Mobile spin qubits in silicon can leapfrog over occupied dots by exploiting low valley splitting, enabling new connectivity routes and SWAP^γ entangling gates.
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5 Pith papers cite this work. Polarity classification is still indexing.
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Pith papers citing it
years
2026 5verdicts
UNVERDICTED 5representative citing papers
Alloy disorder in wiggle wells both randomizes and enables EDSR, with sweet spots permitting high-fidelity Rabi oscillations despite charge noise.
A spin-triplet encoding based on valley-singlet states makes shuttling fidelities in Si/SiGe quantum wells higher and more robust to small valley splittings by suppressing Landau-Zener excitations.
A Tukey-window-based smooth velocity shuttling protocol reduces valley excitations and average spin infidelity in disordered Si/SiGe quantum dots via analytical design and statistical simulations.
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.
citing papers explorer
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Spin Qubit Leapfrogging: Dynamics of shuttling electrons on top of another
Mobile spin qubits in silicon can leapfrog over occupied dots by exploiting low valley splitting, enabling new connectivity routes and SWAP^γ entangling gates.
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High-fidelity EDSR in Si/SiGe Wiggle Wells
Alloy disorder in wiggle wells both randomizes and enables EDSR, with sweet spots permitting high-fidelity Rabi oscillations despite charge noise.
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Using a spin-triplet encoding to enhance shuttling fidelities in Si/SiGe quantum wells
A spin-triplet encoding based on valley-singlet states makes shuttling fidelities in Si/SiGe quantum wells higher and more robust to small valley splittings by suppressing Landau-Zener excitations.
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Smooth velocity shuttling for suppressing valley excitations in disordered Si/SiGe quantum dots
A Tukey-window-based smooth velocity shuttling protocol reduces valley excitations and average spin infidelity in disordered Si/SiGe quantum dots via analytical design and statistical simulations.
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Singlet-triplet oscillations in multivalley Si double quantum dots
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.