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Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces

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arxiv 1302.1411 v1 pith:2YLKA6LY submitted 2013-02-06 cond-mat.mes-hall

Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces

A. Annadi , A. Putra , A. Srivastava , X. Wang , Z. Huang , Z.Q. Liu , T. Venkatesan , Ariando This is my paper
classification cond-mat.mes-hall
keywords ndalo3srtio3dependenceelectronevolutionheterointerfaceshoppinglocalized
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We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T -1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers.

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