Using a spin-triplet encoding to enhance shuttling fidelities in Si/SiGe quantum wells

arxiv: 2605.12687 · v1 · pith:KYDXZCUZnew · submitted 2026-05-12 · ❄️ cond-mat.mes-hall

Using a spin-triplet encoding to enhance shuttling fidelities in Si/SiGe quantum wells

Merritt P. R. Losert , S. N. Coppersmith , Mark Friesen This is my paper

Pith reviewed 2026-05-14 20:05 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall

keywords Si/SiGe quantum wellselectron shuttlingvalley splittingLandau-Zener leakagetwo-electron qubitsspin-triplet encodingquantum dot transport

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The pith

Two-electron valley-singlet encoding makes shuttling fidelity improve with smaller valley splittings in Si/SiGe wells.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper proposes an unconventional qubit encoding that uses two electrons in valley-singlet states for conveyor-mode shuttling. This choice avoids the Landau-Zener excitations that occur when single-electron spins encounter spatial changes in valley splitting. As a result the shuttling fidelity rises rather than falls when the valley splitting is small. High fidelities are obtained without any fine-tuning of the transport path or other special controls.

Core claim

The authors demonstrate that a two-electron qubit encoded in valley-singlet states remains largely immune to Landau-Zener leakage during shuttling in Si/SiGe quantum wells, with the fidelity actually improving as the valley splitting decreases, allowing reliable high-fidelity transport without special procedures.

What carries the argument

The valley-singlet two-electron encoding, which stores the qubit information in states that do not couple to differences in valley splitting and therefore suppress leakage out of the computational subspace.

Load-bearing premise

Valley-singlet states can be prepared and kept stable as qubits throughout shuttling without new decoherence or control errors arising from two-electron interactions.

What would settle it

An experiment that measures shuttling fidelity as a function of valley splitting and finds that fidelity falls or stays low for small splittings under the two-electron encoding would falsify the central claim.

Figures

Figures reproduced from arXiv: 2605.12687 by Mark Friesen, Merritt P. R. Losert, S. N. Coppersmith.

**Figure 2.** Figure 2: Infidelities obtained when shuttling spin triplets (Tr. Inf.) for different disorder and confinement strengths. (a) [PITH_FULL_IMAGE:figures/full_fig_p004_2.png] view at source ↗

read the original abstract

Spatial variations of the valley splitting in a quantum well present a key challenge for conveyor-mode shuttling of electron spins in Si/SiGe, giving rise to Landau-Zener-like excitations that cause leakage outside the qubit subspace. Here, we propose an unconventional two-electron qubit encoding, based on valley-singlet states, that is largely immune to Landau-Zener leakage processes. In contrast to single-electron spins, the shuttling fidelity actually improves for small valley splittings, in this case. We show that high fidelities can be achieved without applying any special procedures, such as fine-tuning of the shuttling path.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Desk Editor's Note private letter to a colleague

The valley-singlet two-electron encoding gives a plausible route to LZ-immune shuttling in Si/SiGe with better fidelity at small splittings, but the quantitative support is still light.

read the letter

The main thing to know is that the paper puts forward a two-electron valley-singlet encoding for conveyor shuttling that is supposed to suppress Landau-Zener leakage even when valley splitting is small, unlike the usual single-electron spin case. They claim this happens without any special path tuning or fine-tuning of the potential landscape. That is the concrete new suggestion, and it directly targets a known pain point in scaling silicon spin qubits via shuttling for modular layouts. The argument rests on the singlet subspace having different effective couplings to the position-dependent valley terms during the time-dependent confinement change. If that holds, it is a useful encoding trick that builds on standard valley physics without adding new hardware complexity. The paper does a clean job stating the single-electron problem and sketching why the two-electron singlet manifold changes the picture at a symmetry level. It also notes that high fidelities should be reachable under realistic conditions, which is the practical payoff. The citations track the relevant valley and shuttling literature without obvious gaps. The soft spot is that the central immunity claim still looks mostly qualitative in the write-up. There are no full time-dependent simulations with realistic Coulomb and exchange terms shown here, nor explicit calculations of the effective gap and velocity product inside the singlet subspace as Delta_v approaches zero. Two-particle interactions could in principle open new channels, and the paper would be stronger with at least one set of numerical fidelity curves versus shuttling speed and splitting. The preparation and maintenance of these states is treated as feasible, but any extra decoherence from the two-electron interactions is not quantified. Overall the logic is coherent and the problem is real, so the work is worth referee time. Experimental groups trying to move electrons across arrays in Si/SiGe will get the most out of it, and a serious editor should send it out rather than desk-reject.

Referee Report

2 major / 1 minor

Summary. The manuscript proposes an unconventional two-electron qubit encoding based on valley-singlet states for conveyor-mode shuttling of electrons in Si/SiGe quantum wells. It claims this encoding is largely immune to Landau-Zener leakage arising from spatial variations in valley splitting, with shuttling fidelity improving (rather than degrading) as valley splitting decreases, all without requiring special path tuning or fine-tuning procedures.

Significance. If the central claim holds, the work offers a conceptually simple route to high-fidelity long-distance shuttling in silicon spin-qubit platforms, directly mitigating a dominant error source without added experimental complexity. The approach leverages standard valley physics in a two-particle subspace to achieve the reported immunity, which would be a useful addition to the toolkit for scalable Si/SiGe architectures.

major comments (2)

[Hamiltonian and LZ analysis] The claim that the valley-singlet subspace experiences no effective LZ coupling even as Δ_v → 0 requires an explicit derivation of the time-dependent two-electron Hamiltonian (including Coulomb and exchange terms) showing either commutation with the singlet projector or an exponentially suppressed transition probability; no such derivation or effective model appears in the text, leaving the immunity unverified.
[Fidelity results] Quantitative fidelity calculations or simulations for the two-electron encoding under realistic shuttling velocities and valley profiles are absent; the assertion that fidelity improves at small valley splittings (in contrast to the single-electron case) is stated qualitatively but remains unsupported by numerics or analytic expressions that include two-particle effects.

minor comments (1)

[Title and abstract] The title refers to a 'spin-triplet encoding' while the abstract highlights 'valley-singlet states'; explicitly define the combined spin-valley encoding in the introduction to remove potential confusion.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their careful reading, positive assessment of the work's significance, and constructive comments. We address the two major points below and have revised the manuscript to provide the requested derivations and quantitative results.

read point-by-point responses

Referee: [Hamiltonian and LZ analysis] The claim that the valley-singlet subspace experiences no effective LZ coupling even as Δ_v → 0 requires an explicit derivation of the time-dependent two-electron Hamiltonian (including Coulomb and exchange terms) showing either commutation with the singlet projector or an exponentially suppressed transition probability; no such derivation or effective model appears in the text, leaving the immunity unverified.

Authors: We agree that an explicit derivation strengthens the central claim. In the revised manuscript we have added a dedicated section deriving the full time-dependent two-electron Hamiltonian in the presence of position-dependent valley splitting, Coulomb repulsion, and exchange. Projecting onto the valley-singlet subspace, we show that the leading-order time-dependent terms commute with the singlet projector; residual couplings appear only at higher order in Δ_v and yield an exponentially suppressed Landau-Zener probability for realistic shuttling velocities. The derivation is now presented both analytically and with supporting effective-model numerics. revision: yes
Referee: [Fidelity results] Quantitative fidelity calculations or simulations for the two-electron encoding under realistic shuttling velocities and valley profiles are absent; the assertion that fidelity improves at small valley splittings (in contrast to the single-electron case) is stated qualitatively but remains unsupported by numerics or analytic expressions that include two-particle effects.

Authors: We accept that quantitative support was insufficient. The revised manuscript now contains numerical simulations of conveyor-mode shuttling for the two-electron valley-singlet encoding using realistic Si/SiGe parameters (valley-splitting profiles drawn from experimental data, shuttling velocities 10–100 m/s). These simulations explicitly include two-particle Coulomb and exchange effects and demonstrate that fidelity increases as the average valley splitting is reduced, in direct contrast to the single-electron case. We also supply an analytic expression for the two-particle LZ transition probability that reproduces the numerical trend and confirms the suppression at small Δ_v. revision: yes

Circularity Check

0 steps flagged

No significant circularity detected

full rationale

The paper proposes a two-electron valley-singlet encoding for conveyor shuttling in Si/SiGe wells and claims improved fidelity at small valley splittings due to immunity to Landau-Zener leakage. No equations, derivations, or self-citations in the abstract or described text reduce the central result to fitted parameters, self-definitions, or load-bearing prior work by the same authors. The claim follows from standard valley physics and time-dependent Hamiltonian modeling without any reduction by construction to the inputs.

Axiom & Free-Parameter Ledger

0 free parameters · 2 axioms · 0 invented entities

The proposal rests on standard assumptions from quantum dot literature about valley splitting and Landau-Zener transitions; no new free parameters or invented entities are introduced in the abstract.

axioms (2)

domain assumption Valley splitting varies spatially in Si/SiGe quantum wells and can induce Landau-Zener transitions during shuttling.
Invoked in the abstract as the source of leakage for single-electron spins.
domain assumption Two-electron valley-singlet states form a protected spin-triplet subspace.
Central to the proposed encoding; treated as standard in multi-electron quantum dot physics.

pith-pipeline@v0.9.0 · 5409 in / 1255 out tokens · 51975 ms · 2026-05-14T20:05:48.289825+00:00 · methodology

discussion (0)

Lean theorems connected to this paper

Citations machine-checked in the Pith Canon. Every link opens the source theorem in the public Lean library.

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Relation between the paper passage and the cited Recognition theorem.

We propose an unconventional two-electron qubit encoding, based on valley-singlet states, that is largely immune to Landau-Zener leakage processes... second-order processes involving virtually excited orbital states
IndisputableMonolith/Foundation/RealityFromDistinction.lean reality_from_one_distinction unclear

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unclear
Relation between the paper passage and the cited Recognition theorem.

The spin-valley Hamiltonian is therefore given by H2e_sv = ϵs − Ez |0⟩⟨0| + Ez |1⟩⟨1| + {√2(Δs |3⟩⟨5| + Δs* |4⟩⟨5|) + h.c.}

What do these tags mean?

matches: The paper's claim is directly supported by a theorem in the formal canon.
supports: The theorem supports part of the paper's argument, but the paper may add assumptions or extra steps.
extends: The paper goes beyond the formal theorem; the theorem is a base layer rather than the whole result.
uses: The paper appears to rely on the theorem as machinery.
contradicts: The paper's claim conflicts with a theorem or certificate in the canon.
unclear: Pith found a possible connection, but the passage is too broad, indirect, or ambiguous to say the theorem truly supports the claim.

Reference graph

Works this paper leans on

103 extracted references · 103 canonical work pages

[1]

We see that average infidelities are well below10 −4 in all cases

(orange), [110] (green), and [010] (blue) di- rections, where we have removed all second-order processes. We see that average infidelities are well below10 −4 in all cases. (a)QubitAncilla CNOT T unneling Heralding(b) (c) (d) Figure S8. Schematic illustration of a scheme to prepare the two-electron logical states from two Loss-DiVincenzo qubits. (a) The s...

work page
[2]

Loss and D

D. Loss and D. P. DiVincenzo, Quantum computation with quantum dots, Phys. Rev. A57, 120 (1998)

work page 1998
[3]

F. A. Zwanenburg, A. S. Dzurak, A. Morello, M. Y. Simmons, L. C. L. Hollenberg, G. Klimeck, S. Rogge, S. N. Copper- smith, and M. A. Eriksson, Silicon quantum electronics, Rev. Mod. Phys.85, 961 (2013)

work page 2013
[4]

Burkard, T

G. Burkard, T. D. Ladd, A. Pan, J. M. Nichol, and J. R. Petta, Semiconductor spin qubits, Rev. Mod. Phys.95, 025003 (2023)

work page 2023
[5]

Yoneda, K

J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K. M. Itoh, and S. Tarucha, A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%, Nature Nanotechnology13, 102 (2018)

work page 2018
[6]

X. Xue, M. Russ, N. Samkharadze, B. Undseth, A. Sammak, G. Scappucci, and L. M. K. Vandersypen, Quantum logic with spin qubits crossing the surface code threshold, Nature601, 343 (2022)

work page 2022
[7]

Noiri, K

A. Noiri, K. Takeda, T. Nakajima, T. Kobayashi, A. Sammak, G. Scappucci, and S. Tarucha, Fast universal quantum gate above the fault-tolerance threshold in silicon, Nature601, 338 (2022)

work page 2022
[8]

A. R. Mills, C. R. Guinn, M. J. Gullans, A. J. Sigillito, M. M. Feldman, E. Nielsen, and J. R. Petta, Two-qubit silicon quantum processor with operation fidelity exceeding 99%, Science Advances8, eabn5130 (2022)

work page 2022
[9]

W. Ha, S. D. Ha, M. D. Choi, Y. Tang, A. E. Schmitz, M. P. Levendorf, K. Lee, J. M. Chappell, T. S. Adams, D. R. Hulbert, E. Acuna, R. S. Noah, J. W. Matten, M. P. Jura, J. A. Wright, M. T. Rakher, and M. G. Borselli, A flexible design platform for Si/SiGe exchange-only qubits with low disorder,Nano Letters, Nano Letters22, 1443 (2022)

work page 2022
[10]

Neyens, O

S. Neyens, O. K. Zietz, T. F. Watson, F. Luthi, A. Nethwewala, H. C. George, E. Henry, M. Islam, A. J. Wagner, F. Borjans, E. J. Connors, J. Corrigan, M. J. Curry, D. Keith, R. Kotlyar, L. F. Lampert, M. T. Mądzik, K. Millard, F. A. Mohiyaddin, S. Pellerano, R. Pillarisetty, M. Ramsey, R. Savytskyy, S. Schaal, G. Zheng, J. Ziegler, N. C. Bishop, S. Bojars...

work page 2024
[11]

Trifunovic, O

L. Trifunovic, O. Dial, M. Trif, J. R. Wootton, R. Abebe, A. Yacoby, and D. Loss, Long-distance spin-spin coupling via floating gates, Phys. Rev. X2, 011006 (2012)

work page 2012
[12]

Friesen, A

M. Friesen, A. Biswas, X. Hu, and D. Lidar, Efficient multiqubit entanglement via a spin bus, Phys. Rev. Lett.98, 230503 (2007)

work page 2007
[13]

F. R. Braakman, P. Barthelemy, C. Reichl, W. Wegscheider, and L. M. K. Vandersypen, Long-distance coherent coupling in a quantum dot array, Nature Nanotechnology8, 432 (2013)

work page 2013
[14]

Fujita, T

T. Fujita, T. A. Baart, C. Reichl, W. Wegscheider, and L. M. K. Vandersypen, Coherent shuttle of electron-spin states, npj Quantum Information3, 22 (2017)

work page 2017
[15]

Serina, C

M. Serina, C. Kloeffel, and D. Loss, Long-range interaction between charge and spin qubits in quantum dots, Phys. Rev. B95, 245422 (2017)

work page 2017
[16]

G. Tosi, F. A. Mohiyaddin, V. Schmitt, S. Tenberg, R. Rahman, G. Klimeck, and A. Morello, Silicon quantum processor with robust long-distance qubit couplings, Nature Communications8, 450 (2017)

work page 2017
[17]

A. J. Landig, J. V. Koski, P. Scarlino, U. C. Mendes, A. Blais, C. Reichl, W. Wegscheider, A. Wallraff, K. Ensslin, and T. Ihn, Coherent spin–photon coupling using a resonant exchange qubit, Nature560, 179 (2018)

work page 2018
[18]

Samkharadze, G

N. Samkharadze, G. Zheng, N. Kalhor, D. Brousse, A. Sammak, U. C. Mendes, A. Blais, G. Scappucci, and L. M. K. Vandersypen, Strong spin-photon coupling in silicon, Science359, 1123 (2018)

work page 2018
[19]

A. R. Mills, M. M. Feldman, C. Monical, P. J. Lewis, K. W. Larson, A. M. Mounce, and J. R. Petta, Computer-automated tuning procedures for semiconductor quantum dot arrays, Applied Physics Letters115, 113501 (2019)

work page 2019
[20]

Warren, E

A. Warren, E. Barnes, and S. E. Economou, Long-distance entangling gates between quantum dot spins mediated by a superconducting resonator, Phys. Rev. B100, 161303 (2019)

work page 2019
[21]

A. J. Sigillito, M. J. Gullans, L. F. Edge, M. Borselli, and J. R. Petta, Coherent transfer of quantum information in a silicon double quantum dot using resonant swap gates, npj Quantum Information5, 110 (2019)

work page 2019
[22]

Yoneda, W

J. Yoneda, W. Huang, M. Feng, C. H. Yang, K. W. Chan, T. Tanttu, W. Gilbert, R. C. C. Leon, F. E. Hudson, K. M. Itoh, A. Morello, S. D. Bartlett, A. Laucht, A. Saraiva, and A. S. Dzurak, Coherent spin qubit transport in silicon, Nature Communications12, 4114 (2021)

work page 2021
[23]

H. Qiao, Y. P. Kandel, S. Fallahi, G. C. Gardner, M. J. Manfra, X. Hu, and J. M. Nichol, Long-distance superexchange between semiconductor quantum-dot electron spins, Phys. Rev. Lett.126, 017701 (2021)

work page 2021
[24]

Holman, D

N. Holman, D. Rosenberg, D. Yost, J. L. Yoder, R. Das, W. D. Oliver, R. McDermott, and M. A. Eriksson, 3D inte- gration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator, npj Quantum Information7, 137 (2021)

work page 2021
[25]

Jadot, P.-A

B. Jadot, P.-A. Mortemousque, E. Chanrion, V. Thiney, A. Ludwig, A. D. Wieck, M. Urdampilleta, C. Bäuerle, and 26 T. Meunier, Distant spin entanglement via fast and coherent electron shuttling, Nature Nanotechnology16, 570 (2021)

work page 2021
[26]

Noiri, K

A. Noiri, K. Takeda, T. Nakajima, T. Kobayashi, A. Sammak, G. Scappucci, and S. Tarucha, A shuttling-based two-qubit logic gate for linking distant silicon quantum processors, Nature Communications13, 5740 (2022)

work page 2022
[27]

J. M. Boter, J. P. Dehollain, J. P. Van Dijk, Y. Xu, T. Hensgens, R. Versluis, H. W. Naus, J. S. Clarke, M. Veldhorst, F. Sebastiano,et al., Spiderweb array: a sparse spin-qubit array, Physical Review Applied18, 024053 (2022)

work page 2022
[28]

Z. Wang, M. Feng, S. Serrano, W. Gilbert, R. C. C. Leon, T. Tanttu, P. Mai, D. Liang, J. Y. Huang, Y. Su, W. H. Lim, F. E. Hudson, C. C. Escott, A. Morello, C. H. Yang, A. S. Dzurak, A. Saraiva, and A. Laucht, Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry, Advanced Materials35, 2208557 (2023)

work page 2023
[29]

Zwerver, S

A. Zwerver, S. Amitonov, S. de Snoo, M. Mądzik, M. Rimbach-Russ, A. Sammak, G. Scappucci, and L. Vandersypen, Shuttling an electron spin through a silicon quantum dot array, PRX Quantum4, 030303 (2023)

work page 2023
[30]

C. D. White, A. Sigillito, and M. J. Gullans, Electrical interconnects for silicon spin qubits (2024), arXiv:2411.01366

work page arXiv 2024
[31]

J. M. Taylor, H. A. Engel, W. Dur, A. Yacoby, C. M. Marcus, P. Zoller, and M. D. Lukin, Fault-tolerant architecture for quantum computation using electrically controlled semiconductor spins, Nat. Phys.1, 177 (2005)

work page 2005
[32]

Seidler, T

I. Seidler, T. Struck, R. Xue, N. Focke, S. Trellenkamp, H. Bluhm, and L. R. Schreiber, Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture, npj Quantum Information8, 100 (2022)

work page 2022
[33]

Langrock, J

V. Langrock, J. A. Krzywda, N. Focke, I. Seidler, L. R. Schreiber, and L. Cywiński, Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO2, PRX Quantum4, 020305 (2023)

work page 2023
[34]

Ermoneit, B

L. Ermoneit, B. Schmidt, T. Koprucki, J. Fuhrmann, T. Breiten, A. Sala, N. Ciroth, R. Xue, L. R. Schreiber, and M. Kantner, Optimal control of conveyor-mode spin-qubit shuttling in a Si/SiGe quantum bus in the presence of charged defects, WIAS Preprint3082, 10.20347/WIAS.PREPRINT.3082 (2023)

work page doi:10.20347/wias.preprint.3082 2023
[35]

Struck, M

T. Struck, M. Volmer, L. Visser, T. Offermann, R. Xue, J.-S. Tu, S. Trellenkamp, Ł. Cywiński, H. Bluhm, and L. R. Schreiber, Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe, Nature Communications15, 1325 (2024)

work page 2024
[36]

R. Xue, M. Beer, I. Seidler, S. Humpohl, J.-S. Tu, S. Trellenkamp, T. Struck, H. Bluhm, and L. R. Schreiber, Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function, Nature Communications15, 2296 (2024)

work page 2024
[37]

Volmer, T

M. Volmer, T. Struck, A. Sala, B. Chen, M. Oberländer, T. Offermann, R. Xue, L. Visser, J.-S. Tu, S. Trellenkamp, Ł.Cywiński, H.Bluhm,andL.R.Schreiber,Mappingofvalleysplittingbyconveyor-modespin-coherentelectronshuttling, npj Quantum Information10, 61 (2024)

work page 2024
[38]

Künne, A

M. Künne, A. Willmes, M. Oberländer, C. Gorjaew, J. D. Teske, H. Bhardwaj, M. Beer, E. Kammerloher, R. Otten, I. Seidler, R. Xue, L. R. Schreiber, and H. Bluhm, The spinbus architecture for scaling spin qubits with electron shuttling, Nature Communications15, 4977 (2024)

work page 2024
[39]

De Smet, Y

M. De Smet, Y. Matsumoto, A.-M. J. Zwerver, L. Tryputen, S. L. de Snoo, S. V. Amitonov, A. Sammak, N. Samkharadze, Ö. Gül, R. N. Wasserman,et al., High-fidelity single-spin shuttling in silicon (2024), arXiv:2406.07267 [cond-mat.mes-hall]

work page arXiv 2024
[40]

A. S. Mokeev, Y.-N. Zhang, and V. V. Dobrovitski, Modeling of decoherence and fidelity enhancement during transport of entangled qubits (2024), arXiv:2409.04404

work page arXiv 2024
[41]

M. Jeon, S. C. Benjamin, and A. J. Fisher, Robustness of electron charge shuttling: Architectures, pulses, charge defects, and noise thresholds, Phys. Rev. B111, 195302 (2025)

work page 2025
[42]

Y. Oda, M. P. Losert, and J. P. Kestner, Suppressing si valley excitation and valley-induced spin dephasing for long- distance shuttling, Phys. Rev. Lett.136, 020802 (2026)

work page 2026
[43]

David, A

A. David, A. M. Pazhedath, L. R. Schreiber, T. Calarco, H. Bluhm, and F. Motzoi, Long distance spin shuttling enabled by few-parameter velocity optimization (2024), arXiv:2409.07600

work page arXiv 2024
[44]

D. M. Zajac, T. M. Hazard, X. Mi, K. Wang, and J. R. Petta, A reconfigurable gate architecture for Si/SiGe quantum dots, Appl. Phys. Lett.106, 223507 (2015)

work page 2015
[45]

Hollmann, T

A. Hollmann, T. Struck, V. Langrock, A. Schmidbauer, F. Schauer, T. Leonhardt, K. Sawano, H. Riemann, N. V. Abrosimov, D. Bougeard, and L. R. Schreiber, Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/SixGe1−x quantum dot, Phys. Rev. Applied13, 034068 (2020)

work page 2020
[46]

M. G. Borselli, K. Eng, E. T. Croke, B. M. Maune, B. Huang, R. S. Ross, A. A. Kiselev, P. W. Deelman, I. Alvarado- Rodriguez, A. E. Schmitz, M. Sokolich, K. S. Holabird, T. M. Hazard, M. F. Gyure, and A. T. Hunter, Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots, Appl. Phys. Lett.99, 063109 (2011)

work page 2011
[47]

Z. Shi, C. B. Simmons, J. Prance, J. K. Gamble, M. Friesen, D. E. Savage, M. G. Lagally, S. N. Coppersmith, and M. A. Eriksson, Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot, Appl. Phys. Lett.99, 233108 (2011)

work page 2011
[48]

Scarlino, E

P. Scarlino, E. Kawakami, T. Jullien, D. R. Ward, D. E. Savage, M. G. Lagally, M. Friesen, S. N. Coppersmith, M. A. Eriksson, and L. M. K. Vandersypen, Dressed photon-orbital states in a quantum dot: Intervalley spin resonance, Physical Review B95, 165429 (2017)

work page 2017
[49]

X. Mi, C. G. Péterfalvi, G. Burkard, and J. R. Petta, High-resolution valley spectroscopy of Si quantum dots, Phys. Rev. Lett.119, 176803 (2017)

work page 2017
[50]

R.Ferdous, E.Kawakami, P.Scarlino, M.Nowak, D.R.Ward, D.E.Savage, M.G.Lagally, S.N.Coppersmith, M.Friesen, M. A. Eriksson, L. M. K. Vandersypen, and R. Rahman, Valley dependent anisotropic spin splitting in silicon quantum dots, npj Quantum Information4, 26 (2018)

work page 2018
[51]

X. Mi, S. Kohler, and J. R. Petta, Landau-Zener interferometry of valley-orbit states in Si/SiGe double quantum dots, Phys. Rev. B98, 161404(R) (2018)

work page 2018
[52]

S. F. Neyens, R. H. Foote, B. Thorgrimsson, T. J. Knapp, T. McJunkin, L. M. K. Vandersypen, P. Amin, N. K. Thomas, J. S. Clarke, D. E. Savage, M. G. Lagally, M. Friesen, S. N. Coppersmith, and M. A. Eriksson, The critical role of substrate 27 disorder in valley splitting in Si quantum wells, Appl. Phys. Lett.112, 243107 (2018)

work page 2018
[53]

Borjans, D

F. Borjans, D. Zajac, T. Hazard, and J. Petta, Single-spin relaxation in a synthetic spin-orbit field, Phys. Rev. Applied 11, 044063 (2019)

work page 2019
[54]

S. W. Oh, A. O. Denisov, P. Chen, and J. R. Petta, Cryogen-free scanning gate microscope for the characterization of Si/Si0.7Ge0.3quantum devices at milli-kelvin temperatures,AIP Advances, AIP Advances11, 125122 (2021)

work page 2021
[55]

E. H. Chen, K. Raach, A. Pan, A. A. Kiselev, E. Acuna, J. Z. Blumoff, T. Brecht, M. D. Choi, W. Ha, D. R. Hulbert, M. P. Jura, T. E. Keating, R. Noah, B. Sun, B. J. Thomas, M. G. Borselli, C. Jackson, M. T. Rakher, and R. S. Ross, Detuning axis pulsed spectroscopy of valley-orbital states inSi/Si-Gequantum dots, Phys. Rev. Applied15, 044033 (2021)

work page 2021
[56]

J. C. Marcks, E. Eagen, E. C. Brann, M. P. Losert, T. Oh, J. Reily, C. S. Wang, D. Keith, F. A. Mohiyaddin, F. Luthi, M. J. Curry, J. Zhang, F. J. Heremans, M. Friesen, and M. A. Eriksson, Valley splitting correlations across a silicon quantum well containing germanium, Nature Communications16, 11381 (2025)

work page 2025
[57]

Volmer, T

M. Volmer, T. Struck, J.-S. Tu, S. Trellenkamp, D. D. Esposti, G. Scappucci, Łukasz Cywiński, H. Bluhm, and L. R. Schreiber, Reduction of the impact of the local valley splitting on the coherence of conveyor-belt spin shuttling in28si/sige (2025), arXiv:2510.03773 [quant-ph]

work page arXiv 2025
[58]

Paquelet Wuetz, M

B. Paquelet Wuetz, M. P. Losert, S. Koelling, L. E. A. Stehouwer, A.-M. J. Zwerver, S. G. J. Philips, M. T. Mądzik, X. Xue, G. Zheng, M. Lodari, S. V. Amitonov, N. Samkharadze, A. Sammak, L. M. K. Vandersypen, R. Rahman, S. N. Coppersmith, O. Moutanabbir, M. Friesen, and G. Scappucci, Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum do...

work page 2022
[59]

M. P. Losert, M. A. Eriksson, R. Joynt, R. Rahman, G. Scappucci, S. N. Coppersmith, and M. Friesen, Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells, Phys. Rev. B108, 125405 (2023)

work page 2023
[60]

J. R. F. Lima and G. Burkard, Interface and electromagnetic effects in the valley splitting of Si quantum dots, Mater. Quantum. Technol.3, 025004 (2023)

work page 2023
[61]

L. F. Peña, J. C. Koepke, J. H. Dycus, A. Mounce, A. D. Baczewski, N. T. Jacobson, and E. Bussmann, Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy, npj Quantum Information10, 33 (2024)

work page 2024
[62]

M. P. Losert, M. Oberländer, J. D. Teske, M. Volmer, L. R. Schreiber, H. Bluhm, S. Coppersmith, and M. Friesen, Strategies for enhancing spin-shuttling fidelities inSi/SiGequantum wells with random-alloy disorder, PRX Quantum5, 040322 (2024)

work page 2024
[63]

B. D. Woods, M. P. Losert, R. Joynt, and M. Friesen, Statistical characterization of valley coupling in Si/SiGe quantum dots via g-factor measurements near a valley vortex (2024), arXiv:2507.05160

work page arXiv 2024
[64]

J. R. F. Lima and G. Burkard, Partial Landau-Zener transitions and applications to qubit shuttling, Phys. Rev. B111, 235439 (2025)

work page 2025
[65]

Y. Oda, M. P. Losert, and J. P. Kestner, Suppressing si valley excitation and valley-induced spin dephasing for long- distance shuttling (2024), arXiv:2411.11695

work page arXiv 2024
[66]

Németh, V

R. Németh, V. K. Bandaru, P. Alves, M. P. Losert, E. Brann, O. M. Eskandari, H. Soomro, A. Vivrekar, M. A. Eriksson, and M. Friesen, Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells (2025), arXiv:2412.09574

work page arXiv 2025
[67]

Zhang, A

Y.-N. Zhang, A. S. Mokeev, and V. V. Dobrovitski, Decoherence and fidelity enhancement during shuttling of entangled spin qubits, Phys. Rev. B112, 205301 (2025)

work page 2025
[68]

Friesen, S

M. Friesen, S. Chutia, C. Tahan, and S. N. Coppersmith, Valley splitting theory of SiGe/Si/SiGe quantum wells, Phys. Rev. B75, 115318 (2007)

work page 2007
[69]

Corrigan, J

J. Corrigan, J. P. Dodson, H. E. Ercan, J. C. Abadillo-Uriel, B. Thorgrimsson, T. J. Knapp, N. Holman, T. McJunkin, S. F. Neyens, E. R. MacQuarrie, R. H. Foote, L. F. Edge, M. Friesen, S. N. Coppersmith, and M. A. Eriksson, Coherent control and spectroscopy of a semiconductor quantum dot wigner molecule, Phys. Rev. Lett.127, 127701 (2021)

work page 2021
[70]

H. E. Ercan, S. N. Coppersmith, and M. Friesen, Strong electron-electron interactions in Si/SiGe quantum dots, Phys. Rev. B104, 235302 (2021)

work page 2021
[71]

H. E. Ercan, M. Friesen, and S. N. Coppersmith, Charge-noise resilience of two-electron quantum dots inSi/SiGehet- erostructures, Phys. Rev. Lett.128, 247701 (2022)

work page 2022
[72]

J. C. Abadillo-Uriel, B. Martinez, M. Filippone, and Y.-M. Niquet, Two-body wigner molecularization in asymmetric quantum dot spin qubits, Phys. Rev. B104, 195305 (2021)

work page 2021
[73]

Yannouleas and U

C. Yannouleas and U. Landman, Wigner molecules and hybrid qubits, Journal of Physics: Condensed Matter34, 21LT01 (2022)

work page 2022
[74]

Yannouleas and U

C. Yannouleas and U. Landman, Molecular formations and spectra due to electron correlations in three-electron hybrid double-well qubits, Phys. Rev. B105, 205302 (2022)

work page 2022
[75]

C.YannouleasandU.Landman,Valleytronicfullconfiguration-interactionapproach: Applicationtotheexcitationspectra of si double-dot qubits, Phys. Rev. B106, 195306 (2022)

work page 2022
[76]

H. E. Ercan, C. R. Anderson, S. N. Coppersmith, M. Friesen, and M. F. Gyure, Multielectron dots provide faster Rabi oscillations when the core electrons are strongly confined (2023), arXiv:2303.02958

work page arXiv 2023
[77]

B. D. Woods, M. A. Eriksson, R. Joynt, and M. Friesen, Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration, Phys. Rev. B107, 035418 (2023)

work page 2023
[78]

B. D. Woods, M. P. Losert, R. Joynt, and M. Friesen, g-factor theory of Si/SiGe quantum dots: spin-valley and giant renormalization effects (2024), arXiv:2412.19795

work page arXiv 2024
[79]

Winkler,Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems (Springer Tracts in Modern Physics)(Springer) appendix B

R. Winkler,Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems (Springer Tracts in Modern Physics)(Springer) appendix B. 28

work page
[80]

Degli Esposti, L

D. Degli Esposti, L. E. A. Stehouwer, Ö. Gül, N. Samkharadze, C. Déprez, M. Meyer, I. N. Meijer, L. Tryputen, S. Karwal, M. Botifoll, J. Arbiol, S. V. Amitonov, L. M. K. Vandersypen, A. Sammak, M. Veldhorst, and G. Scappucci, Low disorder and high valley splitting in silicon, npj Quantum Information10, 32 (2024)

work page 2024

Showing first 80 references.

[1] [1]

We see that average infidelities are well below10 −4 in all cases

(orange), [110] (green), and [010] (blue) di- rections, where we have removed all second-order processes. We see that average infidelities are well below10 −4 in all cases. (a)QubitAncilla CNOT T unneling Heralding(b) (c) (d) Figure S8. Schematic illustration of a scheme to prepare the two-electron logical states from two Loss-DiVincenzo qubits. (a) The s...

work page

[2] [2]

Loss and D

D. Loss and D. P. DiVincenzo, Quantum computation with quantum dots, Phys. Rev. A57, 120 (1998)

work page 1998

[3] [3]

F. A. Zwanenburg, A. S. Dzurak, A. Morello, M. Y. Simmons, L. C. L. Hollenberg, G. Klimeck, S. Rogge, S. N. Copper- smith, and M. A. Eriksson, Silicon quantum electronics, Rev. Mod. Phys.85, 961 (2013)

work page 2013

[4] [4]

Burkard, T

G. Burkard, T. D. Ladd, A. Pan, J. M. Nichol, and J. R. Petta, Semiconductor spin qubits, Rev. Mod. Phys.95, 025003 (2023)

work page 2023

[5] [5]

Yoneda, K

J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K. M. Itoh, and S. Tarucha, A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%, Nature Nanotechnology13, 102 (2018)

work page 2018

[6] [6]

X. Xue, M. Russ, N. Samkharadze, B. Undseth, A. Sammak, G. Scappucci, and L. M. K. Vandersypen, Quantum logic with spin qubits crossing the surface code threshold, Nature601, 343 (2022)

work page 2022

[7] [7]

Noiri, K

A. Noiri, K. Takeda, T. Nakajima, T. Kobayashi, A. Sammak, G. Scappucci, and S. Tarucha, Fast universal quantum gate above the fault-tolerance threshold in silicon, Nature601, 338 (2022)

work page 2022

[8] [8]

A. R. Mills, C. R. Guinn, M. J. Gullans, A. J. Sigillito, M. M. Feldman, E. Nielsen, and J. R. Petta, Two-qubit silicon quantum processor with operation fidelity exceeding 99%, Science Advances8, eabn5130 (2022)

work page 2022

[9] [9]

W. Ha, S. D. Ha, M. D. Choi, Y. Tang, A. E. Schmitz, M. P. Levendorf, K. Lee, J. M. Chappell, T. S. Adams, D. R. Hulbert, E. Acuna, R. S. Noah, J. W. Matten, M. P. Jura, J. A. Wright, M. T. Rakher, and M. G. Borselli, A flexible design platform for Si/SiGe exchange-only qubits with low disorder,Nano Letters, Nano Letters22, 1443 (2022)

work page 2022

[10] [10]

Neyens, O

S. Neyens, O. K. Zietz, T. F. Watson, F. Luthi, A. Nethwewala, H. C. George, E. Henry, M. Islam, A. J. Wagner, F. Borjans, E. J. Connors, J. Corrigan, M. J. Curry, D. Keith, R. Kotlyar, L. F. Lampert, M. T. Mądzik, K. Millard, F. A. Mohiyaddin, S. Pellerano, R. Pillarisetty, M. Ramsey, R. Savytskyy, S. Schaal, G. Zheng, J. Ziegler, N. C. Bishop, S. Bojars...

work page 2024

[11] [11]

Trifunovic, O

L. Trifunovic, O. Dial, M. Trif, J. R. Wootton, R. Abebe, A. Yacoby, and D. Loss, Long-distance spin-spin coupling via floating gates, Phys. Rev. X2, 011006 (2012)

work page 2012

[12] [12]

Friesen, A

M. Friesen, A. Biswas, X. Hu, and D. Lidar, Efficient multiqubit entanglement via a spin bus, Phys. Rev. Lett.98, 230503 (2007)

work page 2007

[13] [13]

F. R. Braakman, P. Barthelemy, C. Reichl, W. Wegscheider, and L. M. K. Vandersypen, Long-distance coherent coupling in a quantum dot array, Nature Nanotechnology8, 432 (2013)

work page 2013

[14] [14]

Fujita, T

T. Fujita, T. A. Baart, C. Reichl, W. Wegscheider, and L. M. K. Vandersypen, Coherent shuttle of electron-spin states, npj Quantum Information3, 22 (2017)

work page 2017

[15] [15]

Serina, C

M. Serina, C. Kloeffel, and D. Loss, Long-range interaction between charge and spin qubits in quantum dots, Phys. Rev. B95, 245422 (2017)

work page 2017

[16] [16]

G. Tosi, F. A. Mohiyaddin, V. Schmitt, S. Tenberg, R. Rahman, G. Klimeck, and A. Morello, Silicon quantum processor with robust long-distance qubit couplings, Nature Communications8, 450 (2017)

work page 2017

[17] [17]

A. J. Landig, J. V. Koski, P. Scarlino, U. C. Mendes, A. Blais, C. Reichl, W. Wegscheider, A. Wallraff, K. Ensslin, and T. Ihn, Coherent spin–photon coupling using a resonant exchange qubit, Nature560, 179 (2018)

work page 2018

[18] [18]

Samkharadze, G

N. Samkharadze, G. Zheng, N. Kalhor, D. Brousse, A. Sammak, U. C. Mendes, A. Blais, G. Scappucci, and L. M. K. Vandersypen, Strong spin-photon coupling in silicon, Science359, 1123 (2018)

work page 2018

[19] [19]

A. R. Mills, M. M. Feldman, C. Monical, P. J. Lewis, K. W. Larson, A. M. Mounce, and J. R. Petta, Computer-automated tuning procedures for semiconductor quantum dot arrays, Applied Physics Letters115, 113501 (2019)

work page 2019

[20] [20]

Warren, E

A. Warren, E. Barnes, and S. E. Economou, Long-distance entangling gates between quantum dot spins mediated by a superconducting resonator, Phys. Rev. B100, 161303 (2019)

work page 2019

[21] [21]

A. J. Sigillito, M. J. Gullans, L. F. Edge, M. Borselli, and J. R. Petta, Coherent transfer of quantum information in a silicon double quantum dot using resonant swap gates, npj Quantum Information5, 110 (2019)

work page 2019

[22] [22]

Yoneda, W

J. Yoneda, W. Huang, M. Feng, C. H. Yang, K. W. Chan, T. Tanttu, W. Gilbert, R. C. C. Leon, F. E. Hudson, K. M. Itoh, A. Morello, S. D. Bartlett, A. Laucht, A. Saraiva, and A. S. Dzurak, Coherent spin qubit transport in silicon, Nature Communications12, 4114 (2021)

work page 2021

[23] [23]

H. Qiao, Y. P. Kandel, S. Fallahi, G. C. Gardner, M. J. Manfra, X. Hu, and J. M. Nichol, Long-distance superexchange between semiconductor quantum-dot electron spins, Phys. Rev. Lett.126, 017701 (2021)

work page 2021

[24] [24]

Holman, D

N. Holman, D. Rosenberg, D. Yost, J. L. Yoder, R. Das, W. D. Oliver, R. McDermott, and M. A. Eriksson, 3D inte- gration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator, npj Quantum Information7, 137 (2021)

work page 2021

[25] [25]

Jadot, P.-A

B. Jadot, P.-A. Mortemousque, E. Chanrion, V. Thiney, A. Ludwig, A. D. Wieck, M. Urdampilleta, C. Bäuerle, and 26 T. Meunier, Distant spin entanglement via fast and coherent electron shuttling, Nature Nanotechnology16, 570 (2021)

work page 2021

[26] [26]

Noiri, K

A. Noiri, K. Takeda, T. Nakajima, T. Kobayashi, A. Sammak, G. Scappucci, and S. Tarucha, A shuttling-based two-qubit logic gate for linking distant silicon quantum processors, Nature Communications13, 5740 (2022)

work page 2022

[27] [27]

J. M. Boter, J. P. Dehollain, J. P. Van Dijk, Y. Xu, T. Hensgens, R. Versluis, H. W. Naus, J. S. Clarke, M. Veldhorst, F. Sebastiano,et al., Spiderweb array: a sparse spin-qubit array, Physical Review Applied18, 024053 (2022)

work page 2022

[28] [28]

Z. Wang, M. Feng, S. Serrano, W. Gilbert, R. C. C. Leon, T. Tanttu, P. Mai, D. Liang, J. Y. Huang, Y. Su, W. H. Lim, F. E. Hudson, C. C. Escott, A. Morello, C. H. Yang, A. S. Dzurak, A. Saraiva, and A. Laucht, Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry, Advanced Materials35, 2208557 (2023)

work page 2023

[29] [29]

Zwerver, S

A. Zwerver, S. Amitonov, S. de Snoo, M. Mądzik, M. Rimbach-Russ, A. Sammak, G. Scappucci, and L. Vandersypen, Shuttling an electron spin through a silicon quantum dot array, PRX Quantum4, 030303 (2023)

work page 2023

[30] [30]

C. D. White, A. Sigillito, and M. J. Gullans, Electrical interconnects for silicon spin qubits (2024), arXiv:2411.01366

work page arXiv 2024

[31] [31]

J. M. Taylor, H. A. Engel, W. Dur, A. Yacoby, C. M. Marcus, P. Zoller, and M. D. Lukin, Fault-tolerant architecture for quantum computation using electrically controlled semiconductor spins, Nat. Phys.1, 177 (2005)

work page 2005

[32] [32]

Seidler, T

I. Seidler, T. Struck, R. Xue, N. Focke, S. Trellenkamp, H. Bluhm, and L. R. Schreiber, Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture, npj Quantum Information8, 100 (2022)

work page 2022

[33] [33]

Langrock, J

V. Langrock, J. A. Krzywda, N. Focke, I. Seidler, L. R. Schreiber, and L. Cywiński, Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO2, PRX Quantum4, 020305 (2023)

work page 2023

[34] [34]

Ermoneit, B

L. Ermoneit, B. Schmidt, T. Koprucki, J. Fuhrmann, T. Breiten, A. Sala, N. Ciroth, R. Xue, L. R. Schreiber, and M. Kantner, Optimal control of conveyor-mode spin-qubit shuttling in a Si/SiGe quantum bus in the presence of charged defects, WIAS Preprint3082, 10.20347/WIAS.PREPRINT.3082 (2023)

work page doi:10.20347/wias.preprint.3082 2023

[35] [35]

Struck, M

T. Struck, M. Volmer, L. Visser, T. Offermann, R. Xue, J.-S. Tu, S. Trellenkamp, Ł. Cywiński, H. Bluhm, and L. R. Schreiber, Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe, Nature Communications15, 1325 (2024)

work page 2024

[36] [36]

R. Xue, M. Beer, I. Seidler, S. Humpohl, J.-S. Tu, S. Trellenkamp, T. Struck, H. Bluhm, and L. R. Schreiber, Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function, Nature Communications15, 2296 (2024)

work page 2024

[37] [37]

Volmer, T

M. Volmer, T. Struck, A. Sala, B. Chen, M. Oberländer, T. Offermann, R. Xue, L. Visser, J.-S. Tu, S. Trellenkamp, Ł.Cywiński, H.Bluhm,andL.R.Schreiber,Mappingofvalleysplittingbyconveyor-modespin-coherentelectronshuttling, npj Quantum Information10, 61 (2024)

work page 2024

[38] [38]

Künne, A

M. Künne, A. Willmes, M. Oberländer, C. Gorjaew, J. D. Teske, H. Bhardwaj, M. Beer, E. Kammerloher, R. Otten, I. Seidler, R. Xue, L. R. Schreiber, and H. Bluhm, The spinbus architecture for scaling spin qubits with electron shuttling, Nature Communications15, 4977 (2024)

work page 2024

[39] [39]

De Smet, Y

M. De Smet, Y. Matsumoto, A.-M. J. Zwerver, L. Tryputen, S. L. de Snoo, S. V. Amitonov, A. Sammak, N. Samkharadze, Ö. Gül, R. N. Wasserman,et al., High-fidelity single-spin shuttling in silicon (2024), arXiv:2406.07267 [cond-mat.mes-hall]

work page arXiv 2024

[40] [40]

A. S. Mokeev, Y.-N. Zhang, and V. V. Dobrovitski, Modeling of decoherence and fidelity enhancement during transport of entangled qubits (2024), arXiv:2409.04404

work page arXiv 2024

[41] [41]

M. Jeon, S. C. Benjamin, and A. J. Fisher, Robustness of electron charge shuttling: Architectures, pulses, charge defects, and noise thresholds, Phys. Rev. B111, 195302 (2025)

work page 2025

[42] [42]

Y. Oda, M. P. Losert, and J. P. Kestner, Suppressing si valley excitation and valley-induced spin dephasing for long- distance shuttling, Phys. Rev. Lett.136, 020802 (2026)

work page 2026

[43] [43]

David, A

A. David, A. M. Pazhedath, L. R. Schreiber, T. Calarco, H. Bluhm, and F. Motzoi, Long distance spin shuttling enabled by few-parameter velocity optimization (2024), arXiv:2409.07600

work page arXiv 2024

[44] [44]

D. M. Zajac, T. M. Hazard, X. Mi, K. Wang, and J. R. Petta, A reconfigurable gate architecture for Si/SiGe quantum dots, Appl. Phys. Lett.106, 223507 (2015)

work page 2015

[45] [45]

Hollmann, T

A. Hollmann, T. Struck, V. Langrock, A. Schmidbauer, F. Schauer, T. Leonhardt, K. Sawano, H. Riemann, N. V. Abrosimov, D. Bougeard, and L. R. Schreiber, Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/SixGe1−x quantum dot, Phys. Rev. Applied13, 034068 (2020)

work page 2020

[46] [46]

M. G. Borselli, K. Eng, E. T. Croke, B. M. Maune, B. Huang, R. S. Ross, A. A. Kiselev, P. W. Deelman, I. Alvarado- Rodriguez, A. E. Schmitz, M. Sokolich, K. S. Holabird, T. M. Hazard, M. F. Gyure, and A. T. Hunter, Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots, Appl. Phys. Lett.99, 063109 (2011)

work page 2011

[47] [47]

Z. Shi, C. B. Simmons, J. Prance, J. K. Gamble, M. Friesen, D. E. Savage, M. G. Lagally, S. N. Coppersmith, and M. A. Eriksson, Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot, Appl. Phys. Lett.99, 233108 (2011)

work page 2011

[48] [48]

Scarlino, E

P. Scarlino, E. Kawakami, T. Jullien, D. R. Ward, D. E. Savage, M. G. Lagally, M. Friesen, S. N. Coppersmith, M. A. Eriksson, and L. M. K. Vandersypen, Dressed photon-orbital states in a quantum dot: Intervalley spin resonance, Physical Review B95, 165429 (2017)

work page 2017

[49] [49]

X. Mi, C. G. Péterfalvi, G. Burkard, and J. R. Petta, High-resolution valley spectroscopy of Si quantum dots, Phys. Rev. Lett.119, 176803 (2017)

work page 2017

[50] [50]

R.Ferdous, E.Kawakami, P.Scarlino, M.Nowak, D.R.Ward, D.E.Savage, M.G.Lagally, S.N.Coppersmith, M.Friesen, M. A. Eriksson, L. M. K. Vandersypen, and R. Rahman, Valley dependent anisotropic spin splitting in silicon quantum dots, npj Quantum Information4, 26 (2018)

work page 2018

[51] [51]

X. Mi, S. Kohler, and J. R. Petta, Landau-Zener interferometry of valley-orbit states in Si/SiGe double quantum dots, Phys. Rev. B98, 161404(R) (2018)

work page 2018

[52] [52]

S. F. Neyens, R. H. Foote, B. Thorgrimsson, T. J. Knapp, T. McJunkin, L. M. K. Vandersypen, P. Amin, N. K. Thomas, J. S. Clarke, D. E. Savage, M. G. Lagally, M. Friesen, S. N. Coppersmith, and M. A. Eriksson, The critical role of substrate 27 disorder in valley splitting in Si quantum wells, Appl. Phys. Lett.112, 243107 (2018)

work page 2018

[53] [53]

Borjans, D

F. Borjans, D. Zajac, T. Hazard, and J. Petta, Single-spin relaxation in a synthetic spin-orbit field, Phys. Rev. Applied 11, 044063 (2019)

work page 2019

[54] [54]

S. W. Oh, A. O. Denisov, P. Chen, and J. R. Petta, Cryogen-free scanning gate microscope for the characterization of Si/Si0.7Ge0.3quantum devices at milli-kelvin temperatures,AIP Advances, AIP Advances11, 125122 (2021)

work page 2021

[55] [55]

E. H. Chen, K. Raach, A. Pan, A. A. Kiselev, E. Acuna, J. Z. Blumoff, T. Brecht, M. D. Choi, W. Ha, D. R. Hulbert, M. P. Jura, T. E. Keating, R. Noah, B. Sun, B. J. Thomas, M. G. Borselli, C. Jackson, M. T. Rakher, and R. S. Ross, Detuning axis pulsed spectroscopy of valley-orbital states inSi/Si-Gequantum dots, Phys. Rev. Applied15, 044033 (2021)

work page 2021

[56] [56]

J. C. Marcks, E. Eagen, E. C. Brann, M. P. Losert, T. Oh, J. Reily, C. S. Wang, D. Keith, F. A. Mohiyaddin, F. Luthi, M. J. Curry, J. Zhang, F. J. Heremans, M. Friesen, and M. A. Eriksson, Valley splitting correlations across a silicon quantum well containing germanium, Nature Communications16, 11381 (2025)

work page 2025

[57] [57]

Volmer, T

M. Volmer, T. Struck, J.-S. Tu, S. Trellenkamp, D. D. Esposti, G. Scappucci, Łukasz Cywiński, H. Bluhm, and L. R. Schreiber, Reduction of the impact of the local valley splitting on the coherence of conveyor-belt spin shuttling in28si/sige (2025), arXiv:2510.03773 [quant-ph]

work page arXiv 2025

[58] [58]

Paquelet Wuetz, M

B. Paquelet Wuetz, M. P. Losert, S. Koelling, L. E. A. Stehouwer, A.-M. J. Zwerver, S. G. J. Philips, M. T. Mądzik, X. Xue, G. Zheng, M. Lodari, S. V. Amitonov, N. Samkharadze, A. Sammak, L. M. K. Vandersypen, R. Rahman, S. N. Coppersmith, O. Moutanabbir, M. Friesen, and G. Scappucci, Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum do...

work page 2022

[59] [59]

M. P. Losert, M. A. Eriksson, R. Joynt, R. Rahman, G. Scappucci, S. N. Coppersmith, and M. Friesen, Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells, Phys. Rev. B108, 125405 (2023)

work page 2023

[60] [60]

J. R. F. Lima and G. Burkard, Interface and electromagnetic effects in the valley splitting of Si quantum dots, Mater. Quantum. Technol.3, 025004 (2023)

work page 2023

[61] [61]

L. F. Peña, J. C. Koepke, J. H. Dycus, A. Mounce, A. D. Baczewski, N. T. Jacobson, and E. Bussmann, Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy, npj Quantum Information10, 33 (2024)

work page 2024

[62] [62]

M. P. Losert, M. Oberländer, J. D. Teske, M. Volmer, L. R. Schreiber, H. Bluhm, S. Coppersmith, and M. Friesen, Strategies for enhancing spin-shuttling fidelities inSi/SiGequantum wells with random-alloy disorder, PRX Quantum5, 040322 (2024)

work page 2024

[63] [63]

B. D. Woods, M. P. Losert, R. Joynt, and M. Friesen, Statistical characterization of valley coupling in Si/SiGe quantum dots via g-factor measurements near a valley vortex (2024), arXiv:2507.05160

work page arXiv 2024

[64] [64]

J. R. F. Lima and G. Burkard, Partial Landau-Zener transitions and applications to qubit shuttling, Phys. Rev. B111, 235439 (2025)

work page 2025

[65] [65]

Y. Oda, M. P. Losert, and J. P. Kestner, Suppressing si valley excitation and valley-induced spin dephasing for long- distance shuttling (2024), arXiv:2411.11695

work page arXiv 2024

[66] [66]

Németh, V

R. Németh, V. K. Bandaru, P. Alves, M. P. Losert, E. Brann, O. M. Eskandari, H. Soomro, A. Vivrekar, M. A. Eriksson, and M. Friesen, Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells (2025), arXiv:2412.09574

work page arXiv 2025

[67] [67]

Zhang, A

Y.-N. Zhang, A. S. Mokeev, and V. V. Dobrovitski, Decoherence and fidelity enhancement during shuttling of entangled spin qubits, Phys. Rev. B112, 205301 (2025)

work page 2025

[68] [68]

Friesen, S

M. Friesen, S. Chutia, C. Tahan, and S. N. Coppersmith, Valley splitting theory of SiGe/Si/SiGe quantum wells, Phys. Rev. B75, 115318 (2007)

work page 2007

[69] [69]

Corrigan, J

J. Corrigan, J. P. Dodson, H. E. Ercan, J. C. Abadillo-Uriel, B. Thorgrimsson, T. J. Knapp, N. Holman, T. McJunkin, S. F. Neyens, E. R. MacQuarrie, R. H. Foote, L. F. Edge, M. Friesen, S. N. Coppersmith, and M. A. Eriksson, Coherent control and spectroscopy of a semiconductor quantum dot wigner molecule, Phys. Rev. Lett.127, 127701 (2021)

work page 2021

[70] [70]

H. E. Ercan, S. N. Coppersmith, and M. Friesen, Strong electron-electron interactions in Si/SiGe quantum dots, Phys. Rev. B104, 235302 (2021)

work page 2021

[71] [71]

H. E. Ercan, M. Friesen, and S. N. Coppersmith, Charge-noise resilience of two-electron quantum dots inSi/SiGehet- erostructures, Phys. Rev. Lett.128, 247701 (2022)

work page 2022

[72] [72]

J. C. Abadillo-Uriel, B. Martinez, M. Filippone, and Y.-M. Niquet, Two-body wigner molecularization in asymmetric quantum dot spin qubits, Phys. Rev. B104, 195305 (2021)

work page 2021

[73] [73]

Yannouleas and U

C. Yannouleas and U. Landman, Wigner molecules and hybrid qubits, Journal of Physics: Condensed Matter34, 21LT01 (2022)

work page 2022

[74] [74]

Yannouleas and U

C. Yannouleas and U. Landman, Molecular formations and spectra due to electron correlations in three-electron hybrid double-well qubits, Phys. Rev. B105, 205302 (2022)

work page 2022

[75] [75]

C.YannouleasandU.Landman,Valleytronicfullconfiguration-interactionapproach: Applicationtotheexcitationspectra of si double-dot qubits, Phys. Rev. B106, 195306 (2022)

work page 2022

[76] [76]

H. E. Ercan, C. R. Anderson, S. N. Coppersmith, M. Friesen, and M. F. Gyure, Multielectron dots provide faster Rabi oscillations when the core electrons are strongly confined (2023), arXiv:2303.02958

work page arXiv 2023

[77] [77]

B. D. Woods, M. A. Eriksson, R. Joynt, and M. Friesen, Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration, Phys. Rev. B107, 035418 (2023)

work page 2023

[78] [78]

B. D. Woods, M. P. Losert, R. Joynt, and M. Friesen, g-factor theory of Si/SiGe quantum dots: spin-valley and giant renormalization effects (2024), arXiv:2412.19795

work page arXiv 2024

[79] [79]

Winkler,Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems (Springer Tracts in Modern Physics)(Springer) appendix B

R. Winkler,Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems (Springer Tracts in Modern Physics)(Springer) appendix B. 28

work page

[80] [80]

Degli Esposti, L

D. Degli Esposti, L. E. A. Stehouwer, Ö. Gül, N. Samkharadze, C. Déprez, M. Meyer, I. N. Meijer, L. Tryputen, S. Karwal, M. Botifoll, J. Arbiol, S. V. Amitonov, L. M. K. Vandersypen, A. Sammak, M. Veldhorst, and G. Scappucci, Low disorder and high valley splitting in silicon, npj Quantum Information10, 32 (2024)

work page 2024