Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2

Beomkyu Shin; Kenji Watanabe; Ki-Ju Yee; Seong-Yeon Lee; Soungmin Bae; Sung-Ha Kim; Tae-Jeong Kim; Takashi Taniguchi; Young-Jun Yu

REVIEW 2 major objections 5 minor 9 references

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2

T0 review · 2 major / 5 minor · reviewed 2026-07-12 · grok-4.5

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read Persistent UV photodoping in WSe2/hBN FETs is enabled by defect states in the SiO2 substrate, not by defects in hBN.

desk verdict Solid experimental reassignment of photodoping from hBN defects to SiO2 traps; the oxide-removal control is decisive if you accept the etch equivalence, which is under-documented but not fatal. read the letter →

arxiv 2607.03121 v1 pith:XRGKPM3C submitted 2026-07-03 cond-mat.mes-hall cond-mat.mtrl-sciphysics.app-ph

Sung-Ha Kim , Seong-Yeon Lee , Tae-Jeong Kim , Beomkyu Shin , Young-Jun Yu , Kenji Watanabe , Takashi Taniguchi , Soungmin Bae

show 1 more author

Ki-Ju Yee

This is my paper · ORCID

classification cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

keywords photodopingvanderWaalsheterostructureSiO2defectschargetransferWSe2hBNfield-effecttransistorphotogating

verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper shows that the long-lived n- and p-type carrier doping seen when WSe2/hBN field-effect transistors are illuminated by UV light comes from trap states in the underlying SiO2, not from the hexagonal boron nitride layer that most earlier work blamed. Wavelength and polarity dependence, the complete lack of thickness scaling with hBN, and first-principles defect energies all rule out hBN as the source. The decisive experiment is that both polarities of photodoping collapse once the SiO2 is etched away. The result matters because it reassigns the microscopic origin of a widely used rewritable doping method and tells device designers that the oxide substrate, not the 2D stack, is the charge reservoir that must be engineered.

What carries the argument

SiO2 defect states acting as long-lived charge reservoirs: deep electron traps (~2.8–3.0 eV below the conduction band) efficiently emptied by 405 nm photons and shallow/short-lived hole traps that limit p-type efficiency; carriers tunnel or hop across hBN into the WSe2 channel under the gate field.

What would settle it

Fabricate identical WSe2/hBN devices on a different dielectric (e.g., Al2O3 or high-quality thermal oxide free of E' centers) that still supports gating; if persistent UV photodoping of both polarities reappears at the same rates, the SiO2-defect claim is falsified.

Watch

Extended reading notes

Core claim

In multilayer WSe2/hBN heterostructure FETs on SiO2/p-Si, UV (405 nm) illumination under gate bias produces large, persistent n-type (and weaker p-type) photodoping that saturates at sheet densities of a few 10^12 cm^{-2}. The same process is orders of magnitude weaker under 640 nm light. Removing the SiO2 layer by wet etch suppresses both polarities almost completely, while photodoping rate is independent of hBN thickness and DFT shows hBN defect levels remain optically accessible under conditions where doping is experimentally absent. Therefore the dominant charge reservoirs are deep electron and hole traps in the amorphous SiO2 that exchange carriers with the WSe2 channel through the hBN

Load-bearing premise

Wet-etch removal of the SiO2 leaves the WSe2/hBN interfaces, contact quality, residual adsorbates and gate-field distribution electrically equivalent to the control devices, so the disappearance of photodoping can be attributed solely to the missing oxide traps.

Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Desk Editor's Note

read the letter

The new result is the near-total suppression of both n- and p-type photodoping once SiO2 is wet-etched away (Fig. 5/S5), combined with hBN-thickness independence (S4) and DFT that leaves hBN defects optically accessible under 640 nm where doping is negligible. That package cleanly reassigns the charge reservoir from the hBN bulk (the default story in Table S1) to oxide traps. It is not a new device concept, but it is a real mechanistic correction for a technique people already use for rewritable doping and photogating.

What they do well: wavelength and polarity asymmetry (Fig. 3), stretched-exponential kinetics linear in photon flux (Fig. 4), KPFM work-function shifts confirming actual carrier transfer (S6), multi-hour persistence (S7), and a literature table that honestly maps prior interpretations. The SiO2 trap energies are taken from the external literature and used only for qualitative consistency; no free parameters are recycled as predictions. Circular burden is low.

The soft spot is exactly the one the stress-test flags: after etch the gate dielectric is only hBN, so they drop |VEx| from 50 V to 3 V, and they show only one etched pair with mismatched WSe2 thicknesses (16 vs 33 nm) and no post-etch AFM/Raman/mobility statistics. If the etch damages the stack or changes residual adsorbates, the suppression could be partly artifactual. That is a real documentation gap, not a load-bearing contradiction; the multi-control pattern still points the same way. I would not over-weight it into a rejection.

This is for people who build or model TMD/hBN FETs and care about where the traps actually sit. It deserves a serious referee who will demand better etch-control characterization and perhaps a second etched device. I would cite it when discussing photodoping origins and would bring it to reading group.

Referee Report

2 major / 5 minor

Summary. The manuscript reports UV-induced persistent photodoping in multilayer WSe2/hBN FETs on SiO2/p-Si and attributes the effect to defect states in the SiO2 substrate rather than to hBN or WSe2 defects. Wavelength- and polarity-dependent transfer-curve shifts show that 405 nm n-type photodoping is orders of magnitude more efficient than 640 nm excitation or p-type doping, with sheet densities up to ~3.7e12 cm^-2. Control devices with different hBN thicknesses show no thickness scaling (Fig. S4); first-principles excitation energies of representative hBN defects remain accessible under 640 nm, inconsistent with the observed suppression; and wet-etch removal of SiO2 nearly eliminates both n- and p-type photodoping (Fig. 5/S5). Supporting KPFM work-function shifts and multi-hour retention are provided. The authors conclude that deep SiO2 traps act as long-lived charge reservoirs that enable charge transfer through hBN into the WSe2 channel.

Significance. If the SiO2-trap assignment holds, the work revises a widely cited picture in which photodoping of TMD/hBN devices is ascribed primarily to donor-like defects in hBN (Table S1). The combination of wavelength/polarity asymmetry, hBN-thickness independence, DFT exclusion of bulk hBN defects, and the oxide-removal control is a coherent experimental package that would reorient device design toward substrate engineering for rewritable optical doping, photogating, and neuromorphic optoelectronics. The stretched-exponential kinetics and KPFM confirmation of real carrier transfer are additional strengths. The result is therefore of clear interest to the 2D optoelectronics community, provided the oxide-removal control is shown to be free of process artifacts.

major comments (2)

[Fig. 5 / Fig. S5 and Methods] The decisive control is the near-total suppression of both polarities after wet-etch removal of SiO2 (Fig. 5 and Fig. S5). After etch the gate dielectric is only residual hBN, so |VEx| is reduced from 50 V to 3 V; the etched device also has a different WSe2 thickness (33 nm vs 16 nm). No post-etch AFM, Raman, mobility statistics, or contact I–V comparison is reported to establish that channel quality, residual adsorbates, and gate-field distribution remain equivalent. Without that equivalence the suppression could partly reflect etch-induced damage or altered electrostatics rather than the absence of oxide traps. Additional characterization of the etched stack (or a second independent control, e.g., devices fabricated on hBN/Si without ever seeing SiO2) is needed to make the central claim load-bearing.
[§2 Discussion and Fig. 6] The proposed microscopic pathway—optical activation of deep SiO2 traps followed by charge transfer through tens of nm of hBN into WSe2—is left largely schematic (Fig. 6B). The manuscript does not quantify tunneling or hopping rates, nor does it address how the gate field and the hBN barrier jointly enable the observed polarity asymmetry and the three-order-of-magnitude wavelength contrast. A short estimate of transfer probability or a comparison with known SiO2/hBN interface trap densities would strengthen the mechanistic claim that SiO2 defects, rather than interface states created by the etch or by residual polymer, are the actual reservoirs.

minor comments (5)

[Fig. 1 / Fig. S1 / Fig. S5] Main-text AFM thicknesses (47 nm hBN, 12 nm WSe2) disagree with Fig. S1 captions (44 nm / 9 nm) and with the device used for the SiO2-removal comparison (16 nm / 38 nm). Please reconcile all thickness values and state which device corresponds to which figure.
[Fig. 2B] Fig. 2B caption writes “IDS = 0.3 A”; the text and other figures use 0.3 µA. Correct the unit.
[§2 Results] The capacitance used for mobility and sheet-density extraction (C = 9.75 nF cm^-2) is stated without an explicit series-capacitance formula for the 300 nm SiO2 + bottom-hBN stack; a one-line derivation would aid reproducibility.
[Introduction / Table S1] Table S1 is a useful literature survey; a short sentence in the main text noting which prior works already mentioned BN/SiO2 interface traps (e.g., L2, L5, L7) would better position the novelty claim.
[References] Several references appear with incomplete or slightly garbled formatting (e.g., “Appli. Surf. Sci.”, “Nat. Nanotechnol.” vs “Nat. Nanotechnology”). Standardize journal abbreviations.

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity: experimental comparative argument with independent DFT and external literature defect energies; no fitted parameters recycled as predictions.

full rationale

The paper's central claim—that SiO2 defect states (not hBN or WSe2 defects) act as charge reservoirs for persistent photodoping—is established by direct experimental comparison (photodoping suppressed when SiO2 is wet-etched away; Fig. 5 / S5), wavelength/polarity dependence, and hBN-thickness independence (Fig. S4). First-principles HSE06 calculations of hBN defect excitation energies are independent computations used only to show that hBN defects remain optically accessible under 640 nm, contradicting the negligible experimental p-type doping under that condition; they are not fitted to force the conclusion. SiO2 trap-state energies are taken from external literature (El-Sayed et al., Nicklaw et al., Sushko et al., Yue et al.) and used only for qualitative consistency with the observed 405 nm vs 640 nm asymmetry. No parameters are fitted to data and then re-presented as predictions; no uniqueness theorems or load-bearing self-citations close a definitional loop. The derivation chain is therefore self-contained and non-circular. (Possible experimental confounds of the etch control are a correctness/robustness issue, not circularity.)

Assumptions & free parameters 0 free parameters · 4 assumptions · 0 invented entities

The central claim rests on standard device-physics relations, literature values for SiO2 trap energies, and the experimental premise that wet-etch removal of SiO2 does not introduce confounding damage. No free parameters are fitted to produce the main conclusion; DFT is used only for qualitative exclusion of hBN defects. No new physical entities are invented.

assumptions (4)

domain assumption Sheet carrier density is given by σ = C V, with C the series capacitance of SiO2 + hBN.
Used to convert threshold-voltage shifts into carrier densities (text after Fig. 2).
domain assumption Deep electron traps in amorphous SiO2 lie ~2.8–3.0 eV below the conduction-band minimum and deep hole traps ~4.3–4.6 eV above the valence-band maximum (literature values).
Invoked in Fig. 6A and surrounding text to explain wavelength and polarity selectivity.
ad hoc to paper Wet-etch removal of the SiO2 layer leaves the WSe2/hBN electronic structure and contact quality sufficiently unaltered that the observed photodoping suppression can be attributed to the absence of oxide traps.
Implicit premise of the key control experiment (Fig. 5, Methods).
domain assumption HSE06 + D3 hybrid-functional DFT with finite-size corrections yields reliable vertical excitation energies for hBN point defects.
Supporting Information first-principles section; used to show that hBN defects remain optically accessible under 640 nm.

how reviews work

0 comments

Cite this review

Pith. "Pith review of Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2." pith.science (2026). https://pith.science/paper/XRGKPM3C

@misc{pith2026260703121,
  author       = {Pith},
  title        = {Pith review of: Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/XRGKPM3C}},
  note         = {Machine review of arXiv:2607.03121}
}

read the original abstract

Photodoping plays an important role in determining the optoelectronic response of two-dimensional semiconductor devices; however, the origin of the responsible trap states remains unclear. In this work, we investigate UV-induced photodoping in multilayer WSe2 field-effect transistors (FETs) based on WSe2/hBN heterostructures on SiO2/p-Si substrates. Wavelength-dependent measurements reveal pronounced n-type photodoping under 405 nm illumination, whereas the effect is orders of magnitude weaker under 640 nm excitation and for p-type photodoping. Furthermore, when the SiO2 layer is removed, both n-type and p-type photodoping are strongly suppressed, demonstrating that the oxide layer is essential for persistent photodoping. Analysis of defect-state distributions in amorphous SiO2, together with first-principles calculations for hBN defects, shows that the experimental observations cannot be explained by defects in hBN. Instead, the results indicate that defect states in the SiO2 substrate act as charge reservoirs that facilitate charge transfer and long-term carrier trapping. These findings highlight the dominant role of substrate-related trap states in UV-induced photodoping and photogating behavior in WSe2 FET devices.

Figures

Figures reproduced from arXiv: 2607.03121 by the authors.

**Figure 3.** A presents the transfer curves obtained after 405 nm laser illumination at VEx = −50 V for n-type photodoping, with the exposure time varied up to 50 s. The negative horizontal shift of the transfer curves, while maintaining their overall shape, indicates gradual electron doping in the WSe2 channel with increasing exposure time. The shift eventually [PITH_FULL_IMAGE:figures/full_fig_p007_3.png] view at source ↗

**Figure 1.** A) Schematic illustration of the WSe2/hBN heterostructure field-effect transistor (FET) used for photodoping under gate bias and illumination. B) Optical microscope image of the fabricated device, where B-hBN is for bottom hBN and T-hBN for top hBN. C) Drain– source current (IDS) as a function of gate voltage (VG), with the corresponding semi-log plot shown in the inset. D) Drain–source current–voltage (IDS–VDS) cha… view at source ↗

**Figure 2.** A) Photodoping induced shift of the transfer curve obtained after 405 nm laser [PITH_FULL_IMAGE:figures/full_fig_p016_2.png] view at source ↗

Figures from the paper (4 more)

**Figure 3.** Figure 3: Exposure time dependence of the transfer curve obtained after laser exposure of [PITH_FULL_IMAGE:figures/full_fig_p017_3.png]

**Figure 4.** Figure 4: A) Temporal evolution of the drain current as a function of 405 nm laser exposure time of various powers at a gate bias of 50 V for p-type photodoping. The red line is the case without laser exposure. The dashed lines are fitting curves of temporal evolution with the s…

**Figure 5.** Figure 5: Role of the SiO2 substrate in photodoping. Time-dependent evolution of the normalized threshold voltage shift (ΔVTh) under illumination for devices with and without the SiO2 substrate. The SiO2 layer was removed by wet etching for the control device. Triangular symbols…

**Figure 6.** Figure 6: Origin of asymmetric photodoping in WSe2/hBN/SiO2 heterostructures. (A) Vacuumlevel-aligned band diagram showing electron and hole trap states in SiO2 that can act as charge reservoirs for photodoping, including shallow and deep levels. (B) Schematic of the photodopin…

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

9 extracted references · 1 canonical work pages

[1]

K.; Novoselov, K

(1) Geim, A. K.; Novoselov, K. S. The Rise of Graphene. Nat. Mater. 2007, 6 (3), 183-191. (2) Ajayan, P.; Kim, P.; Banerjee, K. Two-dimensional van der Waals Materials. Phys. Today 2016, 69 (9), 38-44. (3) Novoselov, K. S.; Mishchenko, A.; Carvalho, A.; Castro Neto, A. H. 2D Materials and van der Waals Heterostructures. Science 2016, 353 (6298), aac9439. ...

2007
[2]

Tuning the Electrical Transport Properties of Multilayered Molybdenum Disulfide Nanosheets by Intercalating Phosphorus

(9) Ye, L.; Chen, S.; Li, W.; Pi, M.; Wu, T.; Zhang, D. Tuning the Electrical Transport Properties of Multilayered Molybdenum Disulfide Nanosheets by Intercalating Phosphorus. J. Phys. Chem. C 2015, 119 (17), 9560-9567. (10) Yun, S. J.; Duong, D. L.; Ha, D. M.; Singh, K.; Phan, T. L.; Choi, W.; Kim, Y . M.; Lee, Y . H. Ferromagnetic Oder at Room Temperatu...

2015
[3]

A.; Kiemle, J.; Sigger, F.; Klein, J.; Wong, E.; Barnard, E

(13) Mitterreiter, E.; Schuler, B.; Micevic, A.; Hernangómez -Pérez, D.; Barthelmi, K.; Cochrane, K. A.; Kiemle, J.; Sigger, F.; Klein, J.; Wong, E.; Barnard, E. S.; Watanabe, K.; Taniguchi, T.; Frank, M.; Jahnke, L.; Finley, J. J.; Schwartzberg, A.; Qiu, D. Y .; Refaely- Abramson, S.; Holleitner, A. W.; Weber-Bargioni, A.; Kastl, C. The role of chalcogen...

2021
[4]

Z.; Olejnik, J.; Debus, J.; Ho, C

(14) Żuberek, E. Z.; Olejnik, J.; Debus, J.; Ho, C. -H.; Watanabe, K.; Taniguchi, T.; Bryja, L.; Jadczak, J. Photon upconversion of defect -bound excitons in hBN -encapsulated MoS 2 monolayer. J. Phys. Chem. C 2024, 128, 19288–19296. (15) Guo, N. J.; Liu, W.; Li, Z. P.; Yang, Y . Z.; Yu, S.; Meng, Y .; Wang, Z. A.; Zeng, X. D.; Yan, F. F.; Li, Q.; et al. ...

2024
[5]

K.; Alsalman, H.; Azadani, J

(19) Pandey, S. K.; Alsalman, H.; Azadani, J. G.; Izquierdo, N.; Low, T.; Campbell, S. A. Controlled p-type Substitutional Doping in Large -area Monolayer WSe 2 Crystals Grown by Chemical Vapor Deposition. Nanoscale 2018, 10 (45), 21374-21385. (20) Fang, H.; Tosun, M.; Seol, G.; Chang, T. C.; Takei, K.; Guo, J.; Javey, A. Degenerate n - doping of Few-laye...

2018
[6]

2D MoO3-xSx/MoS2 van der Waals Asembly: a Tunable Heterojunction with Attractive Properties for Photocatalysis

(22) Shahrokhi, M.; Raybaud, P.; Le Bahers, T. 2D MoO3-xSx/MoS2 van der Waals Asembly: a Tunable Heterojunction with Attractive Properties for Photocatalysis. ACS Appl. Mater. Interfaces 2021, 13 (30), 36465-36474. (23) Ghosh, A.; Ball, B.; Pal, S.; Sarkar, P. Ultrafast Charge Transfer and Delayed Recombination in Graphitic -CN/WTe2 van der Waals Heterost...

2021
[7]

R.; Larson, D

(25) Arora, R.; Barr, A. R.; Larson, D. T.; Pizzochero, M.; Kaxiras, E. Engineering Interfacial Charge Transfer through Modulation Doping for 2D electronics. Phys. Rev. Mater. 2025, 9 (2), L021601. (26) Liu, H.; Yi, Z.; Chen, C. Advances in Photodetectors via Photogating Effect. Mater. Res. Bull. 2025, 192, 113628. (27) Ju, L.; Velasco, J., Jr.; Huang, E....

2025
[8]

Z.; Iqbal, M

(33) Aftab, S.; Iqbal, M. Z.; Iqbal, M. W. Programmable Photo‐induced Doping in 2D materials. Adv. Mater. Interfaces 2022, 9 (32), 2201209. (34) Tsai, M. -Y .; Huang, C.-T.; Lin, C. -Y .; Lee, M.-P.; Yang, F.-S.; Li, M.; Chang, Y . -M.; Watanabe, K.; Taniguchi, T.; Ho, C.-H.; et al. A Reconfigurable Transistor and Memory Based on a Two-dimensional Heteros...

2022

Show all 9 references

[9]

First principles study of oxygen vacancy defects in amorphous 25 SiO2, AIP Advances 2017, 7, 015309

(40) Yue, Y .; Song, Y .; Zuo, X. First principles study of oxygen vacancy defects in amorphous 25 SiO2, AIP Advances 2017, 7, 015309. (41) Watson, A. J.; Lu, W.; Guimarães, M. H. D.; Stöhr, M. Transfer of Large -scale Two- dimensional Semiconductors: Challenges and Developmen...

2017 doi

Pith tools

Reviewed July 12, 2026 · model on record in the stance chip above.

[1] [1]

K.; Novoselov, K

(1) Geim, A. K.; Novoselov, K. S. The Rise of Graphene. Nat. Mater. 2007, 6 (3), 183-191. (2) Ajayan, P.; Kim, P.; Banerjee, K. Two-dimensional van der Waals Materials. Phys. Today 2016, 69 (9), 38-44. (3) Novoselov, K. S.; Mishchenko, A.; Carvalho, A.; Castro Neto, A. H. 2D Materials and van der Waals Heterostructures. Science 2016, 353 (6298), aac9439. ...

2007

[2] [2]

Tuning the Electrical Transport Properties of Multilayered Molybdenum Disulfide Nanosheets by Intercalating Phosphorus

(9) Ye, L.; Chen, S.; Li, W.; Pi, M.; Wu, T.; Zhang, D. Tuning the Electrical Transport Properties of Multilayered Molybdenum Disulfide Nanosheets by Intercalating Phosphorus. J. Phys. Chem. C 2015, 119 (17), 9560-9567. (10) Yun, S. J.; Duong, D. L.; Ha, D. M.; Singh, K.; Phan, T. L.; Choi, W.; Kim, Y . M.; Lee, Y . H. Ferromagnetic Oder at Room Temperatu...

2015

[3] [3]

A.; Kiemle, J.; Sigger, F.; Klein, J.; Wong, E.; Barnard, E

(13) Mitterreiter, E.; Schuler, B.; Micevic, A.; Hernangómez -Pérez, D.; Barthelmi, K.; Cochrane, K. A.; Kiemle, J.; Sigger, F.; Klein, J.; Wong, E.; Barnard, E. S.; Watanabe, K.; Taniguchi, T.; Frank, M.; Jahnke, L.; Finley, J. J.; Schwartzberg, A.; Qiu, D. Y .; Refaely- Abramson, S.; Holleitner, A. W.; Weber-Bargioni, A.; Kastl, C. The role of chalcogen...

2021

[4] [4]

Z.; Olejnik, J.; Debus, J.; Ho, C

(14) Żuberek, E. Z.; Olejnik, J.; Debus, J.; Ho, C. -H.; Watanabe, K.; Taniguchi, T.; Bryja, L.; Jadczak, J. Photon upconversion of defect -bound excitons in hBN -encapsulated MoS 2 monolayer. J. Phys. Chem. C 2024, 128, 19288–19296. (15) Guo, N. J.; Liu, W.; Li, Z. P.; Yang, Y . Z.; Yu, S.; Meng, Y .; Wang, Z. A.; Zeng, X. D.; Yan, F. F.; Li, Q.; et al. ...

2024

[5] [5]

K.; Alsalman, H.; Azadani, J

(19) Pandey, S. K.; Alsalman, H.; Azadani, J. G.; Izquierdo, N.; Low, T.; Campbell, S. A. Controlled p-type Substitutional Doping in Large -area Monolayer WSe 2 Crystals Grown by Chemical Vapor Deposition. Nanoscale 2018, 10 (45), 21374-21385. (20) Fang, H.; Tosun, M.; Seol, G.; Chang, T. C.; Takei, K.; Guo, J.; Javey, A. Degenerate n - doping of Few-laye...

2018

[6] [6]

2D MoO3-xSx/MoS2 van der Waals Asembly: a Tunable Heterojunction with Attractive Properties for Photocatalysis

(22) Shahrokhi, M.; Raybaud, P.; Le Bahers, T. 2D MoO3-xSx/MoS2 van der Waals Asembly: a Tunable Heterojunction with Attractive Properties for Photocatalysis. ACS Appl. Mater. Interfaces 2021, 13 (30), 36465-36474. (23) Ghosh, A.; Ball, B.; Pal, S.; Sarkar, P. Ultrafast Charge Transfer and Delayed Recombination in Graphitic -CN/WTe2 van der Waals Heterost...

2021

[7] [7]

R.; Larson, D

(25) Arora, R.; Barr, A. R.; Larson, D. T.; Pizzochero, M.; Kaxiras, E. Engineering Interfacial Charge Transfer through Modulation Doping for 2D electronics. Phys. Rev. Mater. 2025, 9 (2), L021601. (26) Liu, H.; Yi, Z.; Chen, C. Advances in Photodetectors via Photogating Effect. Mater. Res. Bull. 2025, 192, 113628. (27) Ju, L.; Velasco, J., Jr.; Huang, E....

2025

[8] [8]

Z.; Iqbal, M

(33) Aftab, S.; Iqbal, M. Z.; Iqbal, M. W. Programmable Photo‐induced Doping in 2D materials. Adv. Mater. Interfaces 2022, 9 (32), 2201209. (34) Tsai, M. -Y .; Huang, C.-T.; Lin, C. -Y .; Lee, M.-P.; Yang, F.-S.; Li, M.; Chang, Y . -M.; Watanabe, K.; Taniguchi, T.; Ho, C.-H.; et al. A Reconfigurable Transistor and Memory Based on a Two-dimensional Heteros...

2022