A valley-aware co-simulation and noise-aware optimization of discrete cryogenic circuit settings achieves 99.99% average shuttling fidelity over 10 μm at 20 m/s with tens of μW power.
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6 Pith papers cite this work. Polarity classification is still indexing.
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Pith papers citing it
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2026 6representative citing papers
Mobile spin qubits in silicon can leapfrog over occupied dots by exploiting low valley splitting, enabling new connectivity routes and SWAP^γ entangling gates.
Alloy disorder in wiggle wells both randomizes and enables EDSR, with sweet spots permitting high-fidelity Rabi oscillations despite charge noise.
A Tukey-window-based smooth velocity shuttling protocol reduces valley excitations and average spin infidelity in disordered Si/SiGe quantum dots via analytical design and statistical simulations.
Experimental demonstration of Ge concentration modulations in Si quantum wells with periods from 2.00 nm to 0.49 nm (including at k0 and 2k0/3), characterized by X-ray and STEM showing high homogeneity and gradients up to 20 at-%/nm, with k·p simulations suggesting valley splitting enhancement in 2k
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.
citing papers explorer
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Valley-Aware Optimal Control of Spin Shuttling Using Cryogenic Integrated Electronics
A valley-aware co-simulation and noise-aware optimization of discrete cryogenic circuit settings achieves 99.99% average shuttling fidelity over 10 μm at 20 m/s with tens of μW power.
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Spin Qubit Leapfrogging: Dynamics of shuttling electrons on top of another
Mobile spin qubits in silicon can leapfrog over occupied dots by exploiting low valley splitting, enabling new connectivity routes and SWAP^γ entangling gates.
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High-fidelity EDSR in Si/SiGe Wiggle Wells
Alloy disorder in wiggle wells both randomizes and enables EDSR, with sweet spots permitting high-fidelity Rabi oscillations despite charge noise.
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Smooth velocity shuttling for suppressing valley excitations in disordered Si/SiGe quantum dots
A Tukey-window-based smooth velocity shuttling protocol reduces valley excitations and average spin infidelity in disordered Si/SiGe quantum dots via analytical design and statistical simulations.
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Sharp periodic Ge concentration modulations beyond the conduction band valley wavevector $k_0$ in nuclear spin-free Si quantum wells
Experimental demonstration of Ge concentration modulations in Si quantum wells with periods from 2.00 nm to 0.49 nm (including at k0 and 2k0/3), characterized by X-ray and STEM showing high homogeneity and gradients up to 20 at-%/nm, with k·p simulations suggesting valley splitting enhancement in 2k
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Singlet-triplet oscillations in multivalley Si double quantum dots
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.