1273 –1282

Reference 29

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.397105Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.237856Z digest=sha256:6dba0987c678808cb5e447bb0cd48b5685ede50c28dbad30fd9858857e9bec59

Reference 30

Resolution
verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.831121Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.241852Z digest=sha256:48f1ff6c1fd86bcdd35be86bb2acc1b3cab0f9036e84bf5e1d0c05a9ebb5f8b5

Observation c46138ca-0a41-4bb6-92eb-dfc54f4d68b7 · outbound

This paper cites 2017 14th IEEE India Council International Conference (INDICON).

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance 2017 14th IEEE India Council International Conference (INDICON)

Reference 31

Resolution
verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.819363Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.249712Z digest=sha256:0606dd41fd00aaf45dbe24a146ff7116e30d819029eadea576e188d0fa051d4d

Observation df1c81cf-7e17-465c-bdb6-64fb999b5d15 · outbound

This paper cites IEEE Trans Device Mater Reliab 16:227 –234.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Device Mater Reliab 16:227 –234

Reference 32

Resolution
metadata mismatch
raw_fallback, observed 2026-08-07T05:12:52.806412Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.253464Z digest=sha256:186fe9fd3fc8e9fa167200fb4664180f059f149683b96cc137c09fd05c48c8bf

Observation bd81d02d-244d-4cac-9d5f-a2303d061498 · outbound

This paper cites IEEE Trans Device Mater Reliab 17:245–252.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance IEEE Trans Device Mater Reliab 17:245–252

Reference 33

Resolution
metadata mismatch
raw_fallback, observed 2026-08-07T05:12:52.729785Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.257041Z digest=sha256:e94cf821b82e6d3872867dc39616bb9551588956d134e474271e83e68a42200f

Observation 15788376-ed7a-47fb-8bf1-09f02931256c · outbound

This paper cites Silicon 14:3185 –3197.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Silicon 14:3185 –3197

Reference 34

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.370758Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.261031Z digest=sha256:f5c7e8e176b21a7c08a420dbaed678b06640db1eb159ddad849d6e982d52ff55

Observation e5c02fc2-28b1-42ec-9efa-75229bfd39ac · outbound

This paper cites SILVACO Int, Santa Clara, CA, USA.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance SILVACO Int, Santa Clara, CA, USA

Reference 35

Resolution
verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.807383Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.265184Z digest=sha256:2aa7ae9a1b56be068b698338cdccb005dc257a4a4cf22b329acc0741ec5a4701

Reference 36

Resolution
malformed identifier
doi_truncated, observed 2026-08-07T05:12:52.357934Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.268825Z digest=sha256:a0c7675fab7c1e77eb37a4611cf20a31705aa89a111298ab6458d5a0b2fbd95c

Observation cc085edf-029e-420b-aaf8-0c6fb7d1e322 · outbound

This paper cites Superlattices Microstruct 102:284–.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Superlattices Microstruct 102:284–

Reference 37

Resolution
verified fuzzy
raw_fallback, observed 2026-08-07T05:12:53.795602Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.272679Z digest=sha256:2558a719c64d24f01f6a42bf124a98bb7c114540f7043984fd57726ec86d7fee

Observation 38fa7361-d95c-4a89-8fa3-ebd78aca81c0 · outbound

This paper cites Microelectron Reliab 55:31–37.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Microelectron Reliab 55:31–37

Reference 38

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.333036Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.280189Z digest=sha256:c7cac36d1798b221c57cb78381839e63ba3f154efc8b140073f76d0ab6970aed

Observation 5842de63-02d6-4b0f-8aaf-5c6554a97887 · outbound

This paper cites Solid State Electron 52:1318–1323.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Solid State Electron 52:1318–1323

Reference 39

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.320143Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.284482Z digest=sha256:68c8d5e960ecd17eab0596d1cf5040b7d3bf3cd68abea58adbace705c9bfd083

Observation 3255a7eb-0eb7-47c3-aec6-2aa896e6fc08 · outbound

This paper cites Micro and Nanostructures 195:207951.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Micro and Nanostructures 195:207951

Reference 40

Resolution
metadata mismatch
raw_fallback, observed 2026-08-07T05:12:52.655962Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.288339Z digest=sha256:b381d9d7b6c5f09dfea1dbad5138aefb72f0c1b17ca924e688ad2d5f36c3f321

Observation a2cfa18d-06b4-475b-ba8b-e1e5c151d64f · outbound

This paper cites an unresolved cited work.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Unresolved cited work

Reference 299

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.345348Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.276385Z digest=sha256:0e31f523b1e3889234bd8e41bef700e8ddee3fcec14382eeca5b03a6a59178b5

Observation 60b8fdc4-8366-4f18-872e-3414b54dc837 · outbound

This paper cites an unresolved cited work.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Unresolved cited work

Reference 1604

Resolution
verified exact
doi, observed 2026-08-07T05:12:52.383843Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.245622Z digest=sha256:8b776a53773b31d8020f3a6d834e73d8a8f61f6d1ffccc68a7be6247a3693c2a

Observation 9f014f80-3538-4b2d-93c3-de81d5bd7e71 · outbound

This paper cites an unresolved cited work.

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance Unresolved cited work

Reference 2522

Resolution
metadata mismatch
raw_fallback, observed 2026-08-07T05:12:53.405860Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-20T06:33:59.587034+00:00.

source=pdf_text observed=2026-08-07T05:12:52.202630Z digest=sha256:1746e0bd02e37ae80587443d4fae17e6cd063df9f1eb384aca097de4e876b61e

Pith citing papers

No inbound Pith citation observations are available.