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Enhanced Terahertz Thermoelectricity via Engineered van Hove Singularities and Nernst Effect in Moir\'e Superlattices
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Enhanced Terahertz Thermoelectricity via Engineered van Hove Singularities and Nernst Effect in Moir\'e Superlattices
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Thermoelectric materials, long explored for energy harvesting and thermal sensing, convert heat directly into electrical signals. Extending their application to the terahertz (THz) frequency range opens opportunities for low-noise, bias-free THz detection, yet conventional thermoelectrics lack the sensitivity required for practical devices. Thermoelectric coefficients can be strongly enhanced near van Hove singularities (VHS), though these are usually difficult to access in conventional materials. Here we show that moir\'e band engineering unlocks these singularities for THz optoelectronics. Using 2D moir\'e structures as a model system, we observe strong enhancement of the THz photothermoelectric response in monolayer and bilayer graphene superlattices when the Fermi level is tuned to band singularities. Applying a relatively small magnetic field further boosts the response through the THz-driven Nernst effect, a transverse thermoelectric current driven by the THz-induced temperature gradient. Our results establish moir\'e superlattices as a versatile platform for THz thermoelectricity and highlight engineered band structures as a route to high-performance THz optoelectronic devices.
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Cited by 1 Pith paper
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Van Hove singularity-driven giant Nernst signal in twisted double bilayer graphene
Van Hove singularities in twisted double bilayer graphene produce large, tunable, positive Nernst peaks at about 1 K, reproduced by semiclassical Boltzmann theory and a minimal two-band model.
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