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Single-sided surface chemistry turns antiferromagnetic monolayer FeSe into a d-wave altermagnet whose tunnel junctions reach 1870% magnetoresistance.

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2026-07-11 23:05 UTC pith:VQHLNFGA

load-bearing objection Clean DFT+NEGF demonstration that single-sided H/O/F on FeSe can turn a conventional 2D AFM into a d-wave AM and produce giant simulated TMR; the device numbers rest on untested magnetic-order and switchability assumptions. the 3 major comments →

arxiv 2607.03908 v1 pith:VQHLNFGA submitted 2026-07-04 cond-mat.mtrl-sci

Surface Functionalization Enables Two-Dimensional Altermagnetism and Giant Tunnel Magnetoresistance

Zhou Cui , Ziye Zhu , Bowen Hao , Xunkai Duan , Xuan Zhou , Yali Xie , Huali Yang , Baisheng Sa
show 2 more authors
Runwei Li Tong Zhou
This is my paper
classification cond-mat.mtrl-sci
keywords altermagnetismtwo-dimensional materialssurface functionalizationFeSe monolayertunnel magnetoresistancespin filteringsymmetry engineeringmagnetic tunnel junction
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

Practical two-dimensional altermagnets are scarce, yet they are wanted for spintronics that need zero net magnetization, momentum-dependent spin polarization, and atomic-scale device integration. This paper argues that one does not have to wait for new intrinsic materials: known two-dimensional antiferromagnets can be converted into altermagnets by single-sided surface functionalization. The functional groups break inversion and out-of-plane mirror symmetries that force spin degeneracy, while leaving intact the crystal-rotation symmetries that lock opposite-spin sublattices together. First-principles calculations on monolayer FeSe show that hydrogenation, oxidation, or fluorination produce a clear d-wave altermagnetic band structure. Vertical tunnel junctions built from the hydrogenated layers then display giant tunnel magnetoresistance of order 1870 percent, because parallel and antiparallel Néel-vector alignments open or close momentum-selective spin-filtering channels. Surface chemistry therefore becomes both the switch that creates the altermagnet and the control knob that tunes its transport.

Core claim

Single-sided hydrogenation, oxidation, or fluorination converts spin-degenerate antiferromagnetic monolayer FeSe into a d-wave altermagnet with pronounced momentum-dependent spin splitting; Au/Fe2Se2H/GeF4/Fe2Se2H/Au magnetic tunnel junctions then exhibit tunnel magnetoresistance up to 1.87 imes10^{3} percent that arises from momentum-selective spin filtering between parallel and antiparallel Néel-vector configurations.

What carries the argument

Symmetry-guided single-sided surface functionalization: it removes inversion and out-of-plane mirror symmetries that enforce spin degeneracy while preserving the rotation symmetry that connects opposite-spin sublattices, thereby converting a conventional antiferromagnet into an altermagnet whose spin-filtering can be read out in a tunnel junction.

Load-bearing premise

That single-sided functionalization of monolayer FeSe remains chemically and magnetically stable, keeps the required collinear order and rotation symmetry, and can be built into a vertical tunnel junction with independently switchable Néel vectors.

What would settle it

Synthesize single-sided hydrogenated or oxidized monolayer FeSe, measure its spin-resolved band structure or anomalous Hall response for the predicted d-wave splitting, and fabricate a vertical Fe2Se2H/GeF4/Fe2Se2H junction whose magnetoresistance changes by orders of magnitude when the relative Néel-vector orientation is reversed.

Watch this falsifier. Get emailed when new claim-graph text bears on it.

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If this is right

  • Many existing two-dimensional antiferromagnets become candidate altermagnets once single-sided functionalization is applied.
  • Altermagnetic tunnel junctions can be designed with chemically set rather than only field-set spin-filtering efficiency.
  • Functionalization geometry (which side, which adsorbate) supplies an extra design axis for TMR magnitude and anisotropy.
  • The same chemical switch can simultaneously host altermagnetism and topological edge states, enabling combined spin-filter and topological transport devices.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • If the chemical conversion works for FeSe, analogous single-sided adsorption on other buckled or distorted antiferromagnetic monolayers should yield a broader library of two-dimensional altermagnets without requiring new crystal discovery.
  • Device yield will hinge less on stacking angle or external fields and more on controllable, large-area surface chemistry—shifting process development toward plasma or chemical vapor functionalization protocols.
  • The giant TMR predicted here suggests that altermagnetic MRAM cells could operate with lower write energy once Néel-vector switching methods mature.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript proposes single-sided surface functionalization as a nonvolatile chemical route to convert 2D antiferromagnets into altermagnets by breaking inversion and out-of-plane mirror symmetries while retaining the rotation that connects opposite-spin sublattices. Using monolayer FeSe as a platform, DFT calculations show that hydrogenation, oxidation, and fluorination produce d-wave altermagnetic spin splitting (magnetic space group P4'm'm for Fe2Se2H), with additional Weyl-related topological features under SOC. NEGF transport simulations of Au/Fe2Se2H/GeF4/Fe2Se2H/Au junctions then report giant TMR up to 1.87 imes10^3% from momentum-selective spin filtering between parallel and antiparallel Néel-vector configurations, with strong dependence on functionalization geometry at the barrier interfaces.

Significance. If the magnetic ground state and switchability assumptions hold, the work supplies a chemically practical, symmetry-guided alternative to field- or stacking-based AFM-to-AM conversion and a concrete device-level prediction of large TMR in a 2D altermagnetic tunnel junction. The symmetry design principle is clearly stated, the computed spin-split bands and k||-resolved transmission maps give a coherent microscopic picture of the TMR, and the geometry-dependent TMR comparison (Fig. 4) is a useful control that ties surface chemistry to transport. These elements make the paper of interest for 2D altermagnetism and spintronics, even though the claims remain computational.

major comments (3)
  1. The giant-TMR claim (abstract; Fig. 3; TMR definition after Eq. (2)) presupposes that single-sided functionalization preserves collinear AFM order with opposite-spin Fe sublattices still related by the C4-type rotation (P4'm'm). The manuscript shows spin densities (Fig. 2d) and phonon stability (Fig. S2) for free-standing Fe2Se2H/O/F, but does not report total-energy comparisons of alternative magnetic orders (FM, noncollinear, or moments induced on H/O/F) nor recompute the magnetic ground state after contact with Au or GeF4. Without that evidence, both the d-wave AM bands and the PC/APC contrast remain conditional.
  2. Device models in Figs. 3–4 treat the two Fe2Se2H layers as independently set into parallel versus antiparallel Néel configurations. Because the layers are compensated (no net magnetization), the paper should discuss how pinning and free-layer switching would be realized, or at least state this as an explicit modeling assumption and note the experimental gap. Otherwise the TMR ratio is a theoretical upper bound under an untested switchability premise rather than a demonstrated device response.
  3. Calculation methods fix U_eff = 0.8 eV on Fe d states and report results for that single value. Given that the Hubbard U is a free parameter that can shift Fe moments and the size of the momentum-dependent spin splitting that drives the TMR, a brief U-sensitivity check (or justification that the AFM ground state and qualitative spin filtering survive a reasonable U range) is needed to support the quantitative 1.87 imes10^3% claim.
minor comments (5)
  1. Abstract and main text use both “1.87×10^3%” and “1872%” for the same TMR; standardize the presentation.
  2. Fig. 3(c) k||-resolved maps would benefit from a shared color scale and explicit labeling of the high-transmission sectors that are said to match/mismatch between PC and APC.
  3. Clarify whether GeF4 is chosen for lattice match, band alignment, or experimental accessibility; a short justification would help readers assess the junction model.
  4. Minor typos and wording: “ad-wave AM”, “N ´eel”, and “suggest broadly applicable route” should be cleaned up in proof.
  5. The topological Weyl/spin-Hall discussion (Figs. 2f,h and S3) is interesting but secondary to the TMR claim; either integrate it more tightly into the device narrative or mark it clearly as an additional electronic-structure feature.

Circularity Check

0 steps flagged

No circularity: AFM-to-AM transition and giant TMR are independent DFT/NEGF outputs, not algebraic rearrangements or fitted targets renamed as predictions.

full rationale

The paper's load-bearing chain is (i) a symmetry criterion (break I and Mz, keep R connecting opposite-spin sublattices), (ii) DFT band structures and spin densities for functionalized FeSe (Fe2Se2H/O/F), and (iii) NEGF transmissions for PC vs APC Néel configurations that enter the standard TMR formula TMR=(TPC−TAPC)/TAPC. None of these steps reduces by construction to its inputs: spin splitting is not a free parameter equal to the claimed splitting; TMR is not fitted to a related observable and then re-reported as a prediction; and the magnetic space group P4′m′m and d-wave character are outputs of the electronic-structure calculation under stated DFT settings (GGA+U, U=0.8 eV from literature), not definitions of the target. Self-citations to related altermagnet/multiferroic work by overlapping authors appear only as background context and do not supply a uniqueness theorem or ansatz that forces the FeSe functionalization or TMR results. Experimental premises (stability of collinear AFM order after functionalization, independent Néel switching in the stack) are validity risks, not circularity. The derivation is therefore self-contained computational work with no circular reduction.

Axiom & Free-Parameter Ledger

2 free parameters · 4 axioms · 0 invented entities

The central claim rests on standard DFT/NEGF practice plus a few material-specific modeling choices (especially Hubbard U and assumed single-sided adsorbate geometry). No new particles or forces are invented; altermagnetism is taken from the literature. Free parameters are few but load-bearing for magnetism and transport near EF.

free parameters (2)
  • Hubbard U_eff on Fe d electrons = 0.8 eV
    GGA+U with U=0.8 eV is chosen following prior FeSe monolayer work; magnetic order, band positions, and spin splitting near EF can depend on this value.
  • Functionalization coverage and adsorption geometry = single-sided Fe2Se2X models; four H interface configs
    Single-sided H/O/F models (and four interface H arrangements in Fig. 4) are constructed by hand; TMR varies strongly with these choices, so geometry is an effective control parameter of the claimed device response.
axioms (4)
  • domain assumption Opposite-spin sublattices related by rotation R (not pure translation or inversion) produce altermagnetic momentum-dependent spin splitting in collinear magnets.
    Design principle section and Fig. 1; taken from the altermagnetism literature (Šmejkal et al. and related citations).
  • domain assumption Monolayer FeSe hosts a collinear AFM ground state with spin degeneracy enforced by I and Mz before functionalization.
    Stated with citations to prior theory; used as the starting platform for the AFM-to-AM conversion.
  • domain assumption DFT (PBE+U, PAW) and NEGF-LCAO transport adequately capture spin-split bands and zero-bias tunneling TMR of the model junctions.
    Calculation methods; standard condensed-matter modeling assumption without experimental cross-check here.
  • ad hoc to paper Néel vectors of the two functionalized layers can be set independently into parallel and antiparallel configurations for TMR readout.
    Device section and Fig. 3 PC/APC protocol; required for the giant-TMR claim but not demonstrated experimentally or with switching energetics.

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Cite this review

Pith. "Pith review of Surface Functionalization Enables Two-Dimensional Altermagnetism and Giant Tunnel Magnetoresistance." pith.science (2026). https://pith.science/paper/VQHLNFGA

@misc{pith2026260703908,
  author       = {Pith},
  title        = {Pith review of: Surface Functionalization Enables Two-Dimensional Altermagnetism and Giant Tunnel Magnetoresistance},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/VQHLNFGA}},
  note         = {Machine review of arXiv:2607.03908}
}
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read the original abstract

Two-dimensional (2D) altermagnets (AMs) are highly desirable for ultrafast, stray-field-free spintronics because they combine compensated magnetic order and momentum-dependent spin splitting with the scalability, tunability, and interface compatibility of atomically thin materials. However, practical 2D AMs remain scarce. Rather than relying solely on the search for intrinsic 2D AMs, an appealing route is to transform known 2D antiferromagnets (AFMs) into AMs through symmetry engineering. Here, we propose surface functionalization as a symmetry-guided, nonvolatile chemical switch for realizing this AFM-to-AM transformation. By breaking inversion and out-of-plane mirror symmetries while preserving the rotation symmetry connecting opposite-spin sublattices, single-sided functionalization lifts spin degeneracy and induces altermagnetic spin splitting. Using monolayer FeSe as a representative platform, first-principles calculations show that hydrogenation, oxidation, and fluorination convert spin-degenerate antiferromagnetic FeSe into a d-wave AM with pronounced momentum-dependent spin splitting. At the device level, our transport simulations reveal that the functionalized FeSe monolayer magnetic tunnel junctions exhibit giant tunnel magnetoresistance (TMR) up to $1.87\times10^3\%$, originating from momentum-selective spin filtering between parallel and antiparallel N\'eel-vector configurations. The strong dependence of TMR on functionalization geometry further demonstrates that surface chemistry provides an effective control knob for altermagnetic transport. Our work establishes a symmetry-to-chemistry-to-device strategy for engineering 2D AMs and developing high-performance altermagnetic spintronic devices.

Figures

Figures reproduced from arXiv: 2607.03908 by Baisheng Sa, Bowen Hao, Huali Yang, Runwei Li, Tong Zhou, Xuan Zhou, Xunkai Duan, Yali Xie, Zhou Cui, Ziye Zhu.

Figure 1
Figure 1. Figure 1: FIG. 1. Design principle of the surface-functionalization-induced [PITH_FULL_IMAGE:figures/full_fig_p001_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2. Crystal structures of (a) FeSe and (b) the surface functionalization Fe [PITH_FULL_IMAGE:figures/full_fig_p002_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3. The spin-dependent transport properties of the [PITH_FULL_IMAGE:figures/full_fig_p003_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4. Surface functionalization-controlled tuning of TMR in [PITH_FULL_IMAGE:figures/full_fig_p004_4.png] view at source ↗

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Forward citations

Cited by 2 Pith papers

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    Hole-doped, single-side Cl-adsorbed monolayer FeSe is predicted to host a robust d-wave altermagnetic state with up to 620 meV spin splitting.

Reference graph

Works this paper leans on

72 extracted references · 5 linked inside Pith · cited by 2 Pith papers

  1. [1]

    C. Wu, K. Sun, E. Fradkin, and S.-C. Zhang, Fermi liquid in- stabilities in the spin channel, Phys. Rev. B75, 115103 (2007)

    2007

  2. [2]

    Hayami, Y

    S. Hayami, Y . Yanagi, and H. Kusunose, Momentum-dependent spin splitting by collinear antiferromagnetic ordering, J. Phys. Soc. Jpn.88, 123702 (2019)

    2019

  3. [3]

    ˇSmejkal, R

    L. ˇSmejkal, R. Gonz ´alez-Hern´andez, T. Jungwirth, and J. Sinova, Crystal time-reversal symmetry breaking and spon- taneous hall effect in collinear antiferromagnets, Sci. Adv.6, eaaz8809 (2020)

    2020

  4. [4]

    L.-D. Yuan, Z. Wang, J.-W. Luo, E. I. Rashba, and A. Zunger, Giant momentum-dependent spin splitting in centrosymmetric low-Z antiferromagnets, Phys. Rev. B102, 014422 (2020)

    2020

  5. [5]

    I. I. Mazin, K. Koepernik, M. D. Johannes, R. Gonz ´alez- Hern´andez, and L. ˇSmejkal, Prediction of unconventional magnetism in doped FeSb 2, Proc. Natl. Acad. Sci.118, e2108924118 (2021)

    2021

  6. [6]

    L. Yuan, Z. Wang, J. Luo, and A. Zunger, Prediction of low-Z collinear and noncollinear antiferromagnetic compounds hav- ing momentum-dependent spin splitting even without spin-orbit coupling, Phys. Rev. Mater.5, 014409 (2021). 6

    2021

  7. [7]

    H. Ma, M. Hu, N. Li, J. Liu, W. Yao, J. Jia, and J. Liu, Mul- tifunctional antiferromagnetic materials with giant piezomag- netism and noncollinear spin current, Nat. Commun.12, 2846 (2021)

    2021

  8. [8]

    Q. Liu, X. Dai, and S. Bl¨ugel, Different facets of unconventional magnetism, Nat. Phys.21, 329 (2025)

    2025

  9. [9]

    ˇSmejkal, J

    L. ˇSmejkal, J. Sinova, and T. Jungwirth, Beyond conventional ferromagnetism and antiferromagnetism: A phase with nonrel- ativistic spin and crystal rotation symmetry, Phys. Rev. X12, 031042 (2022)

    2022

  10. [10]

    ˇSmejkal, J

    L. ˇSmejkal, J. Sinova, and T. Jungwirth, Emerging research landscape of altermagnetism, Phys. Rev. X12, 040501 (2022)

    2022

  11. [11]

    L. Bai, W. Feng, S. Liu, L. ˇSmejkal, Y . Mokrousov, and Y . Yao, Altermagnetism: Exploring new frontiers in magnetism and spintronics, Adv. Funct. Mater.34, 2409327 (2024)

    2024

  12. [12]

    C. Song, H. Bai, Z. Zhou, L. Han, H. Reichlova, J. H. Dil, J. Liu, X. Chen, and F. Pan, Altermagnets as a new class of functional materials, Nat. Rev. Mater.10, 473 (2025)

    2025

  13. [13]

    Bhowal and A

    S. Bhowal and A. Bose, Non-relativistic spin splitting: Features and functionalities, arXiv:2510.20306 (2025)

    arXiv 2025

  14. [14]

    Jungwirth, J

    T. Jungwirth, J. Sinova, R. M. Fernandes, Q. Liu, H. Watan- abe, S. Murakami, S. Nakatsuji, and L.ˇSmejkal, Symmetry, mi- croscopy and spectroscopy signatures of altermagnetism, Na- ture649, 837 (2026)

    2026

  15. [15]

    Gurung, M

    G. Gurung, M. Elekhtiar, Q.-Q. Luo, D.-F. Shao, and E. Y . Tsymbal, Nearly perfect spin polarization of noncollinear an- tiferromagnets, Nat. Commun.15, 10242 (2024)

    2024

  16. [16]

    B. Chi, L. Jiang, Y . Zhu, G. Yu, C. Wan, and X. Han, Anisotropic spin filtering by an altermagnetic barrier in mag- netic tunnel junctions, Phys. Rev. Appl.23, 014013 (2025)

    2025

  17. [17]

    Samanta, D.-F

    K. Samanta, D.-F. Shao, and E. Y . Tsymbal, Spin filtering with insulating altermagnets, Nano Lett.25, 3150 (2025)

    2025

  18. [18]

    R. D. Gonzalez Betancourt, J. Zub ´aˇc, R. Gonzalez-Hernandez, K. Geishendorf, Z. ˇSob´aˇn, G. Springholz, K. Olejn ´ık, L. ˇSmejkal, J. Sinova, T. Jungwirth, S. T. B. Goennenwein, A. Thomas, H. Reichlov ´a, J. ˇZelezn´y, and D. Kriegner, Spon- taneous anomalous hall effect arising from an unconventional compensated magnetic phase in a semiconductor, Phys...

    2023

  19. [19]

    Z. Zhou, X. Cheng, M. Hu, R. Chu, H. Bai, L. Han, J. Liu, F. Pan, and C. Song, Manipulation of the altermagnetic order in CrSb via crystal symmetry, Nature638, 645 (2025)

    2025

  20. [20]

    X. Duan, J. Zhang, Z. Zhu, Y . Liu, Z. Zhang, I. ˇZuti´c, and T. Zhou, Antiferroelectric altermagnets: Antiferroelectricity al- ters magnets, Phys. Rev. Lett.134, 106801 (2025)

    2025

  21. [21]

    Z. Zhu, X. Duan, J. Zhang, B. Hao, I. ˇZuti´c, and T. Zhou, Two- dimensional ferroelectric altermagnets: From model to material realization, Nano Lett.25, 9456 (2025)

    2025

  22. [22]

    Z. Zhu, Y . Liu, X. Duan, J. Zhang, B. Hao, S.-H. Wei, I. ˇZuti´c, and T. Zhou, Emergent multiferroic altermagnets and spin con- trol via noncollinear molecular polarization, Sci. China Phys. Mech. Astron.68, 127562 (2025)

    2025

  23. [23]

    M. Gu, Y . Liu, H. Zhu, K. Yananose, X. Chen, Y . Hu, A. Stroppa, and Q. Liu, Ferroelectric switchable altermag- netism, Phys. Rev. Lett.134, 106802 (2025)

    2025

  24. [24]

    W. Sun, C. Yang, W. Wang, Y . Liu, X. Wang, S. Huang, and Z. Cheng, Proposing altermagnetic-ferroelectric type-III multi- ferroics with robust magnetoelectric coupling, Adv. Mater.37, 2502575 (2025)

    2025

  25. [25]

    R. Cao, R. Dong, R. Fei, and Y . Yao, Designing spin-driven multiferroics in altermagnets, arXiv:2412.20347 (2024)

    Pith/arXiv arXiv 2024

  26. [26]

    W.-T. Guo, J. Xu, Y . Yang, H. Zhang, and H. Wang, Altermag- netic type-II multiferroics with n´eel-order-locked electric polar- ization, arXiv:2505.01964 (2026)

    Pith/arXiv arXiv 2026

  27. [27]

    A. Urru, D. Seleznev, Y . Teng, S. Y . Park, S. E. Reyes-Lillo, and K. M. Rabe,G-type antiferromagnetic BiFeO 3 is a multiferroic g-wave altermagnet, Phys. Rev. B112, 104411 (2025)

    2025

  28. [28]

    R. Peng, S. Fang, P. Ho, F. Liu, T. Zhou, J. Liu, and Y . S. Ang, Ferroelastic altermagnetism, npj Quantum Mater.11, 5 (2026)

    2026

  29. [29]

    Z. Cui, Z. Zhu, X. Duan, B. Hao, X. Chen, J. Zhang, and T. Zhou, Symmetry-driven unconventional magnetoelec- tric coupling in perovskite altermagnets: From bulk to the two- dimensional limit, Adv. Sci.n/a, e00004 (2026)

    2026

  30. [30]

    Huang, C

    Y . Huang, C. Hua, R. Xu, J. Liu, Y . Zheng, and Y . Lu, Spin in- version enforced by crystal symmetry in ferroelastic altermag- nets, Phys. Rev. Lett.135, 266701 (2025)

    2025

  31. [31]

    N. Ding, H. Ye, S.-S. Wang, and S. Dong, Ferroelastically tun- able altermagnets, Phys. Rev. B112, L220410 (2025)

    2025

  32. [32]

    H. Yu, J. Ji, W. Luo, X. Gong, and H. Xiang, Recent advances in unconventional ferroelectrics and multiferroics, Adv. Mater. n/a, e07070 (2025)

    2025

  33. [33]

    Guo, Z.-X

    P.-J. Guo, Z.-X. Liu, and Z.-Y . Lu, Quantum anomalous Hall effect in collinear antiferromagnetism, npj Comput. Mater.9, 70 (2023)

    2023

  34. [34]

    Ma and J.-F

    H.-Y . Ma and J.-F. Jia, Altermagnetic topological insulator and the selection rules, Phys. Rev. B110, 064426 (2024)

    2024

  35. [35]

    Feng, C.-Y

    P. Feng, C.-Y . Tan, M. Gao, X.-W. Yan, Z.-X. Liu, P.-J. Guo, F. Ma, and Z.-Y . Lu, Type-II quantum spin Hall insulator, arXiv:2503.13397 (2025)

    Pith/arXiv arXiv 2025

  36. [36]

    Zhang, C

    R.-W. Zhang, C. Cui, Y . Wang, J. Duan, Z.-M. Yu, and Y . Yao, Quantized spin-hall conductivity in altermagnet Fe 2Te2O with mirror-spin coupling, arXiv:2503.10681 (2025)

    Pith/arXiv arXiv 2025

  37. [37]

    X. Chen, J. Zhang, B. Hao, J. Qian, Z. Zhu, I. ˇZuti´c, Z. Zhang, and T. Zhou, Altermagnets enable gate-switchable helical and chiral topological transport with spin-valley-momentum-locked dual protection, arXiv:2603.06487 (2026)

    arXiv 2026

  38. [38]

    Huang, Y

    R. Huang, Y . Hu, X. Chen, P. Yu, S. Tan, I. Zutic, and T. Zhou, Towards scalable braiding: Topological superconductivity un- locked under arbitrary magnetic field directions in curved pla- nar josephson junctions, arXiv:2504.20031 (2026)

    arXiv 2026

  39. [39]

    Z. Zhu, R. Huang, X. Chen, Z. Cui, X. Duan, J. Zhang, I. ˇZuti´c, and T. Zhou, Altermagnetic proximity effect, Phys. Rev. Lett. 136, 186702 (2026)

    2026

  40. [40]

    L.-S. Liu, K. Shao, H.-D. Li, X. Wan, W. Chen, and D. Y . Xing, Altermagnetic spin precession and spin transistor, Phys. Rev. Lett.136, 106301 (2026)

    2026

  41. [41]

    Z. Zhu, X. Chen, X. Duan, Z. Cui, J. Zhang, I. ˇZuti´c, and T. Zhou, Altermagnetoelectric spin field effect transistor, arXiv:2512.02974 (2025)

    arXiv 2025

  42. [42]

    K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Cas- tro Neto, 2d materials and van der Waals heterostructures, Sci- ence353, aac9439 (2016)

    2016

  43. [43]

    R. Xu, Y . Gao, and J. Liu, Chemical design of monolayer alter- magnets, arXiv:2505.15484 (2025)

    arXiv 2025

  44. [44]

    X. Chen, Y . Liu, P. Liu, Y . Yu, J. Ren, J. Li, A. Zhang, and Q. Liu, Unconventional magnons in collinear magnets dictated by spin space groups, Nature640, 349 (2025)

    2025

  45. [45]

    X. Wan, S. Mandal, Y . Guo, and K. Haule, High-throughput search for metallic altermagnets by embedded dynamical mean field theory, Phys. Rev. Lett.135, 106501 (2025)

    2025

  46. [46]

    Z.-F. Gao, S. Qu, B. Zeng, Y . Liu, J.-R. Wen, H. Sun, P.-J. Guo, and Z.-Y . Lu, AI-accelerated discovery of altermagnetic materials, Natl. Sci. Rev.12, nwaf066 (2025)

    2025

  47. [47]

    Mazin, R

    I. Mazin, R. Gonz ´alez-Hern´andez, and L. ˇSmejkal, In- duced Monolayer Altermagnetism in MnP(S,Se) 3 and FeSe, arXiv:2309.02355 (2023)

    Pith/arXiv arXiv 2023

  48. [48]

    Zeng and Y .-J

    S. Zeng and Y .-J. Zhao, Bilayer stacking A-type altermagnet: A general approach to generating two-dimensional altermag- 7 netism, Phys. Rev. B110, 174410 (2024)

    2024

  49. [49]

    Y . Liu, J. Yu, and C.-C. Liu, Twisted magnetic van der waals bilayers: an ideal platform for altermagnetism, Phys. Rev. Lett. 133, 206702 (2024)

    2024

  50. [50]

    X. Du, L. Wang, Y . Chen, H. Zhang, J. Li, and W. Zhao, Engi- neering symmetry breaking in 2D layered materials, Nat. Rev. Phys.3, 123 (2021)

    2021

  51. [51]

    Brill, L

    T. Brill, L. M ¨uller, A. Schmidt, and M. Hoffmann, Molecular functionalization of 2D materials, J. Mater. Chem. C9, 3456 (2021)

    2021

  52. [52]

    Barnowsky, F

    S. Barnowsky, F. Hoffmann, T. Meier, K. Schneider, and M. Schulz, Magnetic state control of non-van der waals 2D ma- terials by hydrogenation, ACS Nano18, 13456 (2024)

    2024

  53. [53]

    Albino, M

    L. Albino, M. Rossi, E. Bianchi, P. Conti, and D. Galli, The chimera of 2D- and 1D-graphene magnetization by hydrogena- tion or fluorination, Nanoscale16, 5567 (2024)

    2024

  54. [54]

    Zhang, X

    W. Zhang, X. Li, Q. Chen, M. Xu, and L. Wang, Oxidation- induced electronic and structural modification of graphene and 2D materials, Adv. Mater.31, 1901825 (2019)

    2019

  55. [55]

    C. Song, H. Liu, J. Zhang, W. Li, and M. Xu, Surface- functionalization induced spintronic and photocatalytic features in group-III monochalcogenide monolayers, Appl. Surf. Sci. 621, 155405 (2023)

    2023

  56. [56]

    Garrido, A

    M. Garrido, A. Naranjo, and E. M. P ´erez, Characterization of emerging 2D materials after chemical functionalization, Chem. Sci.15, 3428 (2024)

    2024

  57. [57]

    Sovizi, S

    S. Sovizi, S. Angizi, S. A. A. Alem, R. Goodarzi, M. R. Rah- mani Taji Boyuk, H. Ghanbari, R. Szoszkiewicz, A. Simchi, and P. Kruse, Plasma processing and treatment of 2D transition metal dichalcogenides: Tuning properties and defect engineer- ing, Chem. Rev.123, 13869 (2023)

    2023

  58. [58]

    Z. Wei, S. Qin, C. Ding,et al., Identifying s-wave pairing symmetry in single-layer FeSe from topologically trivial edge states, Nat. Commun.14, 5302 (2023)

    2023

  59. [59]

    R. Shi, Q. Li, X. Xu, B. Han, R. Zhu, F. Liu, R. Qi, X. Zhang, J. Du, J. Chen, D. Yu, X. Zhu, J. Guo, and P. Gao, Atomic-scale observation of localized phonons at FeSe/SrTiO3 interface, Nat. Commun.15, 3418 (2024)

    2024

  60. [60]

    J. Li, S. Li, K. Liu, X. Li, L. Nie, D. Zhao, M. Shi, T. Wu, and X. Chen, Pressure-dependent orbital-selective nematicity in FeSe, npj Quantum Mater.10, 105 (2025)

    2025

  61. [61]

    Z. F. Wang, H. Zhang, D. Liu, C. Liu, C. Tang, C. Song, Y . Zhong, J. Peng, F. Li, C. Nie, L. Wang, X. J. Zhou, X. Ma, Q. K. Xue, and F. Liu, Topological edge states in a high-temperature superconductor FeSe/SrTiO 3(001) film, Nat. Mater.15, 968 (2016)

    2016

  62. [62]

    Ge, Z.-L

    J.-F. Ge, Z.-L. Liu, C. Liu, C.-L. Gao, D. Qian, Q.-K. Xue, Y . Liu, and J.-F. Jia, Superconductivity above 100 K in single- layer FeSe films on doped SrTiO3, Nat. Mater.14, 285 (2015)

    2015

  63. [63]

    A. Luo, Z. Song, and G. Xu, Fragile topological band in the checkerboard antiferromagnetic monolayer FeSe, npj Comput. Mater.8, 26 (2022)

    2022

  64. [64]

    Gonz ´alez-Garc´ıa, W

    A. Gonz ´alez-Garc´ıa, W. L´opez-P´erez, P. Pacheco, L. Ram´ırez- Montes, and R. Gonz ´alez-Hern´andez, Coexistence ofd-wave altermagnetism and topological states in janus FeSeX(X=S, Te) monolayers, Phys. Rev. Mater.10, 044004 (2026)

    2026

  65. [65]

    Shao, S.-H

    D.-F. Shao, S.-H. Zhang, M. Li, C.-B. Eom, and E. Y . Tsymbal, Spin-neutral currents for spintronics, Nat. Commun.12, 7061 (2021)

    2021

  66. [66]

    Y . Shi, G. Zhan, L. Xu, K. Luo, J. Liu, Z. Wu, and H. Liu, Spin- dependent transport in altermagnet CrSb-based magnetic tunnel junction, Appl. Phys. Lett.127, 182409 (2025)

    2025

  67. [67]

    Q. Cui, Y . Zhu, X. Yao, P. Cui, and H. Yang, Giant spin- hall and tunneling magnetoresistance effects based on a two- dimensional nonrelativistic antiferromagnetic metal, Phys. Rev. B108, 024410 (2023)

    2023

  68. [68]

    P. E. Bl ¨ochl, Projector augmented-wave method, Phys. Rev. B 50, 17953 (1994)

    1994

  69. [69]

    Y . Yuan, W. Li, B. Liu, P. Deng, Z. Xu, X. Chen, C. Song, L. Wang, K. He, G. Xu, and Q.-K. Xue, Edge states at nematic domain walls in FeSe films, Nano Lett.18, 7176 (2018)

    2018

  70. [70]

    Brandbyge, J.-L

    M. Brandbyge, J.-L. Mozos, P. Ordej´on, J. Taylor, and K. Stok- bro, Density-functional method for nonequilibrium electron transport, Phys. Rev. B65, 165401 (2002)

    2002

  71. [71]

    Landauer, Electrical resistance of disordered one- dimensional lattices, Philos

    R. Landauer, Electrical resistance of disordered one- dimensional lattices, Philos. Mag.21, 863 (1970)

    1970

  72. [72]

    Yuasa, T

    S. Yuasa, T. Nagahama, A. Fukushima, Y . Suzuki, and K. Ando, Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions, Nat. Mater.3, 868 (2004)

    2004

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