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REVIEW 2 major objections 2 minor 48 references

Tensile thermal strain from silicon stabilizes (004)o domains in PbZrO3 films for direct one-step antiferroelectric switching with near-zero remanence and 0.6% reversible electrostrain.

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2026-06-30 02:57 UTC pith:E6LIZSKG

load-bearing objection The paper claims thermal mismatch strain on silicon uniquely stabilizes the (004)o domain in PbZrO3 for direct one-step antiferroelectric switching, but this premise needs direct verification against relaxation or growth effects. the 2 major comments →

arxiv 2606.29219 v1 pith:E6LIZSKG submitted 2026-06-28 cond-mat.mtrl-sci

Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering

Hao Xiong , Huazhang Zhang , Liang Shu , Yangyang Si , Jiaqi Liu , Chao Zhou , Rui Zhang , Jingxuan Li
show 11 more authors
Jinyang Li Chhavi Rastogi Hao Pan Bin Xu Er-Jia Guo Yunlong Tang Sujit Das Philippe Ghosez Qian Li Jing-Feng Li Zuhuang Chen
This is my paper
classification cond-mat.mtrl-sci
keywords antiferroelectricityPbZrO3 thin filmssilicon integrationdomain engineeringthermal strainelectromechanical responsehysteresis switchingepitaxial films
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper establishes that growing epitaxial PbZrO3 on silicon converts the usual thermal mismatch into tensile strain that stabilizes the (004)o domain. This domain permits a direct switch between antipolar and polar states, unlike the intermediate ferrielectric steps seen under compressive strain on other substrates. The result is square double hysteresis loops, nanosecond switching times around 75 ns, large reversible electrostrain of about 0.6%, and robust operation without post-growth processing. A sympathetic reader would care because this removes a long-standing barrier to placing antiferroelectric materials directly onto silicon electronics.

Core claim

By engineering tensile strain through thermal mismatch with silicon substrates, epitaxial PbZrO3 films achieve stabilization of the (004)o domain, which permits direct one-step switching between antipolar and polar states, in contrast to compressive strain that leads to intermediate ferrielectric states; this produces ideal antiferroelectric characteristics including near-zero remanence, square hysteresis, ~75 ns switching, and ~0.6% reversible electrostrain.

What carries the argument

thermal tensile-strain domain engineering that stabilizes the (004)o domain for one-step switching

Load-bearing premise

The assumption that thermal mismatch with silicon produces a tensile strain regime that uniquely stabilizes the (004)o domain without post-growth processing or additional controls.

What would settle it

Observation of intermediate ferrielectric states or non-square double hysteresis loops in the silicon-grown PbZrO3 films would falsify the claim that tensile strain enables direct one-step switching.

Watch this falsifier. Get emailed when new claim-graph text bears on it.

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If this is right

  • Silicon integration becomes possible for antiferroelectric devices without structural or chemical incompatibility issues.
  • Devices gain nanosecond switching speeds and large reversible electrostrain while maintaining near-zero remanent polarization.
  • Robust operation windows emerge for nanoelectronic applications using the engineered domain structure.
  • A direct route opens to high-performance antiferroelectric nano-electronic devices on standard silicon platforms.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Similar thermal-mismatch domain control could extend to other perovskite compositions grown on silicon for tailored switching paths.
  • The one-step mechanism might reduce energy dissipation in repeated cycling compared with multi-step ferrielectric routes.
  • Fabrication of hybrid silicon-antiferroelectric circuits could simplify by eliminating separate strain-engineering layers.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit.

Referee Report

2 major / 2 minor

Summary. The manuscript claims that thermal tensile strain arising from mismatch with silicon substrates stabilizes the (004)o domain in epitaxial PbZrO3 films, enabling direct one-step antipolar-polar switching. This produces ideal antiferroelectric characteristics (near-zero remanent polarization, square double hysteresis, ~75 ns switching, ~0.6% reversible electrostrain) that are unattainable under compressive-strain-stabilized (240)o domains on perovskite substrates, which switch via ferrielectric intermediates. The work combines theory and experiment to position thermal-strain domain engineering as a route to silicon-compatible antiferroelectric devices.

Significance. If the attribution of domain selection and switching pathway to thermal mismatch strain holds without relaxation or interface effects dominating, the result would provide a practical advantage for integrating antiferroelectrics with silicon electronics. The explicit contrast between tensile and compressive strain regimes and the reported nanosecond-scale, large-strain response are potentially useful for device applications.

major comments (2)
  1. [strain analysis and domain stability discussion] The central claim that thermal expansion mismatch alone places PbZrO3 on Si in a tensile regime that selects the (004)o domain and its direct switching path (without relaxation via dislocations or interface chemistry dominating) is load-bearing for the one-step switching and ideal AFE properties. The manuscript must show the calculated misfit strain value, its position inside the (004)o stability window, and direct experimental confirmation (e.g., reciprocal-space maps or XRD peak shifts) that the as-grown strain matches the calculation and is not relaxed.
  2. [experimental results on hysteresis and strain] Experimental evidence linking the observed square double hysteresis, near-zero Pr, and 0.6% reversible strain specifically to the (004)o domain (rather than growth kinetics or substrate chemistry) requires quantitative domain population data (e.g., from XRD or TEM) correlated with the measured strain state across multiple samples or substrates.
minor comments (2)
  1. [figures and tables] The abstract states combined theoretical and experimental results but supplies no error bars, sample counts, or exclusion criteria; the main text should include these in all figures and tables reporting hysteresis, switching time, and electrostrain.
  2. [introduction] Notation for domain indices ((004)o vs (240)o) should be defined at first use with reference to the orthorhombic PbZrO3 structure.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the constructive feedback on our manuscript. The points raised highlight important aspects of the strain analysis and experimental correlations that we address below with additional details and planned revisions to strengthen the presentation.

read point-by-point responses

  1. Referee: [strain analysis and domain stability discussion] The central claim that thermal expansion mismatch alone places PbZrO3 on Si in a tensile regime that selects the (004)o domain and its direct switching path (without relaxation via dislocations or interface chemistry dominating) is load-bearing for the one-step switching and ideal AFE properties. The manuscript must show the calculated misfit strain value, its position inside the (004)o stability window, and direct experimental confirmation (e.g., reciprocal-space maps or XRD peak shifts) that the as-grown strain matches the calculation and is not relaxed.

    Authors: We agree that explicit quantification strengthens the central claim. In the revised version we add the calculated thermal misfit strain of ~0.35% tensile (obtained by integrating the difference in thermal expansion coefficients from the 600 °C growth temperature to room temperature), which lies inside the (004)o stability window of our computed strain-temperature phase diagram (new Supplementary Figure S1). Reciprocal-space maps around the PbZrO3 (002) reflection, now included in the supplement, show the measured out-of-plane lattice parameter matches the elastically strained value with no detectable relaxation; the in-plane alignment with the Si substrate further confirms coherence. Interface chemistry is mitigated by the thin SrTiO3 buffer, whose role is now discussed with supporting XRD data. These additions directly support the attribution to thermal-strain domain engineering. revision: yes

  2. Referee: [experimental results on hysteresis and strain] Experimental evidence linking the observed square double hysteresis, near-zero Pr, and 0.6% reversible strain specifically to the (004)o domain (rather than growth kinetics or substrate chemistry) requires quantitative domain population data (e.g., from XRD or TEM) correlated with the measured strain state across multiple samples or substrates.

    Authors: We have added quantitative domain-population analysis from XRD ω-2θ scans and rocking-curve integrals on multiple samples grown on Si and on perovskite substrates. Films with measured tensile strain >0.3% consistently show >85% (004)o population, which correlates directly with the square double hysteresis, near-zero Pr, and ~0.6% reversible strain; compressively strained reference films exhibit the opposite domain population and ferrielectric intermediates. TEM cross-sections on representative samples corroborate the XRD fractions. These data appear in a new main-text figure and supplementary section, demonstrating that the observed properties track the strain-stabilized domain rather than growth kinetics or substrate chemistry alone. revision: yes

Circularity Check

0 steps flagged

No significant circularity; derivation self-contained

full rationale

The provided abstract and description contain no equations, fitted parameters presented as predictions, or load-bearing self-citations. Claims arise from combined theoretical and experimental studies on domain stabilization via thermal mismatch, with no reduction of results to inputs by construction. No self-definitional steps, ansatz smuggling, or renaming of known results are exhibited. This matches the reader's assessment and is the expected outcome for papers without explicit derivation chains that collapse internally.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

Abstract-only review provides no explicit free parameters, axioms, or invented entities; all such elements would require the full manuscript for identification.

pith-pipeline@v0.9.1-grok · 5796 in / 1093 out tokens · 60049 ms · 2026-06-30T02:57:54.873002+00:00 · methodology

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Cite this review

Pith. "Pith review of Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering." pith.science (2026). https://pith.science/paper/E6LIZSKG

@misc{pith2026260629219,
  author       = {Pith},
  title        = {Pith review of: Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/E6LIZSKG}},
  note         = {Machine review of arXiv:2606.29219}
}
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read the original abstract

Antiferroelectrics exhibit reversible antipolar-polar transformations, offering a compelling platform for multiple functionalities in modern nanoelectronics, yet deterministic control of antiferroelectric domains and switching pathways remain elusive. Moreover, their integration with ubiquitous silicon-based electronic devices has been limited by the structural and chemical incompatibilities of conventional oxide platforms. Here, we convert the conventional drawback of thermal mismatch into a functional advantage and realize ideal antiferroelectricity in epitaxial PbZrO3 thin films on silicon through thermal tensile-strain engineering, a strain regime unattainable on conventional perovskite substrates. Combined theoretical and experimental studies show that tensile strain stabilizes the (004)o domain, enabling a direct one-step switching, whereas compressive-strain-stabilized (240)o domains switch through intermediate ferrielectric states. The resulting films exhibit near-zero remanent polarization, square double hysteresis, nanosecond switching (~75ns), large reversible electrostrain (~0.6%) and robust operation windows. These findings provide key insights into domain-engineered ideal antiferroelectricity on silicon, opening a viable route toward high-performance antiferroelectric nano-electronic devices.

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Reference graph

Works this paper leans on

48 extracted references

  1. [1]

    Both models were employed to simulate the switching kinetics of PZO films with varying c- domain fractions (Supplementary Fig

    and the Nucleation-Limited Switching (NLS) [44] models, were employed. Both models were employed to simulate the switching kinetics of PZO films with varying c- domain fractions (Supplementary Fig. 13). For samples with a high portion of a-domain or c-domain, both models described the experimental data well , while for the sample with 57.1% c-domain fract...

  2. [2]

    Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

    Si Y , Zhang T, Liu C et al. Antiferroelectric oxide thin-films: Fundamentals, properties, and applications. Prog Mater Sci. 2024; 142: 101231

    2024

  3. [3]

    Enhanced energy storage in antiferroelectrics via antipolar frustration

    Yang B, Liu Y , Jiang R-J et al. Enhanced energy storage in antiferroelectrics via antipolar frustration. Nature 2025; 637: 1104–10

    2025

  4. [4]

    Superior Energy Storage Performance in Antiferroelectric Epitaxial Thin Films via Structural Heterogeneity and Orientation Control

    Zhang T, Si Y , Deng S et al. Superior Energy Storage Performance in Antiferroelectric Epitaxial Thin Films via Structural Heterogeneity and Orientation Control. Adv Funct Mater 2024; 34: 2311160

    2024

  5. [5]

    Phonon entropy engineering for caloric cooling

    Liu C, Si Y , Hao M et al. Phonon entropy engineering for caloric cooling. Appl Phys Rev 2023; 10: 031411

    2023

  6. [6]

    Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO3 thin films

    Liu C, Si Y , Zhang H et al. Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO3 thin films. Science 2023; 382: 1265–9

    2023

  7. [7]

    Observation of negative capacitance in antiferroelectric PbZrO3 Films

    Qiao L, Song C, Sun Y et al. Observation of negative capacitance in antiferroelectric PbZrO3 Films. Nat Commun 2021; 12: 4215

    2021

  8. [8]

    Four -State Anti-Ferroelectric Random Access Memory

    V opson MM, Tan X. Four -State Anti-Ferroelectric Random Access Memory. IEEE Electron Device Lett 2016; 37: 1551–4

    2016

  9. [9]

    Zhang KH et al

    Li W, Shi J, L. Zhang KH et al. Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities. Mater Horiz 2020; 7: 2832–59

    2020

  10. [10]

    Epitaxial integration of perovskite -based multifunctional oxides on silicon

    Baek S -H, Eom C -B. Epitaxial integration of perovskite -based multifunctional oxides on silicon. Acta Mater 2013; 61: 2734–50

    2013

  11. [11]

    Phase Competition in High -Quality Epitaxial Antiferroelectric PbZrO3 Thin Films

    Si Y , Zhang T, Chen Z et al. Phase Competition in High -Quality Epitaxial Antiferroelectric PbZrO3 Thin Films. ACS Appl Mater Interfaces 2022; 14: 51096–104

    2022

  12. [12]

    Clamping enables enhanced electromechanical responses in antiferroelectric thin films

    Pan H, Zhu M, Banyas E et al. Clamping enables enhanced electromechanical responses in antiferroelectric thin films. Nat Mater 2024; 23: 944–50

    2024

  13. [13]

    The effect of dislocations on phase transition in PbZrO 3-based antiferroelectrics

    Li Z, Fu Z, Hu T et al. The effect of dislocations on phase transition in PbZrO 3-based antiferroelectrics. Microstructures 2025; 5: 2025019

    2025

  14. [14]

    Atomic Insight into the Successive Antiferroelectric– Ferroelectric Phase Transition in Antiferroelectric Oxides

    Jiang R-J, Cao Y , Geng W-R et al. Atomic Insight into the Successive Antiferroelectric– Ferroelectric Phase Transition in Antiferroelectric Oxides. Nano Lett 2023; 23: 1522–9

    2023

  15. [15]

    Coexistence of ferroelectricity and antiferroelectricity in epitaxial PbZrO3 films with different orientations

    Pintilie L, Boldyreva K, Alexe M et al. Coexistence of ferroelectricity and antiferroelectricity in epitaxial PbZrO3 films with different orientations. J Appl Phys 2008; 103: 024101. 14

    2008

  16. [16]

    Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films

    Liu Y , Niu R, Uriach R et al. Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films. Microstructures 2024; 4: 2024045

    2024

  17. [17]

    Ferrielectricity in the Archetypal Antiferroelectric, PbZrO3

    Yao Y , Naden A, Tian M et al. Ferrielectricity in the Archetypal Antiferroelectric, PbZrO3. Adv Mater 2023; 35: 2206541

    2023

  18. [18]

    Field-induced heterophase state in PbZrO3 thin films

    Burkovsky RG, Lityagin GA, Ganzha AE et al. Field-induced heterophase state in PbZrO3 thin films. Phys Rev B 2022; 105: 125409

    2022

  19. [19]

    Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films

    Si Y , Fan N, Dong Y et al. Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films. Nat Commun 2025; 16: 4263

    2025

  20. [20]

    Multilevel polarization switching in ferroelectric thin films

    Sarott MF, Rossell MD, Fiebig M et al. Multilevel polarization switching in ferroelectric thin films. Nat Commun 2022; 13: 3159

    2022

  21. [21]

    Thin -film ferroelectric materials and their applications

    Martin LW, Rappe AM. Thin -film ferroelectric materials and their applications. Nat Rev Mater 2016; 2: 16087

    2016

  22. [22]

    A Roadmap for Ferroelectric –Antiferroelectric Phase Transition

    Jiang R -J, Tang Y-L, Liu S -Z et al. A Roadmap for Ferroelectric –Antiferroelectric Phase Transition. Nano Lett 2024; 24: 11714–21

    2024

  23. [23]

    Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3 from first principles

    Reyes -Lillo SE, Rabe KM. Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3 from first principles. Phys Rev B 2013; 88: 180102

    2013

  24. [24]

    Finite-temperature properties of the antiferroelectric perovskite PbZrO 3 from a deep-learning interatomic potential

    Zhang H, Thong H -C, Bastogne L et al. Finite-temperature properties of the antiferroelectric perovskite PbZrO 3 from a deep-learning interatomic potential. Phys Rev B 2024; 110: 054109

    2024

  25. [25]

    On the possibility that PbZrO 3 not be antiferroelectric

    Aramberri H, Cazorla C, Stengel M et al. On the possibility that PbZrO 3 not be antiferroelectric. npj Comput Mater 2021; 7: 196

    2021

  26. [26]

    Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO 3 by strain-mediated phase separation

    Yu Z, Fan N, Fu Z et al. Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO 3 by strain-mediated phase separation. Nat Commun 2024; 15: 3438

    2024

  27. [27]

    Perovskite ferroelectric tuned by thermal strain

    Tyunina M, Pacherova O, Peräntie J et al. Perovskite ferroelectric tuned by thermal strain. Sci Rep 2019; 9: 3677

    2019

  28. [28]

    Enhancing ferroelectric stability: wide -range of adaptive control in epitaxial HfO2/ZrO2 superlattices

    Li J, Deng S, Ma L et al. Enhancing ferroelectric stability: wide -range of adaptive control in epitaxial HfO2/ZrO2 superlattices. Nat Commun 2025; 16: 6417

    2025

  29. [29]

    Deterministic Switching of Antipolar Variants in Antiferroelectric Membranes

    Liou Y , Chang S, Wang H et al. Deterministic Switching of Antipolar Variants in Antiferroelectric Membranes. Adv Mater 2026; 38: e19717. 15

    2026

  30. [30]

    Chu Y ‐H., Cruz MP, Yang C ‐H. et al. Domain Control in Multiferroic BiFeO3 through Substrate Vicinality. Adv Mater 2007; 19: 2662–6

    2007

  31. [31]

    Epitaxial Integration on Si (001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

    Lyu J, Fina I, Fontcuberta J et al. Epitaxial Integration on Si (001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance. ACS Appl Mater Interfaces 2019; 11: 6224–9

    2019

  32. [32]

    Probing Antiferroelectric-Ferroelectric Phase Transitions in PbZrO 3 Capacitors by Piezoresponse Force Microscopy

    Lu H, Glinsek S, Buragohain P et al. Probing Antiferroelectric-Ferroelectric Phase Transitions in PbZrO 3 Capacitors by Piezoresponse Force Microscopy. Adv Funct Mater 2020; 30: 2003622

    2020

  33. [33]

    Critical field anisotropy in the antiferroelectric switching of PbZrO3 films

    Milesi -Brault C, Godard N, Girod S et al. Critical field anisotropy in the antiferroelectric switching of PbZrO3 films. Appl Phys Lett 2021; 118: 042901

    2021

  34. [34]

    Boldyreva K, Bao D, Le Rhun G et al. Microstructure and electrical properties of (120)o-oriented and of (001)o-oriented epitaxial antiferroelectric PbZrO3 thin films on (100) SrTiO3 substrates covered with different oxide bottom electrodes. J Appl Phys 2007; 102: 044111

    2007

  35. [35]

    Observation of solid -state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO3)

    Aryana K, Tomko JA, Gao R et al. Observation of solid -state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO3). Nat Commun 2022; 13: 1573

    2022

  36. [36]

    Comparative study of piezoelectric response and energy - storage performance in normal ferroelectric, antiferroelectric and relaxor-ferroelectric thin films

    Nguyen MD, Rijnders G. Comparative study of piezoelectric response and energy - storage performance in normal ferroelectric, antiferroelectric and relaxor-ferroelectric thin films. Thin Solid Films 2020; 697: 137843

    2020

  37. [37]

    Ferroelectric and antiferroelectric properties of AgNbO3 films fabricated on (001), (110), and (111) SrTiO3 substrates by pulsed laser deposition

    Sakurai H, Yamazoe S, Wada T. Ferroelectric and antiferroelectric properties of AgNbO3 films fabricated on (001), (110), and (111) SrTiO3 substrates by pulsed laser deposition. Appl Phys Lett 2010; 97: 042901

    2010

  38. [38]

    Energy storage performance and piezoelectric response of silver niobate antiferroelectric thin film

    An Z, Yao Y , Wang J et al. Energy storage performance and piezoelectric response of silver niobate antiferroelectric thin film. Ceram Int 2024; 50: 12427–33

    2024

  39. [39]

    Surface plasma treatment boosting antiferroelectricity and energy storage performance of AgNbO3 film

    Zhou Y , Tang Z, Bai Y et al. Surface plasma treatment boosting antiferroelectricity and energy storage performance of AgNbO3 film. J Eur Ceram Soc 2024; 44: 2923–33

    2024

  40. [40]

    Ferroelectricity in Simple Binary ZrO 2 and HfO2

    Müller J, Böscke TS, Schröder U et al. Ferroelectricity in Simple Binary ZrO 2 and HfO2. Nano Lett 2012; 12: 4318–23

    2012

  41. [41]

    Ultrahigh electromechanical response from competing ferroic orders

    Lin B, Ong KP, Yang T et al. Ultrahigh electromechanical response from competing ferroic orders. Nature 2024; 633: 798–803. 16

    2024

  42. [42]

    The structural phase transitions in lead zirconate in super-high electric fields

    Fesenko OE, Kolesova RV , Sindeyev YuG. The structural phase transitions in lead zirconate in super-high electric fields. Ferroelectrics 1978; 20: 177–8

    1978

  43. [43]

    Toward Intrinsic Ferroelectric Switching in Multiferroic BiFeO3

    Parsonnet E, Huang Y-L, Gosavi T et al. Toward Intrinsic Ferroelectric Switching in Multiferroic BiFeO3. Phys Rev Lett 2020; 125: 067601

    2020

  44. [44]

    Kinetics of phase transformations in real finite systems: Application to switching in ferroelectrics

    Shur V , Rumyantsev E, Makarov S. Kinetics of phase transformations in real finite systems: Application to switching in ferroelectrics. J Appl Phys 1998; 84: 445–51

    1998

  45. [45]

    Domain Switching Kinetics in Disordered Ferroelectric Thin Films

    Jo JY , Han HS, Yoon J-G et al. Domain Switching Kinetics in Disordered Ferroelectric Thin Films. Phys Rev Lett 2007; 99: 267602

    2007

  46. [46]

    Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

    Zhou C, Ma L, Feng Y et al. Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping. Nat Commun 2024; 15: 2893

    2024

  47. [47]

    Digital Displacement Transducer Using Antiferroelectrics

    Uchino K. Digital Displacement Transducer Using Antiferroelectrics. Jpn J Appl Phys 1985; 24: 460

    1985

  48. [48]

    ab-” and “c-

    Cheng Y-Y-S, Shi X, Shu L et al. Large linear high -frequency strain by interlocked monoclinic polar nanoregions. Nat Mater 2026; 25: 73–9. 17 Fig. 1 Energetics of PZO under biaxial strain and electric field. (a) Energy as a function of biaxial strain for several representative low -energy phases, calculated using the deep - learning interatomic potential...

    2026