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arxiv: 2605.24790 · v2 · pith:JEXOTVNL · submitted 2026-05-24 · cond-mat.mes-hall · quant-ph

High-fidelity EDSR in Si/SiGe Wiggle Wells

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classification cond-mat.mes-hall quant-ph
keywords EDSRSi/SiGe quantum wellsWiggle Wellsalloy disorderRabi frequencyvalley splittingsweet spotsspin qubits
0
0 comments X

The pith

Alloy disorder in Si/SiGe Wiggle Wells randomizes the Rabi frequency but still permits fast EDSR at most locations and high-fidelity operations at sweet spots.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper investigates electric dipole spin resonance in Si/SiGe quantum wells with Ge concentration oscillations called Wiggle Wells. Alloy disorder randomizes the valley phase, which causes the Rabi frequency to vary spatially according to its cosine dependence. Despite this randomization, fast EDSR remains possible at most locations in a sample. A new driving mechanism appears from valley dipoles in areas of low valley splitting. Sweet spots are found where EDSR stays insensitive to electric field fluctuations, and high-fidelity Rabi oscillations hold under realistic charge noise.

Core claim

Alloy disorder affects EDSR in two main ways. The Rabi frequency acquires a dependence on the valley phase, given by cos phi_s,s, which causes spatial randomization of the Rabi frequency. Despite this variability, fast EDSR can be achieved at most locations across a given sample. A new Rabi driving mechanism emerges, enabled by valley dipoles and the hybridization of ground and excited valley states. Sweet spots are located where EDSR is relatively insensitive to electric-field fluctuations, and high-fidelity Rabi oscillations can be achieved in the presence of realistic charge noise.

What carries the argument

The cosine dependence of the Rabi frequency on the valley phase phi_s,s together with the identification of sweet spots that are insensitive to electric-field fluctuations.

Load-bearing premise

The model of alloy disorder and the assumed statistics of charge noise are sufficient to predict the existence and location of sweet spots where EDSR fidelity remains high.

What would settle it

An experiment that measures Rabi oscillation fidelity at the predicted sweet spots under realistic charge noise and finds fidelities substantially below the claimed high values would falsify the result.

Figures

Figures reproduced from arXiv: 2605.24790 by Avani Vivrekar, Benjamin D. Woods, Hudaiba Soomro, M. A. Eriksson, Mark Friesen, Minyoung Kim.

Figure 1
Figure 1. Figure 1: FIG. 1. Schematic illustration of EDSR operation in a long-period Si Wiggle Well. (a) A quantum well is formed between [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2. Rabi frequency distributions in the presence of alloy [PITH_FULL_IMAGE:figures/full_fig_p005_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3. Typical disordered landscapes, for several parame [PITH_FULL_IMAGE:figures/full_fig_p006_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4. Identifying high-fidelity regions of EDSR. (a) A [PITH_FULL_IMAGE:figures/full_fig_p007_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5. Spatial maps of scaled dephasing rates and valley phases ( [PITH_FULL_IMAGE:figures/full_fig_p009_5.png] view at source ↗
Figure 6
Figure 6. Figure 6: FIG. 6. Histograms of scaled Rabi frequencies, where [PITH_FULL_IMAGE:figures/full_fig_p010_6.png] view at source ↗
Figure 7
Figure 7. Figure 7: FIG. 7. Numerical verification of the Rabi frequency formula, [PITH_FULL_IMAGE:figures/full_fig_p013_7.png] view at source ↗
Figure 8
Figure 8. Figure 8: FIG. 8. Ratios of in-plane and out-of-plane electric-field fluc [PITH_FULL_IMAGE:figures/full_fig_p016_8.png] view at source ↗
read the original abstract

Si/SiGe quantum wells that incorporate Ge concentration oscillations, known as long-period Wiggle Wells, have been shown to enhance the Dresselhaus spin-orbit coupling of conduction-band electrons. Such intrinsic spin-orbit coupling is desirable when performing spin-qubit gate operations based on electric dipole spin resonance (EDSR) because it eliminates the need for external micromagnets. However, random-alloy disorder plays a key role in this materials system by spatially randomizing the valley splitting and the valley phase $\phi_{s,s}$, and it has not been fully accounted for in recent EDSR analyses. Here, we show that alloy disorder affects EDSR in two main ways. First, the Rabi frequency $\Omega$ acquires a dependence on the valley phase, given by $\cos\phi_{s,s}$, which causes spatial randomization of $\Omega$. Despite this variability, we show that fast EDSR can be achieved at most locations across a given sample. Second, a new Rabi driving mechanism emerges, enabled by valley dipoles and the hybridization of ground and excited valley states, which arise from alloy disorder and EDSR driving, respectively. This mechanism is dominant in regions of low valley splitting. Alloy disorder can therefore strengthen EDSR, but it can also cause gradients in $\Omega$ that lead to dephasing in the rotating frame. We explore this problem by first locating "sweet spots," where EDSR is relatively insensitive to electric-field fluctuations. We then show that high-fidelity Rabi oscillations can be achieved in the presence of realistic charge noise. These results suggest that Wiggle Wells are a promising platform for high-quality, micromagnet-free gate operations.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

0 major / 2 minor

Summary. The manuscript examines alloy disorder effects on EDSR in Si/SiGe Wiggle Wells. It shows that the Rabi frequency Ω acquires a cos φ_{s,s} dependence on the valley phase, leading to spatial randomization, yet fast EDSR remains possible at most sites. A secondary valley-dipole driving mechanism is identified for low valley-splitting regions. Sweet spots insensitive to electric-field fluctuations are located numerically, and high-fidelity Rabi oscillations are demonstrated under realistic charge-noise trajectories using explicit disorder Hamiltonians and noise spectra.

Significance. If the numerical results hold, the work provides concrete evidence that Wiggle Wells can support micromagnet-free, high-fidelity EDSR despite alloy disorder, addressing a central materials challenge for Si spin qubits. The explicit modeling of the valley-phase dependence, the valley-dipole mechanism, and propagation of charge-noise trajectories to fidelity metrics supplies reproducible, falsifiable predictions that strengthen the case for this platform.

minor comments (2)
  1. [Results section on sweet spots and fidelity] The definition of the fidelity metric (e.g., how the rotating-frame dephasing from Ω gradients is quantified) should be stated explicitly in the main text rather than deferred to the supplement, as it is central to the high-fidelity claim.
  2. Figure captions for the spatial maps of Ω and sweet-spot locations should include the precise disorder realization parameters (e.g., Ge oscillation amplitude and correlation length) used in the simulations.

Simulated Author's Rebuttal

0 responses · 0 unresolved

We thank the referee for the positive and accurate summary of our manuscript, as well as the recommendation for minor revision. No specific major comments were raised in the report.

Circularity Check

0 steps flagged

No significant circularity detected

full rationale

The derivation proceeds from an explicit disorder Hamiltonian to the valley-phase dependence of Ω (via cos φ_{s,s}), then to numerical identification of sweet spots and fidelity under charge-noise trajectories. All load-bearing steps are defined by the stated physical model and simulation protocol rather than by fitting the target fidelity or Rabi frequency to the same data, and no self-citation chain is invoked to justify uniqueness or ansatz choices. The modeling assumptions are internally consistent and externally falsifiable, satisfying the criteria for a self-contained derivation.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

The central claims rest on an unstated model of random-alloy disorder, an assumed distribution of charge noise, and the validity of the effective Hamiltonian used to derive the Rabi-frequency expression; none of these are independently verified in the abstract.

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discussion (0)

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Reference graph

Works this paper leans on

56 extracted references · 4 canonical work pages · 1 internal anchor

  1. [1]

    spin-orbit phase

    cos(ωt)describes the instantaneous 4 center position of the oscillating harmonic confinement potential. This transformation is performed without ap- proximations, and has the effect of eliminating the driv- ing term in Eq. (6); however, the time dependence is then transferred to the wave function through the definition χnx,ny(x, y;t) =χ nx,ny(x, y−y 0(t))...

  2. [2]

    valley vor- tices

    (see Appendix D). As consistent with previous work [22, 23, 28], the valley splitting is seen to fluctuate dra- matically across the device. These fluctuations reveal the presence of valley vortices, which are points where Ev(x, y) = 0[29]. The valley phaseϕ s,s also fluctuates randomly, as reported in Fig. 3(b). Here, the valley vor- tices are identified...

  3. [3]

    pho- ton number

    Spatial maps of these quantities are plotted in Figs. 3(d) and 3(e), where we chooseB= 20mT. We see that the results vary over many orders of magnitude and exhibit some interesting features. For example, regions near valley vortices have largeΓRabi, caused by largeΩv gradients. We also observe fine line- like features of low-Ev, connecting the vortices. W...

  4. [4]

    Projecting onto the lateral basis states We now consider discretized versions of the quan- tum dot wave functions, evaluated at the points(ρi, zj), whereρ i = (x i, yi)is a lateral grid point, andz j is the position of atomic layerj. We define the alloy disorder matrix element atzj as Vn,n′(ρd;z j) = X i Vdis(ρi, zj)¯χn(ρi;ρ d)¯χn′(ρi;ρ d), (D4) where¯χ n...

  5. [5]

    Thus, our goal is to determine the dis- order matrix elementsVs,s(ρi, zj)andV py,s(ρi, zj), eval- uated at a discrete set of lateral positions{ρ1,

    Generating spatial maps To compute spatial maps of the valley coupling param- eters, we must first generate spatial maps ofVs,s(ρi, zj) andV py,s(ρi, zj). Thus, our goal is to determine the dis- order matrix elementsVs,s(ρi, zj)andV py,s(ρi, zj), eval- uated at a discrete set of lateral positions{ρ1, . . . ,ρN }, for a given atomic layerz j. We collect th...

  6. [6]

    Calculating valley-coupling parameters Making use of these randomly generated (but corre- lated) disorder parameters, we can now compute different valley-coupling parameters of interest. In the effective mass approximation, the Hamiltonian along the growth directionzis given by ˜H= ℏ2 2ml ˆk2 z +V conf(z) +V s,s(z;ρ d) +eF zz,(D15) wherem l = 0.91m e deno...

  7. [7]

    longitudinal,

    Same-site covariance functions for the valley-coupling matrix elements The previous sections outlined the procedure used to determine the spatial maps of the valley parameters. In this Appendix, we derive the same-site variance and co- variance of the real and imaginary components of the intervalley matrix element,∆n,n′, reported in the main text [Eq. (19...

  8. [8]

    Loss and D

    D. Loss and D. P. DiVincenzo, Quantum computation with quantum dots, Phys. Rev. A57, 120 (1998)

  9. [9]

    Burkard, T

    G. Burkard, T. D. Ladd, A. Pan, J. M. Nichol, and J. R. 17 Petta, Semiconductor spin qubits, Rev. Mod. Phys.95, 025003 (2023)

  10. [10]

    X. Xue, M. Russ, N. Samkharadze, B. Undseth, A. Sam- mak, G. Scappucci, and L. M. K. Vandersypen, Quantum logic with spin qubits crossing the surface code threshold, Nature601, 343 (2022)

  11. [11]

    M. T. Madzik, S. Asaad, A. Youssry, B. Joecker, K. M. Rudinger, E. Nielsen, K. C. Young, T. J. Proctor, A. D. Baczewski, A. Laucht, V. Schmitt, F. E. Hudson, K. M. Itoh, A. M. Jakob, B. C. Johnson, D. N. Jamieson, A. S. Dzurak, C. Ferrie, R. Blume-Kohout, and A. Morello, Precision tomography of a three-qubit donor quantum processor in silicon, Nature601, ...

  12. [12]

    A. R. Mills, C. R. Guinn, M. J. Gullans, A. J. Sigillito, M. M. Feldman, E. Nielsen, and J. R. Petta, Two-qubit silicon quantum processor with operation fidelity exceed- ing 99%, Science Advances8, eabn5130 (2022)

  13. [13]

    Scappucci, and S

    A.Noiri, K.Takeda, T.Nakajima, T.Kobayashi, A.Sam- mak, G. Scappucci, and S. Tarucha, Fast universal quan- tum gate above the fault-tolerance threshold in silicon, Nature601, 338 (2022)

  14. [14]

    URLhttps:// arxiv.org/abs/2507.11918

    Y.-H.Wu, L.C.Camenzind, P.Bütler, I.K.Jin, A.Noiri, K. Takeda, T. Nakajima, T. Kobayashi, G. Scappucci, H.-S. Goan, and S. Tarucha, Simultaneous high-fidelity single-qubit gates in a spin qubit array, arXiv:2507.11918 (2025)

  15. [15]

    E. I. Rashba and A. L. Efros, Orbital mechanisms of electron-spin manipulation by an electric field, Phys. Rev. Lett.91, 126405 (2003)

  16. [16]

    L. A. Terrazos, E. Marcellina, Z. Wang, S. N. Copper- smith, M. Friesen, A. R. Hamilton, X. Hu, B. Koiller, A. L. Saraiva, D. Culcer, and R. B. Capaz, Theory of hole-spin qubits in strained germanium quantum dots, Phys. Rev. B103, 125201 (2021)

  17. [17]

    V.N.Golovach, M.Borhani,andD.Loss,Electric-dipole- induced spin resonance in quantum dots, Phys. Rev. B 74, 165319 (2006)

  18. [18]

    E. I. Rashba, Theory of electric dipole spin resonance in quantum dots: Mean field theory with gaussian fluctua- tions and beyond, Phys. Rev. B78, 195302 (2008)

  19. [19]

    M. O. Nestoklon, E. L. Ivchenko, J.-M. Jancu, and P. Voisin, Electric field effect on electron spin splitting in SiGe/Siquantum wells, Phys. Rev. B77, 155328 (2008)

  20. [20]

    Tokura, W

    Y. Tokura, W. G. van der Wiel, T. Obata, and S. Tarucha, Coherent single electron spin control in a slanting Zeeman field, Phys. Rev. Lett.96, 047202 (2006)

  21. [21]

    Corna, L

    A. Corna, L. Bourdet, R. Maurand, A. Crippa, D. Kotekar-Patil, H. Bohuslavskyi, R. Lavieville, L. Hutin, S. Barraud, X. Jehl, M. Vinet, S. D. Franceschi, Y.-M. Niquet, and M. Sanquer, Electrically driven elec- tron spin resonance mediated by spin–valley–orbit cou- pling in a silicon quantum dot, npj Quantum Information 4, 6 (2018)

  22. [22]

    Huang and X

    P. Huang and X. Hu, Fast spin-valley-based quantum gates in Si with micromagnets, npj Quantum Informa- tion7, 162 (2021)

  23. [23]

    X. Cai, E. J. Connors, L. F. Edge, and J. M. Nichol, Co- herent spin–valley oscillations in silicon, Nature Physics 19, 386 (2023)

  24. [24]

    McJunkin, B

    T. McJunkin, B. Harpt, Y. Feng, M. P. Losert, R. Rah- man, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. Friesen, R. Joynt, and M. A. Eriksson, SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits, Nature Commu- nications13, 7777 (2022)

  25. [25]

    Feng and R

    Y. Feng and R. Joynt, Enhanced valley splitting in Si layers with oscillatory Ge concentration, Phys. Rev. B 106, 085304 (2022)

  26. [26]

    B. D. Woods, M. A. Eriksson, R. Joynt, and M. Friesen, Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration, Phys. Rev. B107, 035418 (2023)

  27. [27]

    Gradwohl, L

    K.-P. Gradwohl, L. Cvitkovich, C.-H. Lu, S. Koelling, M. Oezkent, Y. Liu, D. Waldhör, T. Grasser, Y.-M. Niquet, M. Albrecht, C. Richter, O. Moutanabbir, and J. Martin, Enhanced nanoscale Ge concentration oscilla- tions in Si/SiGe quantum well through controlled segre- gation, Nano Letters25, 4204 (2025)

  28. [28]

    B. P. Wuetz, M. P. Losert, S. Koelling, L. E. A. Ste- houwer, A.-M. J. Zwerver, S. G. J. Philips, M. T. Mądzik, X. Xue, G. Zheng, M. Lodari, S. V. Amitonov, N. Samkharadze, A. Sammak, L. M. K. Vandersypen, R. Rahman, S. N. Coppersmith, O. Moutanabbir, M. Friesen, and G. Scappucci, Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots, ...

  29. [29]

    M. P. Losert, M. A. Eriksson, R. Joynt, R. Rahman, G. Scappucci, S. N. Coppersmith, and M. Friesen, Practi- cal strategies for enhancing the valley splitting in Si/SiGe quantum wells, Phys. Rev. B108, 125405 (2023)

  30. [30]

    J. R. F. Lima and G. Burkard, Valley splitting depending on the size and location of a silicon quantum dot, Phys. Rev. Mater.8, 036202 (2024)

  31. [31]

    J. R. F. Lima and G. Burkard, Interface and electromag- netic effects in the valley splitting of Si quantum dots, Materials for Quantum Technology3, 025004 (2023)

  32. [32]

    L. F. Peña, J. C. Koepke, J. H. Dycus, A. Mounce, A. D. Baczewski, N. T. Jacobson, and E. Bussmann, Model- ing Si/SiGe quantum dot variability induced by interface disorderreconstructedfrommultiperspectivemicroscopy, npj Quantum Inf10, 33 (2024)

  33. [33]

    J. C. Marcks, E. Eagen, E. C. Brann, M. P. Losert, T. Oh, J. Reily, C. S. Wang, D. Keith, F. A. Mo- hiyaddin, F. Luthi, M. J. Curry, J. Zhang, F. J. Here- mans, M. Friesen, and M. A. Eriksson, Valley splitting correlations across a silicon quantum well, Nature Com- mun.16, 11381 (2025)

  34. [34]

    J. K. Gamble, M. A. Eriksson, S. N. Coppersmith, and M. Friesen, Disorder-induced valley-orbit hybrid states in Si quantum dots, Phys. Rev. B88, 035310 (2013)

  35. [35]

    B. D. Woods, M. P. Losert, R. Joynt, and M. Friesen, g-factor theory of Si/SiGe quantum dots: Spin-valley and giant renormalization effects, Phys. Rev. Lett.136, 206201 (2026)

  36. [36]

    B. D. Woods, M. P. Losert, N. R. Elston, M. A. Eriksson, S. N. Coppersmith, R. Joynt, and M. Friesen, Statisti- cal characterization of valley coupling in Si/SiGe quan- tum dots viag-factor measurements near a valley vortex, arXiv:2507.05160 (2025)

  37. [37]

    F. A. Zwanenburg, A. S. Dzurak, A. Morello, M. Y. Sim- mons, L. C. L. Hollenberg, G. Klimeck, S. Rogge, S. N. Coppersmith, and M. A. Eriksson, Silicon quantum elec- tronics, Rev. Mod. Phys.85, 961 (2013)

  38. [38]

    Schäffler, High-mobility Si and Ge structures, Semi- conductor Science and Technology12, 1515 (1997)

    F. Schäffler, High-mobility Si and Ge structures, Semi- conductor Science and Technology12, 1515 (1997)

  39. [39]

    B. D. Woods, H. Soomro, E. S. Joseph, C. C. D. Frink, R. Joynt, M. A. Eriksson, and M. Friesen, Cou- 18 pling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations, npj Quantum Information10, 54 (2024)

  40. [40]

    Thayil, L

    A. Thayil, L. Ermoneit, and M. Kantner, Theory of val- ley splitting in Si/SiGe spin-qubits: Interplay of strain, resonances and random alloy disorder, WIAS Preprints 3158 (2024)

  41. [41]

    Friesen, S

    M. Friesen, S. Chutia, C. Tahan, and S. N. Coppersmith, Valley splitting theory of SiGe/Si/SiGe quantum wells, Phys. Rev. B75, 115318 (2007)

  42. [42]

    Winkler,Spin-orbit Coupling Effects in Two- Dimensional Electron and Hole Systems(Springer, Berlin, Heidelberg, 2003)

    R. Winkler,Spin-orbit Coupling Effects in Two- Dimensional Electron and Hole Systems(Springer, Berlin, Heidelberg, 2003)

  43. [43]

    Casella and R

    G. Casella and R. L. Berger,Statistical Inference, 2nd ed. (Duxbury Press, Pacific Grove, CA, 2002)

  44. [44]

    E. J. Connors, J. Nelson, H. Qiao, L. F. Edge, and J. M. Nichol, Low-frequency charge noise in Si/SiGe quantum dots, Phys. Rev. B100, 165305 (2019)

  45. [45]

    C. A. Wang, H. E. Ercan, M. F. Gyure, G. Scappucci, M. Veldhorst, and M. Rimbach-Russ, Modeling of planar germanium hole qubits in electric and magnetic fields, npj Quantum Information10, 102 (2024)

  46. [46]

    T. F. Watson, S. G. J. Philips, E. Kawakami, D. R. Ward, P. Scarlino, M. Veldhorst, D. E. Savage, M. G. Lagally, M. Friesen, S. N. Coppersmith, M. A. Eriksson, and L. M. K. Vandersypen, A programmable two-qubit quantum processor in silicon, Nature555, 633 (2018)

  47. [47]

    Kranz, S

    L. Kranz, S. K. Gorman, B. Thorgrimsson, Y. He, D. Keith, J. G. Keizer, and M. Y. Simmons, Exploiting a single-crystal environment to minimize the charge noise on qubits in silicon, Advanced Materials32, 2003361 (2020)

  48. [48]

    Ithier, E

    G. Ithier, E. Collin, P. Joyez, P. J. Meeson, D. Vion, D. Esteve, F. Chiarello, A. Shnirman, Y. Makhlin, J. Schriefl, and G. Schön, Decoherence in a supercon- ducting quantum bit circuit, Phys. Rev. B72, 134519 (2005)

  49. [49]

    K¸ epa, N

    M. K¸ epa, N. Focke, L. Cywiński, and J. A. Krzywda, Simulation of1/fcharge noise affecting a quantum dot in a Si/SiGe structure, Appl. Phys. Lett.123, 034005 (2023)

  50. [50]

    Volmer, T

    M. Volmer, T. Struck, A. Sala, B. Chen, M. Ober- länder, T. Offermann, R. Xue, L. Visser, J.-S. Tu, S. Trellenkamp, L. Cywiński, H. Bluhm, and L. R. Schreiber, Mapping of valley splitting by conveyor-mode spin-coherent electron shuttling, npj Quantum Informa- tion10, 61 (2024)

  51. [51]

    Volmer, T

    M. Volmer, T. Struck, A. Sala, J.-S. Tu, S. Trellenkamp, D.D.Esposti, G.Scappucci, ŁukaszCywiński, H.Bluhm, and L. R. Schreiber, Mapping g-factors and complex in- tervalley coupling in Si/SiGe by conveyor-mode shuttling (2026), arXiv:2603.01844

  52. [52]

    High-fidelity EDSR in Si/SiGe Wiggle Wells

    H. Soomro, M. Kim, M. A. Eriksson, B. D. Woods, and M. Friesen, Figures, codes, and data used in the prepa- ration of the paper, “High-fidelity EDSR in a Si/SiGe Wiggle Well”, arxiv:2605.24790 (2026)

  53. [53]

    Eckardt and E

    A. Eckardt and E. Anisimovas, High-frequency approx- imation for periodically driven quantum systems from a floquet-space perspective, New Journal of Physics17, 093039 (2015)

  54. [54]

    Paladino, Y

    E. Paladino, Y. M. Galperin, G. Falci, and B. L. Alt- shuler,1/fnoise: Implications for solid-state quantum information, Rev. Mod. Phys.86, 361 (2014)

  55. [55]

    Takashima and R

    T. Takashima and R. Ishibashi, Electric fields in dielec- tric multi-layers calculated by digital computer, IEEE Transactions on Electrical InsulationEI-13, 37 (1978)

  56. [56]

    H. E. Ercan, M. Friesen, and S. N. Coppersmith, Charge- noise resilience of two-electron quantum dots inSi/SiGe heterostructures, Phys. Rev. Lett.128, 247701 (2022)