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Strain effect on electronic transport and ferromagnetic transition temperature in La_(0.9)Sr_(0.1)MnO₃ thin films

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arxiv cond-mat/0203196 v1 pith:4A6KU3LV submitted 2002-03-08 cond-mat.mtrl-sci cond-mat.dis-nncond-mat.str-el

Strain effect on electronic transport and ferromagnetic transition temperature in La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ thin films

classification cond-mat.mtrl-sci cond-mat.dis-nncond-mat.str-el
keywords strainfilmfilmsthicknesseffectferromagneticpolaronicresistivity
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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abstract

We report on a systematic study of strain effects on the transport properties and the ferromagnetic transition temperature $T_{c}$ of high-quality La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ thin films epitaxially grown on (100) SrTiO$_{3}$ substrates. Both the magnetization and the resistivity are critically dependent on the film thickness. $T_{c}$ is enhanced with decreasing the film thickness due to the compressive stain produced by lattice mismatch. The resistivity above 165 K of the films with various thicknesses is consistent with small polaronic hopping conductivity. The polaronic formation energy $E_{P}$ is reduced with the decrease of film thickness. We found that the strain dependence of $T_{c}$ mainly results from the strain-induced electron-phonon coupling. The strain effect on $E_{P}$ is in good agreement with the theoretical predictions.

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