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Formation of Pt induced Ge atomic nanowires on Pt/Ge(001): a DFT study

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arxiv 0804.1903 v2 pith:4PFGXAUX submitted 2008-04-11 cond-mat.mtrl-sci physics.comp-ph

classification cond-mat.mtrl-sciphysics.comp-ph
keywords nanowiressurfaceatomicformationatomsmixedstructuresannealing
verification ladder T0 review T1 audit T2 compute T3 formal
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Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a mixed Pt-Ge surface after high temperature annealing. We study possible structures of the mixed surface and the nanowires by total energy (density functional theory) calculations. Experimental scanning tunneling microscopy images are compared to the calculated local densities of states. On the basis of this comparison and the stability of the structures, we conclude that the formation of nanowires is driven by an increased concentration of Pt atoms in the Ge surface layers. Surprisingly, the atomic nanowires consist of Ge instead of Pt atoms.

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