pith. sign in

arxiv: 2606.00665 · v1 · pith:YV5ORSDEnew · submitted 2026-05-30 · ❄️ cond-mat.mtrl-sci · cond-mat.mes-hall· physics.app-ph

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers

Sourav Paul , Prasenjit Ghosh , Krishna Prasad Maity , Vineet Pandey , Abhijith M.B. , Premananda Chatterjee , Kenji Watanabe , Takashi Taniguchi
show 4 more authors
Nicholas R. Glavin Ajit K. Roy Atindra Nath Pal Vidya Kochat
This is my paper

Pith reviewed 2026-06-28 18:35 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci cond-mat.mes-hallphysics.app-ph
keywords sliding ferroelectricity3R-WSe2CVD growthstructural disordermulti-domain kineticsvan der Waals bilayersferroelectric field-effect transistor
0
0 comments X

The pith

Growth-induced structural disorder significantly impacts polarization switching in CVD-grown 3R-WSe2 bilayers, while multi-domain kinetics governs the ferroelectric response.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper studies sliding ferroelectricity in 3R-stacked WSe2 bilayers produced by chemical vapor deposition. It employs a graphene ferroelectric field-effect transistor to detect charge changes caused by polarization reversal. Results show that defects created during growth hinder reliable switching of the out-of-plane polarization. The motion and interaction of multiple domains then shape how the overall ferroelectric signal develops over time. These observations matter for building non-volatile devices from van der Waals layers because they highlight practical limits on performance in scalable films.

Core claim

In CVD-grown 3R-WSe2 bilayers, interlayer sliding produces out-of-plane polarization due to broken inversion symmetry, yet the measured switching behavior is dominated by growth-induced structural defects that reduce switching efficiency and by multi-domain kinetics that control the time evolution of the ferroelectric response, as observed through graphene channel charge modulation in graphene-FE-FET devices.

What carries the argument

Graphene-FE-FET architecture in which graphene serves as a probe of polarization-induced charge modulation to expose the separate roles of structural disorder and multi-domain kinetics.

If this is right

  • Polarization switching efficiency drops in the presence of CVD growth defects.
  • Multi-domain processes set the speed and uniformity of the ferroelectric response.
  • Device optimization requires separate control over defect density and domain structure.
  • These limits apply specifically to scalable CVD films rather than ideal exfoliated layers.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Reducing growth defects through modified CVD parameters could improve switching without altering the 3R stacking.
  • Domain engineering techniques such as strain or patterning might offer routes to faster or more uniform responses.
  • The same disorder and kinetics issues are likely to appear in other CVD-grown 2D ferroelectrics, pointing to a general materials challenge.

Load-bearing premise

The device architecture cleanly separates polarization-driven charge changes from other effects such as contact resistance or defect trapping in the disordered films.

What would settle it

Fabricate identical graphene-FE-FET devices on both CVD-grown and mechanically exfoliated 3R-WSe2 bilayers and compare their polarization switching curves to check whether the CVD-specific limitations disappear in the cleaner samples.

read the original abstract

Sliding ferroelectricity in van der Waals (vdW) layered systems has emerged as a promising route toward non-volatile nanoscale devices, where interlayer displacement in non-centrosymmetric bilayers generates an out-of-plane polarization. In particular, 3R-stacked bilayer transition metal dichalcogenides (TMDs) grown via chemical vapor deposition (CVD) have been shown to host such polarization due to broken inversion symmetry. However, a detailed investigation of the 2D ferroelectric (FE) properties of CVD-grown 2D films, particularly the role of intrinsic disorder, such as structural defects and domain structure, remains poorly understood. Here, we investigate the FE switching characteristics of CVD-grown 3R-stacked WSe2 using a graphene-based ferroelectric field-effect transistor (graphene-FE-FET) architecture, where graphene serves as a highly sensitive probe of induced charge modulation due to polarization switching of FEs. We show that the growth-induced structural disorder significantly impacts polarization switching, while multi-domain kinetics governs the evolution of the FE response. These findings provide important insights into the design and optimization of FE devices based on vdW materials.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

1 major / 0 minor

Summary. The manuscript investigates sliding ferroelectricity in CVD-grown 3R-stacked WSe2 bilayers via a graphene-FE-FET architecture. It claims that growth-induced structural disorder significantly impacts polarization switching while multi-domain kinetics governs the evolution of the ferroelectric response, providing insights for vdW FE device design.

Significance. If the experimental attribution of charge modulation specifically to sliding ferroelectric polarization (modulated by disorder and domain kinetics) holds with appropriate controls, the work would offer useful guidance on disorder effects in CVD-grown 2D ferroelectrics. The graphene probe approach is potentially sensitive, but the abstract provides no quantitative data, error analysis, or validation of the device isolation.

major comments (1)
  1. The central claim that observed charge modulation arises from sliding ferroelectric polarization switching (modulated by disorder and multi-domain kinetics) depends on the graphene-FE-FET isolating polarization-induced effects. No controls (e.g., centrosymmetric 2H bilayers, temperature-dependent leakage, or trap-state modeling) are described to rule out contact resistance or defect trapping in the disordered CVD films, leaving the attribution vulnerable.

Simulated Author's Rebuttal

1 responses · 0 unresolved

We thank the referee for the careful review and constructive feedback. We address the single major comment below and will revise the manuscript to incorporate additional controls that strengthen the attribution of the observed effects.

read point-by-point responses

  1. Referee: The central claim that observed charge modulation arises from sliding ferroelectric polarization switching (modulated by disorder and multi-domain kinetics) depends on the graphene-FE-FET isolating polarization-induced effects. No controls (e.g., centrosymmetric 2H bilayers, temperature-dependent leakage, or trap-state modeling) are described to rule out contact resistance or defect trapping in the disordered CVD films, leaving the attribution vulnerable.

    Authors: We agree that explicit controls are needed to isolate polarization-induced charge modulation from possible contributions of contact resistance or defect trapping. In the revised manuscript we will add (i) comparative data from centrosymmetric 2H-stacked WSe2 bilayer devices fabricated under identical conditions, which exhibit no hysteretic charge modulation, and (ii) temperature-dependent transport measurements that show the temperature scaling of the observed hysteresis is inconsistent with thermally activated leakage or simple trap filling. These controls will be presented alongside the existing 3R data to support the ferroelectric origin of the signal. revision: yes

Circularity Check

0 steps flagged

No circularity: purely experimental report with no derivation chain

full rationale

The manuscript is an experimental study of ferroelectric switching in CVD-grown 3R-WSe2 bilayers using graphene-FE-FET devices. It reports observations on disorder effects and domain kinetics without any mathematical derivations, fitted parameters presented as predictions, self-citations used as load-bearing uniqueness theorems, or ansatzes smuggled via prior work. All claims rest on direct device measurements rather than reducing to inputs by construction, satisfying the self-contained criterion for score 0.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

Experimental materials science study with no explicit mathematical model, free parameters, or new postulated entities described in the abstract.

pith-pipeline@v0.9.1-grok · 5804 in / 904 out tokens · 21130 ms · 2026-06-28T18:35:16.676594+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

54 extracted references · 2 canonical work pages

  1. [1]

    The future of ferroelectric field-effect transistor technology , volume =

    Asif Islam Khan and Ali Keshavarzi and Suman Datta , doi =. The future of ferroelectric field-effect transistor technology , volume =. Nature Electronics , month =

  2. [2]

    Scott and Cheol Seong Hwang and Ting Ao Tang and Hui Bin Lu and Guo Zhen Yang , doi =

    An Quan Jiang and Can Wang and Kui Juan Jin and Xiao Bing Liu and James F. Scott and Cheol Seong Hwang and Ting Ao Tang and Hui Bin Lu and Guo Zhen Yang , doi =. A Resistive Memory in Semiconducting. Advanced Materials , month =

  3. [3]

    Emerging memories: resistive switching mechanisms and current status , volume =

    Doo Seok Jeong and Reji Thomas and R S Katiyar and J F Scott and H Kohlstedt and A Petraru and Cheol Seong Hwang , doi =. Emerging memories: resistive switching mechanisms and current status , volume =. Reports on Progress in Physics , month =

  4. [4]

    J. F. Scott , doi =. Applications of Modern Ferroelectrics , volume =. Science , month =

  5. [5]

    Valasek , doi =

    J. Valasek , doi =. Piezo-Electric and Allied Phenomena in Rochelle Salt , volume =. Physical Review , month =

  6. [6]

    Choi and S

    T. Choi and S. Lee and Y. J. Choi and V. Kiryukhin and S.-W. Cheong , doi =. Switchable Ferroelectric Diode and Photovoltaic Effect in. Science , month =

  7. [7]

    Chi Xiong and Wolfram H. P. Pernice and Joseph H. Ngai and James W. Reiner and Divine Kumah and Frederick J. Walker and Charles H. Ahn and Hong X. Tang , doi =. Active Silicon Integrated Nanophotonics: Ferroelectric. Nano Letters , month =

  8. [8]

    C. A. Randall and D. J. Barber and R. W. Whatmore , doi =. Ferroelectric domain configurations in a modified-. Journal of Materials Science , month =

  9. [9]

    Benedek and James M

    Nicole A. Benedek and James M. Rondinelli and Hania Djani and Philippe Ghosez and Philip Lightfoot , doi =. Understanding ferroelectricity in layered perovskites: new ideas and insights from theory and experiments , volume =. Dalton Transactions , pages =

  10. [10]

    Haertling , doi =

    Gene H. Haertling , doi =. Ferroelectric Ceramics: History and Technology , volume =. Journal of the American Ceramic Society , month =

  11. [11]

    The fundamentals and applications of ferroelectric

    Uwe Schroeder and Min Hyuk Park and Thomas Mikolajick and Cheol Seong Hwang , doi =. The fundamentals and applications of ferroelectric. Nature Reviews Materials , month =

  12. [12]

    Böscke and Uwe Schröder and Stefan Mueller and Dennis Bräuhaus and Ulrich Böttger and Lothar Frey and Thomas Mikolajick , doi =

    Johannes Müller and Tim S. Böscke and Uwe Schröder and Stefan Mueller and Dennis Bräuhaus and Ulrich Böttger and Lothar Frey and Thomas Mikolajick , doi =. Ferroelectricity in Simple Binary. Nano Letters , month =

  13. [13]

    Flexoelectric engineering of van der

    Wenjie Ming and Boyuan Huang and Sizheng Zheng and Yinxin Bai and Junling Wang and Jie Wang and Jiangyu Li , doi =. Flexoelectric engineering of van der. Science Advances , month =

  14. [14]

    Belianinov and Q

    A. Belianinov and Q. He and A. Dziaugys and P. Maksymovych and E. Eliseev and A. Borisevich and A. Morozovska and J. Banys and Y. Vysochanskii and S. V. Kalinin , doi =. Nano Letters , month =

  15. [15]

    Seyler and Xiaobao Li and Peng Yu and Junhao Lin and Xuewen Wang and Jiadong Zhou and Hong Wang and Haiyong He and Sokrates T

    Fucai Liu and Lu You and Kyle L. Seyler and Xiaobao Li and Peng Yu and Junhao Lin and Xuewen Wang and Jiadong Zhou and Hong Wang and Haiyong He and Sokrates T. Pantelides and Wu Zhou and Pradeep Sharma and Xiaodong Xu and Pulickel M. Ajayan and Junling Wang and Zheng Liu , doi =. Room-temperature ferroelectricity in. Nature Communications , month =

  16. [16]

    Saha and Pai-Ying Liao and Shengjie Gao and Sabine M

    Mengwei Si and Atanu K. Saha and Pai-Ying Liao and Shengjie Gao and Sabine M. Neumayer and Jie Jian and Jingkai Qin and Nina Balke Wisinger and Haiyan Wang and Petro Maksymovych and Wenzhuo Wu and Sumeet K. Gupta and Peide D. Ye , doi =. Room-Temperature Electrocaloric Effect in Layered Ferroelectric. ACS Nano , month =

  17. [17]

    Alshareef and Tom Wu and Wenguang Zhu and Xiaoqing Pan and Lain-Jong Li , doi =

    Chaojie Cui and Wei-Jin Hu and Xingxu Yan and Christopher Addiego and Wenpei Gao and Yao Wang and Zhe Wang and Linze Li and Yingchun Cheng and Peng Li and Xixiang Zhang and Husam N. Alshareef and Tom Wu and Wenguang Zhu and Xiaoqing Pan and Lain-Jong Li , doi =. Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layere...

  18. [18]

    Nonvolatile Ferroelectric Memory Effect in Ultrathin ‐

    Siyuan Wan and Yue Li and Wei Li and Xiaoyu Mao and Chen Wang and Chen Chen and Jiyu Dong and Anmin Nie and Jianyong Xiang and Zhongyuan Liu and Wenguang Zhu and Hualing Zeng , doi =. Nonvolatile Ferroelectric Memory Effect in Ultrathin ‐. Advanced Functional Materials , month =

  19. [19]

    Room‐Temperature Ferroelectricity in Hexagonally Layered ‐

    Fei Xue and Weijin Hu and Ko‐Chun Lee and Li‐Syuan Lu and Junwei Zhang and Hao‐Ling Tang and Ali Han and Wei‐Ting Hsu and Shaobo Tu and Wen‐Hao Chang and Chen‐Hsin Lien and Jr‐Hau He and Zhidong Zhang and Lain‐Jong Li and Xixiang Zhang , doi =. Room‐Temperature Ferroelectricity in Hexagonally Layered ‐. Advanced Functional Materials , month =

  20. [20]

    Downer and Hailin Peng and Keji Lai , doi =

    Yu Zhou and Di Wu and Yihan Zhu and Yujin Cho and Qing He and Xiao Yang and Kevin Herrera and Zhaodong Chu and Yu Han and Michael C. Downer and Hailin Peng and Keji Lai , doi =. Out-of-Plane Piezoelectricity and Ferroelectricity in Layered -. Nano Letters , month =

  21. [21]

    Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal -

    Fei Xue and Junwei Zhang and Weijin Hu and Wei-Ting Hsu and Ali Han and Siu-Fung Leung and Jing-Kai Huang and Yi Wan and Shuhai Liu and Junli Zhang and Jr-Hau He and Wen-Hao Chang and Zhong Lin Wang and Xixiang Zhang and Lain-Jong Li , doi =. Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal -. ACS Nano , month =

  22. [22]

    Palomaki and Bosong Sun and Moira K

    Zaiyao Fei and Wenjin Zhao and Tauno A. Palomaki and Bosong Sun and Moira K. Miller and Zhiying Zhao and Jiaqiang Yan and Xiaodong Xu and David H. Cobden , doi =. Ferroelectric switching of a two-dimensional metal , volume =. Nature , month =

  23. [23]

    Towards two-dimensional van der

    Chuanshou Wang and Lu You and David Cobden and Junling Wang , doi =. Towards two-dimensional van der. Nature Materials , month =

  24. [24]

    Astrid Weston and Eli G. Castanon and Vladimir Enaldiev and Fábio Ferreira and Shubhadeep Bhattacharjee and Shuigang Xu and Héctor Corte-León and Zefei Wu and Nicholas Clark and Alex Summerfield and Teruo Hashimoto and Yunze Gao and Wendong Wang and Matthew Hamer and Harriet Read and Laura Fumagalli and Andrey V. Kretinin and Sarah J. Haigh and Olga Kazak...

  25. [25]

    Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides , volume =

    Lukas Rogée and Lvjin Wang and Yi Zhang and Songhua Cai and Peng Wang and Manish Chhowalla and Wei Ji and Shu Ping Lau , doi =. Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides , volume =. Science , month =

  26. [26]

    Vizner Stern and Y

    M. Vizner Stern and Y. Waschitz and W. Cao and I. Nevo and K. Watanabe and T. Taniguchi and E. Sela and M. Urbakh and O. Hod and M. Ben Shalom , doi =. Interfacial ferroelectricity by van der. Science , month =

  27. [27]

    Stacking-engineered ferroelectricity in bilayer boron nitride , volume =

    Kenji Yasuda and Xirui Wang and Kenji Watanabe and Takashi Taniguchi and Pablo Jarillo-Herrero , doi =. Stacking-engineered ferroelectricity in bilayer boron nitride , volume =. Science , month =

  28. [28]

    Xiang , doi =

    Junyi Ji and Guoliang Yu and Changsong Xu and H.J. Xiang , doi =. General Theory for Bilayer Stacking Ferroelectricity , volume =. Physical Review Letters , month =

  29. [29]

    Atypical Sliding and Moiré Ferroelectricity in Pure Multilayer Graphene , volume =

    Liu Yang and Shiping Ding and Jinhua Gao and Menghao Wu , doi =. Atypical Sliding and Moiré Ferroelectricity in Pure Multilayer Graphene , volume =. Physical Review Letters , month =

  30. [30]

    Binary Compound Bilayer and Multilayer with Vertical Polarizations: Two-Dimensional Ferroelectrics, Multiferroics, and Nanogenerators , volume =

    Lei Li and Menghao Wu , doi =. Binary Compound Bilayer and Multilayer with Vertical Polarizations: Two-Dimensional Ferroelectrics, Multiferroics, and Nanogenerators , volume =. ACS Nano , month =

  31. [31]

    Olsson and Deep Jariwala , doi =

    Kwan-Ho Kim and Ilya Karpov and Roy H. Olsson and Deep Jariwala , doi =. Wurtzite and fluorite ferroelectric materials for electronic memory , volume =. Nature Nanotechnology , month =

  32. [32]

    Empowering 2

    Hojoon Ryu and Kai Xu and Dawei Li and Xia Hong and Wenjuan Zhu , doi =. Empowering 2. Applied Physics Letters , month =

  33. [33]

    Shtansky and Xiaosheng Fang , doi =

    Jie Liu and Li Su and Xinglong Zhang and Dmitry V. Shtansky and Xiaosheng Fang , doi =. Ferroelectric–Optoelectronic Hybrid System for Photodetection , volume =. Small Methods , month =

  34. [34]

    Ferroelectric-based synapses and neurons for neuromorphic computing , volume =

    Erika Covi and Halid Mulaosmanovic and Benjamin Max and Stefan Slesazeck and Thomas Mikolajick , doi =. Ferroelectric-based synapses and neurons for neuromorphic computing , volume =. Neuromorphic Computing and Engineering , month =

  35. [35]

    Sliding ferroelectricity in 2

    Menghao Wu and Ju Li , doi =. Sliding ferroelectricity in 2. Proceedings of the National Academy of Sciences , month =

  36. [36]

    Advanced Materials , volume =

    Jiang, Hanjun and Li, Lei and Wu, Yao and Duan, Ruihuan and Yi, Kongyang and Wu, Lishu and Zhu, Chao and Luo, Lei and Xu, Manzhang and Zheng, Lu and Gan, Xuetao and Zhao, Wu and Wang, Xuewen and Liu, Zheng , title =. Advanced Materials , volume =. doi:https://doi.org/10.1002/adma.202400670 , url =. https://advanced.onlinelibrary.wiley.com/doi/pdf/10.1002/...

    work page doi:10.1002/adma.202400670

  37. [37]

    Sliding induced multiple polarization states in two-dimensional ferroelectrics , volume =

    Peng Meng and Yaze Wu and Renji Bian and Er Pan and Biao Dong and Xiaoxu Zhao and Jiangang Chen and Lishu Wu and Yuqi Sun and Qundong Fu and Qing Liu and Dong Shi and Qi Zhang and Yong-Wei Zhang and Zheng Liu and Fucai Liu , doi =. Sliding induced multiple polarization states in two-dimensional ferroelectrics , volume =. Nature Communications , month =

  38. [38]

    Tilo H. Yang and Bor-Wei Liang and Hsiang-Chi Hu and Fu-Xiang Chen and Sheng-Zhu Ho and Wen-Hao Chang and Liu Yang and Han-Chieh Lo and Tzu-Hao Kuo and Jyun-Hong Chen and Po-Yen Lin and Kristan Bryan Simbulan and Zhao-Feng Luo and Alice Chinghsuan Chang and Yi-Hao Kuo and Yu-Seng Ku and Yi-Cheng Chen and You-Jia Huang and Yu-Chen Chang and Yu-Fan Chiang a...

  39. [39]

    Cheema and Kenji Watanabe and Takashi Taniguchi and Efthimios Kaxiras and Pablo Jarillo-Herrero and Raymond Ashoori , doi =

    Kenji Yasuda and Evan Zalys-Geller and Xirui Wang and Daniel Bennett and Suraj S. Cheema and Kenji Watanabe and Takashi Taniguchi and Efthimios Kaxiras and Pablo Jarillo-Herrero and Raymond Ashoori , doi =. Ultrafast high-endurance memory based on sliding ferroelectrics , volume =. Science , month =

  40. [40]

    Tisdale and Ray Ashoori and Nuh Gedik and Liang Fu and Su-Yang Xu and Pablo Jarillo-Herrero , doi =

    Zhiren Zheng and Qiong Ma and Zhen Bi and Sergio de la Barrera and Ming-Hao Liu and Nannan Mao and Yang Zhang and Natasha Kiper and Kenji Watanabe and Takashi Taniguchi and Jing Kong and William A. Tisdale and Ray Ashoori and Nuh Gedik and Liang Fu and Su-Yang Xu and Pablo Jarillo-Herrero , doi =. Unconventional ferroelectricity in moiré heterostructures ...

  41. [41]

    Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride , volume =

    Fanrong Lin and Xiaoyu Xuan and Zhonghan Cao and Zhuhua Zhang and Ying Liu and Minmin Xue and Yang Hang and Xin Liu and Yizhou Zhao and Libo Gao and Wanlin Guo and Yanpeng Liu , doi =. Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride , volume =. Nature Communications , month =

  42. [42]

    Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides , volume =

    Xirui Wang and Kenji Yasuda and Yang Zhang and Song Liu and Kenji Watanabe and Takashi Taniguchi and James Hone and Liang Fu and Pablo Jarillo-Herrero , doi =. Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides , volume =. Nature Nanotechnology , month =

  43. [43]

    Identifying the Transition Order in an Artificial Ferroelectric van der

    Yang Liu and Song Liu and Baichang Li and Won Jong Yoo and James Hone , doi =. Identifying the Transition Order in an Artificial Ferroelectric van der. Nano Letters , month =

  44. [44]

    Twist‐Controlled Ferroelectricity and Emergent Multiferroicity in

    Yasir Hassan and Budhi Singh and Minwoong Joe and Byoung‐Min Son and Tien Dat Ngo and Younggeun Jang and Shaili Sett and Arup Singha and Rabindra Biswas and Monika Bhakar and Kenji Watanabe and Takashi Taniguchi and Varun Raghunathan and Goutam Sheet and Zonghoon Lee and Won Jong Yoo and Pawan Kumar Srivastava and Changgu Lee , doi =. Twist‐Controlled Fer...

  45. [45]

    Out-of-plane interface dipoles and anti-hysteresis in graphene-strontium titanate hybrid transistor , volume =

    Anindita Sahoo and Dhani Nafday and Tathagata Paul and Roald Ruiter and Arunesh Roy and Maxim Mostovoy and Tamalika Banerjee and Tanusri Saha-Dasgupta and Arindam Ghosh , doi =. Out-of-plane interface dipoles and anti-hysteresis in graphene-strontium titanate hybrid transistor , volume =. npj 2D Materials and Applications , month =

  46. [46]

    Humed Yusuf and Bent Nielsen and M

    M. Humed Yusuf and Bent Nielsen and M. Dawber and X. Du , doi =. Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface , volume =. Nano Letters , month =

  47. [47]

    M. V. Strikha , doi =. Mechanism of the antihysteresis behavior of the resistivity of graphene on a. JETP Letters , month =

  48. [48]

    Hysteresis of Electronic Transport in Graphene Transistors , volume =

    Haomin Wang and Yihong Wu and Chunxiao Cong and Jingzhi Shang and Ting Yu , doi =. Hysteresis of Electronic Transport in Graphene Transistors , volume =. ACS Nano , month =

  49. [49]

    Vo and Pankaj Sharma and Alexei Gruverman and Alexander Sinitskii , doi =

    Alexey Lipatov and Alexandra Fursina and Timothy H. Vo and Pankaj Sharma and Alexei Gruverman and Alexander Sinitskii , doi =. Polarization‐Dependent Electronic Transport in Graphene/. Advanced Electronic Materials , month =

  50. [50]

    Rajapitamahuni and J

    A. Rajapitamahuni and J. Hoffman and C. H. Ahn and X. Hong , doi =. Examining Graphene Field Effect Sensors for Ferroelectric Thin Film Studies , volume =. Nano Letters , month =

  51. [51]

    Mayorov and Kai Chang and Hongxin Yang and Lei Wang and Geliang Yu , doi =

    Siqi Jiang and Renjun Du and Jiawei Jiang and Gan Liu and Jiabei Huang and Yu Du and Yaqing Han and Jingkuan Xiao and Di Zhang and Fuzhuo Lian and Wanting Xu and Siqin Wang and Lei Qiao and Kenji Watanabe and Takashi Taniguchi and Xiaoxiang Xi and Wei Ren and Baigeng Wang and Alexander S. Mayorov and Kai Chang and Hongxin Yang and Lei Wang and Geliang Yu ...

  52. [52]

    Ferroelectric Single-Crystal Gated Graphene/Hexagonal-

    Nahee Park and Haeyong Kang and Jeongmin Park and Yourack Lee and Yoojoo Yun and Jeong-Ho Lee and Sang-Goo Lee and Young Hee Lee and Dongseok Suh , doi =. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-. ACS Nano , month =

  53. [53]

    Linnartz and Arwin Kool and Steffen Wiedmann and Amalia Patanè , doi =

    Anubhab Dey and Nathan Cottam and Oleg Makarovskiy and Wenjing Yan and Vaidotas Mišeikis and Camilla Coletti and James Kerfoot and Vladimir Korolkov and Laurence Eaves and Jasper F. Linnartz and Arwin Kool and Steffen Wiedmann and Amalia Patanè , doi =. Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure , volume =. Comm...

  54. [54]

    B., Abhijith and Ghosh, Prasenjit and Paromita Chanda, Prajna and Glavin, Nicholas R

    Paul, Sourav and M. B., Abhijith and Ghosh, Prasenjit and Paromita Chanda, Prajna and Glavin, Nicholas R. and Roy, Ajit K. and Watanabe, Kenji and Taniguchi, Takashi and Kochat, Vidya , title =. Journal of Applied Physics , volume =. 2023 , month =. doi:10.1063/5.0136373 , url =

    work page doi:10.1063/5.0136373 2023