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Strongly enhanced Berry dipole at topological phase transitions in BiTeI
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Transitions between topologically distinct electronic states have been predicted in different classes of materials and observed in some. A major goal is the identification of measurable properties that directly expose the topological nature of such transitions. Here we focus on the giant-Rashba material bismuth tellurium iodine (BiTeI) which exhibits a pressure-driven phase transition between topological and trivial insulators in three-dimensions. We demonstrate that this transition, which proceeds through an intermediate Weyl semi-metallic state, is accompanied by a giant enhancement of the Berry curvature dipole which can be probed in transport and optoelectronic experiments. From first-principles calculations, we show that the Berrry-dipole --a vector along the polar axis of this material-- has opposite orientations in the trivial and topological insulating phases and peaks at the insulator-to-Weyl critical points, at which the nonlinear Hall conductivity can increase by over two orders of magnitude.
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Electric field induced Berry curvature dipole in quasi-one-dimensional Bi$_4$I$_4$
Out-of-plane electric fields substantially enhance the Berry curvature dipole in bilayer α/β-Bi4I4 relative to rigid monolayers, enabling tunable nonlinear Hall response.
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