pith. sign in

arxiv: 2605.21210 · v1 · pith:IHJ2HXKHnew · submitted 2026-05-20 · ❄️ cond-mat.mtrl-sci · cond-mat.mes-hall

Shear-Mode Raman Imaging of Ferroelectric Switching in Multilayer 3R-MoS₂

Yulu Liu , Kenji Watanabe , Takashi Taniguchi , Xiaoxiang Xi This is my paper

Pith reviewed 2026-05-21 03:42 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci cond-mat.mes-hall
keywords ferroelectric switchingRaman imaging3R-MoS2domain wallssliding ferroelectricmultilayerpinning sitesshear mode
0
0 comments X

The pith

Shear-mode Raman imaging reveals domain walls can form between selected layers in multilayer 3R-MoS2, producing partial stacking changes during ferroelectric switching.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper demonstrates that shear-mode Raman imaging can follow the progress of ferroelectric switching inside multilayer 3R-MoS2 flakes. Mechanically segmented regions inside a single flake switch along separate paths rather than together. Partially polarized final states show that domain walls sometimes sit between only certain layer pairs, so the stacking order transforms only partway. Large differences in how long these intermediate states last point to pinning sites as the main factor controlling the speed and route of the process. Second-harmonic generation measurements add that sample edges and domain walls prefer three specific orientations, one of them chiral.

Core claim

Shear-mode Raman imaging tracks ferroelectric switching in multilayer 3R-MoS2 by mapping changes in interlayer shear vibrations. Partially polarized end states indicate that domain walls can reside between selected layer pairs, producing partial stacking transformations. The dwell time of intermediate states varies widely, showing that pinning sites strongly influence the dynamics. Second-harmonic generation measurements further reveal three characteristic sample-boundary and domain-wall orientations, including a prevalent chiral direction near the zigzag-armchair bisector.

What carries the argument

Shear-mode Raman imaging, which detects local changes in interlayer shear vibrations to map stacking configurations and domain-wall positions during switching.

If this is right

  • Mechanically segmented regions within one flake respond independently to the applied field.
  • Pinning sites determine the lifetimes of partially switched intermediate states.
  • Domain walls located between arbitrary layer pairs allow partial rather than complete reversal of stacking order.
  • Sample boundaries and domain walls align along three preferred directions identified by second-harmonic generation.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The same Raman approach could map switching dynamics in other van der Waals sliding ferroelectrics.
  • Reducing pinning through improved exfoliation or thermal treatment might produce faster and more reproducible device operation.
  • Stabilizing the partial-polarization states could enable multi-level memory elements based on layer-selective switching.

Load-bearing premise

Changes in shear-mode Raman intensity correspond directly and uniquely to specific interlayer stacking configurations and domain-wall locations.

What would settle it

High-resolution cross-sectional imaging that finds no domain walls at the layer-pair positions predicted by the partial-polarization Raman maps would falsify the interpretation.

Figures

Figures reproduced from arXiv: 2605.21210 by Kenji Watanabe, Takashi Taniguchi, Xiaoxiang Xi, Yulu Liu.

Figure 1
Figure 1. Figure 1: FIG. 1. (a) Optical micrograph of a MoS [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2. (a) Schematic of the dual-gate device. Positive electric field points in the upward direction. (b) Electric-field dependence [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3. (a) Optical micrograph of the multilayer flake used in Device D34. (b) Raman map revealing thickness and initial [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4. (a) Illustration of special directions in the MoS [PITH_FULL_IMAGE:figures/full_fig_p005_4.png] view at source ↗
read the original abstract

We use shear-mode Raman imaging to track ferroelectric switching in multilayer 3$R$-MoS$_2$. Within a single flake, mechanically segmented regions respond independently and follow distinct pathways. Partially polarized end states indicate that domain walls can reside between selected layer pairs, producing partial stacking transformations. The dwell time of intermediate states varies widely, indicating that pinning sites strongly influence the dynamics. Second-harmonic generation measurements further reveal three characteristic sample-boundary and domain-wall orientations, including a prevalent chiral direction near the zigzag-armchair bisector. These results provide a direct, noninvasive view of domain-wall-mediated switching in a prototypical sliding ferroelectric and identify pinning and exfoliation-created boundaries as key factors governing its dynamics.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 1 minor

Summary. The manuscript demonstrates the application of shear-mode Raman imaging to track ferroelectric switching in multilayer 3R-MoS2. Within individual flakes, mechanically segmented regions are shown to respond independently and follow distinct switching pathways. Partially polarized Raman end states are interpreted as evidence that domain walls can reside between selected layer pairs, resulting in partial stacking transformations. Wide variation in the dwell times of intermediate states is taken to indicate that pinning sites strongly influence the switching dynamics. Second-harmonic generation measurements additionally identify three characteristic orientations of sample boundaries and domain walls, including a prevalent chiral direction near the zigzag-armchair bisector.

Significance. If the assignment of shear-mode Raman intensity variations to specific interlayer stacking configurations and domain-wall positions is robust against alternative contributions, the work supplies a direct, noninvasive experimental window into domain-wall-mediated sliding ferroelectricity. The identification of pinning sites and exfoliation-created boundaries as controlling factors has clear implications for the reproducibility and design of 2D ferroelectric devices. The observation of partial polarization states and independent regional responses adds concrete detail to the microscopic picture of multilayer ferroelectric switching.

major comments (2)
  1. [Abstract and Raman imaging results] The central interpretation that partially polarized end states demonstrate domain walls residing between selected layer pairs (producing partial stacking transformations) and that pinning controls the dynamics rests on the assumption that shear-mode Raman intensity changes map uniquely to interlayer registry. In a mechanically segmented flake, however, local strain gradients or defects at segment boundaries can modulate shear modes independently of stacking. The manuscript provides no quantitative assessment or subtraction of such contributions, which directly undermines the load-bearing inference about domain-wall positions and pinning (see Abstract and the section describing the Raman imaging results).
  2. [Abstract and Methods] The abstract states clear observations of partial states and variable dwell times but supplies no quantitative data, error bars, or explicit description of how Raman peak intensities were assigned to specific stacking configurations. Without these details it is not possible to judge whether the reported partial polarization levels exceed the uncertainty arising from peak fitting or background subtraction.
minor comments (1)
  1. [SHG measurements] The description of the three characteristic SHG orientations would benefit from explicit angular values or a supplementary figure showing the distribution of measured angles relative to the zigzag and armchair directions.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their thorough review and insightful comments on our manuscript. We have carefully considered the major concerns raised regarding the uniqueness of the Raman intensity mapping to stacking configurations and the lack of quantitative details in the abstract and methods. Below, we provide point-by-point responses and indicate the revisions made to the manuscript.

read point-by-point responses

  1. Referee: [Abstract and Raman imaging results] The central interpretation that partially polarized end states demonstrate domain walls residing between selected layer pairs (producing partial stacking transformations) and that pinning controls the dynamics rests on the assumption that shear-mode Raman intensity changes map uniquely to interlayer registry. In a mechanically segmented flake, however, local strain gradients or defects at segment boundaries can modulate shear modes independently of stacking. The manuscript provides no quantitative assessment or subtraction of such contributions, which directly undermines the load-bearing inference about domain-wall positions and pinning (see Abstract and the section describing the Raman imaging results).

    Authors: We appreciate this important caveat. While we agree that strain and defects could contribute to Raman mode variations, our data show that the shear-mode intensity changes are spatially correlated with the ferroelectric domain structures identified by SHG, and occur in a manner consistent with layer-by-layer sliding rather than random strain effects. The independent switching in mechanically segmented regions further supports that the boundaries are not dominating via strain but rather allowing independent domain evolution. Nevertheless, to address this concern directly, we have added a quantitative analysis in the revised manuscript, including estimates of strain-induced shifts based on literature values and comparison with non-switching control regions. We have also included a discussion of why strain gradients are unlikely to explain the observed partial states and variable dwell times. This revision strengthens the interpretation without altering the core conclusions. revision: partial

  2. Referee: [Abstract and Methods] The abstract states clear observations of partial states and variable dwell times but supplies no quantitative data, error bars, or explicit description of how Raman peak intensities were assigned to specific stacking configurations. Without these details it is not possible to judge whether the reported partial polarization levels exceed the uncertainty arising from peak fitting or background subtraction.

    Authors: We agree that providing quantitative details is crucial for assessing the reliability of our claims. In the revised version, we have expanded the Methods section to include a detailed description of the Raman peak fitting procedure, including the software used, background subtraction method, and the reference spectra for assigning intensities to 3R stacking configurations. We have also added error bars to the relevant figures and quantified the partial polarization levels with uncertainties, demonstrating that they are statistically significant above the fitting errors. Additionally, we have included representative raw spectra and fitting examples in the supplementary information to allow readers to evaluate the assignments. revision: yes

Circularity Check

0 steps flagged

No circularity: experimental observations grounded in direct measurements

full rationale

The paper is an experimental study using shear-mode Raman imaging and second-harmonic generation to observe ferroelectric switching in multilayer 3R-MoS2. It reports measured spectra, images, dwell times, and orientations without any mathematical derivations, fitted parameters, predictions, or first-principles calculations that could reduce to inputs by construction. Claims about domain walls, partial stacking transformations, and pinning sites are interpretations of observed intensity variations and SHG patterns. These are externally falsifiable via replication or alternative probes and do not rely on self-definitional loops, self-citation chains, or renaming of known results. The derivation chain is self-contained against external benchmarks with no load-bearing self-referential steps.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

Experimental imaging study; no free parameters, mathematical axioms, or new postulated entities are introduced. All claims rest on standard interpretations of Raman and SHG signals in 2D materials.

pith-pipeline@v0.9.0 · 5661 in / 1213 out tokens · 29741 ms · 2026-05-21T03:42:44.688010+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

53 extracted references · 53 canonical work pages

  1. [1]

    M. H. Wu and J. Li, Sliding ferroelectricity in 2D van der Waals materials: Related physics and future oppor- tunities, Proc. Natl. Acad. Sci. U.S.A.118, e2115703118 (2022)

    work page 2022

  2. [2]

    Li and M

    L. Li and M. Wu, Binary compound bilayer and multi- layer with vertical polarizations: Two-dimensional ferro- electrics, multiferroics, and nanogenerators, ACS Nano 11, 6382 (2017)

    work page 2017

  3. [3]

    Z. Fei, W. Zhao, T. A. Palomaki, B. Sun, M. K. Miller, Z. Zhao, J. Yan, X. Xu, and D. H. Cobden, Ferroelectric switching of a two-dimensional metal, Nature560, 336 (2018)

    work page 2018

  4. [4]

    J. Xiao, Y. Wang, H. Wang, C. D. Pemmaraju, S. Wang, P. Muscher, E. J. Sie, C. M. Nyby, T. P. Devereaux, X. Qian, X. Zhang, and A. M. Lindenberg, Berry curva- ture memory through electrically driven stacking transi- tions, Nat. Phys.16, 1028 (2020)

    work page 2020

  5. [5]

    Jindal, A

    A. Jindal, A. Saha, Z. Z. Li, T. Taniguchi, K. Watanabe, J. C. Hone, T. Birol, R. M. Fernandes, C. R. Dean, A. N. Pasupathy, and D. A. Rhodes, Coupled ferroelectricity and superconductivity in bilayer Td-MoTe2, Nature613, 48 (2023)

    work page 2023

  6. [6]

    P. Meng, Y. Wu, R. Bian, E. Pan, B. Dong, X. Zhao, J. Chen, L. Wu, Y. Sun, Q. Fu, Q. Liu, D. Shi, Q. Zhang, Y.-W. Zhang, Z. Liu, and F. Liu, Sliding induced multiple polarization states in two-dimensional ferroelectrics, Nat. Commun.13, 7696 (2022)

    work page 2022

  7. [7]

    D. Yang, J. Wu, B. T. Zhou, J. Liang, T. Ideue, T. Siu, K. M. Awan, K. Watanabe, T. Taniguchi, Y. Iwasa, M. Franz, and Z. Ye, Spontaneous-polarization-induced photovoltaic effect in rhombohedrally stacked MoS2, Nat. Photon.16, 469 (2022)

    work page 2022

  8. [8]

    Liang, D

    J. Liang, D. Yang, J. Wu, J. Dadap, K. Watanabe, T. Taniguchi, and Z. Ye, Optically probing the asym- metric interlayer coupling in rhombohedral-stacked MoS2 bilayer, Phys. Rev. X12, 041005 (2022)

    work page 2022

  9. [9]

    D. Yang, J. Liang, J. Wu, Y. Xiao, J. I. Dadap, K. Watanabe, T. Taniguchi, and Z. Ye, Non-volatile elec- trical polarization switching via domain wall release in 3R-MoS2 bilayer, Nat. Commun.15, 1389 (2024)

    work page 2024

  10. [10]

    Liang, D

    J. Liang, D. Yang, J. Wu, Y. Xiao, K. Watanabe, T. Taniguchi, J. I. Dadap, and Z. Ye, Resolving polar- ization switching pathways of sliding ferroelectricity in trilayer 3R-MoS2, Nat. Nanotechnol.20, 500 (2025)

    work page 2025

  11. [11]

    Liang, Y

    J. Liang, Y. Xie, D. Yang, S. Guo, K. Watanabe, T. Taniguchi, J. I. Dadap, D. Jones, and Z. Ye, Nanosec- ond ferroelectric switching of intralayer excitons in bi- layer 3R-MoS2 through coulomb engineering, Phys. Rev. X15, 021081 (2025)

    work page 2025

  12. [12]

    Ouyang, S

    T. Ouyang, S. Cha, Y. Sun, T. Taniguchi, K. Watanabe, N. M. Gabor, and C. H. Lui, Electrically switching fer- roelectric order in 3R-MoS 2 layers, Nano Lett.25, 1459 (2025)

    work page 2025

  13. [13]

    Y. Wan, T. Hu, X. Mao, J. Fu, K. Yuan, Y. Song, X. Gan, X. Xu, M. Xue, X. Cheng, C. Huang, J. Yang, L. Dai, H. Zeng, and E. Kan, Room-temperature ferroelectricity in 1T ′-ReS2 multilayers, Phys. Rev. Lett.128, 067601 (2022)

    work page 2022

  14. [14]

    L. Wang, J. Qi, W. Wei, M. Wu, Z. Zhang, X. Li, H. Sun, Q. Guo, M. Cao, Q. Wang, C. Zhao, Y. Sheng, Z. Liu, C. Liu, M. Wu, Z. Xu, W. Wang, H. Hong, P. Gao, M. Wu, Z.-J. Wang, X. Xu, E. Wang, F. Ding, X. Zheng, K. Liu, and X. Bai, Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal, Nature629, 74 (2024)

    work page 2024

  15. [15]

    M. V. Stern, Y. Waschitz, W. Cao, I. Nevo, K. Watanabe, T. Taniguchi, E. Sela, M. Urbakh, O. Hod, and M. B. Shalom, Interfacial ferroelectricity by van der Waals slid- ing, Science372, 1462 (2021)

    work page 2021

  16. [16]

    Yasuda, X

    K. Yasuda, X. Wang, K. Watanabe, T. Taniguchi, and P. Jarillo-Herrero, Stacking-engineered ferroelectricity in bilayer boron nitride, Science372, 1458 (2021)

    work page 2021

  17. [17]

    Yasuda, E

    K. Yasuda, E. Zalys-Geller, X. Wang, D. Bennett, S. S. Cheema, K. Watanabe, T. Taniguchi, E. Kaxi- ras, P. Jarillo-Herrero, and R. Ashoori, Ultrafast high- endurance memory based on sliding ferroelectrics, Sci- ence385, 53 (2024)

    work page 2024

  18. [18]

    L. J. McGilly, A. Kerelsky, N. R. Finney, K. Shapovalov, E.-M. Shih, A. Ghiotto, Y. Zeng, S. L. Moore, W. Wu, Y. Bai, K. Watanabe, T. Taniguchi, M. Stengel, L. Zhou, J. Hone, X. Zhu, D. N. Basov, C. Dean, C. E. Dreyer, and A. N. Pasupathy, Visualization of moir´ e superlat- tices, Nat. Nanotechnol.15, 580 (2020)

    work page 2020

  19. [19]

    X. Wang, K. Yasuda, Y. Zhang, S. Liu, K. Watanabe, T. Taniguchi, J. Hone, L. Fu, and P. Jarillo-Herrero, In- terfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides, Nat. Nanotechnol.17, 367 (2022)

    work page 2022

  20. [20]

    Weston, E

    A. Weston, E. G. Castanon, V. Enaldiev, F. Ferreira, S. Bhattacharjee, S. Xu, H. Corte-Le´ on, Z. Wu, N. Clark, A. Summerfield, T. Hashimoto, Y. Gao, W. Wang, M. Hamer, H. Read, L. Fumagalli, A. V. Kretinin, S. J. Haigh, O. Kazakova, A. K. Geim, V. I. Fal’ko, and R. Gorbachev, Interfacial ferroelectricity in marginally twisted 2D semiconductors, Nat. Nano...

    work page 2022

  21. [21]

    S. Deb, W. Cao, N. Raab, K. Watanabe, T. Taniguchi, M. Goldstein, L. Kronik, M. Urbakh, O. Hod, and M. Ben Shalom, Cumulative polarization in conductive interfacial ferroelectrics, Nature612, 465 (2022)

    work page 2022

  22. [22]

    K. Ko, A. Yuk, R. Engelke, S. Carr, J. Kim, D. Park, H. Heo, H.-M. Kim, S.-G. Kim, H. Kim, T. Taniguchi, K. Watanabe, H. Park, E. Kaxiras, S. M. Yang, P. Kim, and H. Yoo, Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals ho- mobilayers, Nat. Mater.22, 992 (2023)

    work page 2023

  23. [23]

    Van Winkle, N

    M. Van Winkle, N. Dowlatshahi, N. Khaloo, M. Iyer, I. M. Craig, R. Dhall, T. Taniguchi, K. Watanabe, and D. K. Bediako, Engineering interfacial polarization switching in van der Waals multilayers, Nat. Nanotech- nol.19, 751 (2024)

    work page 2024

  24. [24]

    Zheng, Q

    Z. Zheng, Q. Ma, Z. Bi, S. De La Barrera, M.-H. Liu, 7 N. Mao, Y. Zhang, N. Kiper, K. Watanabe, T. Taniguchi, J. Kong, W. A. Tisdale, R. Ashoori, N. Gedik, L. Fu, S.- Y. Xu, and P. Jarillo-Herrero, Unconventional ferroelec- tricity in moir´ e heterostructures, Nature588, 71 (2020)

    work page 2020

  25. [25]

    X. Li, B. Qin, Y. Wang, Y. Xi, Z. Huang, M. Zhao, Y. Peng, Z. Chen, Z. Pan, J. Zhu, C. Cui, R. Yang, W. Yang, S. Meng, D. Shi, X. Bai, C. Liu, N. Li, J. Tang, K. Liu, L. Du, and G. Zhang, Sliding ferroelectric memo- ries and synapses based on rhombohedral-stacked bilayer MoS2, Nat. Commun.15, 10921 (2024)

    work page 2024

  26. [26]

    R. Bian, R. He, E. Pan, Z. Li, G. Cao, P. Meng, J. Chen, Q. Liu, Z. Zhong, W. Li, and F. Liu, Developing fatigue- resistant ferroelectrics using interlayer sliding switching, Science385, 57 (2024)

    work page 2024

  27. [27]

    R. Niu, Z. Li, X. Han, Z. Qu, D. Ding, Z. Wang, Q. Liu, T. Liu, C. Han, K. Watanabe, T. Taniguchi, M. Wu, Q. Ren, X. Wang, J. Hong, J. Mao, Z. Han, K. Liu, Z. Gan, and J. Lu, Giant ferroelectric polarization in a bilayer graphene heterostructure, Nat. Commun.13, 6241 (2022)

    work page 2022

  28. [28]

    D. R. Klein, L.-Q. Xia, D. MacNeill, K. Watanabe, T. Taniguchi, and P. Jarillo-Herrero, Electrical switching of a bistable moir´ e superconductor, Nat. Nanotechnol. 18, 331 (2023)

    work page 2023

  29. [29]

    M. Chen, Y. Xie, B. Cheng, Z. Yang, X.-Z. Li, F. Chen, Q. Li, J. Xie, K. Watanabe, T. Taniguchi, W.-Y. He, M. Wu, S.-J. Liang, and F. Miao, Selective and quasi- continuous switching of ferroelectric Chern insulator de- vices for neuromorphic computing, Nat. Nanotechnol.19, 962 (2024)

    work page 2024

  30. [30]

    R. He, B. Zhang, H. Wang, L. Li, P. Tang, G. Bauer, and Z. Zhong, Ultrafast switching dynamics of the ferro- electric order in stacking-engineered ferroelectrics, Acta Mater.262, 119416 (2024)

    work page 2024

  31. [31]

    Wang and S

    Z. Wang and S. Dong, Polarization switching in slid- ing ferroelectrics: Roles of fluctuation and domain wall, Phys. Rev. B111, L201406 (2025)

    work page 2025

  32. [32]

    C. Ke, F. Liu, and S. Liu, Superlubric motion of wavelike domain walls in sliding ferroelectrics, Phys. Rev. Lett. 135, 046201 (2025)

    work page 2025

  33. [33]

    Y. Shi, Y. Gao, H. Wang, B. Zhang, Z. Zhong, and R. He, Soliton-like domain wall motion in sliding ferroelectrics with ultralow damping, Phys. Rev. B112, 035421 (2025)

    work page 2025

  34. [34]

    Y. Bai, Z. Yu, Z. Guan, J. Tian, C. Wang, X. Yao, Y. Yang, Y. Lei, J. Xu, C. Liu, J. Zhu, Y. Tu, S. Shen, H. Xiang, X. Li, C. Xu, and J. Wang, Sub-nanosecond polarization switching with anomalous kinetics in vdW ferroelectric WTe2, Nat. Commun.16, 7221 (2025)

    work page 2025

  35. [35]

    L. Liu, T. Li, X. Gong, H. Wen, L. Zhou, M. Feng, H. Zhang, N. Zou, S. Wu, Y. Li, S. Zhu, F. Zhuo, X. Zou, Z. Hu, Z. Ding, S. Fang, W. Xu, X. Hou, K. Zhang, G. Long, L. Tang, Y. Jiang, Z. Yu, L. Ma, J. Wang, and X. Wang, Homoepitaxial growth of large- area rhombohedral-stacked MoS 2, Nat. Mater.24, 1195 (2025)

    work page 2025

  36. [36]

    X. Lu, M. I. B. Utama, J. Lin, X. Luo, Y. Zhao, J. Zhang, S. T. Pantelides, W. Zhou, S. Y. Quek, and Q. Xiong, Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum dise- lenide by raman spectroscopy, Advanced Materials27, 4502 (2015)

    work page 2015

  37. [37]

    X. Luo, X. Lu, C. Cong, T. Yu, Q. Xiong, and S. Ying Quek, Stacking sequence determines Raman in- tensities of observed interlayer shear modes in 2D layered materials – A general bond polarizability model, Sci. Rep. 5, 14565 (2015)

    work page 2015

  38. [38]

    J.-U. Lee, K. Kim, S. Han, G. H. Ryu, Z. Lee, and H. Cheong, Raman signatures of polytypism in molyb- denum disulfide, ACS Nano10, 1948 (2016)

    work page 1948

  39. [39]

    Liang, A

    L. Liang, A. A. Puretzky, B. G. Sumpter, and V. Me- unier, Interlayer bond polarizability model for stacking- dependent low-frequency raman scattering in layered ma- terials, Nanoscale9, 15340 (2017)

    work page 2017

  40. [40]

    Lin and P.-H

    M.-L. Lin and P.-H. Tan, Ultralow-frequency raman spec- troscopy of two-dimensional materials, inRaman Spec- troscopy of Two-Dimensional Materials, edited by P.-H. Tan (Springer Singapore, Singapore, 2019) pp. 203–230

    work page 2019

  41. [41]

    Cong, X.-L

    X. Cong, X.-L. Liu, M.-L. Lin, and P.-H. Tan, Applica- tion of Raman spectroscopy to probe fundamental prop- erties of two-dimensional materials, npj 2D Mater. Appl. 4, 13 (2020)

    work page 2020

  42. [42]

    van Baren, G

    J. van Baren, G. Ye, J.-A. Yan, Z. Ye, P. Rezaie, P. Yu, Z. Liu, R. He, and C. H. Lui, Stacking-dependent in- terlayer phonons in 3R and 2H MoS 2, 2D Materials6, 025022 (2019)

    work page 2019

  43. [43]

    See Supplemental Material for the methods for sam- ple preparation, device fabrication, and optical spec- troscopy measurements; the bond polarizability model for stacking-dependent shear modes; additional data for Device D34 and other devices; evidence for a prevalent chiral orientation; pulsed-voltage measurements

    work page

  44. [44]

    A. Fan, Q. Zhang, Z. Yang, L. Li, M. Li, K. Zhang, J. Gao, F. Wu, M. Wu, D. Geng, and W. Hu, Tailored sliding ferroelectricity for ultrahigh fatigue resistance in stacked trilayer MoS 2 crystals, Sci. Adv.11, eadx8192 (2025)

    work page 2025

  45. [45]

    B. Butz, C. Dolle, F. Niekiel, K. Weber, D. Waldmann, H. B. Weber, B. Meyer, and E. Spiecker, Dislocations in bilayer graphene, Nature505, 533 (2014)

    work page 2014

  46. [46]

    Yankowitz, J

    M. Yankowitz, J. I. J. Wang, A. G. Birdwell, Y.-A. Chen, K. Watanabe, T. Taniguchi, P. Jacquod, P. San-Jose, P. Jarillo-Herrero, and B. J. LeRoy, Electric field control of soliton motion and stacking in trilayer graphene, Nat. Mater.13, 786 (2014)

    work page 2014

  47. [47]

    Jiang, S

    L. Jiang, S. Wang, Z. Shi, C. Jin, M. I. B. Utama, S. Zhao, Y.-R. Shen, H.-J. Gao, G. Zhang, and F. Wang, Manipulation of domain-wall solitons in bi- and trilayer graphene, Nat. Nanotechnol.13, 204 (2018)

    work page 2018

  48. [48]

    Zhang, Q

    S. Zhang, Q. Xu, Y. Hou, A. Song, Y. Ma, L. Gao, M. Zhu, T. Ma, L. Liu, X.-Q. Feng, and Q. Li, Domino-like stacking order switching in twisted mono- layer–multilayer graphene, Nat. Mater.21, 621 (2022)

    work page 2022

  49. [49]

    L. M. Malard, T. V. Alencar, A. P. M. Barboza, K. F. Mak, and A. M. de Paula, Observation of intense second harmonic generation from MoS 2 atomic crystals, Phys. Rev. B87, 201401 (2013)

    work page 2013

  50. [50]

    M. S. Dresselhaus and P. Avouris, Introduction to car- bon materials research, inCarbon Nanotubes: Synthesis, Structure, Properties, and Applications, edited by M. S. Dresselhaus, G. Dresselhaus, and P. Avouris (Springer Berlin Heidelberg, Berlin, Heidelberg, 2001) pp. 1–9

    work page 2001

  51. [51]

    Y. Guo, C. Liu, Q. Yin, C. Wei, S. Lin, T. B. Hoffman, Y. Zhao, J. H. Edgar, Q. Chen, S. P. Lau, J. Dai, H. Yao, H.-S. P. Wong, and Y. Chai, Distinctive in-plane cleav- age behaviors of two-dimensional layered materials, ACS Nano10, 8980 (2016)

    work page 2016

  52. [52]

    Y. Yeo, Y. Sharaby, N. Roy, N. Raab, K. Watanabe, T. Taniguchi, and M. Ben Shalom, Polytype switching 8 by super-lubricant van der Waals cavity arrays, Nature 638, 389 (2025)

    work page 2025

  53. [53]

    Shear-mode Raman Imaging of Ferroelectric Switching in Multilayer 3R-MoS 2

    Y. Liu, K. Watanabe, T. Taniguchi, and X. Xi, Data for “Shear-mode Raman Imaging of Ferroelectric Switching in Multilayer 3R-MoS 2” (2026)

    work page 2026