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Paper Citation Record · LEDGER

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2

As of 18 August 2026, this Paper Citation Record lists 9 of 9 outbound references and 0 inbound Pith citation observations for arXiv:2607.03121.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2607.03121 v1

Coverage vector

measured 9 of 9 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-07-12T04:45:16.710568Z

measured 9 of 9 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-17T06:30:58.91139+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

9 of 9 outbound references displayed

  • verified exact1
  • verified fuzzy0
  • unresolved8
  • parse uncertain0
  • malformed identifier0
  • metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 0f064dcb-5931-438c-a66d-7e16ed9a33cf · outbound

This paper cites K.; Novoselov, K.

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2 K.; Novoselov, K

Reference 1

Resolution
unresolved
no resolver link, observed 2026-07-12T04:45:16.710568Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-07-12T04:45:16.710568Z digest=sha256:7dade5670fd4f05b711cd902fd2a6c1d252747f8720050e720b18b3aa84211cf

Observation bb924893-eb79-4ad4-900a-713c565d7814 · outbound

This paper cites Tuning the Electrical Transport Properties of Multilayered Molybdenum Disulfide Nanosheets by Intercalating Phosphorus.

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2 Tuning the Electrical Transport Properties of Multilayered Molybdenum Disulfide Nanosheets by Intercalating Phosphorus

Reference 2

Resolution
unresolved
no resolver link, observed 2026-07-12T04:45:16.710568Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-07-12T04:45:16.710568Z digest=sha256:973a3d5eb9f9f088705b93ca5961452ca5f37bbf4aded9cc4825da6b601e2826

Observation 32f0a415-c352-4787-9d0e-357034cecc8e · outbound

This paper cites A.; Kiemle, J.; Sigger, F.; Klein, J.; Wong, E.; Barnard, E.

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2 A.; Kiemle, J.; Sigger, F.; Klein, J.; Wong, E.; Barnard, E

Reference 3

Resolution
unresolved
no resolver link, observed 2026-07-12T04:45:16.710568Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-07-12T04:45:16.710568Z digest=sha256:a31596a769abc1bb8a18f69697a58e40fd84478d10a9e5130827c8e3276d3fc0

Observation 4e6a9697-75a5-4faa-a305-8fdacdc29a52 · outbound

This paper cites Z.; Olejnik, J.; Debus, J.; Ho, C.

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2 Z.; Olejnik, J.; Debus, J.; Ho, C

Reference 4

Resolution
unresolved
no resolver link, observed 2026-07-12T04:45:16.710568Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-07-12T04:45:16.710568Z digest=sha256:b95144945933fb5c189e594bcae62269137bf84b919ed1ffeb6701d40dd1ab39

Observation cb948ff7-e08d-4376-9dcb-c36a95f65250 · outbound

This paper cites K.; Alsalman, H.; Azadani, J.

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2 K.; Alsalman, H.; Azadani, J

Reference 5

Resolution
unresolved
no resolver link, observed 2026-07-12T04:45:16.710568Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-07-12T04:45:16.710568Z digest=sha256:eecfc32c52e924bb6dbd40e2f1eab56818b7ed9f8495bb9a9a27df3c1eafdaf3

Observation 990a25ae-4f80-4aa8-b579-ecc52b5d4b20 · outbound

This paper cites 2D MoO3-xSx/MoS2 van der Waals Asembly: a Tunable Heterojunction with Attractive Properties for Photocatalysis.

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2 2D MoO3-xSx/MoS2 van der Waals Asembly: a Tunable Heterojunction with Attractive Properties for Photocatalysis

Reference 6

Resolution
unresolved
no resolver link, observed 2026-07-12T04:45:16.710568Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-07-12T04:45:16.710568Z digest=sha256:14cc740bf4a599ac25221728d30432680f2f4be36a013a445b6c7f37a665ee9b

Observation d339abbb-dbc7-4292-bb9f-bae4534145c7 · outbound

This paper cites R.; Larson, D.

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2 R.; Larson, D

Reference 7

Resolution
unresolved
no resolver link, observed 2026-07-12T04:45:16.710568Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-07-12T04:45:16.710568Z digest=sha256:fcd1a71cc6c0950d68a11e31527bfd68d10d8113ff30486da16135b83d3c6ed5

Observation c3064ab6-2c08-4ed1-bc05-84b2de4b1283 · outbound

This paper cites Z.; Iqbal, M.

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2 Z.; Iqbal, M

Reference 8

Resolution
unresolved
no resolver link, observed 2026-07-12T04:45:16.710568Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-07-12T04:45:16.710568Z digest=sha256:c939056b538c318ac20eb20551a11acc81af6e0ad35e3d0827b85f024043adcf

Observation d2172849-eda1-4020-b757-11a3fae08bc6 · outbound

This paper cites First principles study of oxygen vacancy defects in amorphous 25 SiO2, AIP Advances 2017, 7, 015309.

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2 First principles study of oxygen vacancy defects in amorphous 25 SiO2, AIP Advances 2017, 7, 015309

Reference 9

Resolution
verified exact
doi, observed 2026-07-12T04:48:28.867537Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

source=pdf_text observed=2026-07-12T04:45:16.710568Z digest=sha256:93a2563f18f8c3b08e522c8e1fe6c5f0db8a6418758db178bf5ece7116611ab8

Pith citing papers

No inbound Pith citation observations are available.