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Field-Free Deterministic Writing of SOT-MTJ by Unipolar Current
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We propose a manufacturable solution for field-free writing of perpendicular SOT-MTJ without sacrificing integration density on a 200 mm wafer. The field-free writing operation can be achieved by unipolar current pulses via engineering the interlayer exchange coupling in SOT-MTJ thin films. The proposed device can reach a high writing speed of up to 1 ns and work properly at temperature of 100 C. The deterministic writing of SOT-MTJ by unipolar current offers an effective approach for high density SOT-MRAM integration.
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