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Direct determination of antiferroelectric-to-ferroelectric phase transition pathways in PbZrO$_3$ with Operando Electron Microscopy

T0 review · 4 major / 4 minor · reviewed 2026-08-04 · deepseek-v4-flash

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Pith's one-line read Field-driven switching in PbZrO3 passes through a transient monoclinic ferroelectric phase before reaching the tetragonal ferroelectric state, and the pathway is modulated by a near-substrate dead layer.

desk verdict A careful operando STEM study of PZO switching that gets the big picture right, but the claimed monoclinic intermediate phase needs stronger evidence than 2D projections and imported models. read the letter →

arxiv 2509.07194 v1 pith:3TICALGB submitted 2025-09-08 cond-mat.mtrl-sci

Menglin Zhu , Michael Xu , Louis Alaerts , Hao Pan , Colin Gilgenbach , Geoffroy Hautier , Lane W. Martin , James M. LeBeau This is my paper · ORCID
classification cond-mat.mtrl-sci PACS 77.80.-e68.37.Ma
keywords antiferroelectric-ferroelectrictransitionPbZrO3operandoSTEMfield-inducedphasemonoclinicintermediatedeadlayercoexistencehysteresis
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

Antiferroelectric lead zirconate (PbZrO3) is a leading candidate for energy-storage capacitors because an applied voltage can switch it between a non-polar, oppositely-ordered dipole state and a polar ferroelectric state, but the atomic steps of that switch have been inferred rather than seen. This paper reports live atomic-resolution electron microscopy of a working thin-film capacitor that resolves the switch directly: as bias rises, the antiparallel lead displacements and oxygen-octahedra rotations of the ground state are suppressed together, and the film passes through a transient monoclinic ferroelectric phase before settling into a rhombohedral, then tetragonal, ferroelectric state. The authors argue this four-stage AFE_O -> FE_M -> FE_R -> FE_T pathway is intrinsic to field-driven switching, not a beam artifact, and that local energetics, such as substrate clamping, dislocations, and a near-substrate "dead layer," modulate where and when each phase forms. If correct, it gives device designers an atomistic blueprint for tuning the hysteresis loop and the energy-release profile of antiferroelectric capacitors. The paper also shows a dynamic phase front where antiferroelectric and ferroelectric phases interconvert reversibly, letting the relative energies of the intermediate phases be ranked under operating conditions.

What carries the argument

The identifying machinery is the coupled pair of order parameters of the AFE ground state, antiparallel Pb displacements (up-up-down-down along <110>_PC) and antiferrodistortive oxygen octahedral rotations, tracked unit-cell-by-unit-cell in simultaneously acquired ADF and dDPC images. The intermediate phase is recognized by its checkerboard rotation pattern and monoclinic-type superlattice reflections (MPb/MO-type modulations), the same signatures used at ferroelectric/antiferroelectric boundaries in PZT. The operando biasing geometry, a focused-ion-beam-prepared capacitor on a MEMS chip with the electric field applied along the film normal, is what makes the pathway observable under device-

What would settle it

Collect three-dimensional reciprocal-space data (for example, precession-assisted or tomographic nano-beam electron diffraction) at the applied bias where FE_M is claimed, and test whether the full reflection set matches the monoclinic FE_M model rather than a strained AFE_O variant or a superposition of AFE_O and FE_R domains. If the 1/4{110}-type superlattice reflections and checkerboard rotation pattern are reproduced without the monoclinic phase, the four-stage pathway claim collapses.

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Extended reading notes

Core claim

Under an applied electric field, PbZrO3 does not jump directly from its antiferroelectric ground state to a single ferroelectric state. The authors show that the two structural order parameters that define the ground state, the up-up-down-down antiparallel lead displacements and the antiferrodistortive oxygen octahedral rotations, are suppressed together, and their competition with polar distortions creates a monoclinic bridging ferroelectric (FE_M) that retains residual antiparallel cation canting and checkerboard octahedral rotations. Beyond that, the film becomes rhombohedral (FE_R), then tetragonal (FE_T) as the field continues to align dipoles out of plane. This sequence is established

Load-bearing premise

The load-bearing premise is that the intermediate FE_M phase is a distinct phase identified from a handful of superlattice reflections in two-dimensional projected images and from averaged displacement and rotation motifs, with its structural model imported from prior studies of doped and ultra-thin PZT/PZO; if those reflections instead come from a strained antiferroelectric variant or from overlapping AFE_O and FE_R domains, the four-stage pathway reduces to a two-phase coex

Editorial extensions

If this is right

  • If the four-state pathway is correct, thermodynamic and phase-field models of PZO switching must include the monoclinic FE_M state as a metastable or saddle-point phase on the AFE-to-FE route, not just a two-phase coexistence.
  • The FE_M phase retains AFE-like antiparallel canting and octahedral rotations, so its checkerboard and superlattice signatures can be used to detect incipient switching in other antiferroelectrics before full polarization reversal.
  • The depth-dependent dead layer means the effective switchable volume of a PZO capacitor is smaller than the nominal film thickness; device metrics such as stored energy density should be normalized to the active region.
  • Coercivity and remanent polarization in these films can arise from sub-lattice polarization shifts and local structural distortions, not only from domain-wall motion or pinning.
  • Reversible phase interconversion at the transition front gives an experimental handle to rank intermediate-phase energetics: near the front, FE_M sits lower in energy than FE_R.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the FE_M assignment from projected reflections is confirmed by three-dimensional diffraction or quantitative image simulation, the same live-bias approach could be extended to other antiferroelectrics to test whether a monoclinic bridge is a general feature of AFE-to-FE switching.
  • The dead-layer mechanism suggests a defect-engineering lever: patterning or modifying dislocations near the substrate could shift the internal field profile and turn the dead layer into a tunable switching region.
  • Because the transition front moves only 30-40 nm for a 400 kV/cm bias step, tracking the front position versus bias can serve as a local probe of the internal electric-field profile, connecting microstructure to macroscopic hysteresis.
  • The observed reversible beam-induced fluctuations at the front imply that stochastic switching signals in operating devices may carry a fingerprint of the local energy landscape, an avenue for using fluctuation statistics to infer phase stability.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 4 minor

Summary. The manuscript reports operando scanning transmission electron microscopy (STEM) biasing experiments on 100-nm-thick PbZrO3 (PZO) thin-film capacitors, tracking the antiferroelectric-to-ferroelectric (AFE-to-FE) transition at atomic resolution. The authors identify a four-stage pathway, AFE_O → FE_M → FE_R → FE_T, as the applied field increases, with FE_M being a monoclinic-like intermediate phase exhibiting residual antipolar lead displacements and octahedral rotations. They further observe depth-dependent heterogeneity, including a 'dead layer' near the substrate, and a dynamic transition front at which AFE and FE phases coexist. Based on the front position and its fluctuations under bias, they infer the relative energies of the intermediate phases and the presence of a large internal field arising from substrate clamping and dislocation gradients. The central claim is that the transition proceeds via genuine, field-stabilized intermediate phases that are intrinsic to the switching process, not artifacts of electron-beam irradiation or two-phase coexistence.

Significance. If the four-stage pathway is correct, the work provides a long-sought direct atomic-scale view of the AFE-to-FE transition under device-relevant bias, resolving whether intermediate phases are intrinsic to field-driven switching. The experimental strengths are substantial: the same-field-of-view tracking across a full bias cycle, the explicit electron-dose checks, the correlation of NBED with macroscopic polarization, and the careful distinction of reversible dynamic behavior from irreversible beam damage. These features make the paper a strong candidate for a high-impact experimental contribution. However, the identification of the pivotal FE_M phase rests on qualitative interpretation of a few superlattice reflections in 2D projection and on analogy to prior work in doped PZT and ultra-thin PZO; the energy-ordering and internal-field claims also involve a degree of circularity. The significance of the findings is therefore conditional on strengthening these structural and inferential points.

major comments (4)
  1. [Probing Dynamic Phase Equilibria, Fig. 5e–g] The identification of FE_M as a distinct monoclinic phase is load-bearing for the central four-stage pathway, but the evidence is not definitive. The text cites 'monoclinic-type superlattice reflections in its discrete Fourier transform' without indexing them or showing the transform, and the averaged motif is consistent with several structural possibilities. In a 2D projection through a thin foil, the same Fourier spots and checkerboard rotation pattern could be produced by a two-phase mixture of AFE_O and FE_R domains within the field of view, or by a strained AFE variant with canted displacements. To support the claim that FE_M is a homogeneous thermodynamic phase, the authors should provide (i) indexed reflections with a clear assignment to a structural model, (ii) quantitative image simulation of ADF/dDPC images from the proposed FE_M structure matched to experiment, and/or (iii) 3D
  2. [Probing Dynamic Phase Equilibria, 'beam-induced charging and heating'] The claim that FE_M has lower relative energy than FE_R (main text: 'FE_M exhibits a lower relative energy when compared to FE_R') is inferred from the spatial gradient of octahedral rotations and from the transition-front behavior. However, the same front-position data are used to infer the internal-field profile (Fig. 5e–g), and then the front behavior is attributed to that inferred field. This creates a circularity: the internal field is an ad-hoc construct, and the energy ranking is read off from the very data used to define the field. An independent constraint—for example, a quantitative model of how the front position depends on applied field and an assumed internal-field profile, or direct calorimetric/structural evidence of energy differences—is needed to break the circularity. As written, the relative-energy comparison is suggestive but not uniquely determined.
  3. [Fig. 4e–g and Depth-Dependent Film Response] The manuscript acknowledges that 'beam-induced charging and heating effects can transiently disturb the phase boundary' and that the transition-front width increases at higher electron dose (Supplementary Fig. S4). Since the dynamic coexistence and front fluctuations are used to infer phase stability and energy ordering, the demonstration that these effects are small and non-directional is essential. A lower-dose series is a useful check, but it does not quantify the perturbation magnitude or prove that the inferred energy ordering is unchanged in the zero-dose limit. The authors should either provide a dose-series extrapolation showing that the front-width and phase-occupancy statistics converge, or explicitly discuss the uncertainty this introduces into the energy-ordering claim. As it stands, the beam-perturbation channel weakens the strength of the 'relative energies compared as a fu
  4. [Minor comments] The 'dead layer' interpretation at the bottom electrode is based on reduced 1/4{110} superlattice intensity and lattice-parameter variations that remain pinned under bias. The authors rule out an electric-field gradient or depolarization field based on symmetric electrode configuration, but this is an indirect argument. A more direct test would be to measure the local field profile (e.g., via Kikuchi lines or position-dependent lattice strain) or to compare with phase-field simulations that include the proposed clamping/dislocation internal field. As written, the internal-field mechanism is plausible but not uniquely established; other mechanisms, such as oxygen vacancy accumulation near the substrate, could produce similar depth-dependent response. This does not invalidate the central pathway, but it is a secondary claim that should be softened or further supported.
minor comments (4)
  1. There are repeated typos: 'field field' and 'electric electric field' in the 'Atomic-Scale Phase Transition Pathway' section. Please proofread.
  2. The caption states 'mean-subtracted displacements for the FEM motif is shown in the inset in (b), with a saturation range of [0, 2] pm.' The units and the choice of saturation range should be clarified; also, the inset is difficult to discern in the figure as provided.
  3. The details of the dDPC imaging and displacement/rotation extraction are referred to the Supplementary Information but not described in the main text. For a general readership, at least a brief explanation of how octahedral rotations are measured from dDPC images and how errors are estimated should be included in the main text or a Methods section.
  4. Refs. 11 and 15 are central to the FE_M identification, but they are not cited with specific structural parameters that would allow a quantitative comparison. Please provide the relevant details (space group, lattice parameters, reflection indices) in the text or in a table.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the AFE-to-FE pathway is an operando measurement interpreted against external structural references.

full rationale

The paper's central claim (AFE_O→FE_M→FE_R→FE_T) is an operando STEM observation, not a derivation from a fitted model. The four motifs are extracted by averaging experimental ADF/dDPC images with similar structural features; the AFE and FE_R/FE_T assignments are checked against external structural references (Sawaguchi; Teslic & Egami; synchrotron XRD), and the FE_M identification is made by analogy with published PZT/PZO intermediate phases (Fu et al.; Jiang et al.), not by a self-citation that presupposes the pathway. The only potentially self-referential element is the phase-front analysis: the same front-position data are used to approximate the internal-field profile and to define a metastability width. That is a dual use of one observable, not a reduction in which one conclusion is assumed to prove the other; the front position versus applied field is a measured input, and the width at fixed field is a separately computed statistic. No fitted parameter is renamed as a prediction, and no uniqueness theorem from the authors is invoked. Therefore there is no significant circularity; the principal vulnerability of the paper is the structural evidence for FE_M (2D projection, no quantitative image simulation or 3D verification), which is a correctness/evidence concern, not a circularity one.

Assumptions & free parameters 0 free parameters · 6 assumptions · 0 invented entities

The central claims rest on standard structural models of PZO and on the transfer of the FE_M model from prior PZT/thin-film studies. Two verifiable assumptions are made about the experimental environment: the local field equals the nominal applied field, and electron-beam perturbations are small enough not to bias the inferred energetics. No new particles, forces, or conserved quantities are introduced.

assumptions (6)
  • domain assumption The ground state of PbZrO3 is orthorhombic AFE with ↑↑↓↓ Pb displacements and a- a- c0 octahedral rotations (Fig 1d-e, refs 25, 26).
    Standard structural model from neutron and X-ray diffraction, used as the reference for all displacement and rotation measurements.
  • domain assumption 1/4 110 superlattice reflections in NBED and in Fourier transforms uniquely indicate antiparallel Pb displacements.
    Standard interpretation in the AFE literature (refs 25, 31), used to map AFE order and the transition front.
  • domain assumption The monoclinic FE_M phase from doped PZT (ref 11) and thin-film PZO (ref 15) is identical to the intermediate phase observed here, so those structural models apply to pure PZO under electric field.
    The paper states the observed reflections are 'reminiscent of' those in PZT and draws the structural and energetic interpretation from those systems; this cross-system identification is not independently derived in the present work.
  • domain assumption The local electric field at the imaged region is approximated by the applied bias divided by the nominal 100 nm film thickness (1 V = 100 kV/cm).
    All voltage thresholds, hysteresis statements, and the front-shift estimate (30-40 nm per 400 kV/cm) rely on this uniform-field proxy; local field distortion and screening in the notched lamella are not quantified.
  • ad hoc to paper Electron-beam-induced charging and heating at the transition front are small, reversible, and non-directional perturbations, so the observed phase interconversion and inferred energy ranking reflect the intrinsic film response.
    The paper explicitly states beam effects 'transiently disturb the phase boundary' and attributes the dynamics partly to them, yet uses the same observations to rank phase energies; the lower-dose control is only referenced in the SI, not shown in the main text.
  • ad hoc to paper A static internal field that opposes the applied field arises from substrate-clamping relaxation and dislocation gradients near the interface, producing the observed dead layer and transition front.
    The internal field profile is inferred from the front shift and is not measured directly; alternative origins (field gradients, surface depolarization) are ruled out only by symmetry arguments.

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Cite this review

Pith. "Pith review of Direct determination of antiferroelectric-to-ferroelectric phase transition pathways in PbZrO$_3$ with Operando Electron Microscopy." pith.science (2026). https://pith.science/paper/3TICALGB

@misc{pith2026250907194,
  author       = {Pith},
  title        = {Pith review of: Direct determination of antiferroelectric-to-ferroelectric phase transition pathways in PbZrO$_3$ with Operando Electron Microscopy},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/3TICALGB}},
  note         = {Machine review of arXiv:2509.07194}
}
read the original abstract

Under a sufficiently high applied electric field, a non-polar antiferroelectric material, such as \ce{PbZrO3}, can undergo a rapid transformation to a polar ferroelectric phase. While this behavior is promising for energy storage and electromechanical applications, a complete understanding of the atomic-scale mechanisms governing the phase transition remain elusive. Here, we employ \textit{operando} scanning transmission electron microscopy electric field biasing to directly resolve the antiferroelectric-to-ferroelectric transition pathway in \ce{PbZrO3} thin films under device-relevant conditions. Atomic-resolution imaging reveals a multi-step transition that includes several metastable phases. Complementary nano-beam electron diffraction and atomic scale analysis further show that this pathway and its end states can be modulated, leading to the formation of a \quotes{dead layer} near the substrate with suppressed switching behavior. Taking advantage of this depth-dependent heterogeneity, dynamic phase transformations are observed between coexisting antiferroelectric and metastable ferroelectric phases. At this dynamic transition front, repeated phase interconversion is shown to be driven by competing internal (due to substrate clamping and extended defects) and external fields, allowing the relative energies of intermediate phases to be compared as a function of electric field. This work highlights the critical role of local energetics in phase stability and provides key experimental insights into field-induced phase transitions, guiding the design of antiferroelectric-based devices.

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Works this paper leans on

45 extracted references · 44 canonical work pages

  1. [1]

    Theory of antiferroelectric crystals.Phys

    Kittel, C. Theory of antiferroelectric crystals.Phys. Rev.82, 729–732 (1951)

    work page 1951

  2. [2]

    A., Fan, Z., Reaney, I., Chen, L.-Q

    Randall, C. A., Fan, Z., Reaney, I., Chen, L.-Q. & Trolier-McKinstry, S. Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications.J. Am. Ceram. Soc.104, 3775–3810 (2021)

    work page 2021

  3. [3]

    Zhuo, F.et al.Perspective on antiferroelectrics for energy storage and conversion applications. Chin. Chem. Lett.32, 2097–2107 (2021)

    work page

  4. [4]

    Si, Y .et al.Antiferroelectric oxide thin-films: Fundamentals, properties, and applications.Prog. Mater . Sci.142, 101231 (2024)

    work page 2024

  5. [5]

    Hao, X., Zhai, J., Kong, L. B. & Xu, Z. A comprehensive review on the progress of lead zirconate- based antiferroelectric materials.Prog. Mater . Sci.63, 1–57 (2014)

    work page 2014

  6. [6]

    Avdeev, M.et al.Pressure-induced ferroelectric to antiferroelectric phase transition inPb0.99(Zr0.95Ti0.05)0.98Nb0.02O3.Phys. Rev. B Condens. Matter Mater . Phys.73, 064105 (2006)

    work page 2006

  7. [7]

    D.et al.Pressure, temperature, and electric field dependence of phase transformations in niobium modified 95/5 lead zirconate titanate.J

    Dong, W. D.et al.Pressure, temperature, and electric field dependence of phase transformations in niobium modified 95/5 lead zirconate titanate.J. Appl. Phys.117, 244104 (2015)

    work page 2015

  8. [8]

    Liu, C.et al.Low voltage-driven high-performance thermal switching in antiferroelectric PbZrO3 thin films.Science382, 1265–1269 (2023)

    work page 2023

Show all 45 references
  1. [9]

    Mater .23, 944–950 (2024)

    Pan, H.et al.Clamping enables enhanced electromechanical responses in antiferroelectric thin films.Nat. Mater .23, 944–950 (2024)

    2024

  2. [10]

    & Bellaiche, L

    Xu, B., Hellman, O. & Bellaiche, L. Order-disorder transition in the prototypical antiferroelectric PbZrO3.Phys. Rev. B.100, 020102 (2019)

    2019

  3. [11]

    Commun.13, 1390 (2022)

    Fu, Z.et al.Atomic reconfiguration among tri-state transition at ferroelectric/antiferroelectric phase boundaries in pb(zr,ti)O3.Nat. Commun.13, 1390 (2022)

    2022

  4. [12]

    Zhang, H.et al.Finite-temperature properties of the antiferroelectric perovskite PbZrO3 from a deep-learning interatomic potential.Phys. Rev. B.110(2024)

    2024

  5. [13]

    Waghmare, U. V . & Rabe, K. M. Lattice instabilities, anharmonicity and phase transitions in PbZrO3from first principles.Ferroelectrics194, 135–147 (1997)

    1997

  6. [14]

    & Huang, H

    Xu, K., Shi, X., Shao, C., Dong, S. & Huang, H. Design of polar boundaries enhancing negative electrocaloric performance by antiferroelectric phase-field simulations.Npj Comput. Mater .10, 1–8 (2024)

    2024

  7. [15]

    Jiang, R.-J.et al.A roadmap for ferroelectric-antiferroelectric phase transition.Nano Lett.24, 11714–11721 (2024)

    2024

  8. [16]

    Mater .32, e1907208 (2020)

    Wei, X.-K.et al.An unconventional transient phase with cycloidal order of polarization in energy-storage antiferroelectric PbZrO3.Adv. Mater .32, e1907208 (2020)

    2020

  9. [17]

    Commun.16, 4263 (2025)

    Si, Y .et al.Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films.Nat. Commun.16, 4263 (2025)

    2025

  10. [18]

    Cai, Y .et al.TEM study of superstructure in a perovskite lead lanthanum zirconate stannate titanate ceramic.Acta Mater .51, 6429–6436 (2003)

    2003

  11. [19]

    T., Hicks, J

    Blue, C. T., Hicks, J. C., Park, S.-E., Yoshikawa, S. & Cross, L. E.In situx-ray diffraction study of the antiferroelectric–ferroelectric phase transition in PLSnZT.Appl. Phys. Lett.68, 2942–2944 13 (1996)

    1996

  12. [20]

    L.et al.Electron-beam-induced ferroelectric domain behavior in the transmission electron microscope: Toward deterministic domain patterning.Phys

    Hart, J. L.et al.Electron-beam-induced ferroelectric domain behavior in the transmission electron microscope: Toward deterministic domain patterning.Phys. Rev. B Condens. Matter94, 174104 (2016)

    2016

  13. [21]

    Wei, X.-K., Jia, C.-L., Roleder, K., Dunin-Borkowski, R. E. & Mayer, J. In situ observation of point-defect-induced unit-cell-wise energy storage pathway in antiferroelectric PbZrO 3.Adv. Funct. Mater .31, 2008609 (2021)

    2021

  14. [22]

    Calderon, S., 5thet al.Atomic-scale polarization switching in wurtzite ferroelectrics.Science 380, 1034–1038 (2023)

    2023

  15. [23]

    F., Li, P

    Egerton, R. F., Li, P. & Malac, M. Radiation damage in the TEM and SEM.Micron35, 399–409 (2004)

    2004

  16. [24]

    & Pawlak, J

    Kryshtal, A., Mielczarek, M. & Pawlak, J. Effect of electron beam irradiation on the temperature of single AuGe nanoparticles in a TEM.Ultramicroscopy233, 113459 (2022)

    2022

  17. [25]

    & Hoshino, S

    Sawaguchi, E., Maniwa, H. & Hoshino, S. Antiferroelectric structure of lead zirconate.Phys. Rev.83, 1078–1078 (1951)

    1951

  18. [26]

    & Egami, T

    Teslic, S. & Egami, T. Atomic structure of PbZrO3 determined by pulsed neutron diffraction. Acta Crystallogr . B54, 750–765 (1998)

    1998

  19. [27]

    Liu, H.et al.Electric-field-induced structure and domain texture evolution in PbZrO3-based antiferroelectric by in-situ high-energy synchrotron X-ray diffraction.Acta Mater .184, 41–49 (2020)

    2020

  20. [28]

    & Cross, L

    Park, S.-E., Pan, M.-J., Markowski, K., Yoshikawa, S. & Cross, L. E. Electric field induced phase transition of antiferroelectric lead lanthanum zirconate titanate stannate ceramics.J. Appl. Phys. 82, 1798–1803 (1997)

    1997

  21. [29]

    Strukov, B. A. & Levanyuk, A. P.Ferroelectric phenomena in crystals: Physical foundations (Springer, Berlin, Germany, 2011)

    2011

  22. [30]

    Zhao, C., Wu, W., Wang, H. & Wu, J. Site engineering and polarization characteristics in (Ba1- yCay)(Ti1-xHfx)O3 lead-free ceramics.J. Appl. Phys.119, 024108 (2016)

    2016

  23. [31]

    Commun.15, 3438 (2024)

    Yu, Z.et al.Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO3 by strain-mediated phase separation.Nat. Commun.15, 3438 (2024)

    2024

  24. [32]

    Jiang, R.-J.et al.Atomic insight into the successive antiferroelectric-ferroelectric phase transition in antiferroelectric oxides.Nano Lett.23, 1522–1529 (2023)

    2023

  25. [33]

    Singh, D. J. Structure and energetics of antiferroelectric PbZrO3.Phys. Rev. B Condens. Matter 52, 12559–12563 (1995)

    1995

  26. [34]

    Roy Chaudhuri, A.et al.Epitaxial strain stabilization of a ferroelectric phase in PbZrO3thin films.Phys. Rev. B Condens. Matter Mater . Phys.84, 054112 (2011)

    2011

  27. [35]

    Liu, H.et al.Correlating hidden local structural distortion with antiferroelectric-ferroelectric transition in PbZrO3-based perovskites.Acta Mater .243, 118505 (2023)

    2023

  28. [36]

    Mater .1–5 (2025)

    Liu, Y .et al.V ortices and antivortices in antiferroelectric PbZrO3.Nat. Mater .1–5 (2025)

    2025

  29. [37]

    Acharya, M.et al.Direct measurement of inverse piezoelectric effects in thin films using laser doppler vibrometry.Phys. Rev. Appl.20(2023). 14

    2023

  30. [38]

    Commun.5, 3031 (2014)

    Wei, X.-K.et al.Ferroelectric translational antiphase boundaries in nonpolar materials.Nat. Commun.5, 3031 (2014)

    2014

  31. [39]

    Fengler, F. P. G.et al.Domain pinning: Comparison of hafnia and PZT based ferroelectrics.Adv. Electron. Mater .3, 1600505 (2017)

    2017

  32. [40]

    Microstructures5(2025)

    Li, Z.et al.The effect of dislocations on phase transition in PbZrO 3-based antiferroelectrics. Microstructures5(2025)

    2025

  33. [41]

    Ultramicroscopy214, 112994 (2020)

    Padgett, E.et al.The exit-wave power-cepstrum transform for scanning nanobeam electron diffraction: robust strain mapping at subnanometer resolution and subpicometer precision. Ultramicroscopy214, 112994 (2020)

    2020

  34. [42]

    K., Chang, C.-M., Lisenkov, S

    Mani, B. K., Chang, C.-M., Lisenkov, S. & Ponomareva, I. Critical thickness for antiferroelectricity in PbZrO3.Phys. Rev. Lett.115, 097601 (2015)

    2015

  35. [43]

    Alloys Compd.812, 152090 (2020)

    Kajewski, D.et al.Defect-induced intermediate phase appearance in a single PbZrO3 crystal.J. Alloys Compd.812, 152090 (2020)

    2020

  36. [44]

    Liu, Y .et al.Translational boundaries as incipient ferrielectric domains in antiferroelectric PbZrO {3}.Phys. Rev. Lett.130, 216801 (2023)

    2023

  37. [45]

    & Dickey, E

    Calderon, S., Skidmore, C., Maria, J.-P. & Dickey, E. C. Domain nucleation and growth in an epitaxially grown wurtzite ferroelectric.Adv. Funct. Mater .e10493 (2025). 15 Acknowledgments This research was sponsored by the Army Research Laboratory and was accomplished under Coop...

    2025

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