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REVIEW 4 major objections 5 minor 41 references

Single-shot laser-pulse-induced magnetization reversal in CoFeB/MgO-based magnetic tunnel junctions

T0 review · 4 major / 5 minor · reviewed 2026-08-04 · deepseek-v4-flash

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Pith's one-line read A single laser pulse can flip a CoFeB/MgO magnetic tunnel junction from parallel to antiparallel without rare-earth elements.

desk verdict Credible first demonstration of single-shot P-to-AP switching in CoFeB/MgO MTJs, but the unmeasured AP-shift field leaves the absorption-control mechanism open. read the letter →

arxiv 2510.25102 v2 pith:6SG6CSOF submitted 2025-10-29 cond-mat.mes-hall cond-mat.mtrl-sciphysics.optics

Junta Igarashi , Sébastien Geiskopf , Takanobu Shinoda , Butsurin Jinnai , Yann Le Guen , Julius Hohlfeld , Shunsuke Fukami , Hideo Ohno
show 4 more authors
Jon Gorchon Stéphane Mangin Michel Hehn Grégory Malinowski
This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics
keywords all-opticalswitchingmagnetictunneljunctionCoFeB/MgOsingle-shotreversalTMRreadoutrare-earth-freecapping-layerengineeringultrafastspintransport
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper tries to show that a workhorse memory device—a CoFeB/MgO magnetic tunnel junction of the type used in STT-MRAM—can be reversed with a single femtosecond (or even 10-picosecond) laser pulse, without adding rare-earth elements such as Gd or Tb. The authors demonstrate deterministic switching from the parallel to antiparallel state in full-film stacks and in a microscale device, where the magnetic flip is read electrically through the tunnel magnetoresistance. The key experimental lever is the Ru (or Pt) capping layer thickness, which shifts how much laser energy is absorbed in the free versus reference magnetic layers. The authors are careful to note that the microscopic mechanism—ultrafast spin transport, dipolar coupling, or a thermally assisted internal-bias-field effect—is not yet pinned down. If the central claim holds, it connects ultrafast all-optical writing to the existing MRAM device platform.

What carries the argument

The load-bearing element is the capping layer thickness (Ru or Pt) on top of a standard perpendicular CoFeB/MgO MTJ with a synthetic ferromagnetic reference layer. By changing t_cap, the authors alter the optical absorption profile computed with the transfer matrix method, increasing energy deposited in the cap+free layer while suppressing absorption in the reference layer; this absorption imbalance is the knob that makes deterministic P-to-AP switching appear. Electrical readout then rests on the tunnel magnetoresistance effect across the MgO barrier.

What would settle it

Measure the minor-loop shift field for t_Ru = 0, 1, 2, 3, 4, and 5 nm: if the AP-biasing shift field tracks the threshold fluence for P-to-AP switching across all cap thicknesses, the heat-assisted field-driven explanation is favored; a flat shift field with widely varying thresholds would instead support the absorption-balance or spin-transport picture.

Watch

Extended reading notes

Core claim

The central claim is that single-shot magnetization reversal is possible in rare-earth-free CoFeB/MgO MTJs by engineering where the laser energy lands. With Ru capping 2.0 nm or thicker, a single pulse switches the junction from P to AP; no AP-to-P switching is observed. Transfer-matrix calculations show that thicker caps absorb more light in the cap/free-layer region and reduce absorption in the synthetic-antiferromagnet reference layer, and Pt caps reproduce the same thresholds, indicating an absorption/heating effect rather than a Ru-specific chemistry. In a 10×10 µm² device, the P-to-AP flip is detected electrically as a resistance change via TMR, with thresholds around 18 mJ/cm² for 35-

Load-bearing premise

The argument rests on the premise that the P-to-AP reversal is caused by the engineered absorption/heating balance between the free and reference layers, and not primarily by the small internal shift field that already biases the junction toward AP; the paper does not report a measurement of how that shift field varies with capping thickness.

Editorial extensions

If this is right

  • Single-shot all-optical writing could be integrated with an STT-MRAM-compatible MTJ stack, eliminating the need for rare-earth-based free layers in optically switched memories.
  • TMR-based electrical readout means the optical switching can be detected in a packaged device, not just in optical microscopy.
  • The capping layer provides a practical tuning parameter for the switching window, since the multidomain threshold rises faster than the switching threshold with cap thickness.
  • The switching survives pulse durations up to 10 ps, so it does not depend on femtosecond timing; moderately broad pulses still work.
  • The one-way P-to-AP direction implies that any complete optically written memory cell will need a companion mechanism to write the opposite direction.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the small AP-biasing shift field is amplified during the transient demagnetized state, the 'all-optical' switching may be closer to heat-assisted field writing than to pure ultrafast spin-transfer; a direct measure of the shift field versus capping thickness would separate these.
  • The same absorption-balance knob might be portable to [CoFeB/MgO] multilayer free layers and to other ferromagnetic MTJ systems, since nothing in the argument is specific to Ru chemistry.
  • Because AP-to-P switching is absent, a plausible development path is a hybrid scheme where one light pulse writes AP and a second pulse or spin torque restores P, potentially giving a two-terminal optical-electrical memory.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 5 minor

Summary. The manuscript reports single-shot, laser-pulse-induced magnetization reversal from the parallel (P) to the antiparallel (AP) state in CoFeB/MgO-based magnetic tunnel junctions (MTJs) that do not contain rare-earth elements. Full-film MOKE imaging shows P-to-AP switching for Ru capping thicknesses t_Ru ≥ 2.0 nm, while AP-to-P switching is not observed. The switching threshold fluence F_P is nearly independent of capping thickness, whereas the multidomain threshold F_MD increases with t_cap. Transfer-matrix absorption calculations using literature optical constants show that increasing Ru/Pt thickness suppresses absorption in the reference layer relative to the free layer, which the authors interpret as evidence that controlled laser heating of the free layer enables reversal. A microscale MTJ device with t_Ru = 3.0 nm shows a TMR-detected P-to-AP resistance change after a single pulse. The authors explicitly note that the switching mechanism is not fully resolved and discuss both ultrafast spin transport and a heat-assisted (HAMR-like) scenario driven by a small AP-biasing shift field that they observe in MOKE hysteresis loops (Appendix C).

Significance. If the central interpretation holds, the result is technologically significant: it demonstrates a route to all-optical reversal in a rare-earth-free MTJ stack compatible with STT-MRAM manufacturing, with electrical readout via TMR. The transfer-matrix calculation is a parameter-free comparison against literature refractive indices and is not fitted to the switching data, which is a strength. The capping-layer trend and the Pt-cap control are consistent and support a role for absorbed-energy distribution. However, the authors themselves identify a plausible alternative mechanism—the AP-biasing shift field—that could explain P-to-AP switching under transient heating without invoking any optically driven angular-momentum transfer. Because the shift field is not measured as a function of capping thickness, the load-bearing claim that the energy absorption profile (rather than a capping-dependent bias field) controls the switching is not yet established. The paper is therefore more a credible observation of single-shot P-to-AP reversal in an MTJ than a demonstrated all-optical switching mechanism.

major comments (4)
  1. [§IV/Discussion and Appendix C] The paper's central claim is that tuning the Ru/Pt capping thickness controls reversal by modifying the laser energy absorption profile. Appendix C explicitly reports a small shift field biasing the free layer toward the AP state and acknowledges that under laser-induced demagnetization this field could drive P-to-AP reversal in a HAMR-like manner. The authors do not measure H_shift as a function of t_cap. If H_shift varies systematically with capping thickness, the observed F_P and F_MD trends in Fig. 3(a,b) could be caused by the bias field rather than the absorption ratio. If H_shift is constant, it could still be the primary switching mechanism, with the capping dependence reflecting only the temperature at which reversal occurs. This unmeasured confound directly undermines the conclusion that 'precise heat control' via the absorption profile enables deterministic reversal. A measure
  2. [§IV/Discussion and abstract/title] The terminology 'all-optical switching' (AOS) is used in the title, abstract, and conclusions, yet the discussion states that the precise mechanism remains unclear and that the switching might be thermally assisted switching by the intrinsic shift field. If the HAMR-like mechanism is correct, the reversal is not 'all-optical' in the sense normally implied by the AOS literature (i.e., angular-momentum transfer from laser-driven spin dynamics), but rather heat-assisted field-driven reversal. Since the manuscript itself leaves this possibility open, the claims should be reframed to 'laser-induced P–AP reversal' or the mechanism must be pinned down with additional experiments (e.g., TR-MOKE, field-compensation, or time-resolved X-ray microscopy).
  3. [Fig. 3 and §III.A] The absorption calculation in Fig. 3(c) is used to argue that increasing t_cap reduces the absorption ratio between reference and free layers, enabling P-to-AP switching. However, the experimental F_P is reported as 'nearly constant' with t_cap, while the calculated 'Cap + Free' absorption increases monotonically. The argument would be strengthened by a quantitative correlation between the calculated temperature rise (or absorbed energy) in the free layer at F_P and a thermal switching model, rather than a qualitative trend. As it stands, the trend in F_MD is the main capping-dependent observation, and the link to the free-layer absorption is not direct.
  4. [Appendix A (pulse-duration dependence)] The text states: 'As shown in Fig. 3, no P-to-AP switching is observed for a pulse duration of 50 fs.' This is inconsistent with the main-text Fig. 3, which shows P-to-AP switching at 50 fs for t_Ru ≥ 2.0 nm. The sentence likely refers to the t_Ru = 0 nm samples in Fig. 5, but the reference to Fig. 3 is incorrect and the statement is confusingly worded. This ambiguity should be corrected, since it affects the interpretation of the pulse-duration data.
minor comments (5)
  1. [§III.B and Fig. 4] The TMR device measurement uses a Ti/Au electrode covering ~30% of the pillar, leading to partial switching. The authors acknowledge this limitation. It would be useful to state the fraction of the device area that switches, if derivable from the resistance change (e.g., expected full TMR of 66% vs. observed change), to quantify the proof-of-concept.
  2. [Abstract and §V] The abstract says 'magnetization reversal from parallel (P) to antiparallel (AP) state with switching observed for t_Ru ≥ 2.0 nm' without specifying that this is for 50 fs pulses. The main text clarifies this for the full-film experiments, but the abstract could be more precise.
  3. [Experimental method (§II.A)] The stack description uses 'Ta(5)/Pt(5)/[Co(0.4)/Pt(0.6)]6/Co(0.4)/Ru(0.4)/[Co(0.4)/Pt(0.4)]2/Co(0.4)/Ta(0.2)/CoFeB(1)/MgO(tMgO)/CoFeB(1.5)/Ta(5)/Capping(tcap)'. The notation is standard, but the orientation (substrate to top) should be explicitly stated near the formula, as is done later in the text, to avoid confusion.
  4. [Fig. 3(c)] The y-axis label 'Energy absorption (%)' is not defined—is it the percentage of incident laser energy absorbed in each layer, or the percentage of the total absorbed energy in the stack? Please define in the caption.
  5. [General] The manuscript repeats the sentence about patterning at MiNaLor platform in the acknowledgments (duplicate sentence). Also, the acknowledgment 'All funding was shared equally among all authors' is unusual and may be a formatting artifact; please check.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the central observation is experimental, and the supporting optical-absorption modeling uses literature refractive indices, not parameters fitted to the switching data.

full rationale

The paper's central claim is an experimental demonstration of single-shot P-to-AP switching in CoFeB/MgO MTJs, observed by MOKE and TMR. The capping-thickness dependence is measured directly. The supporting transfer-matrix absorption calculation uses refractive indices from Refs. [29,30] (Johnson & Christy and Igarashi et al., Nano Lett. 2020), which are literature values for the constituent materials and are not fitted to the measured threshold fluences or switching probabilities. The comparison between the calculated absorption trend and the measured F_P/F_MD trends is qualitative consistency, not a numerical fit that would make the 'prediction' equivalent to its input. Threshold fluences are extracted by a standard domain-area fitting procedure (Ref. 28), which does not encode the conclusion. The authors explicitly leave the switching mechanism open and they flag the measured AP-biasing shift field (Appendix C) as a possible HAMR-like alternative pathway, acknowledging that 'it remains unclear how this shift field evolves after laser excitation.' That is a stated limitation or confound, not a circular step. Self-citations (Refs. 11, 14, 22, 28, 30) provide prior experimental context, measurement methods, and optical constants; they do not substitute for the new data or force the central claim by construction. No equation or fitted parameter reduces to the target observation, so the derivation chain is self-contained with respect to the paper's main findings.

Assumptions & free parameters 0 free parameters · 4 assumptions · 0 invented entities

The central claim rests on the interpretation of the optical switching experiments. The main assumptions are that the characterization on Si substrates transfers to the sapphire samples, that the optical absorption model is accurate, and that the MOKE signal reflects the free layer. No free parameters are introduced for the central claim; the shift field is a measured quantity but its role is uncertain.

assumptions (4)
  • domain assumption The MTJ stack properties are identical on sapphire and thermally oxidized Si substrates.
    Used to justify characterizing stacks on Si wafers while performing AOS on sapphire substrates (Sec. II.B).
  • standard math The transfer-matrix method with literature refractive indices correctly models laser energy absorption in the multilayer.
    Used in Sec. III.A to compute energy absorption in the free and reference layers as a function of capping thickness.
  • domain assumption The MOKE contrast from the full film is dominated by the free-layer magnetization, not the reference layer.
    The paper does not explicitly separate layer contributions in MOKE imaging; the interpretation of P-to-AP switching relies on this assumption.
  • ad hoc to paper The observed P-to-AP switching is not primarily caused by the small AP-biasing shift field.
    The authors acknowledge the shift field in Appendix C and discuss it as a possible contributor, but do not quantify its role or its variation with capping thickness.

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Cite this review

Pith. "Pith review of Single-shot laser-pulse-induced magnetization reversal in CoFeB/MgO-based magnetic tunnel junctions." pith.science (2026). https://pith.science/paper/6SG6CSOF

@misc{pith2026251025102,
  author       = {Pith},
  title        = {Pith review of: Single-shot laser-pulse-induced magnetization reversal in CoFeB/MgO-based magnetic tunnel junctions},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/6SG6CSOF}},
  note         = {Machine review of arXiv:2510.25102}
}
abstract

We demonstrate single-shot laser-pulse-induced magnetization reversal in rare-earth-free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin-transfer torque magnetic random-access memory (STT-MRAM). By tuning the Ru capping layer thickness, we modify the laser energy absorption profile and observe magnetization reversal from the parallel (P) to antiparallel (AP) state, with switching observed for $t_\text{Ru} \geq 2.0\,$ nm. Furthermore, we detect magnetization reversal in a micro-scale MTJ device via the tunnel magnetoresistance (TMR) effect. Our findings suggest that ultrafast spin transport, dipolar interactions, or a combination of both may contribute to the switching process, although the precise mechanism remains to be clarified. This work represents a significant step toward integrating ultrafast optical control with MTJ technology.

Figures

Figures reproduced from arXiv: 2510.25102 by the authors.

Figure 1
Figure 1. FIG. 1. MTJ stack and its characterization. (a) Schematic of the MTJ [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. FIG. 2. Single-shot magnetization switching observed via MOKE [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 4
Figure 4. FIG. 4. Single-shot switching detected via the TMR effect. (a) Op [PITH_FULL_IMAGE:figures/full_fig_p004_4.png] view at source ↗
Figures from the paper (2 more)
Figure 5
Figure 5. Figure 5: FIG. 5. (a, b) Evolution of the threshold fluences for P-to-AP switch [PITH_FULL_IMAGE:figures/full_fig_p007_5.png]
Figure 7
Figure 7. Figure 7: FIG. 7. Minor MOKE hysteresis loops of the MTJ stack. Arrows [PITH_FULL_IMAGE:figures/full_fig_p007_7.png]

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Reference graph

Works this paper leans on

41 extracted references

  1. [1]

    Beaurepaire , author J.-C

    author author E. Beaurepaire , author J.-C. \ Merle , author A. Daunois , \ and\ author J.-Y. \ Bigot ,\ title title Ultrafast spin dynamics in ferromagnetic nickel , \ @noop journal journal Physical review letters \ volume 76 ,\ pages 4250 ( year 1996 ) NoStop

    1996

  2. [2]

    Malinowski , author F

    author author G. Malinowski , author F. Dalla Longa , author J. Rietjens , author P. Paluskar , author R. Huijink , author H. Swagten , \ and\ author B. Koopmans ,\ title title Control of speed and efficiency of ultrafast demagnetization by direct transfer of spin angular momentum , \ @noop journal journal Nature Physics \ volume 4 ,\ pages 855--858 ( yea...

    2008

  3. [3]

    Schellekens , author K

    author author A. Schellekens , author K. Kuiper , author R. De Wit , \ and\ author B. Koopmans ,\ title title Ultrafast spin-transfer torque driven by femtosecond pulsed-laser excitation , \ @noop journal journal Nature communications \ volume 5 ,\ pages 4333 ( year 2014 ) NoStop

    2014

  4. [4]

    \ Choi , author B.-C

    author author G.-M. \ Choi , author B.-C. \ Min , author K.-J. \ Lee , \ and\ author D. G. \ Cahill ,\ title title Spin current generated by thermally driven ultrafast demagnetization , \ @noop journal journal Nature communications \ volume 5 ,\ pages 4334 ( year 2014 ) NoStop

    2014

  5. [5]

    Radu , author K

    author author I. Radu , author K. Vahaplar , author C. Stamm , author T. Kachel , author N. Pontius , author H. D \"u rr , author T. Ostler , author J. Barker , author R. Evans , author R. Chantrell , et al. ,\ title title Transient ferromagnetic-like state mediating ultrafast reversal of antiferromagnetically coupled spins , \ @noop journal journal Natur...

    2011

  6. [6]

    Ostler , author J

    author author T. Ostler , author J. Barker , author R. Evans , author R. Chantrell , author U. Atxitia , author O. Chubykalo-Fesenko , author S. El Moussaoui , author L. Le Guyader , author E. Mengotti , author L. Heyderman , et al. ,\ title title Ultrafast heating as a sufficient stimulus for magnetization reversal in a ferrimagnet , \ @noop journal jour...

    2012

  7. [7]

    Lalieu , author M

    author author M. Lalieu , author M. Peeters , author S. Haenen , author R. Lavrijsen , \ and\ author B. Koopmans ,\ title title Deterministic all-optical switching of synthetic ferrimagnets using single femtosecond laser pulses , \ @noop journal journal Phys. Rev. B \ volume 96 ,\ pages 220411 ( year 2017 ) NoStop

    2017

  8. [8]

    Banerjee , author N

    author author C. Banerjee , author N. Teichert , author K. Siewierska , author Z. Gercsi , author G. Atcheson , author P. Stamenov , author K. Rode , author J. Coey , \ and\ author J. Besbas ,\ title title Single pulse all-optical toggle switching of magnetization without gadolinium in the ferrimagnet Mn2RuxGa , \ @noop journal journal Nat. Commun. \ volu...

    2020

Show all 41 references
  1. [9]

    Davies , author G

    author author C. Davies , author G. Bonfiglio , author K. Rode , author J. Besbas , author C. Banerjee , author P. Stamenov , author J. Coey , author A. Kimel , \ and\ author A. Kirilyuk ,\ title title Exchange-driven all-optical magnetic switching in compensated 3 d ferrimagn...

    2020

  2. [10]

    Banerjee , author K

    author author C. Banerjee , author K. Rode , author G. Atcheson , author S. Lenne , author P. Stamenov , author J. Coey , \ and\ author J. Besbas ,\ title title Ultrafast double pulse all-optical reswitching of a ferrimagnet , \ @noop journal journal Phys. Rev. Lett. \ volume ...

    2021

  3. [11]

    Igarashi , author W

    author author J. Igarashi , author W. Zhang , author Q. Remy , author E. D \' az , author J.-X. \ Lin , author J. Hohlfeld , author M. Hehn , author S. Mangin , author J. Gorchon , \ and\ author G. Malinowski ,\ title title Optically induced ultrafast magnetization switching i...

    2023

  4. [12]

    author author Q. Remy ,\ title title Ultrafast magnetization reversal in ferromagnetic spin valves: An s- d model perspective , \ @noop journal journal Physical Review B \ volume 107 ,\ pages 174431 ( year 2023 ) NoStop

    2023

  5. [13]

    Singh , author A

    author author H. Singh , author A. Anad \'o n , author J. Igarashi , author Q. Remy , author S. Mangin , author M. Hehn , author J. Gorchon , \ and\ author G. Malinowski ,\ title title Ultrafast spin accumulations drive magnetization reversal in multilayers , \ @noop journal j...

    2025

  6. [14]

    Ishibashi , author J

    author author K. Ishibashi , author J. Igarashi , author A. Anad \'o n , author M. Hehn , author Y. Le Guen , author S. Iihama , author J. Hohlfeld , author J. Gorchon , author S. Mangin , \ and\ author G. Malinowski ,\ title title Single-shot magnetization reversal in ferroma...

    2025

  7. [15]

    \ Chen , author L

    author author J.-Y. \ Chen , author L. He , author J.-P. \ Wang , \ and\ author M. Li ,\ title title All-optical switching of magnetic tunnel junctions with single subpicosecond laser pulses , \ @noop journal journal Physical Review Applied \ volume 7 ,\ pages 021001 ( year 20...

    2017

  8. [16]

    author author A. V. \ Kimel \ and\ author M. Li ,\ title title Writing magnetic memory with ultrashort light pulses , \ @noop journal journal Nature Reviews Materials \ volume 4 ,\ pages 189--200 ( year 2019 ) NoStop

    2019

  9. [17]

    Avil \'e s-F \'e lix , author A

    author author L. Avil \'e s-F \'e lix , author A. Olivier , author G. Li , author C. S. \ Davies , author L. \'A lvaro-G \'o mez , author M. Rubio-Roy , author S. Auffret , author A. Kirilyuk , author A. Kimel , author T. Rasing , et al. ,\ title title Single-shot all-optical ...

    2020

  10. [18]

    Wang , author H

    author author L. Wang , author H. Cheng , author P. Li , author Y. L. \ Van Hees , author Y. Liu , author K. Cao , author R. Lavrijsen , author X. Lin , author B. Koopmans , \ and\ author W. Zhao ,\ title title Picosecond optospintronic tunnel junctions , \ @noop journal journ...

    2022

  11. [19]

    Mondal , author D

    author author S. Mondal , author D. Polley , author A. Pattabi , author J. Chatterjee , author D. Salomoni , author L. Aviles-Felix , author A. Olivier , author M. Rubio-Roy , author B. Di \'e ny , author L. D. B. \ Prejbeanu , et al. ,\ title title Single-shot switching in tb...

    2023

  12. [20]

    Salomoni , author Y

    author author D. Salomoni , author Y. Peng , author L. Farcis , author S. Auffret , author M. Hehn , author G. Malinowski , author S. Mangin , author B. Dieny , author L. Buda-Prejbeanu , author R. C. \ Sousa , et al. ,\ title title Field-free all-optical switching and electri...

    2023

  13. [21]

    Julliere ,\ title title Tunneling between ferromagnetic films , \ @noop journal journal Physics letters A \ volume 54 ,\ pages 225--226 ( year 1975 ) NoStop

    author author M. Julliere ,\ title title Tunneling between ferromagnetic films , \ @noop journal journal Physics letters A \ volume 54 ,\ pages 225--226 ( year 1975 ) NoStop

    1975

  14. [22]

    Geiskopf , author J

    author author S. Geiskopf , author J. Igarashi , author G. Malinowski , author J.-X. \ Lin , author J. Gorchon , author S. Mangin , author J. Hohlfeld , author D. Lacour , \ and\ author M. Hehn ,\ title title Single-shot all-optical magnetization switching in in-plane magnetiz...

    2025

  15. [23]

    He , author T

    author author W. He , author T. Zhu , author X.-Q. \ Zhang , author H.-T. \ Yang , \ and\ author Z.-H. \ Cheng ,\ title title Ultrafast demagnetization enhancement in cofeb/mgo/cofeb magnetic tunneling junction driven by spin tunneling current , \ @noop journal journal Scienti...

    2013

  16. [24]

    Ikeda , author K

    author author S. Ikeda , author K. Miura , author H. Yamamoto , author K. Mizunuma , author H. Gan , author M. Endo , author S. Kanai , author J. Hayakawa , author F. Matsukura , \ and\ author H. Ohno ,\ title title A perpendicular-anisotropy cofeb--mgo magnetic tunnel junctio...

    2010

  17. [25]

    Sato , author M

    author author H. Sato , author M. Yamanouchi , author S. Ikeda , author S. Fukami , author F. Matsukura , \ and\ author H. Ohno ,\ title title Mgo/cofeb/ta/cofeb/mgo recording structure in magnetic tunnel junctions with perpendicular easy axis , \ @noop journal journal IEEE Tr...

    2013

  18. [26]

    Worledge \ and\ author P

    author author D. Worledge \ and\ author P. Trouilloud ,\ title title Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling , \ @noop journal journal Applied Physics Letters \ volume 83 ,\ pages 84--86 ( year 2003 ) NoStop

    2003

  19. [27]

    Iihama , author Y

    author author S. Iihama , author Y. Xu , author M. Deb , author G. Malinowski , author M. Hehn , author J. Gorchon , author E. E. \ Fullerton , \ and\ author S. Mangin ,\ title title Single-Shot Multi-Level All-Optical Magnetization Switching Mediated by Spin Transport , \ @no...

    2018

  20. [28]

    Igarashi , author Y

    author author J. Igarashi , author Y. Le Guen , author J. Hohlfeld , author S. Mangin , author J. Gorchon , author M. Hehn , \ and\ author G. Malinowski ,\ title title Influence of interlayer exchange coupling on ultrafast laser-induced magnetization reversal in ferromagnetic ...

    2024

  21. [29]

    Johnson \ and\ author R

    author author P. Johnson \ and\ author R. Christy ,\ title title Optical constants of transition metals: Ti, v, cr, mn, fe, co, ni, and pd , \ @noop journal journal Phys. Rev. B \ volume 9 ,\ pages 5056 ( year 1974 ) NoStop

    1974

  22. [30]

    Igarashi , author Q

    author author J. Igarashi , author Q. Remy , author S. Iihama , author G. Malinowski , author M. Hehn , author J. Gorchon , author J. Hohlfeld , author S. Fukami , author H. Ohno , \ and\ author S. Mangin ,\ title title Engineering single-shot all-optical switching of ferromag...

    2020

  23. [31]

    Bergeard , author M

    author author N. Bergeard , author M. Hehn , author S. Mangin , author G. Lengaigne , author F. Montaigne , author M. Lalieu , author B. Koopmans , \ and\ author G. Malinowski ,\ title title Hot-electron-induced ultrafast demagnetization in co/pt multilayers , \ @noop journal ...

    2016

  24. [32]

    Bergeard , author M

    author author N. Bergeard , author M. Hehn , author K. Carva , author P. Bal \'a z , author S. Mangin , \ and\ author G. Malinowski ,\ title title Tailoring femtosecond hot-electron pulses for ultrafast spin manipulation , \ @noop journal journal Applied Physics Letters \ volu...

    2020

  25. [33]

    \ Pudell , author M

    author author J.-E. \ Pudell , author M. Mattern , author M. Hehn , author G. Malinowski , author M. Herzog , \ and\ author M. Bargheer ,\ title title Heat transport without heating?—an ultrafast x-ray perspective into a metal heterostructure , \ @noop journal journal Advanced...

    2020

  26. [34]

    Wilson , author J

    author author R. Wilson , author J. Gorchon , author Y. Yang , author C.-H. \ Lambert , author S. Salahuddin , \ and\ author J. Bokor ,\ title title Ultrafast magnetic switching of gdfeco with electronic heat currents , \ @noop journal journal Physical Review B \ volume 95 ,\ ...

    2017

  27. [35]

    Xu , author M

    author author Y. Xu , author M. Deb , author G. Malinowski , author M. Hehn , author W. Zhao , \ and\ author S. Mangin ,\ title title Ultrafast magnetization manipulation using single femtosecond light and hot-electron pulses , \ @noop journal journal Advanced Materials \ volu...

    2017

  28. [36]

    Olivier , author L

    author author A. Olivier , author L. Avil \'e s-F \'e lix , author A. Chavent , author L. \'A lvaro-Go \'e mez , author M. Rubio-Roy , author S. Auffret , author L. Vila , author B. Dieny , author R. C. \ Sousa , \ and\ author I. Prejbeanu ,\ title title Indium tin oxide optic...

    2020

  29. [37]

    Shibata , author T

    author author T. Shibata , author T. Mizuno , author T. Nojiri , author T. Yamane , author Y. Hirata , author W. Zhang , author H. Fukuzawa , author Y. Kasatani , \ and\ author A. Tsukamoto ,\ title title Spin photo detector by using a cofeb magnetic tunnel junction , \ @noop ...

    2024

  30. [38]

    author author M. H. \ Kryder , author E. C. \ Gage , author T. W. \ McDaniel , author W. A. \ Challener , author R. E. \ Rottmayer , author G. Ju , author Y.-T. \ Hsia , \ and\ author M. F. \ Erden ,\ title title Heat assisted magnetic recording , \ @noop journal journal Proce...

    2008

  31. [39]

    Sato , author M

    author author H. Sato , author M. Yamanouchi , author S. Ikeda , author S. Fukami , author F. Matsukura , \ and\ author H. Ohno ,\ title title Perpendicular-anisotropy cofeb-mgo magnetic tunnel junctions with a mgo/cofeb/ta/cofeb/mgo recording structure , \ @noop journal journ...

    2012

  32. [40]

    Nishioka , author H

    author author K. Nishioka , author H. Honjo , author S. Ikeda , author T. Watanabe , author S. Miura , author H. Inoue , author T. Tanigawa , author Y. Noguchi , author M. Yasuhira , author H. Sato , et al. ,\ title title Novel quad interface mtj technology and its first demon...

    2019

  33. [41]

    Igarashi , author B

    author author J. Igarashi , author B. Jinnai , author K. Watanabe , author T. Shinoda , author T. Funatsu , author H. Sato , author S. Fukami , \ and\ author H. Ohno ,\ title title Single-nanometer cofeb/mgo magnetic tunnel junctions with high-retention and high-speed capabili...

    2024

Pith tools

Reviewed August 4, 2026 · model on record in the stance chip above.