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arxiv: 2510.15503 · v1 · submitted 2025-10-17 · ❄️ cond-mat.mes-hall · cond-mat.mtrl-sci

Gate-tunable Josephson diodes in magic-angle twisted bilayer graphene

A. Rothstein , R. J. Dolleman , L. Klebl , A. Achtermann , F. Volmer , K. Watanabe , T. Taniguchi , F. Hassler
show 3 more authors
L. Banszerus B. Beschoten C. Stampfer
This is my paper

Pith reviewed 2026-05-18 06:32 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall cond-mat.mtrl-sci
keywords Josephson diodetwisted bilayer graphenegate-tunablekinetic inductancesupercurrentJosephson junctionmoiré filling factornon-uniform current distribution
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The pith

Gate voltage can tune and reverse the polarity of Josephson diodes in magic-angle twisted bilayer graphene at fixed magnetic fields.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

This paper reports measurements on two adjacent gate-defined Josephson junctions in magic-angle twisted bilayer graphene near a moiré filling factor of -2. Both junctions display a strong Josephson diode effect in which the supercurrent flows more easily in one direction than the other. The authors attribute this to the material's large kinetic inductance together with an uneven distribution of supercurrent that varies locally due to small changes in the twist angle. Because the effect responds to gate voltage, the diode efficiency can be adjusted and the preferred direction can be flipped without altering the magnetic field. This matters for building superconducting devices where one wants to control current direction electrically.

Core claim

The central discovery is that the nonreciprocal supercurrent in these junctions arises from large kinetic inductance combined with non-uniform supercurrent distribution shaped by microscopic inhomogeneities such as twist angle variations. This leads to gate-tunable diode efficiency and the ability to reverse diode polarity at fixed magnetic fields, with adjacent junctions showing different interference patterns as a result of their local environments.

What carries the argument

The gate-tunable Josephson diode effect produced by large kinetic inductance and non-uniform supercurrent distribution due to twist angle inhomogeneities

If this is right

  • The nonreciprocal supercurrent can be tuned by gate voltage.
  • Diode efficiency can be adjusted and polarity reversed at fixed magnetic fields.
  • Adjacent junctions show different diode behavior due to local microscopic inhomogeneities.
  • This provides potential routes for tailoring Josephson diode performance in superconducting quantum circuits.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Electrically controllable Josephson diodes could be useful in quantum circuits where applying local magnetic fields is impractical.
  • The findings may generalize to other two-dimensional superconducting systems with strong kinetic inductance and moiré patterns.
  • Varying the gate to change carrier density could serve as a test to modulate the kinetic inductance and confirm its role in the diode effect.

Load-bearing premise

Microscopic inhomogeneities such as twist angle variations primarily shape the non-uniform supercurrent and drive the diode behavior rather than junction geometry or other disorder effects.

What would settle it

If the supercurrent distribution were found to be uniform across the junction or if the diode polarity showed no dependence on gate voltage while the magnetic field is held constant, the explanation based on inhomogeneities and kinetic inductance would be ruled out.

Figures

Figures reproduced from arXiv: 2510.15503 by A. Achtermann, A. Rothstein, B. Beschoten, C. Stampfer, F. Hassler, F. Volmer, K. Watanabe, L. Banszerus, L. Klebl, R. J. Dolleman, T. Taniguchi.

Figure 1
Figure 1. Figure 1: FIG. 1. (a) Schematic of the device and the measurement setup. [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: (a) (see Supporting Information for line cuts taken in all regions). Independent of the presence of the JD effect, a residual resistance is observed at finite I, in￾dependent of VL or VR, as indicated by the transition from dark to lighter blue regions in [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3. (a) Magnetospectroscopy measurements taken in the regi [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4. (a) Extracted shift in magnetic field [PITH_FULL_IMAGE:figures/full_fig_p005_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5. (a) Schematic illustration of different twist angle dom [PITH_FULL_IMAGE:figures/full_fig_p006_5.png] view at source ↗
read the original abstract

We report low-temperature measurements of two adjacent, gate-defined Josephson junctions (JJs) in magic-angle twisted bilayer graphene (MATBG) at a moir\'e filling factor near $\nu = -2$. We show that both junctions exhibit a prominent, gate-tunable Josephson diode effect, which we explain by a combination of large kinetic inductance and non-uniform supercurrent distribution. Despite their proximity, the JJs display differences in their interference patterns and different diode behavior, underscoring that microscopic inhomogeneities such as twist angle variations shape the non-uniform supercurrent and drive the diode behavior. As a result, the nonreciprocal supercurrent can be tuned by gate voltage, enabling tuning of the diode efficiency and even reversing the polarity at fixed magnetic fields. Our findings offer potential routes for tailoring Josephson diode performance in superconducting quantum circuits.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 1 minor

Summary. The manuscript reports low-temperature transport measurements on two adjacent, gate-defined Josephson junctions fabricated in magic-angle twisted bilayer graphene near moiré filling factor ν = −2. Both junctions exhibit a prominent Josephson diode effect whose efficiency and polarity can be tuned by gate voltage, including polarity reversal at fixed magnetic field. The authors attribute the diode behavior to the combination of large kinetic inductance and a non-uniform supercurrent distribution, with the latter ascribed to microscopic inhomogeneities such as twist-angle variations; this interpretation is supported by observed differences in Fraunhofer interference patterns between the two nearby junctions.

Significance. If the proposed mechanism is substantiated, the work is significant because it demonstrates gate-tunable nonreciprocity in a highly tunable moiré superconductor and identifies inhomogeneity as a controllable ingredient for Josephson diode performance. The experimental observation of polarity reversal and differing diode characteristics in adjacent junctions constitutes a concrete advance for superconducting quantum-circuit applications. The authors receive credit for the clear experimental demonstration of gate control over the diode effect.

major comments (2)
  1. [Abstract / diode-effect explanation] Abstract and the paragraph explaining the diode effect: the central claim that twist-angle variations produce the non-uniform supercurrent distribution (and thereby the gate-tunable diode behavior) is load-bearing yet rests only on differences in interference patterns between the two junctions. No quantitative modeling of the expected supercurrent profile from measured or simulated twist-angle maps is provided, nor is a comparison made against alternative inhomogeneity sources such as strain, dielectric disorder, or edge scattering. This leaves the proposed mechanism for gate control and polarity reversal without direct experimental support.
  2. [Model / data comparison] Section describing the kinetic-inductance plus non-uniform-current model: the manuscript invokes standard kinetic-inductance concepts but does not show explicit calculations or fits that quantitatively reproduce the measured diode efficiency, its gate dependence, or the observed polarity reversal. Without such modeling, it is unclear whether the combination of large kinetic inductance and inhomogeneity accounts for the data or whether additional factors are required.
minor comments (1)
  1. [Figures] Figure captions and axis labels should explicitly state the range of gate voltages and magnetic fields over which the diode efficiency and polarity reversal are demonstrated, to allow readers to assess the tuning range directly.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their thorough review and positive evaluation of our work. We address each major comment below and have made revisions to the manuscript to strengthen the presentation of our results and interpretations.

read point-by-point responses

  1. Referee: [Abstract / diode-effect explanation] Abstract and the paragraph explaining the diode effect: the central claim that twist-angle variations produce the non-uniform supercurrent distribution (and thereby the gate-tunable diode behavior) is load-bearing yet rests only on differences in interference patterns between the two junctions. No quantitative modeling of the expected supercurrent profile from measured or simulated twist-angle maps is provided, nor is a comparison made against alternative inhomogeneity sources such as strain, dielectric disorder, or edge scattering. This leaves the proposed mechanism for gate control and polarity reversal without direct experimental support.

    Authors: We agree that a more quantitative link between the observed differences in Fraunhofer patterns and specific inhomogeneity sources would strengthen the manuscript. The differing interference patterns in the two adjacent junctions, which are fabricated in close proximity, provide strong evidence for local microscopic variations. In the revised version, we have expanded the discussion to include a qualitative comparison of how twist-angle variations would affect the supercurrent distribution compared to strain or dielectric disorder, based on known sensitivities in MATBG. We note that direct twist-angle mapping via STM or similar techniques was not performed in this study, but the gate-tunability and polarity reversal are consistent with changes in the kinetic inductance interacting with a fixed non-uniform profile. We have added this clarification to the abstract and main text. revision: partial

  2. Referee: [Model / data comparison] Section describing the kinetic-inductance plus non-uniform-current model: the manuscript invokes standard kinetic-inductance concepts but does not show explicit calculations or fits that quantitatively reproduce the measured diode efficiency, its gate dependence, or the observed polarity reversal. Without such modeling, it is unclear whether the combination of large kinetic inductance and inhomogeneity accounts for the data or whether additional factors are required.

    Authors: We thank the referee for pointing this out. In the revised manuscript, we have added explicit calculations in the main text and supplementary information. Using a simple model of kinetic inductance combined with a non-uniform supercurrent distribution (parameterized by an asymmetry factor), we show that the diode efficiency η = (I_c^+ - I_c^-)/(I_c^+ + I_c^-) can reach values up to 0.3-0.5 for realistic kinetic inductance values in MATBG, and that gate-dependent changes in the inductance can lead to polarity reversal at fixed B field. These calculations qualitatively reproduce the observed gate dependence and the differences between the two junctions. We have included fits to the data where possible. revision: yes

Circularity Check

0 steps flagged

No circularity: experimental observations explained via standard concepts

full rationale

This is an experimental report on gate-tunable Josephson diodes in MATBG. The explanation invokes large kinetic inductance combined with non-uniform supercurrent distribution, inferred from measured differences in interference patterns between adjacent junctions. No equations, derivations, or fitted parameters are presented that reduce by construction to the inputs. No self-citation chains or ansatzes are load-bearing for the central claim. The attribution to twist-angle inhomogeneities is an interpretive inference from proximity and pattern differences rather than a self-referential definition or renaming. The paper remains self-contained against external benchmarks of Josephson junction physics.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The central claim rests on standard assumptions of superconducting transport in 2D materials and the validity of interpreting diode asymmetry via kinetic inductance and supercurrent distribution; no new entities are postulated and no free parameters are explicitly fitted in the abstract.

axioms (1)
  • domain assumption Standard assumptions of Josephson junction physics and kinetic inductance in graphene-based superconductors hold without additional corrections.
    Invoked when attributing the diode effect to kinetic inductance and non-uniform supercurrent (abstract explanation paragraph).

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