Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-06-30T03:02:16.317779Z
Paper Citation Record · LEDGER
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering
As of 5 August 2026, this Paper Citation Record lists 48 of 48 outbound references and 0 inbound Pith citation observations for arXiv:2606.29219.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-05T06:32:48.257954+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
Reference resolution
48 of 48 outbound references displayed
- verified exact0
- verified fuzzy0
- unresolved48
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation 660e4b6f-b48e-434f-8647-5928c271b8c2 · outbound
This paper cites Both models were employed to simulate the switching kinetics of PZO films with varying c- domain fractions (Supplementary Fig.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Both models were employed to simulate the switching kinetics of PZO films with varying c- domain fractions (Supplementary Fig
Reference 1
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 1afe9ba2-da99-47e4-b0dd-61d0df9d3178 · outbound
This paper cites Antiferroelectric oxide thin-films: Fundamentals, properties, and applications.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
Reference 2
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 722d2257-9086-42a4-bdca-1413c92dafeb · outbound
This paper cites Enhanced energy storage in antiferroelectrics via antipolar frustration.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Enhanced energy storage in antiferroelectrics via antipolar frustration
Reference 3
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 1a8c83df-e061-4394-a23c-163009062e6e · outbound
This paper cites Superior Energy Storage Performance in Antiferroelectric Epitaxial Thin Films via Structural Heterogeneity and Orientation Control.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Superior Energy Storage Performance in Antiferroelectric Epitaxial Thin Films via Structural Heterogeneity and Orientation Control
Reference 4
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 02ab0345-1505-479d-996e-3c4c9bdb11f4 · outbound
This paper cites Phonon entropy engineering for caloric cooling.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Phonon entropy engineering for caloric cooling
Reference 5
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 25c634b3-433a-49a8-8b5c-ba6020e07823 · outbound
This paper cites Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO3 thin films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO3 thin films
Reference 6
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 5cd5adb3-ac4f-48d8-8ea3-c4baa52252f5 · outbound
This paper cites Observation of negative capacitance in antiferroelectric PbZrO3 Films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Observation of negative capacitance in antiferroelectric PbZrO3 Films
Reference 7
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 93007098-48b0-470f-ac03-f3504d62648b · outbound
This paper cites Four -State Anti-Ferroelectric Random Access Memory.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Four -State Anti-Ferroelectric Random Access Memory
Reference 8
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 58157b18-6c41-4d29-a15f-6456c8804ade · outbound
This paper cites Zhang KH et al.
Reference 9
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation bb17a582-86f3-4c20-bc7c-67069dd83940 · outbound
This paper cites Epitaxial integration of perovskite -based multifunctional oxides on silicon.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Epitaxial integration of perovskite -based multifunctional oxides on silicon
Reference 10
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation a9ce9fe7-a10c-451b-9c14-924522cb452b · outbound
This paper cites Phase Competition in High -Quality Epitaxial Antiferroelectric PbZrO3 Thin Films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Phase Competition in High -Quality Epitaxial Antiferroelectric PbZrO3 Thin Films
Reference 11
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation eab40311-bab5-4c8b-8c82-98188ed981cd · outbound
This paper cites Clamping enables enhanced electromechanical responses in antiferroelectric thin films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Clamping enables enhanced electromechanical responses in antiferroelectric thin films
Reference 12
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 229f31bd-405d-4bea-a4b6-d478d9adc652 · outbound
This paper cites The effect of dislocations on phase transition in PbZrO 3-based antiferroelectrics.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering The effect of dislocations on phase transition in PbZrO 3-based antiferroelectrics
Reference 13
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation bc65ec91-4b4b-477e-9664-fdca42151ca5 · outbound
This paper cites Atomic Insight into the Successive Antiferroelectric– Ferroelectric Phase Transition in Antiferroelectric Oxides.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Atomic Insight into the Successive Antiferroelectric– Ferroelectric Phase Transition in Antiferroelectric Oxides
Reference 14
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 8d82f68d-293a-46db-9537-80d708b597c1 · outbound
This paper cites Coexistence of ferroelectricity and antiferroelectricity in epitaxial PbZrO3 films with different orientations.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Coexistence of ferroelectricity and antiferroelectricity in epitaxial PbZrO3 films with different orientations
Reference 15
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation dacf4b13-a379-4397-9a50-400eacb573ee · outbound
This paper cites Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films
Reference 16
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 1e978640-8c5a-465a-8dfb-c248589e46df · outbound
This paper cites Ferrielectricity in the Archetypal Antiferroelectric, PbZrO3.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Ferrielectricity in the Archetypal Antiferroelectric, PbZrO3
Reference 17
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 28480440-2df6-4b53-8887-88cdfd1d9bf0 · outbound
This paper cites Field-induced heterophase state in PbZrO3 thin films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Field-induced heterophase state in PbZrO3 thin films
Reference 18
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 4844b9dc-4da6-47c5-9adf-eec2ad0974e7 · outbound
This paper cites Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films
Reference 19
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 10000d45-2e7d-4e1f-89a6-05c7943e422d · outbound
This paper cites Multilevel polarization switching in ferroelectric thin films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Multilevel polarization switching in ferroelectric thin films
Reference 20
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 757a0931-806b-4a5d-b5c5-6c37980eaeb1 · outbound
This paper cites Thin -film ferroelectric materials and their applications.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Thin -film ferroelectric materials and their applications
Reference 21
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation eb50c640-56e9-4ad2-9e09-2bcb4945254a · outbound
This paper cites A Roadmap for Ferroelectric –Antiferroelectric Phase Transition.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering A Roadmap for Ferroelectric –Antiferroelectric Phase Transition
Reference 22
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 3ecb50b3-4b4a-4f8e-821b-fd89871cf7f8 · outbound
This paper cites Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3 from first principles.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3 from first principles
Reference 23
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 7b34eb97-7df1-4f2f-89ad-efd814ac1d3f · outbound
This paper cites Finite-temperature properties of the antiferroelectric perovskite PbZrO 3 from a deep-learning interatomic potential.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Finite-temperature properties of the antiferroelectric perovskite PbZrO 3 from a deep-learning interatomic potential
Reference 24
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 3a47469d-469b-42e6-af68-2ecde36bbf86 · outbound
This paper cites On the possibility that PbZrO 3 not be antiferroelectric.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering On the possibility that PbZrO 3 not be antiferroelectric
Reference 25
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 7f18232c-bb4a-459e-b053-1ddb4cb994ce · outbound
This paper cites Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO 3 by strain-mediated phase separation.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO 3 by strain-mediated phase separation
Reference 26
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 793decd5-7e01-4881-aa99-bcfb70d972d7 · outbound
This paper cites Perovskite ferroelectric tuned by thermal strain.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Perovskite ferroelectric tuned by thermal strain
Reference 27
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 1c40c166-ea5f-49c9-a946-6053e0331c71 · outbound
This paper cites Enhancing ferroelectric stability: wide -range of adaptive control in epitaxial HfO2/ZrO2 superlattices.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Enhancing ferroelectric stability: wide -range of adaptive control in epitaxial HfO2/ZrO2 superlattices
Reference 28
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation db2af8c8-61a3-4829-a663-0bfa84d36d11 · outbound
This paper cites Deterministic Switching of Antipolar Variants in Antiferroelectric Membranes.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Deterministic Switching of Antipolar Variants in Antiferroelectric Membranes
Reference 29
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 82329164-7b0d-489e-98d8-2ef4e05f5618 · outbound
This paper cites an unresolved cited work.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Unresolved cited work
Reference 30
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation cbd990d6-0d7f-4998-ac4e-4939853d6572 · outbound
This paper cites Epitaxial Integration on Si (001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Epitaxial Integration on Si (001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
Reference 31
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 555ac44e-c627-4db2-b145-2fbc01410d89 · outbound
This paper cites Probing Antiferroelectric-Ferroelectric Phase Transitions in PbZrO 3 Capacitors by Piezoresponse Force Microscopy.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Probing Antiferroelectric-Ferroelectric Phase Transitions in PbZrO 3 Capacitors by Piezoresponse Force Microscopy
Reference 32
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 9b39df97-891a-4780-af13-5612080ea66a · outbound
This paper cites Critical field anisotropy in the antiferroelectric switching of PbZrO3 films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Critical field anisotropy in the antiferroelectric switching of PbZrO3 films
Reference 33
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation a121077d-12d7-4782-8037-50959ed16b44 · outbound
This paper cites an unresolved cited work.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Unresolved cited work
Reference 34
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation d4f76731-fe9c-49ab-8214-5cfd157e0d62 · outbound
This paper cites Observation of solid -state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO3).
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Observation of solid -state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO3)
Reference 35
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 89e0bfd7-f74f-42f0-8db1-567f7494ad6e · outbound
This paper cites Comparative study of piezoelectric response and energy - storage performance in normal ferroelectric, antiferroelectric and relaxor-ferroelectric thin films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Comparative study of piezoelectric response and energy - storage performance in normal ferroelectric, antiferroelectric and relaxor-ferroelectric thin films
Reference 36
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation ce666522-50df-4a01-9e3c-22e34adfb94d · outbound
This paper cites Ferroelectric and antiferroelectric properties of AgNbO3 films fabricated on (001), (110), and (111) SrTiO3 substrates by pulsed laser deposition.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Ferroelectric and antiferroelectric properties of AgNbO3 films fabricated on (001), (110), and (111) SrTiO3 substrates by pulsed laser deposition
Reference 37
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation e5c72643-30df-4bba-b628-eba1f78e0d40 · outbound
This paper cites Energy storage performance and piezoelectric response of silver niobate antiferroelectric thin film.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Energy storage performance and piezoelectric response of silver niobate antiferroelectric thin film
Reference 38
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 538978be-e3bd-40e3-b37b-a6fcf5e33518 · outbound
This paper cites Surface plasma treatment boosting antiferroelectricity and energy storage performance of AgNbO3 film.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Surface plasma treatment boosting antiferroelectricity and energy storage performance of AgNbO3 film
Reference 39
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 3de0ab7b-bf6c-4e54-ad06-d1155846d5e4 · outbound
This paper cites Ferroelectricity in Simple Binary ZrO 2 and HfO2.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Ferroelectricity in Simple Binary ZrO 2 and HfO2
Reference 40
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 1b05955e-cb45-4b90-9ab8-766bd1a83b05 · outbound
This paper cites Ultrahigh electromechanical response from competing ferroic orders.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Ultrahigh electromechanical response from competing ferroic orders
Reference 41
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 2c3c22ea-8865-457c-89ce-b1beab3ae78e · outbound
This paper cites The structural phase transitions in lead zirconate in super-high electric fields.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering The structural phase transitions in lead zirconate in super-high electric fields
Reference 42
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 82bb2903-f1ef-4501-9264-78445446355a · outbound
This paper cites Toward Intrinsic Ferroelectric Switching in Multiferroic BiFeO3.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Toward Intrinsic Ferroelectric Switching in Multiferroic BiFeO3
Reference 43
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 9229b088-10c5-4d27-afae-a55c0e7cee82 · outbound
This paper cites Kinetics of phase transformations in real finite systems: Application to switching in ferroelectrics.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Kinetics of phase transformations in real finite systems: Application to switching in ferroelectrics
Reference 44
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation b0345a2a-47dc-432f-a469-c372f8ed58de · outbound
This paper cites Domain Switching Kinetics in Disordered Ferroelectric Thin Films.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Domain Switching Kinetics in Disordered Ferroelectric Thin Films
Reference 45
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 9907f757-2d60-48c2-bad6-8d9aba52b521 · outbound
This paper cites Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
Reference 46
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation a9ae98f1-83df-428e-a6da-0b9f96dfccb8 · outbound
This paper cites Digital Displacement Transducer Using Antiferroelectrics.
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering Digital Displacement Transducer Using Antiferroelectrics
Reference 47
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 72054142-154d-49a3-a027-4ed616e77a1d · outbound
This paper cites ab-” and “c-.
Reference 48
- Resolution
- unresolved
- no resolver link, observed 2026-06-30T03:02:16.317779Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Pith citing papers
No inbound Pith citation observations are available.